Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74505) > Seite 1230 nach 1242
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| AL3353S-13 | DIODES INCORPORATED |
 Category: LED driversDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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74LVC540AT20-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LVC Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 1339 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LDW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN65D8LDWQ-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
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| 74LVCE1G00SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
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74LVCE1G00W5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
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| 74LVCE1G02SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE Operating temperature: -40...150°C Mounting: SMD Kind of package: reel; tape Kind of gate: NOR Technology: CMOS; TTL Family: LVCE Case: SOT353 Number of inputs: 2 Supply voltage: 1.4...5.5V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: totem pole |
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74LVCE1G06W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Family: LVCE |
Produkt ist nicht verfügbar |
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| 74LVCE1G08SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
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74LVCE1G08W5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
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fmmt717 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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SMBJ48A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape Mounting: SMD Case: SMB Kind of package: reel; tape Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Type of diode: TVS Features of semiconductor devices: glass passivated Max. off-state voltage: 48V Peak pulse power dissipation: 0.6kW Leakage current: 5µA Breakdown voltage: 53.3...61.3V |
auf Bestellung 4385 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP22816AKCWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22816AKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22816BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22816BKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22817AKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22817AKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22818AKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22818AKCWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22818AKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22818AKWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22818BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22818BKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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| ZXGD3006E6QTA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DMPH6250SQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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DMPH6250SQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SMAJ16AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| AL5817MP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| PAM8906M1010-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Mounting: SMD Case: MSOP10 Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.1...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8906M1012-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Mounting: SMD Case: MSOP10 Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.1...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8906M1018-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Mounting: SMD Case: MSOP10 Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.1...5.5V DC |
Produkt ist nicht verfügbar |
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| DMT12H007LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.9W Drain-source voltage: 120V Drain current: 72A On-state resistance: 14.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
Produkt ist nicht verfügbar |
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| DMT12H007SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: 320A Drain-source voltage: 120V Drain current: 64A |
Produkt ist nicht verfügbar |
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| DMT12H060LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMT12H065LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMT12H090LFDF4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W Mounting: SMD Drain-source voltage: 115V Drain current: 2.7A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Case: X2-DFN2020-6 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A |
Produkt ist nicht verfügbar |
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BZX84C51-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 51V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 51V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
auf Bestellung 3099 Stücke: Lieferzeit 14-21 Tag (e) |
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| DGD0211CWTQ-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0215WT-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0216WT-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0227S8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0280WT-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0503FN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0504FN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: WDFN3030-10 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C |
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| DGD0506AFN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0506AM10-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0507AFN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD05463FN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD05473FN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD05473FNQ-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| DGD0590AFU-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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DMN10H220L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN10H220L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN10H220LE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN10H220LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 8.8A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMN10H220LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 44A Power dissipation: 2.4W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN10H220LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.7A Pulsed drain current: 30A Power dissipation: 7.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
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| AL3353S-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| 74LVC540AT20-13 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1339 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
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| 274+ | 0.26 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 353+ | 0.2 EUR |
| SMAJ75A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 285+ | 0.25 EUR |
| 365+ | 0.2 EUR |
| DMN65D8LDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN65D8LDWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 74LVCE1G00SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
| 74LVCE1G00W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
| 74LVCE1G02SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS; TTL
Family: LVCE
Case: SOT353
Number of inputs: 2
Supply voltage: 1.4...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: totem pole
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS; TTL
Family: LVCE
Case: SOT353
Number of inputs: 2
Supply voltage: 1.4...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: totem pole
Produkt ist nicht verfügbar
| 74LVCE1G06W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: LVCE
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: LVCE
Produkt ist nicht verfügbar
| 74LVCE1G08SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
| 74LVCE1G08W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
| fmmt717 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SMBJ48A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Type of diode: TVS
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Peak pulse power dissipation: 0.6kW
Leakage current: 5µA
Breakdown voltage: 53.3...61.3V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Type of diode: TVS
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Peak pulse power dissipation: 0.6kW
Leakage current: 5µA
Breakdown voltage: 53.3...61.3V
auf Bestellung 4385 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 0.25 EUR |
| 500+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 635+ | 0.11 EUR |
| AP22816AKCWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22816AKEWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22816BKBWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22816BKEWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22817AKBWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22817AKEWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22818AKBWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22818AKCWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22818AKEWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22818AKWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22818BKBWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22818BKEWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| ZXGD3006E6QTA |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DMPH6250SQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMPH6250SQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SMAJ16AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
| AL5817MP-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| PAM8906M1010-13 |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: MSOP10
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: MSOP10
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Produkt ist nicht verfügbar
| PAM8906M1012-13 |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: MSOP10
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: MSOP10
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Produkt ist nicht verfügbar
| PAM8906M1018-13 |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: MSOP10
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: MSOP10
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Produkt ist nicht verfügbar
| DMT12H007LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.9W
Drain-source voltage: 120V
Drain current: 72A
On-state resistance: 14.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.9W
Drain-source voltage: 120V
Drain current: 72A
On-state resistance: 14.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
| DMT12H007SPS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
Produkt ist nicht verfügbar
| DMT12H060LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMT12H065LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMT12H090LFDF4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W
Mounting: SMD
Drain-source voltage: 115V
Drain current: 2.7A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Case: X2-DFN2020-6
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W
Mounting: SMD
Drain-source voltage: 115V
Drain current: 2.7A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Case: X2-DFN2020-6
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Produkt ist nicht verfügbar
| BZX84C51-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 51V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 51V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 51V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 51V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 3099 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1300+ | 0.056 EUR |
| 2040+ | 0.035 EUR |
| 2300+ | 0.031 EUR |
| 2720+ | 0.026 EUR |
| 2880+ | 0.025 EUR |
| DGD0211CWTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0215WT-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0216WT-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0227S8-13 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0280WT-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0503FN-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0504FN-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| DGD0506AFN-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0506AM10-13 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0507AFN-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD05463FN-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD05473FN-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD05473FNQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DGD0590AFU-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DMN10H220L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN10H220L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 160+ | 0.44 EUR |
| DMN10H220LE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN10H220LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN10H220LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN10H220LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 207+ | 0.35 EUR |
| 262+ | 0.27 EUR |
| 296+ | 0.24 EUR |
| 350+ | 0.2 EUR |
| 370+ | 0.19 EUR |
| DMN10H220LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 515+ | 0.14 EUR |
| 575+ | 0.12 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |