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DXTP5820CFDB-7 DIODES INCORPORATED DXTP5820CFDB.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
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DXTN58100CFDB-7 DIODES INCORPORATED DXTN58100CFDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 6A
Mounting: SMD
Frequency: 150MHz
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DMN2053UFDB-7 DIODES INCORPORATED DMN2053UFDB.pdf Category: Transistors - Unclassified
Description: DMN2053UFDB-7
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DMP2090UFDB-7 DIODES INCORPORATED Category: Transistors - Unclassified
Description: DMP2090UFDB-7
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DMP2165UW-7 DMP2165UW-7 DIODES INCORPORATED DMP2165UW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 3.5nC
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DMN3016LFDE-7 DIODES INCORPORATED DMN3016LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
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2N7002T-7-F 2N7002T-7-F DIODES INCORPORATED 2N7002T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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2N7002TQ-7-F DIODES INCORPORATED 2N7002TQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ZXTP08400BFFTA ZXTP08400BFFTA DIODES INCORPORATED ZXTP08400BFF.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
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ZTX696BSTZ ZTX696BSTZ DIODES INCORPORATED ZTX696B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
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BAS40BRW-7-F BAS40BRW-7-F DIODES INCORPORATED BAS40TW_DW-04_DW-05_DW-06_BRW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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FZT705TC FZT705TC DIODES INCORPORATED FZT705.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
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FZT705TA FZT705TA DIODES INCORPORATED FZT705.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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FZT7053TA FZT7053TA DIODES INCORPORATED FZT7053.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
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FZT705QTA FZT705QTA DIODES INCORPORATED FZT705Q.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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D5V0L2B3SO-7 D5V0L2B3SO-7 DIODES INCORPORATED D5V0L2B3SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Capacitance: 20pF
Number of channels: 2
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SMBJ10CA-13-F SMBJ10CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ100CA-13-F SMBJ100CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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B160AE-13 B160AE-13 DIODES INCORPORATED B150%28A%2CB%29E%2C%20B160%28A%2CB%29E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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B160AF-13 DIODES INCORPORATED B150AF-B160AF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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B160B-13-F B160B-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
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B160S1F-7 B160S1F-7 DIODES INCORPORATED B160S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
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74LVC32AS14-13 74LVC32AS14-13 DIODES INCORPORATED 74LVC32A.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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FMMT417TD FMMT417TD DIODES INCORPORATED FMMT415.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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FMMT415TD FMMT415TD DIODES INCORPORATED FMMT415.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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AP22615BWU-7 DIODES INCORPORATED AP22815_615.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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BZX84C6V2-7-F BZX84C6V2-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C6V2TS-7-F BZX84C6V2TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C6V2Q-7-F BZX84C6V2Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C6V2S-7-F BZX84C6V2S-7-F DIODES INCORPORATED BZX84CxxS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
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BZX84C6V2W-7-F BZX84C6V2W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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SDM2U40CSP-7B DIODES INCORPORATED SDM2U40CSP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
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DFLS230LH-7 DFLS230LH-7 DIODES INCORPORATED DFLS230LH.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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SDT10A100CTFP SDT10A100CTFP DIODES INCORPORATED SDT10A100CT-SDT10A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Leakage current: 50µA
Type of diode: Schottky rectifying
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SDT10A100CT SDT10A100CT DIODES INCORPORATED SDT10A100CT-SDT10A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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PAM8904EJPR DIODES INCORPORATED PAM8904E.pdf Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
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ZTX853 ZTX853 DIODES INCORPORATED ZTX853.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Manufacturer standard package: 4000pcs.
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ZTX853STZ ZTX853STZ DIODES INCORPORATED ZTX853.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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1SMB5943B-13 1SMB5943B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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LM2902AQS14-13 LM2902AQS14-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 1mV
Open-loop gain: 100dB
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LM2902AQT14-13 LM2902AQT14-13 DIODES INCORPORATED LM2902Q-04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 4mV
Input bias current: 0.5µA
Input offset current: 150nA
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LM2902AS14-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 4mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902AT14-13 LM2902AT14-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902QS14-13 DIODES INCORPORATED LM2902Q-04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902QT14-13 LM2902QT14-13 DIODES INCORPORATED LM2902Q-04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902S14-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902T14-13 LM2902T14-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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DMT35M4LFDF-7 DIODES INCORPORATED DMT35M4LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSS60601MZ4-13 DSS60601MZ4-13 DIODES INCORPORATED DSS60601MZ4.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 60V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 12A
Type of transistor: NPN
Current gain: 50...360
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector current: 6A
Produkt ist nicht verfügbar
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MMBD2004SW-7-F MMBD2004SW-7-F DIODES INCORPORATED ds30443.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT323; Ufmax: 1V
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 300V
Load current: 0.225A
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT323
Type of diode: switching
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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AP22916BCA4-7 DIODES INCORPORATED AP22916.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; X1-WLB0808-4
Mounting: SMD
Supply voltage: 1.3...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: X1-WLB0808-4
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP22916CCA4-7 DIODES INCORPORATED AP22916.pdf Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape
On-state resistance: 60mΩ
Mounting: SMD
Supply voltage: 1.3...3.5V DC
Active logical level: high
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-WLB0808-4
Kind of integrated circuit: load switch
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BC857BTQ-7 BC857BTQ-7 DIODES INCORPORATED BC857BTQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ14AQ-13-F SMCJ14AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 64.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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3.0SMCJ14A-13 3.0SMCJ14A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 15.6÷17.2V; 129.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 129.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMCJ130A-13-F SMCJ130A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 144÷159V; 7.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ130CA-13-F SMCJ130CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 144÷159V; 7.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 7.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP3441LSHE-7B AP3441LSHE-7B DIODES INCORPORATED AP3441-L.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
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AP3401KTTR-G1 AP3401KTTR-G1 DIODES INCORPORATED AP3401x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT26
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
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AP3441SHE-7B DIODES INCORPORATED AP3441-L.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DXTP5820CFDB-7 DXTP5820CFDB.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
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DXTN58100CFDB-7 DXTN58100CFDB.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 6A
Mounting: SMD
Frequency: 150MHz
Produkt ist nicht verfügbar
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DMN2053UFDB-7 DMN2053UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DMN2053UFDB-7
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DMP2090UFDB-7
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DMP2090UFDB-7
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Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 3000 Stücke
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DMP2165UW-7 DMP2165UW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 3.5nC
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DMN3016LFDE-7 DMN3016LFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
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2N7002T-7-F 2N7002T.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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2N7002TQ-7-F 2N7002TQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ZXTP08400BFFTA ZXTP08400BFF.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
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ZTX696BSTZ ZTX696B.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
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BAS40BRW-7-F BAS40TW_DW-04_DW-05_DW-06_BRW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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FZT705TC FZT705.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
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FZT705TA FZT705.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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FZT7053TA FZT7053.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
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FZT705QTA FZT705Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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D5V0L2B3SO-7 D5V0L2B3SO.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Capacitance: 20pF
Number of channels: 2
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SMBJ10CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ100CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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B160AE-13 B150%28A%2CB%29E%2C%20B160%28A%2CB%29E.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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B160AF-13 B150AF-B160AF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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B160B-13-F b120-160b.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
auf Bestellung 5525 Stücke:
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B160S1F-7 B160S1F.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
auf Bestellung 1900 Stücke:
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74LVC32AS14-13 74LVC32A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
auf Bestellung 2169 Stücke:
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FMMT417TD FMMT415.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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FMMT415TD FMMT415.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Produkt ist nicht verfügbar
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AP22615BWU-7 AP22815_615.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
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BZX84C6V2-7-F BZX84Cxx_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 5827 Stücke:
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BZX84C6V2TS-7-F BZX84CxxTS_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C6V2Q-7-F BZX84Cxx_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C6V2S-7-F BZX84CxxS_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C6V2W-7-F BZX84CxxW_SER.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SDM2U40CSP-7B SDM2U40CSP.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DFLS230LH-7 DFLS230LH.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SDT10A100CTFP SDT10A100CT-SDT10A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Leakage current: 50µA
Type of diode: Schottky rectifying
auf Bestellung 200 Stücke:
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SDT10A100CT SDT10A100CT-SDT10A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
auf Bestellung 49 Stücke:
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PAM8904EJPR PAM8904E.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
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ZTX853 ZTX853.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Manufacturer standard package: 4000pcs.
auf Bestellung 3391 Stücke:
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ZTX853STZ ZTX853.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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1SMB5943B-13 1SMB59xxB_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LM2902AQS14-13 LM2902Q_04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 1mV
Open-loop gain: 100dB
Produkt ist nicht verfügbar
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LM2902AQT14-13 LM2902Q-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 4mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902AS14-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 4mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902AT14-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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LM2902QS14-13 LM2902Q-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902QT14-13 LM2902Q-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902S14-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM2902T14-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input offset voltage: 10mV
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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DMT35M4LFDF-7 DMT35M4LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSS60601MZ4-13 DSS60601MZ4.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 60V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 12A
Type of transistor: NPN
Current gain: 50...360
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector current: 6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MMBD2004SW-7-F ds30443.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT323; Ufmax: 1V
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 300V
Load current: 0.225A
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT323
Type of diode: switching
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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AP22916BCA4-7 AP22916.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; X1-WLB0808-4
Mounting: SMD
Supply voltage: 1.3...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: X1-WLB0808-4
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP22916CCA4-7 AP22916.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape
On-state resistance: 60mΩ
Mounting: SMD
Supply voltage: 1.3...3.5V DC
Active logical level: high
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-WLB0808-4
Kind of integrated circuit: load switch
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BC857BTQ-7 BC857BTQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ14AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 64.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ14A-13 3.0SMCJxx.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 15.6÷17.2V; 129.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 129.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMCJ130A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 144÷159V; 7.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 267 Stücke:
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SMCJ130CA-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 144÷159V; 7.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 7.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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AP3441LSHE-7B AP3441-L.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
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AP3401KTTR-G1 AP3401x-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT26
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
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AP3441SHE-7B AP3441-L.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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