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GBU802 GBU802 DIODES INCORPORATED gbu8005-gbu810.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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SMBJ85A-13-F SMBJ85A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZXMP6A17GTA ZXMP6A17GTA DIODES INCORPORATED ZXMP6A17G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Pulsed drain current: -13.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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172+0.5 EUR
500+0.42 EUR
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DMT6016LPS-13 DIODES INCORPORATED DMT6016LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DDZ6V8C-7 DDZ6V8C-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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DDZ6V8CS-7 DDZ6V8CS-7 DIODES INCORPORATED ds30414.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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DDZ6V8CSF-7 DDZ6V8CSF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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DDZX6V8C-7 DDZX6V8C-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BCX41QTA BCX41QTA DIODES INCORPORATED BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BCX41TA BCX41TA DIODES INCORPORATED BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Current gain: 25...63
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
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DZ23C4V7-7-F DZ23C4V7-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; double,common cathode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double
Kind of package: reel; tape
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BZX84C4V7Q-7-F BZX84C4V7Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C4V7-13-F BZX84C4V7-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84B4V7Q-7-F BZX84B4V7Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C4V7Q-13-F BZX84C4V7Q-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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DDTC144EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 68
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DDTC144WE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Frequency: 250MHz
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DDTC144WUA-7-F DDTC144WUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Frequency: 250MHz
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DDTC144EUA-7-F DDTC144EUA-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 68
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DDTC144EUAQ-13-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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DDTC144EUAQ-7-F DDTC144EUAQ-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80
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DDTC144ECAQ-13-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 200mW; SC59; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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2N7002Q-7-F 2N7002Q-7-F DIODES INCORPORATED 2N7002.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.105A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.105A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Application: automotive industry
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AP431IBNTR-G1 AP431IBNTR-G1 DIODES INCORPORATED AP431i.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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AP431IANTR-G1 AP431IANTR-G1 DIODES INCORPORATED AP431i.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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AZ75232GSTR-G1 DIODES INCORPORATED AZ75232.pdf Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; 120kbps; SSOP20
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Data transfer rate: 120kbps
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
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AZ75232GTR-G1 AZ75232GTR-G1 DIODES INCORPORATED AZ75232.pdf Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; 120kbps; TSSOP20
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Data transfer rate: 120kbps
Mounting: SMD
Case: TSSOP20
Number of receivers: 5
Operating temperature: -40...85°C
DC supply current: 30mA
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ZXMP6A18DN8TA ZXMP6A18DN8TA DIODES INCORPORATED ZXMP6A18DN8.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMP6A18DN8QTC ZXMP6A18DN8QTC DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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DCX114YUQ-13R-F DCX114YUQ-13R-F DIODES INCORPORATED DCX_XXXX_U.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; 50V; 200mW; SOT363
Type of transistor: NPN / PNP
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
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DDZ22ASF-7 DDZ22ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD323F; single diode; reel,tape
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 22V
Type of diode: Zener
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DFLR1600Q-7 DFLR1600Q-7 DIODES INCORPORATED ds30602.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; PowerDI®123; Ufmax: 1.1V
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 25A
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 0.03A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: PowerDI®123
Type of diode: rectifying
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RS1D-13-F RS1D-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS1DB-13-F RS1DB-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
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DESD3V3E1BL-7B DESD3V3E1BL-7B DIODES INCORPORATED DESD3V3E1BL.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
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1323+0.064 EUR
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DESD3V3S1BL-7B DIODES INCORPORATED DESD3V3S1BL.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35W; 3.8÷6.5V; 5A; bidirectional; X1-DFN1006-2; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8...6.5V
Semiconductor structure: bidirectional
Case: X1-DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Max. forward impulse current: 5A
Peak pulse power dissipation: 35W
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ZXTP01500BGTC DIODES INCORPORATED ZXTP01500BG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 150mA; 3W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 3W
Case: SOT223-3
Mounting: SMD
Frequency: 60MHz
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DDZ21-7 DDZ21-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 21V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 21V
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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DMP6180SK3Q-13 DMP6180SK3Q-13 DIODES INCORPORATED DMP6180SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -25A; 1W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 17.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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74LVC2G86HD4-7 DIODES INCORPORATED 74LVC2G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: XOR
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: X2-DFN2010-8
Family: LVC
Number of channels: 2
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74LVC2G86HK3-7 DIODES INCORPORATED 74LVC2G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: XOR
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: X2-DFN1410-8
Family: LVC
Number of channels: 2
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DESDA5V3LQ-7 DESDA5V3LQ-7 DIODES INCORPORATED DESDA5V3LQ.pdf Category: Protection diodes - arrays
Description: 5.3V; 20A; SOT23; Ch: 2; -55÷150°C
Breakdown voltage: 5.3V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Max. forward impulse current: 20A
Operating temperature: -55...150°C
Application: automotive industry
Capacitance: 220pF
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BSS84-7-FBSS84-7-F
BSS84-7-FBSS84-7-F
 BSS84-7-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -1.2A; 0.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -1.2A
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BSS84DWQ-7 BSS84DWQ-7 DIODES INCORPORATED bss84dw.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BSS84W-7-F BSS84W-7-F DIODES INCORPORATED BSS84W.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BSS84Q-7-F BSS84Q-7-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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360+0.24 EUR
463+0.18 EUR
560+0.15 EUR
663+0.13 EUR
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1000+0.088 EUR
1500+0.083 EUR
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BSS8402DW-7-F BSS8402DW-7-F DIODES INCORPORATED BSS8402DW-7-F.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-50V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10/13.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
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BSS84DW-7-F BSS84DW-7-F DIODES INCORPORATED bss84dw.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BSS84V-7 BSS84V-7 DIODES INCORPORATED ds30605.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; 150mW; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BSS84-13-F DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
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BSS8402DWQ-7 BSS8402DWQ-7 DIODES INCORPORATED ds30380.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 200mW; SC88,SOT363
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SC88; SOT363
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
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BSS84DWQ-13 BSS84DWQ-13 DIODES INCORPORATED BSS84DWQ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BSS84Q-13-F BSS84Q-13-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXTC4591AMCTA DIODES INCORPORATED ZXTC4591AMC.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMT4011LFG-13 DIODES INCORPORATED DMT4011LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
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DMT4008LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 1.9W
Gate charge: 17.1nC
Polarisation: unipolar
Drain current: 9.7A
Produkt ist nicht verfügbar
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DMT4011LFG-7 DIODES INCORPORATED DMT4011LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
Produkt ist nicht verfügbar
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SDM03MT40A-7-F SDM03MT40A-7-F DIODES INCORPORATED SDM03MT40A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
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SDM03MT40-7-F SDM03MT40-7-F DIODES INCORPORATED SDM03MT40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
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DMT4008LFDF-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6
Case: U-DFN2020-6
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Power dissipation: 0.8W
Gate charge: 17.1nC
Drain current: 11.8A
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3000+0.44 EUR
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GBU802 gbu8005-gbu810.pdf
GBU802
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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SMBJ85A-13-F SMBJ_ser.pdf
SMBJ85A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AnzahlPrivatkunde
10+8.51 EUR
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ZXMP6A17GTA ZXMP6A17G.pdf
ZXMP6A17GTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Pulsed drain current: -13.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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66+1.3 EUR
136+0.63 EUR
160+0.54 EUR
172+0.5 EUR
500+0.42 EUR
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DMT6016LPS-13 DMT6016LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DDZ6V8C-7 DDZ5V1B-DDZ43.pdf
DDZ6V8C-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DDZ6V8CS-7 ds30414.pdf
DDZ6V8CS-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DDZ6V8CSF-7 ds31987.pdf
DDZ6V8CSF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DDZX6V8C-7 ds30408.pdf
DDZX6V8C-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BCX41QTA BCX41.pdf
BCX41QTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Pulsed collector current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
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BCX41TA BCX41.pdf
BCX41TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Current gain: 25...63
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
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DZ23C4V7-7-F DZ23C2V7-DZ23C51.pdf
DZ23C4V7-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; double,common cathode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double
Kind of package: reel; tape
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BZX84C4V7Q-7-F BZX84Cxx_SER.pdf
BZX84C4V7Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C4V7-13-F BZX84Cxx_SER.pdf
BZX84C4V7-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84B4V7Q-7-F BZX84Bxxx.pdf
BZX84B4V7Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C4V7Q-13-F BZX84Cxx_SER.pdf
BZX84C4V7Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DDTC144EE-7-F ds30313.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 68
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DDTC144WE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDTC144WUA-7-F ds30322.pdf
DDTC144WUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDTC144EUA-7-F ds30321.pdf
DDTC144EUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 68
Produkt ist nicht verfügbar
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DDTC144EUAQ-13-F ds30321.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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DDTC144EUAQ-7-F ds30321.pdf
DDTC144EUAQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80
Produkt ist nicht verfügbar
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DDTC144ECAQ-13-F ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 200mW; SC59; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
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10000+0.051 EUR
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2N7002Q-7-F 2N7002.pdf
2N7002Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.105A; Idm: 0.8A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.105A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Application: automotive industry
auf Bestellung 5775 Stücke:
Lieferzeit 14-21 Tag (e)
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200+0.43 EUR
3000+0.077 EUR
Mindestbestellmenge: 200 Stücke
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AP431IBNTR-G1 AP431i.pdf
AP431IBNTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP431IANTR-G1 AP431i.pdf
AP431IANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AZ75232GSTR-G1 AZ75232.pdf
Hersteller: DIODES INCORPORATED
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; 120kbps; SSOP20
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Data transfer rate: 120kbps
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
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Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+0.21 EUR
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AZ75232GTR-G1 AZ75232.pdf
AZ75232GTR-G1
Hersteller: DIODES INCORPORATED
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; 120kbps; TSSOP20
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Data transfer rate: 120kbps
Mounting: SMD
Case: TSSOP20
Number of receivers: 5
Operating temperature: -40...85°C
DC supply current: 30mA
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.21 EUR
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ZXMP6A18DN8TA ZXMP6A18DN8.pdf
ZXMP6A18DN8TA
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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5+17.02 EUR
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ZXMP6A18DN8QTC
ZXMP6A18DN8QTC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DCX114YUQ-13R-F DCX_XXXX_U.pdf
DCX114YUQ-13R-F
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; 50V; 200mW; SOT363
Type of transistor: NPN / PNP
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
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Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10000+0.08 EUR
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DDZ22ASF-7 ds31987.pdf
DDZ22ASF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD323F; single diode; reel,tape
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 22V
Type of diode: Zener
Produkt ist nicht verfügbar
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DFLR1600Q-7 ds30602.pdf
DFLR1600Q-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; PowerDI®123; Ufmax: 1.1V
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 25A
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 0.03A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: PowerDI®123
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RS1D-13-F ds15002.pdf
RS1D-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RS1DB-13-F ds15002.pdf
RS1DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DESD3V3E1BL-7B DESD3V3E1BL.pdf
DESD3V3E1BL-7B
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
auf Bestellung 9400 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
544+0.15 EUR
736+0.12 EUR
1323+0.064 EUR
1401+0.061 EUR
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DESD3V3S1BL-7B DESD3V3S1BL.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35W; 3.8÷6.5V; 5A; bidirectional; X1-DFN1006-2; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8...6.5V
Semiconductor structure: bidirectional
Case: X1-DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Max. forward impulse current: 5A
Peak pulse power dissipation: 35W
Produkt ist nicht verfügbar
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ZXTP01500BGTC ZXTP01500BG.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 500V; 150mA; 3W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 3W
Case: SOT223-3
Mounting: SMD
Frequency: 60MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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DDZ21-7 DDZ5V1B-DDZ43.pdf
DDZ21-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 21V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 21V
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMP6180SK3Q-13 DMP6180SK3Q.pdf
DMP6180SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -25A; 1W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 17.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74LVC2G86HD4-7 74LVC2G86.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: XOR
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: X2-DFN2010-8
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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74LVC2G86HK3-7 74LVC2G86.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: XOR
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: X2-DFN1410-8
Family: LVC
Number of channels: 2
Produkt ist nicht verfügbar
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DESDA5V3LQ-7 DESDA5V3LQ.pdf
DESDA5V3LQ-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: 5.3V; 20A; SOT23; Ch: 2; -55÷150°C
Breakdown voltage: 5.3V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Max. forward impulse current: 20A
Operating temperature: -55...150°C
Application: automotive industry
Capacitance: 220pF
auf Bestellung 420000 Stücke:
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AnzahlPrivatkunde
3000+0.1 EUR
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BSS84-7-F BSS84.pdf
BSS84-7-FBSS84-7-F
BSS84-7-FBSS84-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -1.2A; 0.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -1.2A
auf Bestellung 14827 Stücke:
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625+0.13 EUR
2305+0.037 EUR
2370+0.036 EUR
3000+0.035 EUR
9000+0.032 EUR
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BSS84DWQ-7 bss84dw.pdf
BSS84DWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
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5+17.02 EUR
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BSS84W-7-F BSS84W.pdf
BSS84W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS84Q-7-F BSS84.pdf
BSS84Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3002 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
360+0.24 EUR
463+0.18 EUR
560+0.15 EUR
663+0.13 EUR
878+0.098 EUR
1000+0.088 EUR
1500+0.083 EUR
3000+0.079 EUR
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BSS8402DW-7-F BSS8402DW-7-F.pdf
BSS8402DW-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-50V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10/13.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
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1+85.08 EUR
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BSS84DW-7-F bss84dw.pdf
BSS84DW-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS84V-7 ds30605.pdf
BSS84V-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; 150mW; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS84-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BSS8402DWQ-7 ds30380.pdf
BSS8402DWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 200mW; SC88,SOT363
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.2W
Case: SC88; SOT363
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BSS84DWQ-13 BSS84DWQ.pdf
BSS84DWQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS84Q-13-F BSS84.pdf
BSS84Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ZXTC4591AMCTA ZXTC4591AMC.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMT4011LFG-13 DMT4011LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
Produkt ist nicht verfügbar
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DMT4008LFV-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 1.9W
Gate charge: 17.1nC
Polarisation: unipolar
Drain current: 9.7A
Produkt ist nicht verfügbar
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DMT4011LFG-7 DMT4011LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
Produkt ist nicht verfügbar
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SDM03MT40A-7-F SDM03MT40A.pdf
SDM03MT40A-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SDM03MT40-7-F SDM03MT40.pdf
SDM03MT40-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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DMT4008LFDF-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6
Case: U-DFN2020-6
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Power dissipation: 0.8W
Gate charge: 17.1nC
Drain current: 11.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.44 EUR
Mindestbestellmenge: 3000 Stücke
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