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DESDA5V3LQ-7 DESDA5V3LQ-7 DIODES INCORPORATED DESDA5V3LQ.pdf Category: Protection diodes - arrays
Description: 5.3V; 20A; SOT23; Ch: 2; -55÷150°C
Breakdown voltage: 5.3V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Application: automotive industry
Max. forward impulse current: 20A
Operating temperature: -55...150°C
Capacitance: 220pF
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3000+0.1 EUR
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BSS84-7-FBSS84-7-F
BSS84-7-FBSS84-7-F
 BSS84-7-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -1.2A; 0.3W
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Pulsed drain current: -1.2A
Polarisation: unipolar
Kind of package: 7 inch reel; tape
auf Bestellung 1865 Stücke:
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715+0.12 EUR
1017+0.083 EUR
1217+0.07 EUR
1859+0.045 EUR
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BSS84DWQ-7 BSS84DWQ-7 DIODES INCORPORATED bss84dw.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Application: automotive industry
Kind of package: 7 inch reel; tape
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BSS84W-7-F BSS84W-7-F DIODES INCORPORATED BSS84W.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT323
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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BSS84Q-7-F BSS84Q-7-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of package: 7 inch reel; tape
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BSS8402DW-7-F BSS8402DW-7-F DIODES INCORPORATED BSS8402DW-7-F.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-50V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
Power dissipation: 0.2W
Gate-source voltage: ±20V
On-state resistance: 10/13.5Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of package: 7 inch reel; tape
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BSS84DW-7-F BSS84DW-7-F DIODES INCORPORATED bss84dw.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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BSS84V-7 BSS84V-7 DIODES INCORPORATED ds30605.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; 150mW; SOT563
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.15W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT563
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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BSS84-13-F DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
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BSS8402DWQ-7 BSS8402DWQ-7 DIODES INCORPORATED ds30380.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 200mW; SC88,SOT363
Type of transistor: N/P-MOSFET
Power dissipation: 0.2W
Mounting: SMD
Kind of channel: enhancement
Case: SC88; SOT363
Polarisation: unipolar
Application: automotive industry
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BSS84DWQ-13 BSS84DWQ-13 DIODES INCORPORATED BSS84DWQ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Application: automotive industry
Kind of package: 13 inch reel; tape
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BSS84Q-13-F BSS84Q-13-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of package: 13 inch reel; tape
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ZXTC4591AMCTA DIODES INCORPORATED ZXTC4591AMC.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
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DMT4011LFG-13 DIODES INCORPORATED DMT4011LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
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DMT4008LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 1.9W
Gate charge: 17.1nC
Polarisation: unipolar
Drain current: 9.7A
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DMT4011LFG-7 DIODES INCORPORATED DMT4011LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
Produkt ist nicht verfügbar
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SDM03MT40A-7-F SDM03MT40A-7-F DIODES INCORPORATED SDM03MT40A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SDM03MT40-7-F SDM03MT40-7-F DIODES INCORPORATED SDM03MT40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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DMT4008LFDF-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6
Case: U-DFN2020-6
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Power dissipation: 0.8W
Gate charge: 17.1nC
Drain current: 11.8A
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3000+0.44 EUR
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DESDA5V3LQ-7 DESDA5V3LQ.pdf
DESDA5V3LQ-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: 5.3V; 20A; SOT23; Ch: 2; -55÷150°C
Breakdown voltage: 5.3V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Application: automotive industry
Max. forward impulse current: 20A
Operating temperature: -55...150°C
Capacitance: 220pF
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3000+0.1 EUR
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BSS84-7-F BSS84.pdf
BSS84-7-FBSS84-7-F
BSS84-7-FBSS84-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; Idm: -1.2A; 0.3W
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Pulsed drain current: -1.2A
Polarisation: unipolar
Kind of package: 7 inch reel; tape
auf Bestellung 1865 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
715+0.12 EUR
1017+0.083 EUR
1217+0.07 EUR
1859+0.045 EUR
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BSS84DWQ-7 bss84dw.pdf
BSS84DWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Application: automotive industry
Kind of package: 7 inch reel; tape
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BSS84W-7-F BSS84W.pdf
BSS84W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT323
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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BSS84Q-7-F BSS84.pdf
BSS84Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of package: 7 inch reel; tape
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BSS8402DW-7-F BSS8402DW-7-F.pdf
BSS8402DW-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-50V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
Power dissipation: 0.2W
Gate-source voltage: ±20V
On-state resistance: 10/13.5Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of package: 7 inch reel; tape
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BSS84DW-7-F bss84dw.pdf
BSS84DW-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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BSS84V-7 ds30605.pdf
BSS84V-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; 150mW; SOT563
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.15W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT563
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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BSS84-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSS8402DWQ-7 ds30380.pdf
BSS8402DWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 200mW; SC88,SOT363
Type of transistor: N/P-MOSFET
Power dissipation: 0.2W
Mounting: SMD
Kind of channel: enhancement
Case: SC88; SOT363
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
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BSS84DWQ-13 BSS84DWQ.pdf
BSS84DWQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
Type of transistor: P-MOSFET x2
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Application: automotive industry
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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BSS84Q-13-F BSS84.pdf
BSS84Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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ZXTC4591AMCTA ZXTC4591AMC.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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DMT4011LFG-13 DMT4011LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
Produkt ist nicht verfügbar
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DMT4008LFV-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 1.9W
Gate charge: 17.1nC
Polarisation: unipolar
Drain current: 9.7A
Produkt ist nicht verfügbar
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DMT4011LFG-7 DMT4011LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
On-state resistance: 17.8mΩ
Mounting: SMD
Pulsed drain current: 65A
Power dissipation: 2W
Gate charge: 15.1nC
Polarisation: unipolar
Drain current: 8.6A
Produkt ist nicht verfügbar
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SDM03MT40A-7-F SDM03MT40A.pdf
SDM03MT40A-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SDM03MT40-7-F SDM03MT40.pdf
SDM03MT40-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 40V; 30mA; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Capacitance: 2pF
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.225W
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DMT4008LFDF-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6
Case: U-DFN2020-6
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Power dissipation: 0.8W
Gate charge: 17.1nC
Drain current: 11.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.44 EUR
Mindestbestellmenge: 3000 Stücke
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