Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74704) > Seite 1231 nach 1246
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| DMC2990UDJ-7 | DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of package: reel; tape Drain-source voltage: 20/-20V Drain current: 0.35/-0.24A On-state resistance: 0.99/1.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 |
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| DMC2990UDJQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Mounting: SMD |
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| DMN2990UDJ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.3A; 0.35W; SOT963 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.3A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 |
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| DMN2990UFA-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.33A; 0.4W; X2-DFN0806-3 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.33A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: X2-DFN0806-3 |
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| DMN2990UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 620mA On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 920mW Polarisation: unipolar Gate charge: 410pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Mounting: SMD Case: X1-DFN1006-3 |
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| AP7343DQ-12W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.46V Output voltage: 1.2V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q |
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| AP7343DQ-18W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.8V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q |
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| AP7343DQ-28W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 2.8V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q |
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| AP7343DQ-33W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 3.3V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q |
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| AP7343Q-09W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.51V Output voltage: 0.9V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q |
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| AP7343Q-18W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.8V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q |
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| AP7370-50WR-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT25; SMD; 1÷2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 5V Output current: 0.5A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1...2% Number of channels: 1 Input voltage: 3.2...18V Manufacturer series: AP7370 |
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| AP7370-50WW-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT25; SMD; 1÷2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 5V Output current: 0.5A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1...2% Number of channels: 1 Input voltage: 3.2...18V Manufacturer series: AP7370 |
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| AP64060QWU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A Operating temperature: -40...125°C Kind of package: reel; tape Frequency: 2.2MHz Output voltage: 0.8...26V DC Output current: 0.6A Type of integrated circuit: PMIC Application: automotive industry Input voltage: 4.5...40V DC Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: TSOT26 |
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| AP64060WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A Operating temperature: -40...125°C Kind of package: reel; tape Frequency: 2.2MHz Output voltage: 0.8...26V DC Output current: 0.6A Type of integrated circuit: PMIC Input voltage: 4.5...40V DC Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: TSOT26 |
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| ZXTR2105FFQ-7 | DIODES INCORPORATED |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.089A; SOT23F; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.089A Case: SOT23F Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Tolerance: ±5% Number of channels: 1 Application: automotive industry Input voltage: 7...60V |
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SMAJ60CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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AP3417CKTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.4V DC Output current: 1A Case: SOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 94% |
auf Bestellung 993 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXSC310E5TA | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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| DMT10H009LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 9.9A On-state resistance: 12.9mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 20.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: SMD Case: V-DFN3333-8 |
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| DMT10H009LH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 Mounting: THT Case: TO251 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 67A Power dissipation: 61W Polarisation: unipolar Kind of package: tube Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 336A |
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| DMT10H009LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 73A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
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| DMT10H009LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 8A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
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DMT10H009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 13.8mΩ Drain current: 10A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A |
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| DMT10H009SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 9.1mΩ Drain current: 75A Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
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DMT10H010LCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB Mounting: THT Case: TO220AB Type of transistor: N-MOSFET On-state resistance: 6.9mΩ Drain current: 62A Power dissipation: 139W Polarisation: unipolar Kind of package: tube Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 92A |
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DMT10H010LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Pulsed drain current: 275A Power dissipation: 3W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced |
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DMT10H010LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 14.5mΩ Drain current: 9.2A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A |
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| DMT10H010SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 11.5mΩ Drain current: 8.6A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A |
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DMT10H014LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 7.1A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A |
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| DMT10H015LCG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A |
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| DMT10H015LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A |
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| DMT10H015LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 42.1A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 210A |
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| DMT10H015LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 8A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
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DMT10H015LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 6.7A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A |
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DMT10H015SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 11.1mΩ Drain current: 43A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 215A |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT10H015SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 19.5mΩ Drain current: 6.1A Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A |
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| DMT10H017LPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 30.3mΩ Drain current: 43.7A Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28.6nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
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| DMT10H025LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 43.7mΩ Drain current: 37.7A Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 185A |
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DMT10H025LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 5.7A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
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| DMT10H025SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 32.9A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A |
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DMT10H025SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A |
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| DMT10H032LDV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 15A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A |
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| DMT10H032LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 13A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 68A |
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| DMT10H072LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A |
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| DMT10H072LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A |
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| DMT10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 6.2mΩ Drain current: 15A Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
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SMCJ16CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 57.7A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| ZXLD1322DCCTC | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| DMN3027LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W Mounting: SMD Case: PowerDI3333-8 Power dissipation: 3W Kind of package: reel; tape Pulsed drain current: 70A Gate charge: 11.3nC Polarisation: unipolar Drain current: 7.7A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±25V On-state resistance: 26.5mΩ |
Produkt ist nicht verfügbar |
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| DMN3027LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W Mounting: SMD Case: PowerDI3333-8 Power dissipation: 3W Kind of package: reel; tape Pulsed drain current: 70A Gate charge: 11.3nC Polarisation: unipolar Drain current: 7.7A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±25V On-state resistance: 26.5mΩ |
Produkt ist nicht verfügbar |
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| DMC4050SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AP62201WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; 84% Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.2...18V DC Output voltage: 0.8...7V DC Output current: 2A Case: TSOT26 Mounting: SMD Frequency: 750kHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 84% |
Produkt ist nicht verfügbar |
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| DXTN07100BFG-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
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AL8863SP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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| AL8853S-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AP61200Z6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A Operating temperature: -40...125°C Kind of package: reel; tape Input voltage: 2.3...5.5V DC Efficiency: 89% Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: SOT563 Frequency: 1.3MHz Output voltage: 0.6...3.6V DC Output current: 2A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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| AL17150-10BS7-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| DLPA006-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
Produkt ist nicht verfügbar |
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| DPO2039DABQ-13 | DIODES INCORPORATED |
Category: Integrated circuits - others Description: IC: power switch; U-QFN3030-16; USB port ESD protection Type of integrated circuit: power switch Case: U-QFN3030-16 Mounting: SMD Number of channels: 4 Supply voltage: 2.7...5.5V DC Output current: 0.6A Kind of output: N-Channel Application: USB port ESD protection Protection: anti-overvoltage OVP |
Produkt ist nicht verfügbar |
| DMC2990UDJ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.35/-0.24A
On-state resistance: 0.99/1.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT963
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.35/-0.24A
On-state resistance: 0.99/1.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT963
Produkt ist nicht verfügbar
| DMC2990UDJQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Produkt ist nicht verfügbar
| DMN2990UDJ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.3A; 0.35W; SOT963
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.3A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT963
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.3A; 0.35W; SOT963
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.3A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT963
Produkt ist nicht verfügbar
| DMN2990UFA-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.33A; 0.4W; X2-DFN0806-3
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.33A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: X2-DFN0806-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.33A; 0.4W; X2-DFN0806-3
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.33A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: X2-DFN0806-3
Produkt ist nicht verfügbar
| DMN2990UFB-7B |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 620mA
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 920mW
Polarisation: unipolar
Gate charge: 410pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Mounting: SMD
Case: X1-DFN1006-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 620mA
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 920mW
Polarisation: unipolar
Gate charge: 410pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Mounting: SMD
Case: X1-DFN1006-3
Produkt ist nicht verfügbar
| AP7343DQ-12W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.46V
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.46V
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Produkt ist nicht verfügbar
| AP7343DQ-18W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Produkt ist nicht verfügbar
| AP7343DQ-28W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.8V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.8V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Produkt ist nicht verfügbar
| AP7343DQ-33W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Produkt ist nicht verfügbar
| AP7343Q-09W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.51V
Output voltage: 0.9V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.51V
Output voltage: 0.9V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Produkt ist nicht verfügbar
| AP7343Q-18W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Produkt ist nicht verfügbar
| AP7370-50WR-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT25; SMD; 1÷2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.5A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Manufacturer series: AP7370
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT25; SMD; 1÷2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.5A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Manufacturer series: AP7370
Produkt ist nicht verfügbar
| AP7370-50WW-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT25; SMD; 1÷2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.5A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Manufacturer series: AP7370
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOT25; SMD; 1÷2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.5A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Manufacturer series: AP7370
Produkt ist nicht verfügbar
| AP64060QWU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 2.2MHz
Output voltage: 0.8...26V DC
Output current: 0.6A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: TSOT26
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 2.2MHz
Output voltage: 0.8...26V DC
Output current: 0.6A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: TSOT26
Produkt ist nicht verfügbar
| AP64060WU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 2.2MHz
Output voltage: 0.8...26V DC
Output current: 0.6A
Type of integrated circuit: PMIC
Input voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: TSOT26
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 2.2MHz
Output voltage: 0.8...26V DC
Output current: 0.6A
Type of integrated circuit: PMIC
Input voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: TSOT26
Produkt ist nicht verfügbar
| ZXTR2105FFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.089A; SOT23F; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.089A
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...60V
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.089A; SOT23F; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.089A
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...60V
Produkt ist nicht verfügbar
| SMAJ60CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| AP3417CKTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.4V DC
Output current: 1A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 94%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.4V DC
Output current: 1A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 94%
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 228+ | 0.31 EUR |
| 278+ | 0.26 EUR |
| 417+ | 0.17 EUR |
| ZXSC310E5TA |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DMT10H009LCG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 9.9A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 20.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
Case: V-DFN3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 9.9A
On-state resistance: 12.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 20.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
Case: V-DFN3333-8
Produkt ist nicht verfügbar
| DMT10H009LH3 |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Mounting: THT
Case: TO251
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 67A
Power dissipation: 61W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 336A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Mounting: THT
Case: TO251
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 67A
Power dissipation: 61W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 336A
Produkt ist nicht verfügbar
| DMT10H009LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 73A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 73A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
| DMT10H009LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 8A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 8A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
| DMT10H009LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 13.8mΩ
Drain current: 10A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 13.8mΩ
Drain current: 10A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
| DMT10H009SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 9.1mΩ
Drain current: 75A
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 9.1mΩ
Drain current: 75A
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
| DMT10H010LCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
On-state resistance: 6.9mΩ
Drain current: 62A
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
On-state resistance: 6.9mΩ
Drain current: 62A
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 92A
Produkt ist nicht verfügbar
| DMT10H010LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 275A
Power dissipation: 3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 275A
Power dissipation: 3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMT10H010LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
| DMT10H010SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 11.5mΩ
Drain current: 8.6A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 11.5mΩ
Drain current: 8.6A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
| DMT10H014LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 7.1A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 7.1A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
| DMT10H015LCG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
| DMT10H015LCG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
| DMT10H015LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 42.1A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 210A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 42.1A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 210A
Produkt ist nicht verfügbar
| DMT10H015LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 8A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 8A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
| DMT10H015LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 6.7A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 6.7A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
| DMT10H015SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 11.1mΩ
Drain current: 43A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 215A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 11.1mΩ
Drain current: 43A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 215A
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 95+ | 0.76 EUR |
| 109+ | 0.66 EUR |
| 117+ | 0.61 EUR |
| 125+ | 0.57 EUR |
| 500+ | 0.56 EUR |
| DMT10H015SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 19.5mΩ
Drain current: 6.1A
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 19.5mΩ
Drain current: 6.1A
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Produkt ist nicht verfügbar
| DMT10H017LPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 30.3mΩ
Drain current: 43.7A
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.6nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 30.3mΩ
Drain current: 43.7A
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.6nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
| DMT10H025LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 43.7mΩ
Drain current: 37.7A
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 185A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 43.7mΩ
Drain current: 37.7A
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 185A
Produkt ist nicht verfügbar
| DMT10H025LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 5.7A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 5.7A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
| DMT10H025SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 32.9A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 32.9A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Produkt ist nicht verfügbar
| DMT10H025SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 5.9A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 5.9A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Produkt ist nicht verfügbar
| DMT10H032LDV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 15A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 15A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
| DMT10H032LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 13A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 13A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Produkt ist nicht verfügbar
| DMT10H072LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
| DMT10H072LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
| DMT10H4M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 6.2mΩ
Drain current: 15A
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 6.2mΩ
Drain current: 15A
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
| SMCJ16CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| ZXLD1322DCCTC |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DMN3027LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Produkt ist nicht verfügbar
| DMN3027LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Produkt ist nicht verfügbar
| DMC4050SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AP62201WU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; 84%
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 84%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; 84%
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 84%
Produkt ist nicht verfügbar
| DXTN07100BFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
| AL8863SP-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 85+ | 0.84 EUR |
| 143+ | 0.5 EUR |
| 159+ | 0.45 EUR |
| 204+ | 0.35 EUR |
| 215+ | 0.33 EUR |
| AL8853S-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AP61200Z6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A
Operating temperature: -40...125°C
Kind of package: reel; tape
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A
Operating temperature: -40...125°C
Kind of package: reel; tape
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
| AL17150-10BS7-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| DLPA006-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
| DPO2039DABQ-13 |
Hersteller: DIODES INCORPORATED
Category: Integrated circuits - others
Description: IC: power switch; U-QFN3030-16; USB port ESD protection
Type of integrated circuit: power switch
Case: U-QFN3030-16
Mounting: SMD
Number of channels: 4
Supply voltage: 2.7...5.5V DC
Output current: 0.6A
Kind of output: N-Channel
Application: USB port ESD protection
Protection: anti-overvoltage OVP
Category: Integrated circuits - others
Description: IC: power switch; U-QFN3030-16; USB port ESD protection
Type of integrated circuit: power switch
Case: U-QFN3030-16
Mounting: SMD
Number of channels: 4
Supply voltage: 2.7...5.5V DC
Output current: 0.6A
Kind of output: N-Channel
Application: USB port ESD protection
Protection: anti-overvoltage OVP
Produkt ist nicht verfügbar