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DMN65D8LDW-7 DMN65D8LDW-7 DIODES INCORPORATED DMN65D8LDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
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DMN65D8LFB-7 DIODES INCORPORATED DMN65D8LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
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DMN65D8LDWQ-7 DMN65D8LDWQ-7 DIODES INCORPORATED DMN65D8LDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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DMN65D8LFB-7B DIODES INCORPORATED DMN65D8LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
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DMN65D8LQ-13 DMN65D8LQ-13 DIODES INCORPORATED DMN65D8LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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DMN65D8LQ-7 DMN65D8LQ-7 DIODES INCORPORATED DMN65D8LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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BZT52C12Q-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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ZXMP10A13FQTA ZXMP10A13FQTA DIODES INCORPORATED ZXMP10A13FQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.7A
Pulsed drain current: -3.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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175+0.41 EUR
186+0.39 EUR
250+0.35 EUR
500+0.33 EUR
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ZXMP10A13FTC ZXMP10A13FTC DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.7A
Pulsed drain current: -3.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN601DMK-7 DMN601DMK-7 DIODES INCORPORATED ds30657.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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D58V0M4U8MR-13 DIODES INCORPORATED D58V0M4U8MR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 24A; 2.7kW; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 58V
Semiconductor structure: unidirectional
Case: SO8
Max. forward impulse current: 24A
Leakage current: 0.2µA
Capacitance: 55pF
Kind of package: reel; tape
Number of channels: 4
Peak pulse power dissipation: 2.7kW
Application: Ethernet
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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481+0.15 EUR
538+0.13 EUR
610+0.12 EUR
633+0.11 EUR
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SMBJ40CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ15AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMP3004SSS-13 DMP3004SSS-13 DIODES INCORPORATED DMP3004SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -110A
Drain-source voltage: -30V
Drain current: -18.7A
Gate charge: 156nC
Kind of package: 13 inch reel; tape
On-state resistance: 6.5mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
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ZXTN19100CFFTA ZXTN19100CFFTA DIODES INCORPORATED ZXTN19100CFF.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 200...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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59+1.23 EUR
71+1.02 EUR
81+0.89 EUR
118+0.61 EUR
138+0.52 EUR
500+0.38 EUR
1000+0.36 EUR
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ZXTN25100DFHTA ZXTN25100DFHTA DIODES INCORPORATED ZXTN25100DFH.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Current gain: 20...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 175MHz
auf Bestellung 366 Stücke:
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74+0.97 EUR
104+0.69 EUR
131+0.55 EUR
158+0.45 EUR
188+0.38 EUR
250+0.34 EUR
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BAT54V-7 BAT54V-7 DIODES INCORPORATED ds30560.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; 5ns; reel,tape
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Load current: 0.2A
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
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715+0.1 EUR
794+0.09 EUR
964+0.074 EUR
1047+0.068 EUR
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DMG1023UV-7 DMG1023UV-7 DIODES INCORPORATED DMG1023UV.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 857 Stücke:
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129+0.56 EUR
166+0.43 EUR
194+0.37 EUR
338+0.21 EUR
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DMG1026UV-7 DMG1026UV-7 DIODES INCORPORATED DMG1026UV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1A
Power dissipation: 0.58W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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190+0.38 EUR
269+0.27 EUR
315+0.23 EUR
500+0.16 EUR
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AP61100Z6-7 AP61100Z6-7 DIODES INCORPORATED AP61100-AP61102.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 1A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...3.6V DC
Output current: 1A
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Frequency: 2.2MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
auf Bestellung 2940 Stücke:
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193+0.37 EUR
291+0.25 EUR
332+0.22 EUR
368+0.19 EUR
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AP61100QZ6-7 AP61100QZ6-7 DIODES INCORPORATED AP61100Q_AP61102Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 1A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...3.6V DC
Output current: 1A
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Frequency: 2.2MHz
Application: automotive industry
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
auf Bestellung 1360 Stücke:
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207+0.35 EUR
230+0.31 EUR
247+0.29 EUR
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AP2301AFGE-7 AP2301AFGE-7 DIODES INCORPORATED AP23x1A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Type of integrated circuit: power switch
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-DFN3030-8
On-state resistance: 70mΩ
Number of channels: 1
Output current: 2A
Supply voltage: 2.7...5.5V DC
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201+0.36 EUR
226+0.32 EUR
261+0.27 EUR
280+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 139
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ZDT6753TA DIODES INCORPORATED ZDT6753.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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ZDT6753TC DIODES INCORPORATED ZDT6753.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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ZTX415STZ DIODES INCORPORATED ZTX415.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
Produkt ist nicht verfügbar
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74LVC1G04QSE-7 DIODES INCORPORATED 74LVC1G04Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 9000 Stücke:
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3000+0.1 EUR
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DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 2330 Stücke:
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197+0.36 EUR
500+0.26 EUR
1000+0.23 EUR
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MMDT5451-7-F MMDT5451-7-F DIODES INCORPORATED ds30171.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 160/150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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281+0.25 EUR
329+0.22 EUR
525+0.14 EUR
645+0.11 EUR
953+0.075 EUR
1073+0.067 EUR
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ZXTD4591E6TA ZXTD4591E6TA DIODES INCORPORATED ZXTD4591E6.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 1.1W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.1W
Case: SOT26
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 289 Stücke:
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65+1.1 EUR
94+0.77 EUR
128+0.56 EUR
148+0.48 EUR
178+0.4 EUR
196+0.37 EUR
Mindestbestellmenge: 65
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DMP3056LSD-13 DMP3056LSD-13 DIODES INCORPORATED DMP3056LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 2367 Stücke:
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74+0.97 EUR
102+0.7 EUR
150+0.48 EUR
500+0.36 EUR
650+0.34 EUR
1000+0.32 EUR
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BCX38C BCX38C DIODES INCORPORATED BCX38A.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Pulsed collector current: 2A
auf Bestellung 3702 Stücke:
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61+1.17 EUR
95+0.76 EUR
112+0.64 EUR
141+0.51 EUR
200+0.45 EUR
500+0.39 EUR
1000+0.34 EUR
2000+0.33 EUR
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ZTX614 ZTX614 DIODES INCORPORATED ZTX614.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
auf Bestellung 3883 Stücke:
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139+0.52 EUR
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SMBJ26A-13-F SMBJ26A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1457 Stücke:
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275+0.26 EUR
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443+0.16 EUR
715+0.1 EUR
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SMBJ26AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DF08M
+1
 		DF08M DIODES INCORPORATED DF005_10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74AHCT1G32QSE-7 DIODES INCORPORATED 74AHCT1G32Q.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74AHCT1G32SE-7 DIODES INCORPORATED 74AHCT1G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
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74AHCT1G32W5-7 74AHCT1G32W5-7 DIODES INCORPORATED 74AHCT1G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
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74AHCT1G32QW5-7 DIODES INCORPORATED 74AHCT1G32Q.pdf Category: Gates, inverters
Description: IC: digital; OR; IN: 2; SMD; SOT25; -40÷125°C; 1uA; AHCT; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of inputs: 2
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Quiescent current: 1µA
Family: AHCT
Number of outputs: 1
auf Bestellung 12000 Stücke:
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74HCT164T14-13 DIODES INCORPORATED 74HCT164.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Mounting: SMD
Kind of output: push-pull
Kind of package: reel; tape
Type of integrated circuit: digital
Case: TSSOP14
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Number of channels: 8
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Produkt ist nicht verfügbar
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SMCJ33AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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TT410-13 DIODES INCORPORATED TT410.pdf Category: Bridge rectifiers - Unclassified
Description: TT410-13
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+0.43 EUR
Mindestbestellmenge: 1500
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US1DWFQ-7 DIODES INCORPORATED US1DWFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FMMT413TD DIODES INCORPORATED FMMT413A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 150MHz
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FMMT415TD DIODES INCORPORATED FMMT415.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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FMMT416TD DIODES INCORPORATED FMMT416.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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FMMT411TA DIODES INCORPORATED FMMT411.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.9A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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FMMT417TD DIODES INCORPORATED FMMT415.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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BZT52C3V0-7-F BZT52C3V0-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5945 Stücke:
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625+0.11 EUR
794+0.09 EUR
969+0.074 EUR
1345+0.053 EUR
1916+0.037 EUR
2184+0.033 EUR
3000+0.027 EUR
Mindestbestellmenge: 625
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DMMT2907A-7 DMMT2907A-7 DIODES INCORPORATED DMMT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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DGD2103MS8-13 DGD2103MS8-13 DIODES INCORPORATED DGD2103M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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74LVC1G57W6-7 DIODES INCORPORATED 74LVC1G57.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
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MMBTA56Q-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMAZ15-13-F SMAZ15-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 67mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3853 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
371+0.19 EUR
532+0.13 EUR
610+0.12 EUR
705+0.1 EUR
782+0.092 EUR
1000+0.086 EUR
3000+0.084 EUR
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FES1DEQ-7 DIODES INCORPORATED FES1DEQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 6465 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
388+0.18 EUR
747+0.096 EUR
782+0.092 EUR
1000+0.087 EUR
5000+0.079 EUR
Mindestbestellmenge: 264
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SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRD10100CT-13 DIODES INCORPORATED MBRD10100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
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MBRB10100CT-13 MBRB10100CT-13 DIODES INCORPORATED MBRB10100CT_Rev.5-2_Apr2016.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
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67+1.07 EUR
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DMN65D8LDW-7 DMN65D8LDW.pdf
DMN65D8LDW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
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DMN65D8LFB-7 DMN65D8LFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Produkt ist nicht verfügbar
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DMN65D8LDWQ-7 DMN65D8LDWQ.pdf
DMN65D8LDWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
Produkt ist nicht verfügbar
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DMN65D8LFB-7B DMN65D8LFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Produkt ist nicht verfügbar
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DMN65D8LQ-13 DMN65D8LQ.pdf
DMN65D8LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
Produkt ist nicht verfügbar
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DMN65D8LQ-7 DMN65D8LQ.pdf
DMN65D8LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C12Q-13-F ds18004.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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ZXMP10A13FQTA ZXMP10A13FQ.pdf
ZXMP10A13FQTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.7A
Pulsed drain current: -3.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
175+0.41 EUR
186+0.39 EUR
250+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 152
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ZXMP10A13FTC
ZXMP10A13FTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.7A
Pulsed drain current: -3.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN601DMK-7 ds30657.pdf
DMN601DMK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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D58V0M4U8MR-13 D58V0M4U8MR.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 24A; 2.7kW; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 58V
Semiconductor structure: unidirectional
Case: SO8
Max. forward impulse current: 24A
Leakage current: 0.2µA
Capacitance: 55pF
Kind of package: reel; tape
Number of channels: 4
Peak pulse power dissipation: 2.7kW
Application: Ethernet
Produkt ist nicht verfügbar
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SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
481+0.15 EUR
538+0.13 EUR
610+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ15AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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DMP3004SSS-13 DMP3004SSS.pdf
DMP3004SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -110A
Drain-source voltage: -30V
Drain current: -18.7A
Gate charge: 156nC
Kind of package: 13 inch reel; tape
On-state resistance: 6.5mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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ZXTN19100CFFTA ZXTN19100CFF.pdf
ZXTN19100CFFTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 200...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 3059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
71+1.02 EUR
81+0.89 EUR
118+0.61 EUR
138+0.52 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 59
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ZXTN25100DFHTA ZXTN25100DFH.pdf
ZXTN25100DFHTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Current gain: 20...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 175MHz
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
104+0.69 EUR
131+0.55 EUR
158+0.45 EUR
188+0.38 EUR
250+0.34 EUR
Mindestbestellmenge: 74
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BAT54V-7 ds30560.pdf
BAT54V-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; 5ns; reel,tape
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Load current: 0.2A
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
794+0.09 EUR
964+0.074 EUR
1047+0.068 EUR
Mindestbestellmenge: 715
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DMG1023UV-7 DMG1023UV.pdf
DMG1023UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
166+0.43 EUR
194+0.37 EUR
338+0.21 EUR
500+0.15 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1A
Power dissipation: 0.58W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
190+0.38 EUR
269+0.27 EUR
315+0.23 EUR
500+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
AP61100Z6-7 AP61100-AP61102.pdf
AP61100Z6-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 1A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...3.6V DC
Output current: 1A
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Frequency: 2.2MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
291+0.25 EUR
332+0.22 EUR
368+0.19 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
AP61100QZ6-7 AP61100Q_AP61102Q.pdf
AP61100QZ6-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 1A; SMD
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Output voltage: 0.6...3.6V DC
Output current: 1A
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Frequency: 2.2MHz
Application: automotive industry
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
auf Bestellung 1360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
207+0.35 EUR
230+0.31 EUR
247+0.29 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
AP2301AFGE-7 AP23x1A.pdf
AP2301AFGE-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Type of integrated circuit: power switch
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-DFN3030-8
On-state resistance: 70mΩ
Number of channels: 1
Output current: 2A
Supply voltage: 2.7...5.5V DC
auf Bestellung 2321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
201+0.36 EUR
226+0.32 EUR
261+0.27 EUR
280+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
ZDT6753TA ZDT6753.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZDT6753TC ZDT6753.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZTX415STZ ZTX415.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
Produkt ist nicht verfügbar
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74LVC1G04QSE-7 74LVC1G04Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMG4800LSD-13 DMG4800LSD.pdf
DMG4800LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
116+0.62 EUR
168+0.43 EUR
197+0.36 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
MMDT5451-7-F ds30171.pdf
MMDT5451-7-F
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 160/150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
281+0.25 EUR
329+0.22 EUR
525+0.14 EUR
645+0.11 EUR
953+0.075 EUR
1073+0.067 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
ZXTD4591E6TA ZXTD4591E6.pdf
ZXTD4591E6TA
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 1.1W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.1W
Case: SOT26
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
94+0.77 EUR
128+0.56 EUR
148+0.48 EUR
178+0.4 EUR
196+0.37 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
DMP3056LSD-13 DMP3056LSD.pdf
DMP3056LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 2367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
102+0.7 EUR
150+0.48 EUR
500+0.36 EUR
650+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
BCX38C BCX38A.pdf
BCX38C
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Pulsed collector current: 2A
auf Bestellung 3702 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
95+0.76 EUR
112+0.64 EUR
141+0.51 EUR
200+0.45 EUR
500+0.39 EUR
1000+0.34 EUR
2000+0.33 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
ZTX614 ZTX614.pdf
ZTX614
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
auf Bestellung 3883 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
89+0.81 EUR
139+0.52 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.37 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26A-13-F SMBJ_ser.pdf
SMBJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
275+0.26 EUR
327+0.22 EUR
443+0.16 EUR
715+0.1 EUR
794+0.09 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DF08M DF005_10M.pdf
DF08M
+1
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT1G32QSE-7 74AHCT1G32Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
Produkt ist nicht verfügbar
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74AHCT1G32SE-7 74AHCT1G32.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
Produkt ist nicht verfügbar
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74AHCT1G32W5-7 74AHCT1G32.pdf
74AHCT1G32W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT1G32QW5-7 74AHCT1G32Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; IN: 2; SMD; SOT25; -40÷125°C; 1uA; AHCT; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of inputs: 2
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Quiescent current: 1µA
Family: AHCT
Number of outputs: 1
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.093 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74HCT164T14-13 74HCT164.pdf
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Mounting: SMD
Kind of output: push-pull
Kind of package: reel; tape
Type of integrated circuit: digital
Case: TSSOP14
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Number of channels: 8
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Produkt ist nicht verfügbar
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SMCJ33AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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TT410-13 TT410.pdf
Hersteller: DIODES INCORPORATED
Category: Bridge rectifiers - Unclassified
Description: TT410-13
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+0.43 EUR
Mindestbestellmenge: 1500
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US1DWFQ-7 US1DWFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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FMMT413TD FMMT413A.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 150MHz
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FMMT415TD FMMT415.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
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FMMT416TD FMMT416.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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FMMT411TA FMMT411.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.9A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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FMMT417TD FMMT415.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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BZT52C3V0-7-F BZT52Cxx_ser.pdf
BZT52C3V0-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
794+0.09 EUR
969+0.074 EUR
1345+0.053 EUR
1916+0.037 EUR
2184+0.033 EUR
3000+0.027 EUR
Mindestbestellmenge: 625
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DMMT2907A-7 DMMT2907A.pdf
DMMT2907A-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DGD2103MS8-13 DGD2103M.pdf
DGD2103MS8-13
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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74LVC1G57W6-7 74LVC1G57.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
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MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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SMAZ15-13-F SMAZx-13-F.pdf
SMAZ15-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 67mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3853 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
371+0.19 EUR
532+0.13 EUR
610+0.12 EUR
705+0.1 EUR
782+0.092 EUR
1000+0.086 EUR
3000+0.084 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
FES1DEQ-7 FES1DEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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SMAJ28CA-13-F SMAJ_ser.pdf
SMAJ28CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 6465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
388+0.18 EUR
747+0.096 EUR
782+0.092 EUR
1000+0.087 EUR
5000+0.079 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRD10100CT-13 MBRD10100CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
Produkt ist nicht verfügbar
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MBRB10100CT-13 MBRB10100CT_Rev.5-2_Apr2016.pdf
MBRB10100CT-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
Mindestbestellmenge: 67
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