Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74200) > Seite 1236 nach 1237
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AP2115R5-1.2TRG1 | DIODES INCORPORATED |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
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Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AP2115R5-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AP2115R5A-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMCJ170A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Breakdown voltage: 189...209V Max. forward impulse current: 5.5A Peak pulse power dissipation: 1.5kW Features of semiconductor devices: glass passivated Max. off-state voltage: 170V Semiconductor structure: unidirectional Leakage current: 5µA Type of diode: TVS |
auf Bestellung 1439 Stücke: Lieferzeit 14-21 Tag (e) |
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| APX321SEG-7 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; Uoper: 2.5÷5.5V; SC70-5 Input offset voltage: 7mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Integrated circuit features: low voltage; rail-to-rail Input bias current: 0.25µA Kind of package: reel; tape Case: SC70-5 Number of channels: 1 Operating voltage: 2.5...5.5V Bandwidth: 1MHz Mounting: SMT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FZT1149ATA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223 Mounting: SMD Manufacturer standard package: 1000pcs. Collector-emitter voltage: 25V Power dissipation: 3W Polarisation: bipolar Pulsed collector current: 10A Type of transistor: PNP Current gain: 50...800 Kind of package: reel; tape Case: SOT223 Frequency: 135MHz Collector current: 4A |
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BAV99DWQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series x2 Case: SOT363 Capacitance: 2pF Max. forward impulse current: 2A Max. forward voltage: 1.25V Features of semiconductor devices: small signal Application: automotive industry Kind of package: reel; tape |
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DXT651-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 2W Case: SOT89 Pulsed collector current: 6A Current gain: 40...300 Mounting: SMD Kind of package: reel; tape Frequency: 140...200MHz Manufacturer standard package: 2500pcs. |
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DXT651Q-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 2W Case: SOT89 Pulsed collector current: 6A Current gain: 40...300 Mounting: SMD Kind of package: reel; tape Frequency: 140...200MHz Manufacturer standard package: 2500pcs. Application: automotive industry |
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| DMP2160UFDBQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Mounting: SMD Gate charge: 6.5nC Polarisation: unipolar Drain current: -3.8A Kind of channel: enhancement Drain-source voltage: -20V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 86mΩ Pulsed drain current: -13A Power dissipation: 1.4W |
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DMG6601LVT-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3/-2A Power dissipation: 0.54W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.065/0.142Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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DDZX10C-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape Tolerance: ±2.5% Mounting: SMD Power dissipation: 0.3W Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Zener voltage: 10V Type of diode: Zener |
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ZXMN2F34FHTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23 Mounting: SMD Power dissipation: 0.95W Polarisation: unipolar Drain current: 2.9A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.12Ω |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR0240LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A Type of diode: Schottky switching Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape Max. forward impulse current: 5A Technology: SBR® |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ9.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 2399 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ90CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 2.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Power dissipation: 1.5W Gate charge: 7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Power dissipation: 1.9W Gate charge: 7nC Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A |
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| DMT3020LFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD Pulsed drain current: 80A |
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| DMT3006LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Power dissipation: 27.8W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 10mΩ Mounting: SMD Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Power dissipation: 2W Gate charge: 16.7nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3003LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Power dissipation: 2.4W Gate charge: 44nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3003LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Power dissipation: 2.4W Gate charge: 44nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3003LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Power dissipation: 2.4W Gate charge: 44nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Power dissipation: 2.7W Gate charge: 43.7nC Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 6mΩ Mounting: SMD Pulsed drain current: 180A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Power dissipation: 27.8W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 10mΩ Mounting: SMD Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Power dissipation: 2W Gate charge: 16.7nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LPB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Power dissipation: 1.7W Gate charge: 12.6nC Polarisation: unipolar Drain current: 9/11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 14mΩ Mounting: SMD Pulsed drain current: 80...100A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3008LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6 Power dissipation: 2.1W Gate charge: 5.8nC Polarisation: unipolar Drain-source voltage: 30V Type of transistor: N-MOSFET Case: DFN2020-6 On-state resistance: 10mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Power dissipation: 0.4W Gate charge: 7nC Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020UFDB-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Power dissipation: 1.3W Gate charge: 8.8nC Polarisation: unipolar Drain current: 5.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 30mΩ Mounting: SMD Pulsed drain current: 35A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT30M9LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Power dissipation: 2.6W Gate charge: 160.5nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 1.6mΩ Mounting: SMD Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DMT6009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Drain current: 11.5A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 12mΩ Mounting: SMD Pulsed drain current: 60A Power dissipation: 1.6W Gate charge: 33.5nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ZXTP2009ZQTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 5.5A Power dissipation: 3W Case: SOT89 Pulsed collector current: 15A Current gain: 110...550 Mounting: SMD Kind of package: reel; tape Frequency: 152MHz Application: automotive industry Manufacturer standard package: 1000pcs. |
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Im Einkaufswagen Stück im Wert von UAH |
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ZXTP2009ZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 5.5A Power dissipation: 3W Case: SOT89 Pulsed collector current: 15A Current gain: 110...550 Mounting: SMD Kind of package: reel; tape Frequency: 152MHz Manufacturer standard package: 1000pcs. |
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ZX5T3ZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 5.5A Power dissipation: 3W Case: SOT89 Pulsed collector current: 15A Current gain: 110...550 Mounting: SMD Kind of package: reel; tape Frequency: 152MHz Manufacturer standard package: 1000pcs. |
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ZXTP2012ZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4.3A Power dissipation: 1.5W Case: SOT89 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Manufacturer standard package: 1000pcs. |
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ZXTP2012ZQTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4.3A Power dissipation: 2.1W Case: SOT89 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Manufacturer standard package: 1000pcs. Application: automotive industry |
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ZXTP2008ZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 5.5A Power dissipation: 1.5W Case: SOT89 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 110MHz Manufacturer standard package: 1000pcs. |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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FCX718TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 2.5A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 2.5A Power dissipation: 2W Case: SOT89 Pulsed collector current: 6A Current gain: 35...475 Mounting: SMD Kind of package: reel; tape Frequency: 150...180MHz Manufacturer standard package: 1000pcs. |
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| B350AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Capacitance: 0.11nF Max. forward voltage: 0.65V Max. forward impulse current: 80A Kind of package: reel; tape Leakage current: 24mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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B350AQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Capacitance: 0.2nF Max. forward voltage: 0.7V Max. forward impulse current: 80A Kind of package: reel; tape Power dissipation: 0.85W Application: automotive industry Leakage current: 20mA |
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SMCJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 23.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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AP62201Z6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; SOT563 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.2...18V DC Output voltage: 0.8...7V DC Output current: 2A Case: SOT563 Mounting: SMD Frequency: 750kHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 84% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SB3100-T | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Case: DO201AD Max. forward voltage: 0.79V Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 100A |
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PDS3100-13-83 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 90A Kind of package: reel; tape |
auf Bestellung 2288 Stücke: Lieferzeit 14-21 Tag (e) |
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PDS3100Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.76V Max. forward impulse current: 90A Kind of package: reel; tape Application: automotive industry Leakage current: 20mA |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3016LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 8.2/-6.2A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.028/0.016Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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2N7002DW-7-F | DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 5975 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56HDWQ-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Features of semiconductor devices: small signal Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS40DW-06-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape Capacitance: 5pF Type of diode: Schottky switching Reverse recovery time: 5ns Mounting: SMD Max. forward impulse current: 0.6A Max. forward voltage: 1V Power dissipation: 0.2W Max. off-state voltage: 40V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common anode; double x2 Leakage current: 0.2µA Case: SOT363 |
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BAS70DW-06-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape Capacitance: 2pF Type of diode: Schottky switching Reverse recovery time: 5ns Mounting: SMD Max. forward impulse current: 0.1A Max. forward voltage: 1V Power dissipation: 0.2W Max. off-state voltage: 70V Load current: 70mA Kind of package: reel; tape Semiconductor structure: common anode; double x2 Leakage current: 0.1µA Case: SOT363 |
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DMP6023LE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.2A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.2A Power dissipation: 2W Case: SOT223 On-state resistance: 28mΩ Mounting: SMD Gate charge: 53.1nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AP2115R5-1.2TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| AP2115R5-2.5TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| AP2115R5A-2.5TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| SMCJ170A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Leakage current: 5µA
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Leakage current: 5µA
Type of diode: TVS
auf Bestellung 1439 Stücke:
Lieferzeit 14-21 Tag (e)
| APX321SEG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; Uoper: 2.5÷5.5V; SC70-5
Input offset voltage: 7mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.25µA
Kind of package: reel; tape
Case: SC70-5
Number of channels: 1
Operating voltage: 2.5...5.5V
Bandwidth: 1MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; Uoper: 2.5÷5.5V; SC70-5
Input offset voltage: 7mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.25µA
Kind of package: reel; tape
Case: SC70-5
Number of channels: 1
Operating voltage: 2.5...5.5V
Bandwidth: 1MHz
Mounting: SMT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FZT1149ATA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 25V
Power dissipation: 3W
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 50...800
Kind of package: reel; tape
Case: SOT223
Frequency: 135MHz
Collector current: 4A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 25V
Power dissipation: 3W
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 50...800
Kind of package: reel; tape
Case: SOT223
Frequency: 135MHz
Collector current: 4A
Produkt ist nicht verfügbar
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| BAV99DWQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Capacitance: 2pF
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Application: automotive industry
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Capacitance: 2pF
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
| DXT651-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
Produkt ist nicht verfügbar
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| DXT651Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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| DMP2160UFDBQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Mounting: SMD
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 86mΩ
Pulsed drain current: -13A
Power dissipation: 1.4W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Mounting: SMD
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 86mΩ
Pulsed drain current: -13A
Power dissipation: 1.4W
Produkt ist nicht verfügbar
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| DMG6601LVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| DDZX10C-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Tolerance: ±2.5%
Mounting: SMD
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 10V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Tolerance: ±2.5%
Mounting: SMD
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 10V
Type of diode: Zener
Produkt ist nicht verfügbar
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| ZXMN2F34FHTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23
Mounting: SMD
Power dissipation: 0.95W
Polarisation: unipolar
Drain current: 2.9A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.12Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23
Mounting: SMD
Power dissipation: 0.95W
Polarisation: unipolar
Drain current: 2.9A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.12Ω
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
| SBR0240LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Max. forward impulse current: 5A
Technology: SBR®
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Max. forward impulse current: 5A
Technology: SBR®
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ9.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ90CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DMT3020LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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| DMT3020LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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| DMT3020LDV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020LFDBQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT3006LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| DMT3006LFV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3020LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3003LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3003LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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| DMT3003LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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| DMT3004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Power dissipation: 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Pulsed drain current: 180A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Power dissipation: 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Pulsed drain current: 180A
Produkt ist nicht verfügbar
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| DMT3006LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3006LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3006LFVQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3006LPB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Power dissipation: 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 80...100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Power dissipation: 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 80...100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| DMT3008LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Power dissipation: 2.1W
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Power dissipation: 2.1W
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3020LFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| DMT3020LFDBQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| DMT3020LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT3020LFDFQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Power dissipation: 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Power dissipation: 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Power dissipation: 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 35A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Power dissipation: 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| DMT30M9LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Power dissipation: 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Power dissipation: 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMT6009LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Drain current: 11.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.6W
Gate charge: 33.5nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Drain current: 11.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 1.6W
Gate charge: 33.5nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| ZXTP2009ZQTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Application: automotive industry
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Application: automotive industry
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTP2009ZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZX5T3ZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZXTP2012ZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
| ZXTP2012ZQTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 2.1W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 2.1W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZXTP2008ZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
| FCX718TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2.5A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 35...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 150...180MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2.5A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 35...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 150...180MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| B350AF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.65V
Max. forward impulse current: 80A
Kind of package: reel; tape
Leakage current: 24mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.65V
Max. forward impulse current: 80A
Kind of package: reel; tape
Leakage current: 24mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| B350AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Power dissipation: 0.85W
Application: automotive industry
Leakage current: 20mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Power dissipation: 0.85W
Application: automotive industry
Leakage current: 20mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SMCJ40CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2806 Stücke:
Lieferzeit 14-21 Tag (e)
| AP62201Z6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; SOT563
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 84%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; SOT563
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 84%
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| SB3100-T |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Case: DO201AD
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Case: DO201AD
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)
| PDS3100-13-83 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 90A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 90A
Kind of package: reel; tape
auf Bestellung 2288 Stücke:
Lieferzeit 14-21 Tag (e)
| PDS3100Q-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 20mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 20mA
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
| DMC3016LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.016Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.016Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002DW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)
| BAW56HDWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| BAS40DW-06-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Capacitance: 5pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.2µA
Case: SOT363
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Capacitance: 5pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.2µA
Case: SOT363
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| BAS70DW-06-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Capacitance: 2pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 70V
Load current: 70mA
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.1µA
Case: SOT363
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Capacitance: 2pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 70V
Load current: 70mA
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.1µA
Case: SOT363
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| DMP6023LE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.2A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.2A
Power dissipation: 2W
Case: SOT223
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.2A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.2A
Power dissipation: 2W
Case: SOT223
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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