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ES1A-13-F DIODES INCORPORATED ds14001.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 25ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 20pF
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
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BCV49TA BCV49TA DIODES INCORPORATED BCV49.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.1W
Case: SOT89
Pulsed collector current: 0.8A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 170MHz
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SBR10M100P5Q-13 DIODES INCORPORATED SBR10M100P5Q.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 10A; PowerDI®5; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Technology: SBR®
Kind of package: reel; tape
Application: automotive industry
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DDZ9699T-7 DDZ9699T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD67B5E197258BF&compId=DDZ9xxxT.pdf?ci_sign=7f4712d34abf10f622bd8d826c39493e35400d55 Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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DDZ9699-7 DDZ9699-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAFA2464FD0F5A0C7&compId=DDZ9689-7.pdf?ci_sign=05597935c68b55bc9ecc5af47c59eeca288462c8 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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DDZ9699S-7 DIODES INCORPORATED ds30409.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZ9699Q-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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S1B-13-F S1B-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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511+0.14 EUR
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778+0.092 EUR
1076+0.066 EUR
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US1B-13-F US1B-13-F DIODES INCORPORATED ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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RS1B-13-F RS1B-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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ZXTN26020DMFTA DIODES INCORPORATED ZXTN26020DMF.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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AP7384-50V-A AP7384-50V-A DIODES INCORPORATED AP7384.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 50mA
Case: TO92
Mounting: THT
Manufacturer series: AP7384
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
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AP7384-50Y-13 AP7384-50Y-13 DIODES INCORPORATED AP7384.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 50mA
Case: SOT89
Mounting: SMD
Manufacturer series: AP7384
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
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MMBD4448W-7-F MMBD4448W-7-F DIODES INCORPORATED ds30095.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; SOT323; Ufmax: 1.25V; Ifsm: 4A
Case: SOT323
Load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
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633+0.11 EUR
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1303+0.055 EUR
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MMBD4448-7-F MMBD4448-7-F DIODES INCORPORATED MMBD4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; SOT23; Ufmax: 1.25V; Ifsm: 4A
Case: SOT23
Load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
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MMBD4448HTS-7-F MMBD4448HTS-7-F DIODES INCORPORATED ds30263.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; SOT523; Ufmax: 1.25V; Ifsm: 4A
Case: SOT523
Load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: double series
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
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MMBD4448DW-7-F MMBD4448DW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98582134085E658BF&compId=MMBD4448DW.pdf?ci_sign=0096c3e3dd2fea235042f14bc5006fc36cc85f64 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 4A
Case: SOT363
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.25A
Max. load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 75V
Kind of package: reel; tape
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
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MMBD4448HCQW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT353; reel,tape
Case: SOT353
Reverse recovery time: 4ns
Load current: 0.5A
Max. off-state voltage: 80V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common cathode; quadruple
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
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MMBD4448HSDW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
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MMBD4448HTC-7-F DIODES INCORPORATED ds30263.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448HTW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448H-7-F DIODES INCORPORATED ds30176.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448HADW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448HAQW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; quadruple
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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MMBD4448HCDW-7-F DIODES INCORPORATED MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448HT-7-F DIODES INCORPORATED ds30263.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448HTA-7-F DIODES INCORPORATED ds30263.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448HTM-7-F DIODES INCORPORATED MMBD4448HTM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MMBD4448V-7 DIODES INCORPORATED MMBD4448V.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT563; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Case: SOT563
Kind of package: reel; tape
Features of semiconductor devices: small signal
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DMN3023L-7 DMN3023L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C94DB7D02698BF&compId=DMN3023L.pdf?ci_sign=4cecbfc42c6179a99a781b626d4b95877d0c15ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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180+0.4 EUR
224+0.32 EUR
358+0.2 EUR
424+0.17 EUR
550+0.13 EUR
582+0.12 EUR
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DMN3033LSN-7 DMN3033LSN-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C96C3E7BCDD8BF&compId=DMN3033LSN.pdf?ci_sign=9e4635916e6ae54c16f8302a149f284d14897fdb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2015 Stücke:
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132+0.54 EUR
152+0.47 EUR
368+0.19 EUR
388+0.18 EUR
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DMN3053L-7 DMN3053L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C978F625B818BF&compId=DMN3053L.pdf?ci_sign=feb7beb4f5a3c0a1432a1d2c2ada7e4049275519 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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265+0.27 EUR
304+0.24 EUR
472+0.15 EUR
500+0.14 EUR
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DMN3028LQ-7 DMN3028LQ-7 DIODES INCORPORATED DMN3028LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 40A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN3016LSS-13 DMN3016LSS-13 DIODES INCORPORATED DMN3016LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3018SSS-13 DMN3018SSS-13 DIODES INCORPORATED DMN3018SSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 60A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3025LSS-13 DMN3025LSS-13 DIODES INCORPORATED DMN3025LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 40A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Pulsed drain current: 40A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3070SSN-7 DMN3070SSN-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C98720DE5F78BF&compId=DMN3070SSN.pdf?ci_sign=069a021696a62c76244d721c27629fbe1e1ddcbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.3A; 0.5W; SC59; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.3A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DMN30H4D0LFDE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C98F4FE9CB18BF&compId=DMN30H4D0LFDE.pdf?ci_sign=1af3f78a44f9907d9f9e864b435f8c849ac1051e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Case: U-DFN2020-6
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Kind of package: 7 inch reel; tape
Polarisation: unipolar
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DMN3010LK3-13 DIODES INCORPORATED DMN3010LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.5A
Pulsed drain current: 90A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3016LPS-13 DIODES INCORPORATED DMN3016LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.8A; Idm: 70A; 2.75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.8A
Pulsed drain current: 70A
Power dissipation: 2.75W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3021LFDF-7 DIODES INCORPORATED DMN3021LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.4A
Pulsed drain current: 50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3025LFDF-7 DIODES INCORPORATED DMN3025LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3025LFV-13 DIODES INCORPORATED DMN3025LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 55A
Power dissipation: 2.2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3035LWN-7 DIODES INCORPORATED DMN3035LWN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 30A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3009SFG-7 DIODES INCORPORATED DMN3009SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3016LK3-13 DIODES INCORPORATED DMN3016LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; Idm: 90A; 1.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Pulsed drain current: 90A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3020UFDF-7 DIODES INCORPORATED DMN3020UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3008SFG-13 DIODES INCORPORATED DMN3008SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3008SFG-7 DIODES INCORPORATED DMN3008SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3008SFGQ-13 DIODES INCORPORATED DMN3008SFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN32D2LDF-7 DMN32D2LDF-7 DIODES INCORPORATED ds31238.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Semiconductor structure: common source
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
219+0.33 EUR
321+0.22 EUR
382+0.19 EUR
812+0.088 EUR
860+0.083 EUR
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DMN32D2LFB4-7 DIODES INCORPORATED ds31124.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Mounting: SMD
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X2-DFN1006-3
Polarisation: unipolar
Kind of package: 7 inch reel; tape
On-state resistance: 2.2Ω
Power dissipation: 0.35W
Drain current: 0.3A
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DMN32D4SDW-13 DMN32D4SDW-13 DIODES INCORPORATED DMN32D4SDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Gate charge: 1.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT363
Polarisation: unipolar
Kind of package: 13 inch reel; tape
On-state resistance: 1Ω
Power dissipation: 0.35W
Drain current: 0.5A
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DMN32D4SDW-7 DMN32D4SDW-7 DIODES INCORPORATED DMN32D4SDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Gate charge: 1.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT363
Polarisation: unipolar
Kind of package: 7 inch reel; tape
On-state resistance: 1Ω
Power dissipation: 0.35W
Drain current: 0.5A
Produkt ist nicht verfügbar
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PD3S130LQ-7 DIODES INCORPORATED PD3S130LQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Leakage current: 40µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PD3S130HQ-7 DIODES INCORPORATED PD3S130HQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 0.1mA
Max. forward impulse current: 22A
Kind of package: reel; tape
Capacitance: 40pF
Application: automotive industry
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PD3S130L-7 DIODES INCORPORATED ds30671.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Leakage current: 1.5mA
Max. forward impulse current: 22A
Kind of package: reel; tape
Capacitance: 40pF
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SMBJ36CA-13-F DIODES INCORPORATED ds19002.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ36CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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APX803L20-35C3-7 APX803L20-35C3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Case: SOT323
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
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ES1A-13-F ds14001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 25ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 20pF
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
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BCV49TA BCV49.pdf
BCV49TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.1W
Case: SOT89
Pulsed collector current: 0.8A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 170MHz
auf Bestellung 160 Stücke:
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129+0.56 EUR
160+0.44 EUR
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SBR10M100P5Q-13 SBR10M100P5Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 10A; PowerDI®5; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Technology: SBR®
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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DDZ9699T-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD67B5E197258BF&compId=DDZ9xxxT.pdf?ci_sign=7f4712d34abf10f622bd8d826c39493e35400d55
DDZ9699T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 495 Stücke:
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264+0.27 EUR
353+0.2 EUR
435+0.16 EUR
495+0.14 EUR
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DDZ9699-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAFA2464FD0F5A0C7&compId=DDZ9689-7.pdf?ci_sign=05597935c68b55bc9ecc5af47c59eeca288462c8
DDZ9699-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
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Anzahl Preis
228+0.31 EUR
506+0.14 EUR
662+0.11 EUR
1078+0.066 EUR
1662+0.043 EUR
2294+0.031 EUR
2428+0.029 EUR
Mindestbestellmenge: 228
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DDZ9699S-7 ds30409.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZ9699Q-7 ds30410.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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S1B-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 2309 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
511+0.14 EUR
682+0.1 EUR
778+0.092 EUR
1076+0.066 EUR
2309+0.031 EUR
Mindestbestellmenge: 385
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US1B-13-F ds16008.pdf
US1B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 241 Stücke:
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218+0.33 EUR
241+0.3 EUR
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RS1B-13-F ds15002.pdf
RS1B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZXTN26020DMFTA ZXTN26020DMF.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.3 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP7384-50V-A AP7384.pdf
AP7384-50V-A
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 50mA
Case: TO92
Mounting: THT
Manufacturer series: AP7384
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Produkt ist nicht verfügbar
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AP7384-50Y-13 AP7384.pdf
AP7384-50Y-13
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 50mA
Case: SOT89
Mounting: SMD
Manufacturer series: AP7384
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Produkt ist nicht verfügbar
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MMBD4448W-7-F ds30095.pdf
MMBD4448W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; SOT323; Ufmax: 1.25V; Ifsm: 4A
Case: SOT323
Load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
633+0.11 EUR
957+0.075 EUR
1303+0.055 EUR
2137+0.033 EUR
2263+0.032 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448-7-F MMBD4448.pdf
MMBD4448-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; SOT23; Ufmax: 1.25V; Ifsm: 4A
Case: SOT23
Load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
561+0.13 EUR
878+0.082 EUR
1036+0.069 EUR
Mindestbestellmenge: 561
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HTS-7-F ds30263.pdf
MMBD4448HTS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.5A; SOT523; Ufmax: 1.25V; Ifsm: 4A
Case: SOT523
Load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: double series
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
575+0.12 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448DW-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE98582134085E658BF&compId=MMBD4448DW.pdf?ci_sign=0096c3e3dd2fea235042f14bc5006fc36cc85f64
MMBD4448DW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 4A
Case: SOT363
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.25A
Max. load current: 0.5A
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Max. off-state voltage: 75V
Kind of package: reel; tape
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
auf Bestellung 532 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HCQW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT353; reel,tape
Case: SOT353
Reverse recovery time: 4ns
Load current: 0.5A
Max. off-state voltage: 80V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common cathode; quadruple
Features of semiconductor devices: small signal
Type of diode: switching
Mounting: SMD
auf Bestellung 2155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
204+0.35 EUR
268+0.27 EUR
443+0.16 EUR
468+0.15 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HSDW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBD4448HTC-7-F ds30263.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HTW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4448H-7-F ds30176.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HADW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HAQW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; quadruple
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Produkt ist nicht verfügbar
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MMBD4448HCDW-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4448HT-7-F ds30263.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD4448HTA-7-F ds30263.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4448HTM-7-F MMBD4448HTM.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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MMBD4448V-7 MMBD4448V.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.5A; 4ns; SOT563; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Case: SOT563
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3023L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C94DB7D02698BF&compId=DMN3023L.pdf?ci_sign=4cecbfc42c6179a99a781b626d4b95877d0c15ab
DMN3023L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
180+0.4 EUR
224+0.32 EUR
358+0.2 EUR
424+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
DMN3033LSN-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C96C3E7BCDD8BF&compId=DMN3033LSN.pdf?ci_sign=9e4635916e6ae54c16f8302a149f284d14897fdb
DMN3033LSN-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
132+0.54 EUR
152+0.47 EUR
368+0.19 EUR
388+0.18 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
DMN3053L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C978F625B818BF&compId=DMN3053L.pdf?ci_sign=feb7beb4f5a3c0a1432a1d2c2ada7e4049275519
DMN3053L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1098 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
196+0.37 EUR
265+0.27 EUR
304+0.24 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
DMN3028LQ-7 DMN3028LQ.pdf
DMN3028LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 40A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMN3016LSS-13 DMN3016LSS.pdf
DMN3016LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3018SSS-13 DMN3018SSS.pdf
DMN3018SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 60A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3025LSS-13 DMN3025LSS.pdf
DMN3025LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 40A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Pulsed drain current: 40A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3070SSN-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C98720DE5F78BF&compId=DMN3070SSN.pdf?ci_sign=069a021696a62c76244d721c27629fbe1e1ddcbe
DMN3070SSN-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.3A; 0.5W; SC59; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.3A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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DMN30H4D0LFDE-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C98F4FE9CB18BF&compId=DMN30H4D0LFDE.pdf?ci_sign=1af3f78a44f9907d9f9e864b435f8c849ac1051e
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Case: U-DFN2020-6
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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DMN3010LK3-13 DMN3010LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.5A
Pulsed drain current: 90A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3016LPS-13 DMN3016LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.8A; Idm: 70A; 2.75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.8A
Pulsed drain current: 70A
Power dissipation: 2.75W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3021LFDF-7 DMN3021LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.4A
Pulsed drain current: 50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3025LFDF-7 DMN3025LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3025LFV-13 DMN3025LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 55A
Power dissipation: 2.2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3035LWN-7 DMN3035LWN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 30A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 30A
Power dissipation: 1.1W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3009SFG-7 DMN3009SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3016LK3-13 DMN3016LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; Idm: 90A; 1.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Pulsed drain current: 90A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3020UFDF-7 DMN3020UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3008SFG-13 DMN3008SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3008SFG-7 DMN3008SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3008SFGQ-13 DMN3008SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Semiconductor structure: common source
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
219+0.33 EUR
321+0.22 EUR
382+0.19 EUR
812+0.088 EUR
860+0.083 EUR
Mindestbestellmenge: 162
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DMN32D2LFB4-7 ds31124.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Mounting: SMD
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X2-DFN1006-3
Polarisation: unipolar
Kind of package: 7 inch reel; tape
On-state resistance: 2.2Ω
Power dissipation: 0.35W
Drain current: 0.3A
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DMN32D4SDW-13 DMN32D4SDW.pdf
DMN32D4SDW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Gate charge: 1.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT363
Polarisation: unipolar
Kind of package: 13 inch reel; tape
On-state resistance: 1Ω
Power dissipation: 0.35W
Drain current: 0.5A
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DMN32D4SDW-7 DMN32D4SDW.pdf
DMN32D4SDW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Gate charge: 1.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT363
Polarisation: unipolar
Kind of package: 7 inch reel; tape
On-state resistance: 1Ω
Power dissipation: 0.35W
Drain current: 0.5A
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PD3S130LQ-7 PD3S130LQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Leakage current: 40µA
Max. forward impulse current: 22A
Kind of package: reel; tape
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PD3S130HQ-7 PD3S130HQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 0.1mA
Max. forward impulse current: 22A
Kind of package: reel; tape
Capacitance: 40pF
Application: automotive industry
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PD3S130L-7 ds30671.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Leakage current: 1.5mA
Max. forward impulse current: 22A
Kind of package: reel; tape
Capacitance: 40pF
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SMBJ36CA-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ36CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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APX803L20-35C3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L20-35C3-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT323
Case: SOT323
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
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