DDTD123EC-7-F Diodes Zetex
auf Bestellung 255000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.05 EUR |
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Technische Details DDTD123EC-7-F Diodes Zetex
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DDTD123EC-7-F nach Preis ab 0.05 EUR bis 0.48 EUR
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DDTD123EC-7-F | Hersteller : Diodes Incorporated |
 Description: TRANS PREBIAS NPN 50V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 255000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 255604 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F | Hersteller : Diodes Incorporated |
Digital Transistors 200MW 2.2K |
auf Bestellung 6049 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F Produktcode: 215420
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Lieblingsprodukt
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Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden |
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DDTD123EC-7-F | Hersteller : Diodes Zetex |
Trans Digital BJT NPN 40V 0.5A 200mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DDTD123EC-7-F | Hersteller : Diodes Inc |
Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| DDTD123EC-7-F | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 39 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
Produkt ist nicht verfügbar |