Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74055) > Seite 1232 nach 1235
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| DMP1055UFDB-7 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.89W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.215Ω Pulsed drain current: -25A Gate charge: 20.8nC Drain current: -4A Kind of channel: enhancement Drain-source voltage: -12V Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMP2065UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 0.74W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.1Ω Drain current: -3.2A Kind of channel: enhancement Drain-source voltage: -20V Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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| DMP2110UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar Type of transistor: P-MOSFET x2 Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DXTN5820DFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 6A Power dissipation: 1.25W Case: U-DFN2020-3 Pulsed collector current: 8A Mounting: SMD Frequency: 80MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DXTN5840CFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 5A Power dissipation: 1.25W Case: U-DFN2020-3 Pulsed collector current: 7A Mounting: SMD Frequency: 150MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DXTP5820CFDB-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 6A Power dissipation: 0.69W Case: U-DFN2020-3 Pulsed collector current: 8A Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
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| DXTN58100CFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.25W Case: U-DFN2020-3 Pulsed collector current: 6A Mounting: SMD Frequency: 150MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMN2053UFDB-7 | DIODES INCORPORATED |
Category: Transistors - Unclassified Description: DMN2053UFDB-7 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2090UFDB-7 | DIODES INCORPORATED |
Category: Transistors - Unclassified Description: DMP2090UFDB-7 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2165UW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 3.5nC |
auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3016LFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 25.1nC |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002T-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| 2N7002TQ-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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ZXTP08400BFFTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.2A Power dissipation: 0.84W Case: SOT23F Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 70MHz Manufacturer standard package: 3000pcs. |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTX696BSTZ | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 180V Collector current: 0.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 70MHz |
auf Bestellung 1956 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS40BRW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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FZT705TC | DIODES INCORPORATED |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington |
Produkt ist nicht verfügbar |
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FZT705TA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington Pulsed collector current: 4A |
Produkt ist nicht verfügbar |
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FZT7053TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 200MHz Collector current: 1.5A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 100V Power dissipation: 2W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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FZT705QTA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Application: automotive industry Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington Pulsed collector current: 4A |
Produkt ist nicht verfügbar |
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D5V0L2B3SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Leakage current: 0.1µA Number of channels: 2 Capacitance: 20pF Kind of package: reel; tape |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ100CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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B160AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 30A Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 8mA Capacitance: 45pF Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B160AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 30A Case: SMA flat Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.2mA Capacitance: 45pF Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
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B160B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Capacitance: 0.11nF Type of diode: Schottky rectifying |
auf Bestellung 5525 Stücke: Lieferzeit 14-21 Tag (e) |
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B160S1F-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.65V Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 8.2mA Case: SOD123F Capacitance: 45pF Type of diode: Schottky rectifying |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC32AS14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
auf Bestellung 2169 Stücke: Lieferzeit 14-21 Tag (e) |
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FMMT417TD | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Manufacturer standard package: 500pcs. |
Produkt ist nicht verfügbar |
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FMMT415TD | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Manufacturer standard package: 500pcs. |
Produkt ist nicht verfügbar |
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| AP22615BWU-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOT26 On-state resistance: 40mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX84C6V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 5827 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C6V2TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZX84C6V2Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C6V2S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Semiconductor structure: double independent Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZX84C6V2W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SDM2U40CSP-7B | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: X3-WLB1608-2 Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Capacitance: 85pF Max. forward voltage: 0.53V Leakage current: 0.15mA Max. forward impulse current: 28A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DFLS230LH-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Capacitance: 85pF Max. forward voltage: 0.45V Leakage current: 15mA Max. forward impulse current: 75A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SDT10A100CTFP | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.66V Max. off-state voltage: 0.1kV Load current: 5A x2 Max. load current: 10A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 50µA Case: TO220FP Type of diode: Schottky rectifying |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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SDT10A100CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.73V Max. off-state voltage: 0.1kV Load current: 5A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| PAM8904EJPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: driver Operating temperature: -40...150°C Voltage supply range: 1.5...5.5V DC Kind of package: reel; tape Case: UQFN12 Kind of integrated circuit: piezo sounder Number of channels: 1 Mounting: SMD |
Produkt ist nicht verfügbar |
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ZTX853 | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 130MHz Manufacturer standard package: 4000pcs. |
auf Bestellung 3436 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTX853STZ | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 130MHz |
Produkt ist nicht verfügbar |
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1SMB5943B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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LM2902AQS14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 1mV Kind of package: reel; tape Open-loop gain: 100dB |
Produkt ist nicht verfügbar |
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LM2902AQT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
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| LM2902AS14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
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LM2902AT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14 Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| LM2902QS14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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|
LM2902QT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| LM2902S14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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|
LM2902T14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 90A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 14.9nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DSS60601MZ4-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Mounting: SMD Manufacturer standard package: 2500pcs. Collector-emitter voltage: 60V Power dissipation: 1.2W Polarisation: bipolar Pulsed collector current: 12A Type of transistor: NPN Current gain: 50...360 Kind of package: reel; tape Case: SOT223 Frequency: 100MHz Collector current: 6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
MMBD2004SW-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT323; Ufmax: 1V Mounting: SMD Max. forward voltage: 1V Features of semiconductor devices: small signal Max. off-state voltage: 300V Load current: 0.225A Kind of package: reel; tape Semiconductor structure: double series Case: SOT323 Type of diode: switching Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AP22916BCA4-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; X1-WLB0808-4 Mounting: SMD Supply voltage: 1.3...5.5V DC Output current: 2A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: X1-WLB0808-4 Kind of integrated circuit: high-side Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AP22916CCA4-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape On-state resistance: 60mΩ Mounting: SMD Supply voltage: 1.3...3.5V DC Active logical level: high Output current: 2A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: U-WLB0808-4 Kind of integrated circuit: load switch Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
BC857BTQ-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
SMCJ14AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 64.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
3.0SMCJ14A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 15.6÷17.2V; 129.3A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 129.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP1055UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.215Ω
Pulsed drain current: -25A
Gate charge: 20.8nC
Drain current: -4A
Kind of channel: enhancement
Drain-source voltage: -12V
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.215Ω
Pulsed drain current: -25A
Gate charge: 20.8nC
Drain current: -4A
Kind of channel: enhancement
Drain-source voltage: -12V
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP2065UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.74W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.1Ω
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±12V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.74W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.1Ω
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2110UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DXTN5820DFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Frequency: 80MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Frequency: 80MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DXTN5840CFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 7A
Mounting: SMD
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 7A
Mounting: SMD
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DXTP5820CFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DXTN58100CFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 6A
Mounting: SMD
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 6A
Mounting: SMD
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN2053UFDB-7 |
|
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| DMP2090UFDB-7 |
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.21 EUR |
| DMP2165UW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 3.5nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 3.5nC
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 254+ | 0.33 EUR |
| 350+ | 0.24 EUR |
| 397+ | 0.21 EUR |
| 511+ | 0.17 EUR |
| DMN3016LFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 1.5 EUR |
| 2N7002T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002TQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTP08400BFFTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 138+ | 0.62 EUR |
| 198+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| ZTX696BSTZ |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 112+ | 0.76 EUR |
| 124+ | 0.69 EUR |
| 143+ | 0.6 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.52 EUR |
| BAS40BRW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FZT705TC |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FZT705TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FZT7053TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FZT705QTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D5V0L2B3SO-7 |
|
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 20pF
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 20pF
Kind of package: reel; tape
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.32 EUR |
| SMBJ10CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 188+ | 0.46 EUR |
| SMBJ100CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B160AE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B160AF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B160B-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
auf Bestellung 5525 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 202+ | 0.42 EUR |
| 239+ | 0.36 EUR |
| 250+ | 0.35 EUR |
| 264+ | 0.32 EUR |
| 3000+ | 0.3 EUR |
| B160S1F-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 404+ | 0.21 EUR |
| 455+ | 0.19 EUR |
| 680+ | 0.13 EUR |
| 893+ | 0.095 EUR |
| 1000+ | 0.088 EUR |
| 74LVC32AS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
auf Bestellung 2169 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 224+ | 0.38 EUR |
| 277+ | 0.31 EUR |
| 516+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| FMMT417TD |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FMMT415TD |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP22615BWU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C6V2-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 5827 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 770+ | 0.11 EUR |
| 1363+ | 0.062 EUR |
| 1985+ | 0.043 EUR |
| 2146+ | 0.039 EUR |
| 2243+ | 0.038 EUR |
| 3000+ | 0.036 EUR |
| BZX84C6V2TS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C6V2Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C6V2S-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C6V2W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDM2U40CSP-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DFLS230LH-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SDT10A100CTFP |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 50µA
Case: TO220FP
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 50µA
Case: TO220FP
Type of diode: Schottky rectifying
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 173+ | 0.49 EUR |
| 186+ | 0.46 EUR |
| 193+ | 0.44 EUR |
| SDT10A100CT |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.74 EUR |
| PAM8904EJPR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZTX853 |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Manufacturer standard package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Manufacturer standard package: 4000pcs.
auf Bestellung 3436 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 1.9 EUR |
| 71+ | 1.2 EUR |
| 84+ | 1.02 EUR |
| 106+ | 0.81 EUR |
| 500+ | 0.67 EUR |
| ZTX853STZ |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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| 1SMB5943B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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| LM2902AQS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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| LM2902AQT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902AS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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| LM2902QS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902QT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902S14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902T14-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| DMT35M4LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DSS60601MZ4-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 60V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 12A
Type of transistor: NPN
Current gain: 50...360
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 60V
Power dissipation: 1.2W
Polarisation: bipolar
Pulsed collector current: 12A
Type of transistor: NPN
Current gain: 50...360
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector current: 6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MMBD2004SW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT323; Ufmax: 1V
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 300V
Load current: 0.225A
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT323
Type of diode: switching
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.225A; 50ns; SOT323; Ufmax: 1V
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 300V
Load current: 0.225A
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT323
Type of diode: switching
Reverse recovery time: 50ns
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| AP22916BCA4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; X1-WLB0808-4
Mounting: SMD
Supply voltage: 1.3...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: X1-WLB0808-4
Kind of integrated circuit: high-side
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; X1-WLB0808-4
Mounting: SMD
Supply voltage: 1.3...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: X1-WLB0808-4
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| AP22916CCA4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape
On-state resistance: 60mΩ
Mounting: SMD
Supply voltage: 1.3...3.5V DC
Active logical level: high
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-WLB0808-4
Kind of integrated circuit: load switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape
On-state resistance: 60mΩ
Mounting: SMD
Supply voltage: 1.3...3.5V DC
Active logical level: high
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: U-WLB0808-4
Kind of integrated circuit: load switch
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BC857BTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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| SMCJ14AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 64.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 64.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 64.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 3.0SMCJ14A-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 15.6÷17.2V; 129.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 129.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 15.6÷17.2V; 129.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 129.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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