Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74703) > Seite 1232 nach 1246
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DT2042-04TS-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
Produkt ist nicht verfügbar |
||||||||||||
DMN3009SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
DMN3009SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
DMN3009SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
DMN3009SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 100A Power dissipation: 3.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2316 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
DMN3009SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 80A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
DMN10H099SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
Produkt ist nicht verfügbar |
||||||||||||
DMN10H099SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
Produkt ist nicht verfügbar |
||||||||||||
BZT52C3V9-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 3100 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
BZT52C3V9LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 3.9V; SMD; reel,tape; X1-DFN1006-2; 3uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode Leakage current: 3µA |
Produkt ist nicht verfügbar |
||||||||||||
BZT52C3V9S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
BZT52C3V9SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||
BZT52C3V9T-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
||||||||||||
FMMTA42TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.2A; 330mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 300V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.33W Polarisation: bipolar |
auf Bestellung 3920 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
FMMTA42QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.2A; 330mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Collector-emitter voltage: 300V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.33W Polarisation: bipolar |
Produkt ist nicht verfügbar |
||||||||||||
DGD2110S16-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
SBR10A45SP5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 10A; PowerDI®5 Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: PowerDI®5 Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 0.53V Leakage current: 0.4mA |
Produkt ist nicht verfügbar |
||||||||||||
SBR30A45CTBQ-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 30A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 30A Max. load current: 30A Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward impulse current: 175A Case: TO263 Max. forward voltage: 0.55V Leakage current: 260µA Technology: SBR® |
Produkt ist nicht verfügbar |
||||||||||||
SDT40A100VCT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Kind of package: tube Case: TO220AB Mounting: THT Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Max. off-state voltage: 100V Load current: 20A x2 Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
||||||||||||
SDT40A100CTFP | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; tube Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.72V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220FP Mounting: THT Max. forward impulse current: 180A Kind of package: tube |
Produkt ist nicht verfügbar |
||||||||||||
DMN80H2D0SCTI | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 28A Power dissipation: 16W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 35.4nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
AP64502QSP-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; 85% Frequency: 100kHz...2.2MHz Operating temperature: -40...125°C Output current: 5A Output voltage: 0.8...40V DC Type of integrated circuit: PMIC Application: automotive industry Input voltage: 3.8...40V DC Efficiency: 85% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: SO8-EP |
Produkt ist nicht verfügbar |
||||||||||||
AP64502SP-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; 85% Frequency: 100kHz...2.2MHz Operating temperature: -40...125°C Output current: 5A Output voltage: 0.8...40V DC Type of integrated circuit: PMIC Input voltage: 3.8...40V DC Efficiency: 85% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: SO8-EP |
Produkt ist nicht verfügbar |
||||||||||||
AL8823S-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
AL8843SP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 1998 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
AL8860MP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 2469 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
AL8860QMP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
AL8861QMP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
AL8861WT-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
AL8862QSP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
AP63205QWU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 5VDC; 2A; TSOT26 Case: TSOT26 Mounting: SMD Kind of package: reel; tape Frequency: 1.1MHz Output current: 2A Operating temperature: -40...85°C Application: automotive industry Efficiency: 93% Topology: buck Input voltage: 3.8...32V DC Kind of integrated circuit: DC/DC converter Output voltage: 5V DC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
||||||||||||
GBU606 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
SBRT20U60SP5-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
||||||||||||
SBRT20U60SP5-7D | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
||||||||||||
AP3441LSHE-7B | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...5.5V DC Output voltage: 0.6...5.5V DC Output current: 3A Case: U-DFN2020-8 Type E Mounting: SMD Frequency: 0.8...1.2MHz Topology: buck Operating temperature: -40...85°C Duty cycle factor: 0...100% |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
AP3441SHE-7B | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...5.5V DC Output voltage: 0.6...5.5V DC Output current: 3A Case: U-DFN2020-8 Type E Mounting: SMD Frequency: 0.8...1.2MHz Topology: buck Operating temperature: -40...85°C Duty cycle factor: 0...100% |
Produkt ist nicht verfügbar |
||||||||||||
DXTP5820CFDB-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3 Kind of package: reel; tape Collector-emitter voltage: 20V Collector current: 6A Pulsed collector current: 8A Type of transistor: PNP Power dissipation: 0.69W Polarisation: bipolar Mounting: SMD Case: U-DFN2020-3 Frequency: 140MHz |
Produkt ist nicht verfügbar |
||||||||||||
AL3353S-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
||||||||||||
74LVC540AT20-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LVC Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 1339 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
SMAJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
DMN65D8LDW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
DMN65D8LDWQ-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
74LVCE1G00SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
||||||||||||
74LVCE1G00W5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
||||||||||||
74LVCE1G02SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE Operating temperature: -40...150°C Mounting: SMD Kind of package: reel; tape Kind of gate: NOR Technology: CMOS; TTL Family: LVCE Case: SOT353 Number of inputs: 2 Supply voltage: 1.4...5.5V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: totem pole |
Produkt ist nicht verfügbar |
||||||||||||
74LVCE1G06W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Family: LVCE |
Produkt ist nicht verfügbar |
||||||||||||
74LVCE1G08SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
||||||||||||
74LVCE1G08W5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
||||||||||||
fmmt717 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||
SMBJ48A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 4360 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
AP22816AKCWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22816AKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22816BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22816BKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22817AKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22817AKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22818AKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22818AKCWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22818AKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
||||||||||||
AP22818AKWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
DT2042-04TS-7 |
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMN3009SFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3009SFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3009SFGQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3009SK3-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 3.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 3.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2316 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
159+ | 0.45 EUR |
177+ | 0.41 EUR |
229+ | 0.31 EUR |
243+ | 0.3 EUR |
DMN3009SSS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN10H099SFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Produkt ist nicht verfügbar
DMN10H099SFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Produkt ist nicht verfügbar
BZT52C3V9-7-F |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1425+ | 0.05 EUR |
2125+ | 0.034 EUR |
2650+ | 0.027 EUR |
3050+ | 0.024 EUR |
3100+ | 0.023 EUR |
BZT52C3V9LP-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.9V; SMD; reel,tape; X1-DFN1006-2; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.9V; SMD; reel,tape; X1-DFN1006-2; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Leakage current: 3µA
Produkt ist nicht verfügbar
BZT52C3V9S-7-F |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
420+ | 0.17 EUR |
BZT52C3V9SQ-7-F |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
BZT52C3V9T-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
FMMTA42TA |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 330mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 330mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
auf Bestellung 3920 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
960+ | 0.075 EUR |
1060+ | 0.068 EUR |
1420+ | 0.051 EUR |
1480+ | 0.048 EUR |
FMMTA42QTA |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 330mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 330mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Produkt ist nicht verfügbar
DGD2110S16-13 |
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
SBR10A45SP5-13 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 10A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.53V
Leakage current: 0.4mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 10A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.53V
Leakage current: 0.4mA
Produkt ist nicht verfügbar
SBR30A45CTBQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 30A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Max. load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 175A
Case: TO263
Max. forward voltage: 0.55V
Leakage current: 260µA
Technology: SBR®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 30A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Max. load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 175A
Case: TO263
Max. forward voltage: 0.55V
Leakage current: 260µA
Technology: SBR®
Produkt ist nicht verfügbar
SDT40A100VCT |
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Kind of package: tube
Case: TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 20A x2
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Kind of package: tube
Case: TO220AB
Mounting: THT
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 20A x2
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
SDT40A100CTFP |
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Max. forward impulse current: 180A
Kind of package: tube
Produkt ist nicht verfügbar
DMN80H2D0SCTI |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 28A
Power dissipation: 16W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 35.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 28A
Power dissipation: 16W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 35.4nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
AP64502QSP-13 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; 85%
Frequency: 100kHz...2.2MHz
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 3.8...40V DC
Efficiency: 85%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SO8-EP
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; 85%
Frequency: 100kHz...2.2MHz
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 3.8...40V DC
Efficiency: 85%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SO8-EP
Produkt ist nicht verfügbar
AP64502SP-13 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; 85%
Frequency: 100kHz...2.2MHz
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Type of integrated circuit: PMIC
Input voltage: 3.8...40V DC
Efficiency: 85%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SO8-EP
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; 85%
Frequency: 100kHz...2.2MHz
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Type of integrated circuit: PMIC
Input voltage: 3.8...40V DC
Efficiency: 85%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SO8-EP
Produkt ist nicht verfügbar
AL8823S-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL8843SP-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1998 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
100+ | 0.72 EUR |
110+ | 0.65 EUR |
136+ | 0.53 EUR |
144+ | 0.5 EUR |
AL8860MP-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2469 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.93 EUR |
118+ | 0.61 EUR |
132+ | 0.54 EUR |
172+ | 0.42 EUR |
182+ | 0.39 EUR |
AL8860QMP-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL8861QMP-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL8861WT-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL8862QSP-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AP63205QWU-7 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 5VDC; 2A; TSOT26
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.1MHz
Output current: 2A
Operating temperature: -40...85°C
Application: automotive industry
Efficiency: 93%
Topology: buck
Input voltage: 3.8...32V DC
Kind of integrated circuit: DC/DC converter
Output voltage: 5V DC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 5VDC; 2A; TSOT26
Case: TSOT26
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.1MHz
Output current: 2A
Operating temperature: -40...85°C
Application: automotive industry
Efficiency: 93%
Topology: buck
Input voltage: 3.8...32V DC
Kind of integrated circuit: DC/DC converter
Output voltage: 5V DC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
GBU606 |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
70+ | 1.02 EUR |
71+ | 1 EUR |
SBRT20U60SP5-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
SBRT20U60SP5-7D |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
AP3441LSHE-7B |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.25 EUR |
320+ | 0.22 EUR |
405+ | 0.18 EUR |
425+ | 0.17 EUR |
AP3441SHE-7B |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: U-DFN2020-8 Type E
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Produkt ist nicht verfügbar
DXTP5820CFDB-7 |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Kind of package: reel; tape
Collector-emitter voltage: 20V
Collector current: 6A
Pulsed collector current: 8A
Type of transistor: PNP
Power dissipation: 0.69W
Polarisation: bipolar
Mounting: SMD
Case: U-DFN2020-3
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Kind of package: reel; tape
Collector-emitter voltage: 20V
Collector current: 6A
Pulsed collector current: 8A
Type of transistor: PNP
Power dissipation: 0.69W
Polarisation: bipolar
Mounting: SMD
Case: U-DFN2020-3
Frequency: 140MHz
Produkt ist nicht verfügbar
AL3353S-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
74LVC540AT20-13 |
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVC
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1339 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
274+ | 0.26 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
353+ | 0.2 EUR |
SMAJ75A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
285+ | 0.25 EUR |
365+ | 0.2 EUR |
DMN65D8LDW-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN65D8LDWQ-7 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
74LVCE1G00SE-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G00W5-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G02SE-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS; TTL
Family: LVCE
Case: SOT353
Number of inputs: 2
Supply voltage: 1.4...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: totem pole
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS; TTL
Family: LVCE
Case: SOT353
Number of inputs: 2
Supply voltage: 1.4...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: totem pole
Produkt ist nicht verfügbar
74LVCE1G06W5-7 |
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: LVCE
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G08SE-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G08W5-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
fmmt717 |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
SMBJ48A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.25 EUR |
500+ | 0.14 EUR |
565+ | 0.13 EUR |
625+ | 0.11 EUR |
AP22816AKCWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22816AKEWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22816BKBWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22816BKEWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22817AKBWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22817AKEWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKBWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKCWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKEWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKWT-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar