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SMAJ110CA-13-F SMAJ110CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA DIODES INCORPORATED ZXT12N50DX.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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FZT851TA FZT851TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55BF3D092E749&compId=FZT851.pdf?ci_sign=d516316d8afde0c6291d4ed6f83b381fdd99975f description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 1797 Stücke:
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72+1 EUR
96+0.75 EUR
121+0.59 EUR
164+0.44 EUR
191+0.37 EUR
1000+0.33 EUR
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FZT853TA FZT853TA DIODES INCORPORATED FZT853.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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103+0.7 EUR
109+0.66 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
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FZT649TA FZT649TA DIODES INCORPORATED FZT649.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...240MHz
Pulsed collector current: 8A
Current gain: 15...300
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250+0.35 EUR
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FZT491TA FZT491TA DIODES INCORPORATED FZT491.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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FZT689BTA FZT689BTA DIODES INCORPORATED FZT689B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
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FZT491ATA FZT491ATA DIODES INCORPORATED FZT491A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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109+0.66 EUR
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FZT694BTA FZT694BTA DIODES INCORPORATED FZT694B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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85+0.84 EUR
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FZT688BTA FZT688BTA DIODES INCORPORATED FZT688.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
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FZT692BTA FZT692BTA DIODES INCORPORATED FZT692B.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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108+0.67 EUR
120+0.6 EUR
250+0.52 EUR
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DPO2039DABQ-13 DIODES INCORPORATED DPO2039DABQ.pdf Category: Integrated circuits - others
Description: IC: power switch; U-QFN3030-16; reel,tape; 2.7÷5.5VDC
Supply voltage: 2.7...5.5V DC
Protection: anti-overvoltage OVP
Case: U-QFN3030-16
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Application: USB port ESD protection
Output current: 0.6A
Number of channels: 4
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SMBJ43A-13-F SMBJ43A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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74LVC2G07FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB27700D3&compId=74LVC2G07.pdf?ci_sign=23197b584940eec3d9368591366361111cafb117 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA120D3&compId=74LVC2G07.pdf?ci_sign=5155758af5633312cfec558e7be0db6fb82a0b48 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X1-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FX4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA220D3&compId=74LVC2G07.pdf?ci_sign=70be2d5cfc1c205eb4a3bd4b1ce4248747e98641 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871960D3&compId=74LVC2G07.pdf?ci_sign=0f7bb9eaf40fba2451f8b49263009f6eaa6fd347 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMT68M8LFV-7 DIODES INCORPORATED DMT68M8LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Pulsed drain current: 210A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 13.3mΩ
Power dissipation: 2.7W
Drain current: 43.3A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMT68M8LPS-13 DIODES INCORPORATED DMT68M8LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 270A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 10.8mΩ
Power dissipation: 2.4W
Drain current: 11.2A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DMT68M8LSS-13 DMT68M8LSS-13 DIODES INCORPORATED DMT68M8LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Gate charge: 31.8nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
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DDZ5V6BS-7 DIODES INCORPORATED ds30414.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZX5V6B-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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ZXMP6A17GTA ZXMP6A17GTA DIODES INCORPORATED ZXMP6A17G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -13.7A
auf Bestellung 302 Stücke:
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120+0.6 EUR
157+0.46 EUR
176+0.41 EUR
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ZXMP6A18KTC ZXMP6A18KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2E501A9AD98BF&compId=ZXMP6A18K.pdf?ci_sign=9ce587467aac6cf0c48ed137b5a8436941ac98ce Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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91+0.79 EUR
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ZXMP6A13FQTA ZXMP6A13FQTA DIODES INCORPORATED ZXMP6A13FQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.9A; Idm: -4A; 0.806W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -900mA
Power dissipation: 0.806W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -4A
Gate charge: 2.9nC
Application: automotive industry
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ZXMP6A17E6QTA ZXMP6A17E6QTA DIODES INCORPORATED ZXMP6A17E6Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.92W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: -13.6A
Gate charge: 17.7nC
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ZXMP6A16KTC ZXMP6A16KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2C4370D4C58BF&compId=ZXMP6A16K.pdf?ci_sign=a2f2b443ef393aba7e6ad7cb988c058d9b768e12 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1917 Stücke:
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56+1.29 EUR
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93+0.78 EUR
112+0.64 EUR
225+0.56 EUR
500+0.5 EUR
1000+0.44 EUR
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ZXMP6A17GQTA ZXMP6A17GQTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2DA472AF5F8BF&compId=ZXMP6A17GQ.pdf?ci_sign=80e9c9a1e273f2f43a428c1da77223fe5ae6fd37 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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139+0.51 EUR
179+0.4 EUR
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ZXMP6A18DN8TA ZXMP6A18DN8TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EDADAA770140143&compId=ZXMP6A18DN8.pdf?ci_sign=dfbe70487ac575f0dff5a5775629a2cf50ce002d Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMP6A13FTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDF88FE6164A47380D6&compId=ZXMP6A13FTA.pdf?ci_sign=c325c8cb1817ed3eb87c37f60ee1736ecd744fa7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.9A; Idm: -4A; 0.806W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -900mA
Power dissipation: 0.806W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -4A
Gate charge: 2.9nC
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ZXMP6A17DN8QTC DIODES INCORPORATED ZXMP6A17DN8.pdf Category: Multi channel transistors
Description: ZXMP6A17DN8QTC
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ZXMP6A18DN8QTC DIODES INCORPORATED Category: Multi channel transistors
Description: ZXMP6A18DN8QTC
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AH49FDNTR-G1 DIODES INCORPORATED AH49F.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
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SBR10U150CT DIODES INCORPORATED SBR10U150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 5Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AB
Max. load current: 10A
Technology: SBR®
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SBR10U150CTFP DIODES INCORPORATED SBR10U150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 5Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: ITO220AB
Max. load current: 10A
Technology: SBR®
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DMG1013TQ-7 DMG1013TQ-7 DIODES INCORPORATED DMG1013TQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Drain current: -0.33A
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Kind of package: 7 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
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DMG1013UWQ-13 DMG1013UWQ-13 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Drain current: -540mA
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Kind of package: 13 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
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DMN2600UFB-7 DIODES INCORPORATED ds31983.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3730UFB-7 DIODES INCORPORATED DMN3730UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X1-DFN1006-3
Kind of package: 7 inch reel; tape
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DMN3730UFB4-7B DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
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DMN3731UFB4-7B DIODES INCORPORATED DMN3731UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.5nC
On-state resistance: 0.73Ω
Power dissipation: 970mW
Drain current: 0.9A
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
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DMN3731U-7 DMN3731U-7 DIODES INCORPORATED DMN3731U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.5nC
On-state resistance: 0.73Ω
Power dissipation: 0.58W
Drain current: 0.7A
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: SOT23
Kind of package: 7 inch reel; tape
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DMN3731U-13 DMN3731U-13 DIODES INCORPORATED DMN3731U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.5nC
On-state resistance: 0.73Ω
Power dissipation: 0.58W
Drain current: 0.7A
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: SOT23
Kind of package: 13 inch reel; tape
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BAT54SDWQ-7-F DIODES INCORPORATED BAT54SDWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
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P4SMAJ6.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMP6050SSD-13 DMP6050SSD-13 DIODES INCORPORATED DMP6050SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMPH6050SK3-13 DMPH6050SK3-13 DIODES INCORPORATED DMPH6050SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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BZT52C3V3Q-7-F BZT52C3V3Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C3V3TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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SMAZ16-13-F SMAZ16-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 63mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Zener current: 63mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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DFLZ16-7 DIODES INCORPORATED DFLZ5V1-DFLZ39.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
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524+0.14 EUR
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SMCJ16A-13-F SMCJ16A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTA123YCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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ZHCS500TA ZHCS500TA DIODES INCORPORATED ZHCS500.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
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ZHCS500QTA ZHCS500QTA DIODES INCORPORATED ZHCS500.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.05V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
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ZHCS506TA ZHCS506TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EED10F04D282143&compId=ZHCS506.pdf?ci_sign=8abc08895866669640f2698cd2caa2c866340fdd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 0.63V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
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ZHCS506QTA ZHCS506QTA DIODES INCORPORATED ZHCS506Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.35V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
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BAV23A-7-F BAV23A-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC642B2EBD18FA8&compId=BAV23-7-F-DTE.pdf?ci_sign=897279088b5dedd59bee8f92cd4b8e27ea025500 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. load current: 0.625A
Features of semiconductor devices: small signal
Capacitance: 5pF
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BAV23CQ-7-F BAV23CQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
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SMAJ110CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ110CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA ZXT12N50DX.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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FZT851TA description pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55BF3D092E749&compId=FZT851.pdf?ci_sign=d516316d8afde0c6291d4ed6f83b381fdd99975f
FZT851TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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72+1 EUR
96+0.75 EUR
121+0.59 EUR
164+0.44 EUR
191+0.37 EUR
1000+0.33 EUR
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FZT853TA FZT853.pdf
FZT853TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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109+0.66 EUR
117+0.62 EUR
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FZT649TA FZT649.pdf
FZT649TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...240MHz
Pulsed collector current: 8A
Current gain: 15...300
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72+1 EUR
120+0.6 EUR
180+0.4 EUR
250+0.35 EUR
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FZT491TA FZT491.pdf
FZT491TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
108+0.67 EUR
173+0.41 EUR
500+0.37 EUR
Mindestbestellmenge: 72
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FZT689BTA FZT689B.pdf
FZT689BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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FZT491ATA FZT491A.pdf
FZT491ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
109+0.66 EUR
138+0.51 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
FZT694BTA FZT694B.pdf
FZT694BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
85+0.84 EUR
127+0.56 EUR
Mindestbestellmenge: 54
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FZT688BTA FZT688.pdf
FZT688BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
98+0.73 EUR
150+0.48 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
FZT692BTA description FZT692B.pdf
FZT692BTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
83+0.87 EUR
108+0.67 EUR
120+0.6 EUR
250+0.52 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DPO2039DABQ-13 DPO2039DABQ.pdf
Hersteller: DIODES INCORPORATED
Category: Integrated circuits - others
Description: IC: power switch; U-QFN3030-16; reel,tape; 2.7÷5.5VDC
Supply voltage: 2.7...5.5V DC
Protection: anti-overvoltage OVP
Case: U-QFN3030-16
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Application: USB port ESD protection
Output current: 0.6A
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ43A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ43A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G07FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB27700D3&compId=74LVC2G07.pdf?ci_sign=23197b584940eec3d9368591366361111cafb117
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G07FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA120D3&compId=74LVC2G07.pdf?ci_sign=5155758af5633312cfec558e7be0db6fb82a0b48
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X1-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G07FX4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA220D3&compId=74LVC2G07.pdf?ci_sign=70be2d5cfc1c205eb4a3bd4b1ce4248747e98641
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC2G07FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871960D3&compId=74LVC2G07.pdf?ci_sign=0f7bb9eaf40fba2451f8b49263009f6eaa6fd347
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT68M8LFV-7 DMT68M8LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Pulsed drain current: 210A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 13.3mΩ
Power dissipation: 2.7W
Drain current: 43.3A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT68M8LPS-13 DMT68M8LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 270A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 10.8mΩ
Power dissipation: 2.4W
Drain current: 11.2A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT68M8LSS-13 DMT68M8LSS.pdf
DMT68M8LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Gate charge: 31.8nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDZ5V6BS-7 ds30414.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDZX5V6B-7 ds30408.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GTA ZXMP6A17G.pdf
ZXMP6A17GTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -13.7A
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
120+0.6 EUR
157+0.46 EUR
176+0.41 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A18KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2E501A9AD98BF&compId=ZXMP6A18K.pdf?ci_sign=9ce587467aac6cf0c48ed137b5a8436941ac98ce
ZXMP6A18KTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
78+0.92 EUR
87+0.83 EUR
91+0.79 EUR
100+0.73 EUR
500+0.68 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A13FQTA ZXMP6A13FQ.pdf
ZXMP6A13FQTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.9A; Idm: -4A; 0.806W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -900mA
Power dissipation: 0.806W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -4A
Gate charge: 2.9nC
Application: automotive industry
auf Bestellung 1878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
258+0.28 EUR
291+0.25 EUR
295+0.24 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17E6QTA ZXMP6A17E6Q.pdf
ZXMP6A17E6QTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.92W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: -13.6A
Gate charge: 17.7nC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
136+0.53 EUR
185+0.39 EUR
500+0.38 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A16KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2C4370D4C58BF&compId=ZXMP6A16K.pdf?ci_sign=a2f2b443ef393aba7e6ad7cb988c058d9b768e12
ZXMP6A16KTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1917 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
82+0.88 EUR
93+0.78 EUR
112+0.64 EUR
225+0.56 EUR
500+0.5 EUR
1000+0.44 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GQTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2DA472AF5F8BF&compId=ZXMP6A17GQ.pdf?ci_sign=80e9c9a1e273f2f43a428c1da77223fe5ae6fd37
ZXMP6A17GQTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
139+0.51 EUR
179+0.4 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A18DN8TA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EDADAA770140143&compId=ZXMP6A18DN8.pdf?ci_sign=dfbe70487ac575f0dff5a5775629a2cf50ce002d
ZXMP6A18DN8TA
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.8A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A13FTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF88FE6164A47380D6&compId=ZXMP6A13FTA.pdf?ci_sign=c325c8cb1817ed3eb87c37f60ee1736ecd744fa7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.9A; Idm: -4A; 0.806W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -900mA
Power dissipation: 0.806W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -4A
Gate charge: 2.9nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17DN8QTC ZXMP6A17DN8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: ZXMP6A17DN8QTC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.61 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A18DN8QTC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: ZXMP6A18DN8QTC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.84 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
AH49FDNTR-G1 AH49F.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SBR10U150CT SBR10U150.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 5Ax2; tube; Ifsm: 150A; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AB
Max. load current: 10A
Technology: SBR®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBR10U150CTFP SBR10U150.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 5Ax2; tube; Ifsm: 150A; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: ITO220AB
Max. load current: 10A
Technology: SBR®
Produkt ist nicht verfügbar
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DMG1013TQ-7 DMG1013TQ.pdf
DMG1013TQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Drain current: -0.33A
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Kind of package: 7 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Produkt ist nicht verfügbar
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DMG1013UWQ-13 DMG1013UWQ.pdf
DMG1013UWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Drain current: -540mA
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Kind of package: 13 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
Produkt ist nicht verfügbar
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DMN2600UFB-7 ds31983.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3730UFB-7 DMN3730UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X1-DFN1006-3
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMN3730UFB4-7B
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMN3731UFB4-7B DMN3731UFB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.5nC
On-state resistance: 0.73Ω
Power dissipation: 970mW
Drain current: 0.9A
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMN3731U-7 DMN3731U.pdf
DMN3731U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.5nC
On-state resistance: 0.73Ω
Power dissipation: 0.58W
Drain current: 0.7A
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: SOT23
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMN3731U-13 DMN3731U.pdf
DMN3731U-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.5nC
On-state resistance: 0.73Ω
Power dissipation: 0.58W
Drain current: 0.7A
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: SOT23
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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BAT54SDWQ-7-F BAT54SDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
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P4SMAJ6.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMP6050SSD-13 DMP6050SSD.pdf
DMP6050SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
113+0.64 EUR
129+0.55 EUR
158+0.45 EUR
250+0.41 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6050SK3-13 DMPH6050SK3.pdf
DMPH6050SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
107+0.67 EUR
146+0.49 EUR
165+0.43 EUR
250+0.37 EUR
500+0.34 EUR
Mindestbestellmenge: 77
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BZT52C3V3Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C3V3Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C3V3TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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SMAZ16-13-F pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64
SMAZ16-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 63mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Zener current: 63mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
550+0.13 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 500
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DFLZ16-7 DFLZ5V1-DFLZ39.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
376+0.19 EUR
516+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BCW68HTA BCW68H.pdf
BCW68HTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
auf Bestellung 5037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
285+0.25 EUR
323+0.22 EUR
524+0.14 EUR
712+0.1 EUR
1000+0.09 EUR
3000+0.081 EUR
Mindestbestellmenge: 239
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SMCJ16A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ16A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DDTA123YCA-7-F ds30334.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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ZHCS500TA ZHCS500.pdf
ZHCS500TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZHCS500QTA ZHCS500.pdf
ZHCS500QTA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.05V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
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ZHCS506TA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EED10F04D282143&compId=ZHCS506.pdf?ci_sign=8abc08895866669640f2698cd2caa2c866340fdd
ZHCS506TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 0.63V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
202+0.35 EUR
307+0.23 EUR
321+0.22 EUR
Mindestbestellmenge: 117
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ZHCS506QTA ZHCS506Q.pdf
ZHCS506QTA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.35V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
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BAV23A-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC642B2EBD18FA8&compId=BAV23-7-F-DTE.pdf?ci_sign=897279088b5dedd59bee8f92cd4b8e27ea025500
BAV23A-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. load current: 0.625A
Features of semiconductor devices: small signal
Capacitance: 5pF
auf Bestellung 2763 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
556+0.13 EUR
687+0.1 EUR
764+0.094 EUR
979+0.073 EUR
1097+0.065 EUR
Mindestbestellmenge: 417
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BAV23CQ-7-F BAV23A_C_S.pdf
BAV23CQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1240+0.058 EUR
1400+0.051 EUR
Mindestbestellmenge: 1240
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