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DMTH8001STLW-13 DIODES INCORPORATED DMTH8001STLW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1080A; 6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.08kA
Power dissipation: 6W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8001STLWQ-13 DIODES INCORPORATED DMTH8001STLWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 250W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8003SPS-13 DIODES INCORPORATED DMTH8003SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 85A; Idm: 480A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 85A
Pulsed drain current: 480A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 124.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8004LPS-13 DIODES INCORPORATED DMTH8004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8008LFGQ-13 DIODES INCORPORATED DMTH8008LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 280A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMTH8008LPS-13 DIODES INCORPORATED DMTH8008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8008LPSQ-13 DIODES INCORPORATED DMTH8008LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMTH8008SPSQ-13 DIODES INCORPORATED DMTH8008SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Pulsed drain current: 360A
Power dissipation: 3.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMTH8008LFG-7 DIODES INCORPORATED DMTH8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.84 EUR
Mindestbestellmenge: 2000
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DMTH8008SFGQ-7 DIODES INCORPORATED DMTH8008SFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
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2000+0.96 EUR
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DMTH8008SPS-13 DIODES INCORPORATED DMTH8008SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
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2500+0.61 EUR
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AP2205-W5-7 AP2205-W5-7 DIODES INCORPORATED AP2205.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷24V; 0.25A
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3...24V
auf Bestellung 3000 Stücke:
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264+0.27 EUR
321+0.22 EUR
368+0.19 EUR
432+0.17 EUR
521+0.14 EUR
625+0.11 EUR
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AP2205-33W5-7 AP2205-33W5-7 DIODES INCORPORATED AP2205.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3V
auf Bestellung 2415 Stücke:
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162+0.44 EUR
200+0.36 EUR
226+0.32 EUR
264+0.27 EUR
293+0.24 EUR
319+0.22 EUR
506+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 162
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AP22811BW5-7 AP22811BW5-7 DIODES INCORPORATED AP22811.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
auf Bestellung 1877 Stücke:
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173+0.41 EUR
207+0.35 EUR
233+0.31 EUR
269+0.27 EUR
371+0.19 EUR
391+0.18 EUR
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AP22652AW6-7 AP22652AW6-7 DIODES INCORPORATED AP22652_AP22653_AP22652A_AP22653A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 65mΩ
Active logical level: low
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
240+0.3 EUR
281+0.25 EUR
313+0.23 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 173
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AP22811AW5-7 AP22811AW5-7 DIODES INCORPORATED AP22811.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
auf Bestellung 2983 Stücke:
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173+0.41 EUR
209+0.34 EUR
235+0.3 EUR
274+0.26 EUR
385+0.19 EUR
407+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 173
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AP22815AWT-7 AP22815AWT-7 DIODES INCORPORATED AP22815-615.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
On-state resistance: 40mΩ
Number of channels: 1
Output current: 3A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
105+0.69 EUR
117+0.61 EUR
135+0.53 EUR
137+0.52 EUR
142+0.5 EUR
Mindestbestellmenge: 87
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AP22814AW5-7 AP22814AW5-7 DIODES INCORPORATED AP22804_14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: SOT25
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 3A
Supply voltage: 2.7...5.5V DC
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
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AP22913W6-7 AP22913W6-7 DIODES INCORPORATED AP22913.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
202+0.35 EUR
228+0.31 EUR
266+0.27 EUR
385+0.19 EUR
407+0.18 EUR
Mindestbestellmenge: 167
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SMBJ150A-13-F SMBJ150A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 875 Stücke:
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228+0.31 EUR
285+0.25 EUR
334+0.21 EUR
421+0.17 EUR
582+0.12 EUR
658+0.11 EUR
705+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 228
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DMNH45M7SCT DMNH45M7SCT DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 64 Stücke:
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28+2.57 EUR
59+1.23 EUR
62+1.16 EUR
Mindestbestellmenge: 28
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DMT6018LDR-13 DIODES INCORPORATED DMT6018LDR.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
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DMT6018LDR-7 DIODES INCORPORATED DMT6018LDR.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
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ZTX1149A DIODES INCORPORATED ZTX1149A.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 135MHz
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BAT54W-7-F BAT54W-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54W-13-F BAT54W-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54WQ-7-F BAT54WQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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SDMP0340LST-7-F SDMP0340LST-7-F DIODES INCORPORATED ds30266.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 30mA; reel,tape; 150mW
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.15W
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2DB1713-13 DIODES INCORPORATED 2DB1713.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 3A; 2W; SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 3A
Kind of package: reel; tape
Pulsed collector current: 6A
Collector-emitter voltage: 12V
Type of transistor: PNP
Current gain: 270...680
Quantity in set/package: 2500pcs.
Polarisation: bipolar
Frequency: 180MHz
Case: SOT89
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BC846BWQ-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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P6SMAJ60ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ20ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ54ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ64ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ70ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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P6SMAJ75ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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P6SMAJ75ADFQ-13 DIODES INCORPORATED P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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P6SMAJ85ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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DMTH6016LSD-13 DMTH6016LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA9455E6A58BF&compId=DMTH6016LSD.pdf?ci_sign=3926830cab1121f302ab6525339bab48bcec11f8 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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B530CQ-13-F DIODES INCORPORATED B520CQ-B560CQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 300pF
Application: automotive industry
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
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TLV271CW5-7
+1
 		TLV271CW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF6A8738CC6746&compId=TLV27x.pdf?ci_sign=c8e3758d81c13254976ddb4989fadd03b45f1505 Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: 0...70°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
auf Bestellung 1636 Stücke:
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256+0.28 EUR
285+0.25 EUR
327+0.22 EUR
397+0.18 EUR
428+0.17 EUR
439+0.16 EUR
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TLV271IW5-7 TLV271IW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF6A8738CC6746&compId=TLV27x.pdf?ci_sign=c8e3758d81c13254976ddb4989fadd03b45f1505 Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: -40...125°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
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SMAJ40A-13-F SMAJ40A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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250+0.29 EUR
305+0.23 EUR
355+0.2 EUR
610+0.12 EUR
893+0.08 EUR
944+0.076 EUR
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SMAJ40AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BZX84C2V4-7-F BZX84C2V4-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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556+0.13 EUR
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2337+0.031 EUR
3402+0.021 EUR
3460+0.02 EUR
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BZX84C2V4Q-7-F BZX84C2V4Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C2V4S-7-F BZX84C2V4S-7-F DIODES INCORPORATED ds30108.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C2V4TS-7-F BZX84C2V4TS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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BZX84C2V4T-7-F BZX84C2V4T-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED55B8547B42A18&compId=BZX84CxxT_SER.pdf?ci_sign=651b14972163ebab9dde6b57178e9cc7352e90e9 Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.4V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C2V4W-7-F BZX84C2V4W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84C2V4Q-13-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
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S1D-13-F S1D-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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455+0.16 EUR
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575+0.12 EUR
842+0.085 EUR
1632+0.044 EUR
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RS1D-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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S1A-13-F S1A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 1.8µs
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Type of diode: rectifying
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500+0.14 EUR
603+0.12 EUR
975+0.073 EUR
1334+0.054 EUR
2263+0.032 EUR
2393+0.03 EUR
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S3A-13-F S3A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9EBFD5F4E2A180D3&compId=S3x_S3xB.pdf?ci_sign=ccafe98c8bffbf380df095241579390f889c4e23 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Load current: 3A
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: rectifying
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281+0.25 EUR
382+0.19 EUR
404+0.18 EUR
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AP7343D-15FS4-7B DIODES INCORPORATED AP7343.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; X2DFN4; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.39V
Number of channels: 1
Tolerance: ±1%
Kind of package: reel; tape
Output voltage: 1.5V
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
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SMAJ48A-13-F SMAJ48A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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295+0.24 EUR
334+0.21 EUR
384+0.19 EUR
531+0.13 EUR
933+0.077 EUR
987+0.073 EUR
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SMAJ48AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Diodes - Unclassified
Description: SMAJ48AQ-13-F
auf Bestellung 5000 Stücke:
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5000+0.13 EUR
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SMAJ43CA-13-F SMAJ43CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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283+0.25 EUR
511+0.14 EUR
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AP8803WTG-7 AP8803WTG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE988DF3FB10D2538BF&compId=AP8803.pdf?ci_sign=add08831be99a7afe663f66186a00d1561e69ef8 Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Integrated circuit features: linear dimming; PWM
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72+1 EUR
100+0.97 EUR
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DMTH8001STLW-13 DMTH8001STLW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1080A; 6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.08kA
Power dissipation: 6W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8001STLWQ-13 DMTH8001STLWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 250W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8003SPS-13 DMTH8003SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 85A; Idm: 480A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 85A
Pulsed drain current: 480A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 124.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8004LPS-13 DMTH8004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8008LFGQ-13 DMTH8008LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 280A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMTH8008LPS-13 DMTH8008LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH8008LPSQ-13 DMTH8008LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH8008SPSQ-13 DMTH8008SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Pulsed drain current: 360A
Power dissipation: 3.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMTH8008LFG-7 DMTH8008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.84 EUR
Mindestbestellmenge: 2000
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DMTH8008SFGQ-7 DMTH8008SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.96 EUR
Mindestbestellmenge: 2000
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DMTH8008SPS-13 DMTH8008SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.61 EUR
Mindestbestellmenge: 2500
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AP2205-W5-7 AP2205.pdf
AP2205-W5-7
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷24V; 0.25A
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3...24V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
321+0.22 EUR
368+0.19 EUR
432+0.17 EUR
521+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 264
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AP2205-33W5-7 AP2205.pdf
AP2205-33W5-7
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3V
auf Bestellung 2415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
200+0.36 EUR
226+0.32 EUR
264+0.27 EUR
293+0.24 EUR
319+0.22 EUR
506+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 162
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AP22811BW5-7 AP22811.pdf
AP22811BW5-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
auf Bestellung 1877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
207+0.35 EUR
233+0.31 EUR
269+0.27 EUR
371+0.19 EUR
391+0.18 EUR
Mindestbestellmenge: 173
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AP22652AW6-7 AP22652_AP22653_AP22652A_AP22653A.pdf
AP22652AW6-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 65mΩ
Active logical level: low
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
240+0.3 EUR
281+0.25 EUR
313+0.23 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 173
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AP22811AW5-7 AP22811.pdf
AP22811AW5-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
auf Bestellung 2983 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
235+0.3 EUR
274+0.26 EUR
385+0.19 EUR
407+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 173
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AP22815AWT-7 AP22815-615.pdf
AP22815AWT-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
On-state resistance: 40mΩ
Number of channels: 1
Output current: 3A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
105+0.69 EUR
117+0.61 EUR
135+0.53 EUR
137+0.52 EUR
142+0.5 EUR
Mindestbestellmenge: 87
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AP22814AW5-7 AP22804_14.pdf
AP22814AW5-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: SOT25
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 3A
Supply voltage: 2.7...5.5V DC
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
Mindestbestellmenge: 112
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AP22913W6-7 AP22913.pdf
AP22913W6-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
202+0.35 EUR
228+0.31 EUR
266+0.27 EUR
385+0.19 EUR
407+0.18 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ150A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ150A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
285+0.25 EUR
334+0.21 EUR
421+0.17 EUR
582+0.12 EUR
658+0.11 EUR
705+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
DMNH45M7SCT
DMNH45M7SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
59+1.23 EUR
62+1.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMT6018LDR-13 DMT6018LDR.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
Produkt ist nicht verfügbar
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DMT6018LDR-7 DMT6018LDR.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
Produkt ist nicht verfügbar
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ZTX1149A ZTX1149A.pdf
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 135MHz
Produkt ist nicht verfügbar
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BAT54W-7-F BAT54W_AW_CW_SW.pdf
BAT54W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54W-13-F
BAT54W-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BAT54WQ-7-F SWQ.pdf
BAT54WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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SDMP0340LST-7-F ds30266.pdf
SDMP0340LST-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 30mA; reel,tape; 150mW
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.15W
Produkt ist nicht verfügbar
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2DB1713-13 2DB1713.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 3A; 2W; SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 3A
Kind of package: reel; tape
Pulsed collector current: 6A
Collector-emitter voltage: 12V
Type of transistor: PNP
Current gain: 270...680
Quantity in set/package: 2500pcs.
Polarisation: bipolar
Frequency: 180MHz
Case: SOT89
Produkt ist nicht verfügbar
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BC846BWQ-7-F BC846AW-BC848CW.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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P6SMAJ60ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P6SMAJ20ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P6SMAJ54ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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P6SMAJ64ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAJ70ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.17 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAJ75ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 7130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7130+0.17 EUR
Mindestbestellmenge: 7130
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAJ75ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.19 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAJ85ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.17 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6016LSD-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA9455E6A58BF&compId=DMTH6016LSD.pdf?ci_sign=3926830cab1121f302ab6525339bab48bcec11f8
DMTH6016LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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B530CQ-13-F B520CQ-B560CQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 300pF
Application: automotive industry
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV271CW5-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF6A8738CC6746&compId=TLV27x.pdf?ci_sign=c8e3758d81c13254976ddb4989fadd03b45f1505
TLV271CW5-7
+1
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: 0...70°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
auf Bestellung 1636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
256+0.28 EUR
285+0.25 EUR
327+0.22 EUR
397+0.18 EUR
428+0.17 EUR
439+0.16 EUR
Mindestbestellmenge: 209
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TLV271IW5-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF6A8738CC6746&compId=TLV27x.pdf?ci_sign=c8e3758d81c13254976ddb4989fadd03b45f1505
TLV271IW5-7
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: -40...125°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ40A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ40A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
355+0.2 EUR
610+0.12 EUR
893+0.08 EUR
944+0.076 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ40AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C2V4-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C2V4-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
794+0.09 EUR
1656+0.043 EUR
2337+0.031 EUR
3402+0.021 EUR
3460+0.02 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C2V4Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C2V4Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C2V4S-7-F ds30108.pdf
BZX84C2V4S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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BZX84C2V4TS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585
BZX84C2V4TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C2V4T-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED55B8547B42A18&compId=BZX84CxxT_SER.pdf?ci_sign=651b14972163ebab9dde6b57178e9cc7352e90e9
BZX84C2V4T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.4V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C2V4W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C2V4W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C2V4Q-13-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.025 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
S1D-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1D-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 1632 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
511+0.14 EUR
575+0.12 EUR
842+0.085 EUR
1632+0.044 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RS1D-13-F ds15002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S1A-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 1.8µs
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Type of diode: rectifying
auf Bestellung 5012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
603+0.12 EUR
975+0.073 EUR
1334+0.054 EUR
2263+0.032 EUR
2393+0.03 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
S3A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9EBFD5F4E2A180D3&compId=S3x_S3xB.pdf?ci_sign=ccafe98c8bffbf380df095241579390f889c4e23
S3A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Load current: 3A
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: rectifying
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
272+0.26 EUR
281+0.25 EUR
382+0.19 EUR
404+0.18 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
AP7343D-15FS4-7B AP7343.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; X2DFN4; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.39V
Number of channels: 1
Tolerance: ±1%
Kind of package: reel; tape
Output voltage: 1.5V
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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SMAJ48A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ48A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
295+0.24 EUR
334+0.21 EUR
384+0.19 EUR
531+0.13 EUR
933+0.077 EUR
987+0.073 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ48AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Diodes - Unclassified
Description: SMAJ48AQ-13-F
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.13 EUR
Mindestbestellmenge: 5000
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SMAJ43CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ43CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
241+0.3 EUR
283+0.25 EUR
511+0.14 EUR
610+0.12 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
AP8803WTG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE988DF3FB10D2538BF&compId=AP8803.pdf?ci_sign=add08831be99a7afe663f66186a00d1561e69ef8
AP8803WTG-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Integrated circuit features: linear dimming; PWM
auf Bestellung 1197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
61+1.17 EUR
68+1.06 EUR
72+1 EUR
100+0.97 EUR
Mindestbestellmenge: 45
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