auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.52 EUR |
| 2500+ | 1.42 EUR |
| 5000+ | 1.37 EUR |
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Technische Details DMT4005SCT Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V, Power Dissipation (Max): 2.3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V.
Weitere Produktangebote DMT4005SCT nach Preis ab 2.72 EUR bis 3.03 EUR
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DMT4005SCT | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 40V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 2.3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V |
auf Bestellung 3950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4005SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Drain-source voltage: 40V Drain current: 85A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Gate charge: 49.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT4005SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Drain-source voltage: 40V Drain current: 85A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Gate charge: 49.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: THT |
Produkt ist nicht verfügbar |