DMTH6010SPS-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 10.4A
Drain-source voltage: 60V
Case: PowerDI5060-8
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH6010SPS-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W, Mounting: SMD, Kind of package: 13 inch reel; tape, Polarisation: unipolar, On-state resistance: 8mΩ, Drain current: 10.4A, Drain-source voltage: 60V, Case: PowerDI5060-8, Gate charge: 38.1nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 400A, Type of transistor: N-MOSFET, Power dissipation: 2.6W, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMTH6010SPS-13
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Verfügbarkeit |
Preis |
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DMTH6010SPS-13 | Hersteller : Diodes Incorporated |
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DMTH6010SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
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| DMTH6010SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W Mounting: SMD Kind of package: 13 inch reel; tape Polarisation: unipolar On-state resistance: 8mΩ Drain current: 10.4A Drain-source voltage: 60V Case: PowerDI5060-8 Gate charge: 38.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Type of transistor: N-MOSFET Power dissipation: 2.6W |
Produkt ist nicht verfügbar |