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DMTH6010SPS-13 DIODES INCORPORATED


DMTH6010SPS.pdf Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 10.4A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH6010SPS-13 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W, Case: PowerDI5060-8, Mounting: SMD, Power dissipation: 2.6W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 38.1nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 400A, Drain-source voltage: 60V, Drain current: 10.4A, On-state resistance: 8mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 2500 Stücke.

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DMTH6010SPS-13 DMTH6010SPS-13 Hersteller : Diodes Incorporated DMTH6010SPS.pdf Description: MOSFET N-CH 60V PWRDI5060
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DMTH6010SPS-13 DMTH6010SPS-13 Hersteller : Diodes Incorporated DIOD_S_A0008363863_1-2543057.pdf MOSFET MOSFET BVDSS: 31V-40V
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DMTH6010SPS-13 Hersteller : DIODES INCORPORATED DMTH6010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 10.4A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH