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DMTH6010SPS-13

DMTH6010SPS-13 Diodes Incorporated


DMTH6010SPS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
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Technische Details DMTH6010SPS-13 Diodes Incorporated

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W, Case: PowerDI5060-8, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, Drain-source voltage: 60V, Pulsed drain current: 400A, Drain current: 10.4A, Gate charge: 38.1nC, On-state resistance: 8mΩ, Power dissipation: 2.6W, Gate-source voltage: ±20V, Kind of package: 13 inch reel; tape.

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DMTH6010SPS-13 DMTH6010SPS-13 Hersteller : Diodes Incorporated DIOD_S_A0008363863_1-2543057.pdf MOSFET MOSFET BVDSS: 31V-40V
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DMTH6010SPS-13 Hersteller : DIODES INCORPORATED DMTH6010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 400A
Drain current: 10.4A
Gate charge: 38.1nC
On-state resistance: 8mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH