Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74213) > Seite 1237 nach 1237
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| B350AF-13 | DIODES INCORPORATED |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Capacitance: 0.11nF Max. forward voltage: 0.65V Max. forward impulse current: 80A Kind of package: reel; tape Leakage current: 24mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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B350AQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Capacitance: 0.2nF Max. forward voltage: 0.7V Max. forward impulse current: 80A Kind of package: reel; tape Power dissipation: 0.85W Application: automotive industry Leakage current: 20mA |
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SMCJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 23.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 2806 Stücke: Lieferzeit 14-21 Tag (e) |
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AP62201Z6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; SOT563 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.2...18V DC Output voltage: 0.8...7V DC Output current: 2A Case: SOT563 Mounting: SMD Frequency: 750kHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 84% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SB3100-T | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Case: DO201AD Max. forward voltage: 0.79V Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 100A |
auf Bestellung 1184 Stücke: Lieferzeit 14-21 Tag (e) |
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PDS3100-13-83 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 90A Kind of package: reel; tape |
auf Bestellung 2288 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PDS3100Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.76V Max. forward impulse current: 90A Kind of package: reel; tape Application: automotive industry Leakage current: 20mA |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3016LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 8.2/-6.2A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.028/0.016Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2489 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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2N7002DW-7-F | DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 5975 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56HDWQ-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Features of semiconductor devices: small signal Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS40DW-06-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape Capacitance: 5pF Type of diode: Schottky switching Reverse recovery time: 5ns Mounting: SMD Max. forward impulse current: 0.6A Max. forward voltage: 1V Power dissipation: 0.2W Max. off-state voltage: 40V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common anode; double x2 Leakage current: 0.2µA Case: SOT363 |
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BAS70DW-06-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape Capacitance: 2pF Type of diode: Schottky switching Reverse recovery time: 5ns Mounting: SMD Max. forward impulse current: 0.1A Max. forward voltage: 1V Power dissipation: 0.2W Max. off-state voltage: 70V Load current: 70mA Kind of package: reel; tape Semiconductor structure: common anode; double x2 Leakage current: 0.1µA Case: SOT363 |
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DMP6023LE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.2A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.2A Power dissipation: 2W Case: SOT223 On-state resistance: 28mΩ Mounting: SMD Gate charge: 53.1nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMP6023LEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 53.1nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMP6023LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.3A Pulsed drain current: -50A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 53.1nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP6023LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMP6023LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 53.1nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP6023LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 53.1nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMBJ160A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 160V Breakdown voltage: 178...205V Max. forward impulse current: 2.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMBJ160CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 160V Breakdown voltage: 178...205V Max. forward impulse current: 2.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZT585B4V3T-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 4.3V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846B-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT23 Mounting: SMD Frequency: 300MHz Current gain: 200...450 Kind of package: reel; tape Manufacturer standard package: 3000pcs. Power dissipation: 0.31W Pulsed collector current: 0.2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DDTA114GCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
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DDTC114GCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 30 |
Produkt ist nicht verfügbar |
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DDTC114GUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 30 |
Produkt ist nicht verfügbar |
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DDTC114TCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 100...600 |
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| DDTC114TE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 100...600 |
Produkt ist nicht verfügbar |
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DDTC114TUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 100...600 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DDTC114WCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 24 |
Produkt ist nicht verfügbar |
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| DDTC114WE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 24 |
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DDTC114WUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 24 |
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| 74LVC1G04QSE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; inverter; IN: 1; CMOS; SMD; SOT353; 74LVC; -40÷125°C; 4uA Type of integrated circuit: digital Technology: CMOS Mounting: SMD Case: SOT353 Quiescent current: 4µA Family: LVC Number of inputs: 1 Kind of integrated circuit: inverter Manufacturer series: 74LVC Kind of output: push-pull Operating temperature: -40...125°C |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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S2A-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 1.15V Max. off-state voltage: 50V Load current: 1.5A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Capacitance: 20pF Type of diode: rectifying |
auf Bestellung 2162 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ZXTP2029FTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 1.2W Case: SOT23 Pulsed collector current: 5A Current gain: 40...300 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. |
auf Bestellung 1984 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SDM40E20LC-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 20V; 0.4A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 20V Load current: 0.4A Semiconductor structure: common cathode; double Max. forward voltage: 0.31V Max. forward impulse current: 2A Kind of package: reel; tape |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7311-33WG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD Manufacturer series: AP7311 Operating temperature: -40...85°C Output current: 0.15A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Output voltage: 3.3V Kind of package: reel; tape Case: SOT25 Number of channels: 1 Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2...6V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SBR10U150CTFP | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 5Ax2; Ifsm: 150A; ITO220AB; tube; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. load current: 10A Max. forward impulse current: 150A Kind of package: tube Technology: SBR® |
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| SBR40150CTFP-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 20Ax2; ITO220AB; tube; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 20A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. load current: 40A Kind of package: tube Technology: SBR® |
Produkt ist nicht verfügbar |
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| DMTH6009LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 350A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.3A Pulsed drain current: 350A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±16V On-state resistance: 12mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DXTN3C60PSQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 2.5W; PowerDI®5060-8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 2.5W Case: PowerDI®5060-8 Pulsed collector current: 8A Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Manufacturer standard package: 2500pcs. |
Produkt ist nicht verfügbar |
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| DMP2006UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI®3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 200nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMP2006UFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 200nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP2006UFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 200nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ZXTN25015DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 5A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 5A Power dissipation: 1.25W Case: SOT23 Pulsed collector current: 15A Mounting: SMD Frequency: 240MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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D5V0L2B3T-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; ESD; SOT523 Type of diode: TVS array Breakdown voltage: 6...8V Max. forward impulse current: 6A Peak pulse power dissipation: 0.2W Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Leakage current: 10nA Number of channels: 2 Capacitance: 20pF Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ZXTP56020FDBQ-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; automotive industry Mounting: SMD Polarisation: bipolar Application: automotive industry Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BC847BW-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 3000pcs. |
auf Bestellung 1145 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
SDM20U40-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.6V Max. forward impulse current: 1A Reverse recovery time: 10ns Kind of package: reel; tape Power dissipation: 0.15W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SDM20U40Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.6V Max. forward impulse current: 1A Reverse recovery time: 10ns Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry Leakage current: 5µA |
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Im Einkaufswagen Stück im Wert von UAH |
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SDM20U40-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.6V Max. forward impulse current: 1A Reverse recovery time: 10ns Kind of package: reel; tape Power dissipation: 0.15W Leakage current: 5µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SDM20U40Q-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.6V Max. forward impulse current: 1A Reverse recovery time: 10ns Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry Leakage current: 5µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DDC113TU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 1kΩ Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 1kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Pulsed collector current: 0.1A Type of transistor: NPN x2 Current gain: 100...600 Kind of package: reel; tape Case: SOT363 Frequency: 250MHz Collector current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FMMT720QTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 1.5A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 0.806W Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. Pulsed collector current: 4A Application: automotive industry Current gain: 12...480 Frequency: 150...180MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| B350AF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.65V
Max. forward impulse current: 80A
Kind of package: reel; tape
Leakage current: 24mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.65V
Max. forward impulse current: 80A
Kind of package: reel; tape
Leakage current: 24mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| B350AQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Power dissipation: 0.85W
Application: automotive industry
Leakage current: 20mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Power dissipation: 0.85W
Application: automotive industry
Leakage current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ40CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2806 Stücke:
Lieferzeit 14-21 Tag (e)
| AP62201Z6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; SOT563
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 84%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; SOT563
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2A
Case: SOT563
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 84%
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| SB3100-T |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Case: DO201AD
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Case: DO201AD
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)
| PDS3100-13-83 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 90A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 90A
Kind of package: reel; tape
auf Bestellung 2288 Stücke:
Lieferzeit 14-21 Tag (e)
| PDS3100Q-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 20mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 20mA
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
| DMC3016LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.016Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.016Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002DW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)
| BAW56HDWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| BAS40DW-06-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Capacitance: 5pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.2µA
Case: SOT363
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Capacitance: 5pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.2µA
Case: SOT363
Produkt ist nicht verfügbar
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| BAS70DW-06-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Capacitance: 2pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 70V
Load current: 70mA
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.1µA
Case: SOT363
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Capacitance: 2pF
Type of diode: Schottky switching
Reverse recovery time: 5ns
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.2W
Max. off-state voltage: 70V
Load current: 70mA
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Leakage current: 0.1µA
Case: SOT363
Produkt ist nicht verfügbar
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| DMP6023LE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.2A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.2A
Power dissipation: 2W
Case: SOT223
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.2A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.2A
Power dissipation: 2W
Case: SOT223
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMP6023LEQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMP6023LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -50A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -50A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP6023LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP6023LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP6023LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 53.1nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| SMBJ160A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SMBJ160CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZT585B4V3T-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| BC846B-13-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Current gain: 200...450
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Power dissipation: 0.31W
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Current gain: 200...450
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Power dissipation: 0.31W
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| DDTA114GCA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114GCA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114GUA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114TCA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 100...600
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114TE-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 100...600
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114TUA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 100...600
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| DDTC114WCA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 24
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114WE-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 24
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC114WUA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 24
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G04QSE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; IN: 1; CMOS; SMD; SOT353; 74LVC; -40÷125°C; 4uA
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Case: SOT353
Quiescent current: 4µA
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Manufacturer series: 74LVC
Kind of output: push-pull
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; inverter; IN: 1; CMOS; SMD; SOT353; 74LVC; -40÷125°C; 4uA
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Case: SOT353
Quiescent current: 4µA
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Manufacturer series: 74LVC
Kind of output: push-pull
Operating temperature: -40...125°C
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| S2A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
Max. off-state voltage: 50V
Load current: 1.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 20pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
Max. off-state voltage: 50V
Load current: 1.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 20pF
Type of diode: rectifying
auf Bestellung 2162 Stücke:
Lieferzeit 14-21 Tag (e)
| ZXTP2029FTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 5A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 5A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
auf Bestellung 1984 Stücke:
Lieferzeit 14-21 Tag (e)
| SDM40E20LC-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 20V; 0.4A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.4A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.31V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 20V; 0.4A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.4A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.31V
Max. forward impulse current: 2A
Kind of package: reel; tape
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
| AP7311-33WG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Manufacturer series: AP7311
Operating temperature: -40...85°C
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Manufacturer series: AP7311
Operating temperature: -40...85°C
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2...6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SBR10U150CTFP |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 5Ax2; Ifsm: 150A; ITO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. load current: 10A
Max. forward impulse current: 150A
Kind of package: tube
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 5Ax2; Ifsm: 150A; ITO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. load current: 10A
Max. forward impulse current: 150A
Kind of package: tube
Technology: SBR®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR40150CTFP-G |
|
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 20Ax2; ITO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. load current: 40A
Kind of package: tube
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 20Ax2; ITO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. load current: 40A
Kind of package: tube
Technology: SBR®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH6009LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 350A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 350A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 350A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.3A
Pulsed drain current: 350A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DXTN3C60PSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2.5W; PowerDI®5060-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2.5W
Case: PowerDI®5060-8
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2.5W; PowerDI®5060-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2.5W
Case: PowerDI®5060-8
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 2500pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2006UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI®3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI®3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP2006UFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMP2006UFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZXTN25015DFHTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 15A
Mounting: SMD
Frequency: 240MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 15A
Mounting: SMD
Frequency: 240MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| D5V0L2B3T-7 |
|
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; ESD; SOT523
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.2W
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Leakage current: 10nA
Number of channels: 2
Capacitance: 20pF
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; ESD; SOT523
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.2W
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Leakage current: 10nA
Number of channels: 2
Capacitance: 20pF
Kind of package: reel; tape
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| ZXTP56020FDBQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; automotive industry
Mounting: SMD
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; automotive industry
Mounting: SMD
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP x2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BC847BW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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Lieferzeit 14-21 Tag (e)
| SDM20U40-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
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| SDM20U40Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Leakage current: 5µA
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Stück im Wert von UAH
| SDM20U40-13 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Leakage current: 5µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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Stück im Wert von UAH
| SDM20U40Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Leakage current: 5µA
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| DDC113TU-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 1kΩ
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Pulsed collector current: 0.1A
Type of transistor: NPN x2
Current gain: 100...600
Kind of package: reel; tape
Case: SOT363
Frequency: 250MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 1kΩ
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Pulsed collector current: 0.1A
Type of transistor: NPN x2
Current gain: 100...600
Kind of package: reel; tape
Case: SOT363
Frequency: 250MHz
Collector current: 0.1A
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| FMMT720QTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 0.806W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 4A
Application: automotive industry
Current gain: 12...480
Frequency: 150...180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 0.806W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 4A
Application: automotive industry
Current gain: 12...480
Frequency: 150...180MHz
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