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DMP2045UFY4-7 DIODES INCORPORATED DMP2045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -25A
Power dissipation: 1.49W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN26D0UT-7 DMN26D0UT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED9079072966A18&compId=DMN26D0UT.pdf?ci_sign=18d90f9daedebc14577cd2d97c57545b057eefd2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
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AP4305UKTR-G1 AP4305UKTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8BB53832AE1020C8&compId=AP4305.pdf?ci_sign=bfcd407907a8741673ffdf31cda6b6aa0db7c038 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Application: SMPS
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
DC supply current: 0.5mA
Operating voltage: 2.5...18V DC
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AP4305KTR-G1 AP4305KTR-G1 DIODES INCORPORATED AP4305.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
Operating voltage: 2.5...18V DC
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AP43771FBZ-13 DIODES INCORPORATED AP43771.pdf Category: Integrated circuits - Unclassified
Description: AP43771FBZ-13
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AM4967RGSTR-G1 DIODES INCORPORATED AM4967.pdf Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Operating temperature: -30...105°C
Case: SSOP16
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Operating voltage: 5.5...16V DC
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DMN601DWK-7 DMN601DWK-7 DIODES INCORPORATED DMN601DWK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN601DWKQ-7 DMN601DWKQ-7 DIODES INCORPORATED DMN601DWKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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PAM2808BLBR DIODES INCORPORATED PAM2808.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SO8-EP
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Output current: 1.5A
Produkt ist nicht verfügbar
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DT1042-04SOQ-7 DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.65pF
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
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ZDT1053TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F7F0EC97A0D2&compId=ZDT1053.pdf?ci_sign=eb3a570f69e4752060c04bdb29237351abc2bf20 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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SDT10100CT DIODES INCORPORATED SDT10100CT-SDT10100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 10mA
Max. forward voltage: 0.76V
Max. off-state voltage: 100V
Load current: 5A x2
Max. forward impulse current: 90A
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SDT10100P5-13 DIODES INCORPORATED SDT10100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 18mA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 110A
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SDT10A100P5-13 DIODES INCORPORATED SDT10A100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 20mA
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 0.24kA
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AS2376QS-13 DIODES INCORPORATED AS2376Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; SO8; 2.2÷5.5VDC; reel,tape
Case: SO8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 0.2pA
Input offset current: 0.2pA
Input offset voltage: 5µV
Quiescent current: 1mA
Voltage supply range: 2.2...5.5V DC
Slew rate: 2V/μs
Bandwidth: 5.5MHz
Kind of package: reel; tape
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MUR120-T DIODES INCORPORATED ds30178.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
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DMN2710UT-7 DMN2710UT-7 DIODES INCORPORATED DMN2710UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
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DMP21D0UT-7 DMP21D0UT-7 DIODES INCORPORATED DMP21D0UT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
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DMN31D6UT-7 DMN31D6UT-7 DIODES INCORPORATED DMN31D6UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance: 2Ω
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
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DMN62D0UT-7 DMN62D0UT-7 DIODES INCORPORATED DMN62D0UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance: 3Ω
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
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DMP22D6UT-7 DMP22D6UT-7 DIODES INCORPORATED ds31585.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
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DESD5V2S2UT-7 DIODES INCORPORATED ds31791.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
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DMN3010LFG-13 DIODES INCORPORATED DMN3010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMN3010LFG-7 DIODES INCORPORATED DMN3010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMT35M4LFDF-7 DIODES INCORPORATED DMT35M4LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Polarisation: unipolar
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 14.9nC
On-state resistance: 10.5mΩ
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F BAV99-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SMBJ8.5CA-13-F SMBJ8.5CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74HCT164T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FBC0D3&compId=74HCT164.pdf?ci_sign=cb4c53cc543bd10d3e5ba41847f244abef166c07 Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
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SMBJ43CA-13-F SMBJ43CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1954 Stücke:
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248+0.29 EUR
285+0.25 EUR
447+0.16 EUR
650+0.11 EUR
685+0.1 EUR
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74LVC1G86QSE-7 DIODES INCORPORATED 74LVC1G86Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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3.0SMCJ24CA-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BB741D84D880DF&compId=3.0SMCJxx.pdf?ci_sign=66b79dd9e6490985f47e629486c9d364f4777550 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AS431HANTR-G1 AS431HANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Case: SOT23
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.495V
Kind of package: reel; tape
Mounting: SMD
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338+0.21 EUR
385+0.19 EUR
455+0.16 EUR
556+0.13 EUR
981+0.073 EUR
1042+0.069 EUR
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AS431HMBNTR-G1 AS431HMBNTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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248+0.29 EUR
283+0.25 EUR
338+0.21 EUR
410+0.17 EUR
1000+0.072 EUR
1064+0.067 EUR
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AS431BZTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HMANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AKTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ARTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BKTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Case: TO92
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±1%
Reference voltage: 2.5V
Kind of package: Ammo Pack
Operating voltage: 2.5...36V
Mounting: THT
Produkt ist nicht verfügbar
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AS431HAZTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBNTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBZTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IANTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IAZTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBNTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBRTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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ZTX851STZ DIODES INCORPORATED ZTX851.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Produkt ist nicht verfügbar
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FZT956TA FZT956TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
66+1.09 EUR
109+0.66 EUR
115+0.62 EUR
250+0.6 EUR
Mindestbestellmenge: 42
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FZT956QTA DIODES INCORPORATED FZT956.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
Produkt ist nicht verfügbar
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DMP3056LSSQ-13 DMP3056LSSQ-13 DIODES INCORPORATED DMP3056LSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMP3056LSS-13 DMP3056LSS-13 DIODES INCORPORATED ds31419.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2045UFY4-7 DMP2045UFY4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -25A
Power dissipation: 1.49W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN26D0UT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED9079072966A18&compId=DMN26D0UT.pdf?ci_sign=18d90f9daedebc14577cd2d97c57545b057eefd2
DMN26D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
auf Bestellung 150 Stücke:
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Anzahl Preis
150+0.47 EUR
Mindestbestellmenge: 150
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AP4305UKTR-G1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8BB53832AE1020C8&compId=AP4305.pdf?ci_sign=bfcd407907a8741673ffdf31cda6b6aa0db7c038
AP4305UKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Application: SMPS
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
DC supply current: 0.5mA
Operating voltage: 2.5...18V DC
Produkt ist nicht verfügbar
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AP4305KTR-G1 AP4305.pdf
AP4305KTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
Operating voltage: 2.5...18V DC
Produkt ist nicht verfügbar
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AP43771FBZ-13 AP43771.pdf
Hersteller: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: AP43771FBZ-13
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.78 EUR
Mindestbestellmenge: 3000
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AM4967RGSTR-G1 AM4967.pdf
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Operating temperature: -30...105°C
Case: SSOP16
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Operating voltage: 5.5...16V DC
Produkt ist nicht verfügbar
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DMN601DWK-7 DMN601DWK.pdf
DMN601DWK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN601DWKQ-7 DMN601DWKQ.pdf
DMN601DWKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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PAM2808BLBR PAM2808.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SO8-EP
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Output current: 1.5A
Produkt ist nicht verfügbar
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DT1042-04SOQ-7
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.65pF
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Produkt ist nicht verfügbar
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ZDT1053TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F7F0EC97A0D2&compId=ZDT1053.pdf?ci_sign=eb3a570f69e4752060c04bdb29237351abc2bf20
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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SDT10100CT SDT10100CT-SDT10100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 10mA
Max. forward voltage: 0.76V
Max. off-state voltage: 100V
Load current: 5A x2
Max. forward impulse current: 90A
Produkt ist nicht verfügbar
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SDT10100P5-13 SDT10100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 18mA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 110A
Produkt ist nicht verfügbar
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SDT10A100P5-13 SDT10A100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 20mA
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 0.24kA
Produkt ist nicht verfügbar
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AS2376QS-13 AS2376Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; SO8; 2.2÷5.5VDC; reel,tape
Case: SO8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 0.2pA
Input offset current: 0.2pA
Input offset voltage: 5µV
Quiescent current: 1mA
Voltage supply range: 2.2...5.5V DC
Slew rate: 2V/μs
Bandwidth: 5.5MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MUR120-T ds30178.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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DMN2710UT-7 DMN2710UT.pdf
DMN2710UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP21D0UT-7 DMP21D0UT.pdf
DMP21D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance: 2Ω
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN62D0UT-7 DMN62D0UT.pdf
DMN62D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance: 3Ω
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP22D6UT-7 ds31585.pdf
DMP22D6UT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DESD5V2S2UT-7 ds31791.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
Produkt ist nicht verfügbar
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DMN3010LFG-13 DMN3010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
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DMN3010LFG-7 DMN3010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMT35M4LFDF-7 DMT35M4LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Polarisation: unipolar
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 14.9nC
On-state resistance: 10.5mΩ
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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BAV99Q-7-F BAV99.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F BAV99.pdf
BAV99-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SMBJ8.5CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ8.5CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.89 EUR
Mindestbestellmenge: 80
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74HCT164T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FBC0D3&compId=74HCT164.pdf?ci_sign=cb4c53cc543bd10d3e5ba41847f244abef166c07
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
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SMBJ43CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ43CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
248+0.29 EUR
285+0.25 EUR
447+0.16 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 193
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74LVC1G86QSE-7 74LVC1G86Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.097 EUR
Mindestbestellmenge: 3000
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3.0SMCJ24CA-13 pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BB741D84D880DF&compId=3.0SMCJxx.pdf?ci_sign=66b79dd9e6490985f47e629486c9d364f4777550
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AS431HANTR-G1 AS431H.pdf
AS431HANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Case: SOT23
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.495V
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
338+0.21 EUR
385+0.19 EUR
455+0.16 EUR
556+0.13 EUR
981+0.073 EUR
1042+0.069 EUR
Mindestbestellmenge: 278
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AS431HMBNTR-G1 AS431H.pdf
AS431HMBNTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
283+0.25 EUR
338+0.21 EUR
410+0.17 EUR
1000+0.072 EUR
1064+0.067 EUR
Mindestbestellmenge: 200
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AS431BZTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431ANTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431HMANTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431AKTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431ANTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431ARTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431AZTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BKTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BNTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BRTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BRTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BZTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Case: TO92
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±1%
Reference voltage: 2.5V
Kind of package: Ammo Pack
Operating voltage: 2.5...36V
Mounting: THT
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AS431HAZTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431HBNTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431HBZTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IANTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431IAZTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBNTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431IBRTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZTX851STZ ZTX851.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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FZT956TA pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da
FZT956TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
66+1.09 EUR
109+0.66 EUR
115+0.62 EUR
250+0.6 EUR
Mindestbestellmenge: 42
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FZT956QTA FZT956.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
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DMP3056LSSQ-13 DMP3056LSSQ.pdf
DMP3056LSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP3056LSS-13 ds31419.pdf
DMP3056LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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