DMP2160UFDBQ-7 Diodes Zetex
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
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Technische Details DMP2160UFDBQ-7 Diodes Zetex
Description: MOSFET 2P-CH 20V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Weitere Produktangebote DMP2160UFDBQ-7 nach Preis ab 0.23 EUR bis 0.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2160UFDBQ-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 3.8A Automotive AEC-Q101 6-Pin UDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 3.8A Automotive AEC-Q101 6-Pin UDFN EP T/R |
auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 3.8A Automotive AEC-Q101 6-Pin UDFN EP T/R |
auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 3.8A Automotive AEC-Q101 6-Pin UDFN EP T/R |
auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 153000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Incorporated | MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS |
auf Bestellung 16942 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 157411 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : Diodes Inc | Trans MOSFET P-CH 20V 3.8A Automotive 6-Pin UDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2160UFDBQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UFDBQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |