Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74798) > Seite 1238 nach 1247
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SMCJ75CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMCJ75AQ-13-F | DIODES INCORPORATED |
Category: Diodes - UnclassifiedDescription: SMCJ75AQ-13-F |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMCJ75CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5250BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode Case: SOD323 Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.2W Tolerance: ±5% Zener voltage: 20V Kind of package: reel; tape |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMBZ5250B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 20V; SMD; reel,tape; SOT23; single diode Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Type of diode: Zener Tolerance: ±5% Power dissipation: 0.35W Zener voltage: 20V |
Produkt ist nicht verfügbar |
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AP7370-33W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 0.3A Case: SOT25 Mounting: SMD Manufacturer series: AP7370 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1...2% Number of channels: 1 Input voltage: 3.2...18V |
Produkt ist nicht verfügbar |
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DFLT30A-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 225W; 33.3÷36.8V; 4.65A; unidirectional; PowerDI®123 Kind of package: reel; tape Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 4.65A Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Peak pulse power dissipation: 225W Case: PowerDI®123 |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ22AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ28A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 5900 Stücke: Lieferzeit 14-21 Tag (e) |
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| 3.0SMCJ28A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 66.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMBJ24CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SMBJ24CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ZXTP01500BGTC | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2331SA-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: SOT23 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
auf Bestellung 830 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 50...57.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMF4L30A-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; DO219AA Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.5µA Max. forward impulse current: 8.3A Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Peak pulse power dissipation: 0.4kW Case: DO219AA |
Produkt ist nicht verfügbar |
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| MMDT2222V-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.6A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Frequency: 300MHz Current gain: 35...300 Quantity in set/package: 3000pcs. Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MMST2222A-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 600mA; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Frequency: 300MHz Current gain: 35...300 Quantity in set/package: 3000pcs. Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SMF4L60A-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; DO219AA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: DO219AA Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DMT67M8LCGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12.8A Pulsed drain current: 256A Power dissipation: 2.2W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 37.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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| DMN33D9LV-13A | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 1.23nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AP2411MP-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Number of channels: 1 Mounting: SMD Case: MSOP8EP Kind of output: P-Channel Supply voltage: 2.7...5.5V DC Active logical level: high Kind of package: reel; tape Output current: 2A On-state resistance: 70mΩ |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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SXTA42TC | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1W Case: SOT89 Current gain: 25...40 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
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AP2191SG-13-82 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SO8 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
Produkt ist nicht verfügbar |
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BZT52C15SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C15T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| BZT52C15TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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| ZXTR2008Z-13 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 8.2V; 0.042A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8.2V Output current: 42mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 12...100V Manufacturer series: ZXTR2008Z |
Produkt ist nicht verfügbar |
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| AP7362A-33SP-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 3.3V Output current: 1.5A Case: SO8-EP Mounting: SMD Manufacturer series: AP7362 Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Tolerance: ±1.5% |
Produkt ist nicht verfügbar |
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| LM2902AT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier Type of integrated circuit: operational amplifier |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D9LV-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 1.23nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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| DMN3009SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN3009SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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DMN3009SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 80A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN3009LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT69M5LH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28.4nC On-state resistance: 15mΩ Power dissipation: 3.3W Drain current: 60A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 300A Kind of package: tube Case: TO251 |
Produkt ist nicht verfügbar |
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| DMN4030LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 7.7A; Idm: 37.7A; 2.14W; TO252 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 12.9nC On-state resistance: 50mΩ Power dissipation: 2.14W Drain current: 7.7A Gate-source voltage: ±20V Pulsed drain current: 37.7A Drain-source voltage: 40V Kind of package: 13 inch reel; tape Case: TO252 Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMT67M8LCG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12.8A Pulsed drain current: 256A Power dissipation: 2.2W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 37.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| 74LV08AT14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Kind of output: push-pull Family: LV Supply voltage: 2...5.5V DC Kind of input: with Schmitt trigger Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AS2348M8-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; MSOP8; reel,tape; 1pA Mounting: SMT Case: MSOP8 Type of integrated circuit: operational amplifier Integrated circuit features: rail-to-rail Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 1pA Input offset voltage: 2.5mV Voltage supply range: ± 0.8...2.5V DC; 1.6...5.5V DC Number of channels: 2 Bandwidth: 1MHz |
Produkt ist nicht verfügbar |
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| AS2348S-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; SO8; reel,tape; 1pA Mounting: SMT Case: SO8 Type of integrated circuit: operational amplifier Integrated circuit features: rail-to-rail Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 1pA Input offset voltage: 2.5mV Voltage supply range: ± 0.8...2.5V DC; 1.6...5.5V DC Number of channels: 2 Bandwidth: 1MHz |
Produkt ist nicht verfügbar |
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DMP6350S-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23 Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Drain-source voltage: -60V Pulsed drain current: -6A Drain current: -1.2A On-state resistance: 0.35Ω Power dissipation: 0.72W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
auf Bestellung 535 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428DNTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: U-DFN2020-6 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% Frequency: 1.5MHz Topology: buck |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428AKTTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% Frequency: 1.5MHz Topology: buck |
auf Bestellung 2675 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM4040B50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
Produkt ist nicht verfügbar |
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SDA004-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Application: universal Capacitance: 3pF Peak pulse power dissipation: 0.2W Number of channels: 2 Max. off-state voltage: 80V Reverse recovery time: 4ns Semiconductor structure: double series x2 Version: ESD |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP2G04FW3-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP Type of integrated circuit: digital Mounting: SMD Case: X2-DFN0910-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Family: AUP Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of integrated circuit: inverter Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 |
Produkt ist nicht verfügbar |
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74AUP2G04DW-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC Type of integrated circuit: digital Mounting: SMD Case: SOT363 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Family: AUP Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of integrated circuit: inverter Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 74AUP2G04FW4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP Type of integrated circuit: digital Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Family: AUP Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of integrated circuit: inverter Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74AUP2G04FZ4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP Type of integrated circuit: digital Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Family: AUP Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of integrated circuit: inverter Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
DMT10H015SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 215A Power dissipation: 2.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| D3V3H1B2LP-7B | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape Case: DFN1006-2 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Leakage current: 1mA Max. off-state voltage: 3.3V Breakdown voltage: 3.8V Max. forward impulse current: 40A Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
BAT40V-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double independent Case: SOT563 Max. forward voltage: 0.33V Max. forward impulse current: 0.75A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.15W |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP1G125FS3-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN0808-4 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 0.8...3.6V DC Family: AUP Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74AUP1G125FW5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X1-DFN1010-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 0.8...3.6V DC Family: AUP Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74AUP1G125FX4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1409-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 0.8...3.6V DC Family: AUP Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74AUP1G125FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Supply voltage: 0.8...3.6V DC Family: AUP Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AP33772DKZ-13 | DIODES INCORPORATED |
Category: USB interfaces - integrated circuitsDescription: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC Type of integrated circuit: interface Case: WQFN24 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Interface: GPIO; I2C; USB 3.0 Kind of integrated circuit: USB PD controller Supply voltage: 3.3...24V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| D14V0H1U2LP-7B | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 96W; 15÷18.5V; 3A; unidirectional; X1-DFN1006-2; Ch: 1 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 3A Max. off-state voltage: 14V Breakdown voltage: 15...18.5V Peak pulse power dissipation: 96W Case: X1-DFN1006-2 Semiconductor structure: unidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SMCJ75CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ75AQ-13-F |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| SMCJ75CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
| MMSZ5250BS-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 20V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 20V
Kind of package: reel; tape
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1790+ | 0.04 EUR |
| MMBZ5250B-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.35W
Zener voltage: 20V
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.35W
Zener voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP7370-33W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DFLT30A-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 225W; 33.3÷36.8V; 4.65A; unidirectional; PowerDI®123
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 4.65A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 225W
Case: PowerDI®123
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 225W; 33.3÷36.8V; 4.65A; unidirectional; PowerDI®123
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 4.65A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 225W
Case: PowerDI®123
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.03 EUR |
| SMBJ22AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| SMCJ28A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 107+ | 0.67 EUR |
| 116+ | 0.62 EUR |
| 177+ | 0.4 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.29 EUR |
| 3.0SMCJ28A-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ24CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ24CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTP01500BGTC |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.22 EUR |
| AP2331SA-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SOT23
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SOT23
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 239+ | 0.3 EUR |
| 269+ | 0.27 EUR |
| 315+ | 0.23 EUR |
| 382+ | 0.19 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| SMBJ45A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF4L30A-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; DO219AA
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. forward impulse current: 8.3A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.4kW
Case: DO219AA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; DO219AA
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. forward impulse current: 8.3A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.4kW
Case: DO219AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMDT2222V-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMST2222A-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 600mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 600mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF4L60A-7 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT67M8LCGQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12.8A
Pulsed drain current: 256A
Power dissipation: 2.2W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 37.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12.8A
Pulsed drain current: 256A
Power dissipation: 2.2W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 37.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN33D9LV-13A |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| AP2411MP-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
Mounting: SMD
Case: MSOP8EP
Kind of output: P-Channel
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of package: reel; tape
Output current: 2A
On-state resistance: 70mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
Mounting: SMD
Case: MSOP8EP
Kind of output: P-Channel
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of package: reel; tape
Output current: 2A
On-state resistance: 70mΩ
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 250+ | 0.29 EUR |
| 281+ | 0.25 EUR |
| 329+ | 0.22 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| SXTA42TC |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Current gain: 25...40
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Current gain: 25...40
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 50MHz
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| AP2191SG-13-82 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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| BZT52C15SQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 820+ | 0.087 EUR |
| 900+ | 0.08 EUR |
| BZT52C15T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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| BZT52C15TQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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| ZXTR2008Z-13 |
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Hersteller: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8.2V; 0.042A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8.2V
Output current: 42mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 12...100V
Manufacturer series: ZXTR2008Z
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8.2V; 0.042A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8.2V
Output current: 42mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 12...100V
Manufacturer series: ZXTR2008Z
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| AP7362A-33SP-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 3.3V
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Manufacturer series: AP7362
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Tolerance: ±1.5%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 3.3V
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Manufacturer series: AP7362
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Tolerance: ±1.5%
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| LM2902AT14-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.12 EUR |
| DMN33D9LV-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN3009LFVWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN3009SFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN3009SFGQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN3009SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN3009LFVQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.45 EUR |
| DMT69M5LH3 |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Drain current: 60A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 300A
Kind of package: tube
Case: TO251
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 15mΩ
Power dissipation: 3.3W
Drain current: 60A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 300A
Kind of package: tube
Case: TO251
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| DMN4030LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.7A; Idm: 37.7A; 2.14W; TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 12.9nC
On-state resistance: 50mΩ
Power dissipation: 2.14W
Drain current: 7.7A
Gate-source voltage: ±20V
Pulsed drain current: 37.7A
Drain-source voltage: 40V
Kind of package: 13 inch reel; tape
Case: TO252
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.7A; Idm: 37.7A; 2.14W; TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 12.9nC
On-state resistance: 50mΩ
Power dissipation: 2.14W
Drain current: 7.7A
Gate-source voltage: ±20V
Pulsed drain current: 37.7A
Drain-source voltage: 40V
Kind of package: 13 inch reel; tape
Case: TO252
Polarisation: unipolar
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| DMT67M8LCG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12.8A
Pulsed drain current: 256A
Power dissipation: 2.2W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 37.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12.8A
Pulsed drain current: 256A
Power dissipation: 2.2W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 37.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| 74LV08AT14-13 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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| AS2348M8-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; MSOP8; reel,tape; 1pA
Mounting: SMT
Case: MSOP8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset voltage: 2.5mV
Voltage supply range: ± 0.8...2.5V DC; 1.6...5.5V DC
Number of channels: 2
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; MSOP8; reel,tape; 1pA
Mounting: SMT
Case: MSOP8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset voltage: 2.5mV
Voltage supply range: ± 0.8...2.5V DC; 1.6...5.5V DC
Number of channels: 2
Bandwidth: 1MHz
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| AS2348S-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; reel,tape; 1pA
Mounting: SMT
Case: SO8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset voltage: 2.5mV
Voltage supply range: ± 0.8...2.5V DC; 1.6...5.5V DC
Number of channels: 2
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; reel,tape; 1pA
Mounting: SMT
Case: SO8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset voltage: 2.5mV
Voltage supply range: ± 0.8...2.5V DC; 1.6...5.5V DC
Number of channels: 2
Bandwidth: 1MHz
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| DMP6350S-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 188+ | 0.38 EUR |
| 232+ | 0.31 EUR |
| 256+ | 0.28 EUR |
| 291+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| AP3428DNTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: U-DFN2020-6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: U-DFN2020-6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 258+ | 0.28 EUR |
| 291+ | 0.25 EUR |
| 345+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| AP3428AKTTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Frequency: 1.5MHz
Topology: buck
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 194+ | 0.37 EUR |
| 230+ | 0.31 EUR |
| 302+ | 0.24 EUR |
| 363+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| LM4040B50FTA |
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Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDA004-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Capacitance: 3pF
Peak pulse power dissipation: 0.2W
Number of channels: 2
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Capacitance: 3pF
Peak pulse power dissipation: 0.2W
Number of channels: 2
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Version: ESD
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 130+ | 0.54 EUR |
| 74AUP2G04FW3-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN0910-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN0910-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP2G04DW-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Type of integrated circuit: digital
Mounting: SMD
Case: SOT363
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Type of integrated circuit: digital
Mounting: SMD
Case: SOT363
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP2G04FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP2G04FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT10H015SK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 215A
Power dissipation: 2.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 215A
Power dissipation: 2.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 100+ | 0.72 EUR |
| 116+ | 0.62 EUR |
| 127+ | 0.57 EUR |
| 500+ | 0.54 EUR |
| D3V3H1B2LP-7B |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1mA
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 40A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1mA
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAT40V-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 0.33V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 0.33V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.15W
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 463+ | 0.15 EUR |
| 646+ | 0.11 EUR |
| 780+ | 0.092 EUR |
| 74AUP1G125FS3-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1G125FW5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1G125FX4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1G125FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Family: AUP
Number of inputs: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Family: AUP
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP33772DKZ-13 |
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Hersteller: DIODES INCORPORATED
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC
Type of integrated circuit: interface
Case: WQFN24
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Interface: GPIO; I2C; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 3.3...24V DC
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC
Type of integrated circuit: interface
Case: WQFN24
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Interface: GPIO; I2C; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 3.3...24V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D14V0H1U2LP-7B |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 96W; 15÷18.5V; 3A; unidirectional; X1-DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 3A
Max. off-state voltage: 14V
Breakdown voltage: 15...18.5V
Peak pulse power dissipation: 96W
Case: X1-DFN1006-2
Semiconductor structure: unidirectional
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 96W; 15÷18.5V; 3A; unidirectional; X1-DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 3A
Max. off-state voltage: 14V
Breakdown voltage: 15...18.5V
Peak pulse power dissipation: 96W
Case: X1-DFN1006-2
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen
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