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DMT32M5LFG-7 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M5LCG-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.64W
Drain current: 11.7A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Case: V-DFN3333-8
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DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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DMT10H4M5LPS-13 DIODES INCORPORATED DMT10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.3W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH32M5LPSQ-13 DIODES INCORPORATED DMTH32M5LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.2mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPDWQ-13 DIODES INCORPORATED DMTH45M5LPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 7.9mΩ
Power dissipation: 3W
Drain current: 55A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPSWQ-13 DIODES INCORPORATED DMTH45M5LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 5.5mΩ
Power dissipation: 72W
Drain current: 86A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH10H4M5LPS-13 DIODES INCORPORATED DMTH10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.7W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMN3024LK3-13 DIODES INCORPORATED DMN3024LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.78A
Pulsed drain current: 46.5A
Power dissipation: 2.17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 12.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT3020UFDB-7 DIODES INCORPORATED DMT3020UFDB.pdf Category: Transistors - Unclassified
Description: DMT3020UFDB-7
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SDT3060VCT SDT3060VCT DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Leakage current: 50mA
Kind of package: tube
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SDT3060VCTFP SDT3060VCTFP DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
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SDT30100CTFP DIODES INCORPORATED SDT30100CT-SDT30100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; ITO220AB; Ufmax: 750mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode
Case: ITO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Leakage current: 0.1mA
Max. load current: 15A
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KBJ4005G KBJ4005G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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DMP1045UFY4-7 DMP1045UFY4-7 DIODES INCORPORATED DMP1045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Case: X2-DFN2015-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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FZT1048ATA FZT1048ATA DIODES INCORPORATED FZT1048A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3W
Collector current: 5A
Quantity in set/package: 1000pcs.
Collector-emitter voltage: 17.5V
Frequency: 150MHz
Polarisation: bipolar
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AH1808-W-7 DIODES INCORPORATED AH1808.pdf Category: Sensors and Transducers - Unclassified
Description: AH1808-W-7
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SMCJ36CA-13-F SMCJ36CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ36CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DDZ30ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Zener voltage: 30V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
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DMN2024U-7 DMN2024U-7 DIODES INCORPORATED DMN2024U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2024UFDF-13 DIODES INCORPORATED DMN2024UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 1.67W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2024UFDF-7 DIODES INCORPORATED DMN2024UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 0.96W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2024UFU-7 DIODES INCORPORATED DMN2024UFU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 50A
Power dissipation: 1.71W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AL1697-20CS7-13 DIODES INCORPORATED AL1697.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Operating voltage: 7...25V DC
Operating temperature: -40...105°C
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Topology: single transistor
Number of channels: 1
Output current: 2A
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BZX84C6V2-7-F BZX84C6V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C6V2S-7-F BZX84C6V2S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C6V2W-7-F BZX84C6V2W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84C6V2Q-7-F BZX84C6V2Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C6V2TS-7-F BZX84C6V2TS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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BZX84C9V1S-7-F DIODES INCORPORATED ds30108.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C9V1Q-13-F BZX84C9V1Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C9V1T-7-F BZX84C9V1T-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED55B8547B42A18&compId=BZX84CxxT_SER.pdf?ci_sign=651b14972163ebab9dde6b57178e9cc7352e90e9 Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C9V1W-7-F DIODES INCORPORATED ds30066.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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DMP58D0SV-7 DMP58D0SV-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1D246B3E3B8BF&compId=DMP58D0SV.pdf?ci_sign=a239c20ec3fdfa946006f89a1880fb65a4eb369c Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -160mA
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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D3V3F4U10LP-7
+1
 		D3V3F4U10LP-7 DIODES INCORPORATED D3V3F4U10LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Case: DFN2510-10
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.5pF
Kind of package: reel; tape
Number of channels: 4
Breakdown voltage: 5.5V
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D3V3F8U9LP3810-7 DIODES INCORPORATED D3V3F8U9LP3810.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Case: uDFN9
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: universal
Capacitance: 0.55pF
Kind of package: reel; tape
Number of channels: 8
Breakdown voltage: 5.5V
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SMAJ8.0CA-13-F SMAJ8.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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305+0.23 EUR
371+0.19 EUR
496+0.14 EUR
715+0.1 EUR
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APX823-31W5G-7 APX823-31W5G-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98597D9A0B0A238BF&compId=APX823_824_825A.pdf?ci_sign=e58b2230c8107c9624693080d4b2b19f291b9803 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 3.08V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
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241+0.3 EUR
269+0.27 EUR
313+0.23 EUR
376+0.19 EUR
407+0.18 EUR
432+0.17 EUR
600+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 193
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APX823-29W5G-7 APX823-29W5G-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98597D9A0B0A238BF&compId=APX823_824_825A.pdf?ci_sign=e58b2230c8107c9624693080d4b2b19f291b9803 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.93V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
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193+0.37 EUR
217+0.33 EUR
253+0.28 EUR
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500+0.2 EUR
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DMN2005UFG-7 DIODES INCORPORATED DMN2005UFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
Pulsed drain current: 130A
Power dissipation: 2.27W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2021UFDF-7 DIODES INCORPORATED DMP2021UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1009UFDF-7 DIODES INCORPORATED DMP1009UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -70A
Power dissipation: 2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-7 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1004UFDF-7 DIODES INCORPORATED DMN1004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDF-7 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2025UFDF-7 DIODES INCORPORATED DMN2025UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 30A
Power dissipation: 1.6W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3016LFDF-7 DIODES INCORPORATED DMN3016LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3042LFDF-7 DIODES INCORPORATED DMN3042LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1005UFDF-7 DIODES INCORPORATED DMP1005UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -10.3A
Pulsed drain current: -70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1012UFDF-7 DIODES INCORPORATED DMP1012UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2023UFDF-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E05FA6A79B78BF&compId=DMP2023UFDF.pdf?ci_sign=912fb07fa6c93dc48ed1765d781a9b2e128bee68 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-7 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2040UFDF-7 DIODES INCORPORATED DMP2040UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.9A
Pulsed drain current: -35A
Power dissipation: 0.8W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6110SFDF-7 DIODES INCORPORATED DMP6110SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT5015LFDF-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 7.3A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6013LFDF-7 DIODES INCORPORATED DMT6013LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6016LFDF-7 DIODES INCORPORATED DMT6016LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.9A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT32M5LFG-7 DMT32M5LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LPS-13 DMT32M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M5LCG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.64W
Drain current: 11.7A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Case: V-DFN3333-8
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DMT69M5LFVWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.3W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.2mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 7.9mΩ
Power dissipation: 3W
Drain current: 55A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPSWQ-13 DMTH45M5LPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 5.5mΩ
Power dissipation: 72W
Drain current: 86A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Produkt ist nicht verfügbar
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DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.7W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Produkt ist nicht verfügbar
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DMN3024LK3-13 DMN3024LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.78A
Pulsed drain current: 46.5A
Power dissipation: 2.17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 12.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
116+0.62 EUR
147+0.49 EUR
166+0.43 EUR
250+0.36 EUR
350+0.34 EUR
500+0.31 EUR
1000+0.26 EUR
2500+0.23 EUR
Mindestbestellmenge: 90
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DMT3020UFDB-7 DMT3020UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DMT3020UFDB-7
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
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SDT3060VCT SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Leakage current: 50mA
Kind of package: tube
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
90+0.8 EUR
112+0.64 EUR
123+0.58 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
SDT3060VCTFP SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCTFP
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
95+0.76 EUR
113+0.64 EUR
122+0.59 EUR
Mindestbestellmenge: 74
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SDT30100CTFP SDT30100CT-SDT30100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; ITO220AB; Ufmax: 750mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode
Case: ITO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Leakage current: 0.1mA
Max. load current: 15A
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.67 EUR
Mindestbestellmenge: 150
Im Einkaufswagen  Stück im Wert von  UAH
KBJ4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ4005G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Case: X2-DFN2015-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
auf Bestellung 2369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
169+0.42 EUR
211+0.34 EUR
272+0.26 EUR
500+0.19 EUR
1000+0.16 EUR
Mindestbestellmenge: 125
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FZT1048ATA FZT1048A.pdf
FZT1048ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3W
Collector current: 5A
Quantity in set/package: 1000pcs.
Collector-emitter voltage: 17.5V
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 981 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
93+0.78 EUR
139+0.52 EUR
500+0.43 EUR
Mindestbestellmenge: 55
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AH1808-W-7 AH1808.pdf
Hersteller: DIODES INCORPORATED
Category: Sensors and Transducers - Unclassified
Description: AH1808-W-7
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ36CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ36CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DDZ30ASF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Zener voltage: 30V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Produkt ist nicht verfügbar
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DMN2024U-7 DMN2024U.pdf
DMN2024U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2024UFDF-13 DMN2024UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 1.67W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2024UFDF-7 DMN2024UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 0.96W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2024UFU-7 DMN2024UFU.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 50A
Power dissipation: 1.71W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AL1697-20CS7-13 AL1697.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Operating voltage: 7...25V DC
Operating temperature: -40...105°C
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Topology: single transistor
Number of channels: 1
Output current: 2A
Produkt ist nicht verfügbar
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BZX84C6V2-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C6V2-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 3417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
863+0.083 EUR
1000+0.072 EUR
1866+0.038 EUR
2381+0.03 EUR
2809+0.025 EUR
3247+0.022 EUR
3417+0.021 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4
BZX84C6V2S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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BZX84C6V2W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C6V2W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C6V2Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C6V2Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C6V2TS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585
BZX84C6V2TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
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BZX84C9V1S-7-F ds30108.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C9V1Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C9V1Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84C9V1T-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED55B8547B42A18&compId=BZX84CxxT_SER.pdf?ci_sign=651b14972163ebab9dde6b57178e9cc7352e90e9
BZX84C9V1T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C9V1W-7-F ds30066.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP58D0SV-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1D246B3E3B8BF&compId=DMP58D0SV.pdf?ci_sign=a239c20ec3fdfa946006f89a1880fb65a4eb369c
DMP58D0SV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -160mA
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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D3V3F4U10LP-7 D3V3F4U10LP.pdf
D3V3F4U10LP-7
+1
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Case: DFN2510-10
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.5pF
Kind of package: reel; tape
Number of channels: 4
Breakdown voltage: 5.5V
Produkt ist nicht verfügbar
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D3V3F8U9LP3810-7 D3V3F8U9LP3810.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Case: uDFN9
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: universal
Capacitance: 0.55pF
Kind of package: reel; tape
Number of channels: 8
Breakdown voltage: 5.5V
Produkt ist nicht verfügbar
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SMAJ8.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ8.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
305+0.23 EUR
371+0.19 EUR
496+0.14 EUR
715+0.1 EUR
893+0.08 EUR
Mindestbestellmenge: 250
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APX823-31W5G-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98597D9A0B0A238BF&compId=APX823_824_825A.pdf?ci_sign=e58b2230c8107c9624693080d4b2b19f291b9803
APX823-31W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 3.08V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
241+0.3 EUR
269+0.27 EUR
313+0.23 EUR
376+0.19 EUR
407+0.18 EUR
432+0.17 EUR
600+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 193
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APX823-29W5G-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98597D9A0B0A238BF&compId=APX823_824_825A.pdf?ci_sign=e58b2230c8107c9624693080d4b2b19f291b9803
APX823-29W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.93V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
193+0.37 EUR
217+0.33 EUR
253+0.28 EUR
304+0.24 EUR
332+0.22 EUR
500+0.2 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
DMN2005UFG-7 DMN2005UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
Pulsed drain current: 130A
Power dissipation: 2.27W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2021UFDF-7 DMP2021UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1009UFDF-7 DMP1009UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -70A
Power dissipation: 2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3026SFDF-7 DMP3026SFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN1004UFDF-7 DMN1004UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN1008UFDF-7 DMN1008UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2025UFDF-7 DMN2025UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 30A
Power dissipation: 1.6W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3016LFDF-7 DMN3016LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3042LFDF-7 DMN3042LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1005UFDF-7 DMP1005UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -10.3A
Pulsed drain current: -70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1012UFDF-7 DMP1012UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2023UFDF-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E05FA6A79B78BF&compId=DMP2023UFDF.pdf?ci_sign=912fb07fa6c93dc48ed1765d781a9b2e128bee68
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2035UFDF-7 DMP2035UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2040UFDF-7 DMP2040UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.9A
Pulsed drain current: -35A
Power dissipation: 0.8W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP6110SFDF-7 DMP6110SFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT5015LFDF-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 7.3A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6013LFDF-7 DMT6013LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6016LFDF-7 DMT6016LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.9A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN10H220LFDF-7 DMN10H220LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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