Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74408) > Seite 1241 nach 1241
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| D5V0L1B2LPS-7B | DIODES INCORPORATED |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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D5V0L4B5S-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; bidirectional; SC70,SOT353; Ch: 4; reel,tape Number of channels: 4 Mounting: SMD Case: SC70; SOT353 Kind of package: reel; tape Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 0.1µA Capacitance: 20pF Type of diode: TVS array Breakdown voltage: 6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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B120-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.5V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 0.11nF Type of diode: Schottky rectifying |
auf Bestellung 6527 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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74LVC273AT20-13 | DIODES INCORPORATED |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...150°C Family: LVC Supply voltage: 1.65...3.6V DC Kind of package: reel; tape Kind of input: with Schmitt trigger Number of inputs: 1 |
Produkt ist nicht verfügbar |
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UMC5N-7 | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT353 Kind of package: reel; tape Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 47/4.7kΩ Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 30...68 Base-emitter resistor: 47/10kΩ Frequency: 250MHz Collector current: 0.1A |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AL8400QSE-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOT353; 0.3÷15mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Number of channels: 1 Mounting: SMD Case: SOT353 Operating temperature: -40...125°C Kind of package: reel; tape Output current: 0.3...15mA Integrated circuit features: linear dimming; PWM Application: automotive industry Operating voltage: 0.2...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DMN13H750S-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23 Kind of package: 13 inch reel; tape Gate charge: 5.6nC Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 130V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 0.85Ω Mounting: SMD Pulsed drain current: 3.3A Power dissipation: 1.26W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMN13H750S-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23 Kind of package: 7 inch reel; tape Gate charge: 5.6nC Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 130V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 0.85Ω Mounting: SMD Pulsed drain current: 3.3A Power dissipation: 1.26W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| D5V0L1B2LPS-7B |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D5V0L4B5S-7 |
|
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SC70,SOT353; Ch: 4; reel,tape
Number of channels: 4
Mounting: SMD
Case: SC70; SOT353
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Capacitance: 20pF
Type of diode: TVS array
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SC70,SOT353; Ch: 4; reel,tape
Number of channels: 4
Mounting: SMD
Case: SC70; SOT353
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Capacitance: 20pF
Type of diode: TVS array
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B120-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 0.11nF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 0.11nF
Type of diode: Schottky rectifying
auf Bestellung 6527 Stücke:
Lieferzeit 14-21 Tag (e)
| 74LVC273AT20-13 |
|
Hersteller: DIODES INCORPORATED
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Supply voltage: 1.65...3.6V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Supply voltage: 1.65...3.6V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UMC5N-7 |
|
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 47/4.7kΩ
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 30...68
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 47/4.7kΩ
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 30...68
Base-emitter resistor: 47/10kΩ
Frequency: 250MHz
Collector current: 0.1A
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
| AL8400QSE-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT353; 0.3÷15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 0.3...15mA
Integrated circuit features: linear dimming; PWM
Application: automotive industry
Operating voltage: 0.2...18V DC
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT353; 0.3÷15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 0.3...15mA
Integrated circuit features: linear dimming; PWM
Application: automotive industry
Operating voltage: 0.2...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN13H750S-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Kind of package: 13 inch reel; tape
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 130V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 0.85Ω
Mounting: SMD
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Kind of package: 13 inch reel; tape
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 130V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 0.85Ω
Mounting: SMD
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN13H750S-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Kind of package: 7 inch reel; tape
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 130V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 0.85Ω
Mounting: SMD
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Kind of package: 7 inch reel; tape
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 130V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 0.85Ω
Mounting: SMD
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH