DMP58D0SV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.16A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 50V 0.16A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-563
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Technische Details DMP58D0SV-7 Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.16A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 160mA, Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V, Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote DMP58D0SV-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP58D0SV-7 | Hersteller : Diodes Incorporated | MOSFET PMOS-Dual |
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DMP58D0SV-7 | Hersteller : DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563; ESD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -160mA Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |