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AP22913CN4-7 DIODES INCORPORATED AP22913.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: X1-WLB0909-4
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
DMTH41M8SPS-13 DIODES INCORPORATED DMTH41M8SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMTH41M8SPSQ-13 DIODES INCORPORATED DMTH41M8SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
SBR40U100CT SBR40U100CT DIODES INCORPORATED SBR40U100CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 235A
Kind of package: tube
Technology: SBR®
Produkt ist nicht verfügbar
DMP4006SPSWQ-13 DIODES INCORPORATED DMP4006SPSWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Kind of package: reel; tape
Gate charge: 162nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -460A
Drain-source voltage: -40V
Drain current: -92A
On-state resistance: 7.9mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4010SK3-13 DIODES INCORPORATED DMP4010SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4010SK3Q-13 DIODES INCORPORATED DMP4010SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SK3-13 DIODES INCORPORATED DMP4011SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SK3Q-13 DIODES INCORPORATED DMP4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SPSQ-13 DIODES INCORPORATED DMP4011SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LK3-13 DIODES INCORPORATED DMP4025LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -35A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.78W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSDQ-13 DMP4025LSDQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSS-13 DMP4025LSS-13 DIODES INCORPORATED DMP4025LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSSQ-13 DMP4025LSSQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFG-13 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFG-7 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFGQ-13 DMP4025SFGQ-13 DIODES INCORPORATED DMP4025SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI®3333-8
Drain-source voltage: -40V
Drain current: -5.4A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 0.81W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFGQ-7 DMP4025SFGQ-7 DIODES INCORPORATED DMP4025SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI®3333-8
Drain-source voltage: -40V
Drain current: -5.4A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 0.81W
Polarisation: unipolar
auf Bestellung 1664 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.18 EUR
161+ 0.45 EUR
182+ 0.39 EUR
221+ 0.32 EUR
233+ 0.31 EUR
Mindestbestellmenge: 61
DMN10H099SK3-13 DIODES INCORPORATED DMN10H099SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Produkt ist nicht verfügbar
SMCJ45CA-13-F SMCJ45CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMN2451UFB4Q-7B DIODES INCORPORATED DMN2451UFB4Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
DPS1135FIA-13 DIODES INCORPORATED DPS1135.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
DGD2113S16-13 DIODES INCORPORATED DGD2110-2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
ZXMP6A16KTC ZXMP6A16KTC DIODES INCORPORATED ZXMP6A16K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2643 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
132+ 0.54 EUR
151+ 0.47 EUR
157+ 0.46 EUR
167+ 0.43 EUR
500+ 0.41 EUR
Mindestbestellmenge: 69
AP62600SJ-7 DIODES INCORPORATED AP62600.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷18VDC; Uout: 0.6÷7VDC; 6A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...18V DC
Output voltage: 0.6...7V DC
Output current: 6A
Case: VQFN12
Mounting: SMD
Frequency: 400kHz...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
MMBTA56Q-7-F DIODES INCORPORATED MMBTA55_MMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
SMBJ70A-13-F SMBJ70A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.25 EUR
500+ 0.14 EUR
565+ 0.13 EUR
635+ 0.11 EUR
Mindestbestellmenge: 290
AL1783T16E-13 DIODES INCORPORATED AL1783.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
SMCJ60A-13-F SMCJ60A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 15.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ60CA-13-F SMCJ60CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 15.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
AP7387-50Y-13 DIODES INCORPORATED AP7387.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Manufacturer series: AP7387
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Tolerance: ±2%
Output voltage: 5V
Output current: 0.15A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
AP7387Q-50Y-13 DIODES INCORPORATED AP7387Q.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Manufacturer series: AP7387Q
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Tolerance: ±2%
Output voltage: 5V
Output current: 0.15A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
BAS70-06Q-13-F BAS70-06Q-13-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
BAS70-06Q-7-F BAS70-06Q-7-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
BAS70-06T-7-F BAS70-06T-7-F DIODES INCORPORATED BAS70T_-04T_-05T_-06T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; 5ns; SOT523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT523
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Power dissipation: 0.15W
Produkt ist nicht verfügbar
ZXSC380FHTA DIODES INCORPORATED ZXSC380.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DMN6075S-7 DMN6075S-7 DIODES INCORPORATED DMN6075S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
280+0.26 EUR
605+ 0.12 EUR
685+ 0.1 EUR
795+ 0.09 EUR
840+ 0.085 EUR
Mindestbestellmenge: 280
DMN2310U-7 DMN2310U-7 DIODES INCORPORATED DMN2310U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2310UW-7 DMN2310UW-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2310UWQ-7 DMN2310UWQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SBR130S3-7 SBR130S3-7 DIODES INCORPORATED SBR130S3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 30V; 1A; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Max. off-state voltage: 30V
Max. forward voltage: 0.46V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Produkt ist nicht verfügbar
AP9214L-AN-HSB-7 DIODES INCORPORATED AP9214L.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
AP9214LA-AA-HSB-7 DIODES INCORPORATED AP9214L.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
AP9214LA-AH-HSB-7 DIODES INCORPORATED AP9214L.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
AP9234LA-AO-HSB-7 DIODES INCORPORATED AP9234L.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li+; U-DFN2535-6
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
74LV14AS14-13 DIODES INCORPORATED 74LV14A.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: inverter
Family: LV
Case: SO14
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LV14AT14-13 DIODES INCORPORATED 74LV14A.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LV
Produkt ist nicht verfügbar
DMN3025LFV-7 DIODES INCORPORATED DMN3025LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 55A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMN3025LFG-13 DIODES INCORPORATED DMN3025LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN3025LFG-7 DIODES INCORPORATED DMN3025LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN3025LSS-13 DMN3025LSS-13 DIODES INCORPORATED DMN3025LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 40A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
AP3419KTTR-G1 AP3419KTTR-G1 DIODES INCORPORATED AP3419-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 1MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
SMBJ9.0A-13-F SMBJ9.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10÷11.5V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
215+0.33 EUR
Mindestbestellmenge: 215
SMCJ6.5A-13-F SMCJ6.5A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 133.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
140+0.51 EUR
Mindestbestellmenge: 140
SMCJ64A-13-F SMCJ64A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ64CA-13-F SMCJ64CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMBJ64A-13-F SMBJ64A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2070 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
575+ 0.12 EUR
650+ 0.11 EUR
720+ 0.099 EUR
740+ 0.097 EUR
Mindestbestellmenge: 335
DMP45H150DHE-13 DIODES INCORPORATED DMP45H150DHE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -200mA
On-state resistance: 150Ω
Type of transistor: P-MOSFET
Power dissipation: 13.9W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -0.45A
Produkt ist nicht verfügbar
AP64202SP-13 DIODES INCORPORATED AP64202.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output current: 2A
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Frequency: 100kHz...2.2MHz
Topology: buck
Produkt ist nicht verfügbar
AP22913CN4-7 AP22913.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: X1-WLB0909-4
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
DMTH41M8SPS-13 DMTH41M8SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMTH41M8SPSQ-13 DMTH41M8SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
SBR40U100CT SBR40U100CT.pdf
SBR40U100CT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 235A
Kind of package: tube
Technology: SBR®
Produkt ist nicht verfügbar
DMP4006SPSWQ-13 DMP4006SPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Kind of package: reel; tape
Gate charge: 162nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -460A
Drain-source voltage: -40V
Drain current: -92A
On-state resistance: 7.9mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4010SK3-13 DMP4010SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4010SK3Q-13 DMP4010SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SK3-13 DMP4011SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SK3Q-13 DMP4011SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SPSQ-13 DMP4011SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LK3-13 DMP4025LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -35A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.78W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSDQ-13
DMP4025LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSS-13 DMP4025LSS.pdf
DMP4025LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSSQ-13
DMP4025LSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFG-13 DMP4025SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFG-7 DMP4025SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFGQ-13 DMP4025SFGQ.pdf
DMP4025SFGQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI®3333-8
Drain-source voltage: -40V
Drain current: -5.4A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 0.81W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFGQ-7 DMP4025SFGQ.pdf
DMP4025SFGQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI®3333-8
Drain-source voltage: -40V
Drain current: -5.4A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 0.81W
Polarisation: unipolar
auf Bestellung 1664 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.18 EUR
161+ 0.45 EUR
182+ 0.39 EUR
221+ 0.32 EUR
233+ 0.31 EUR
Mindestbestellmenge: 61
DMN10H099SK3-13 DMN10H099SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Produkt ist nicht verfügbar
SMCJ45CA-13-F SMCJ_ser.pdf
SMCJ45CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMN2451UFB4Q-7B DMN2451UFB4Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
DPS1135FIA-13 DPS1135.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
DGD2113S16-13 DGD2110-2113.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
ZXMP6A16KTC ZXMP6A16K.pdf
ZXMP6A16KTC
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.75A; 4.24W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.75A
Power dissipation: 4.24W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
132+ 0.54 EUR
151+ 0.47 EUR
157+ 0.46 EUR
167+ 0.43 EUR
500+ 0.41 EUR
Mindestbestellmenge: 69
AP62600SJ-7 AP62600.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷18VDC; Uout: 0.6÷7VDC; 6A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...18V DC
Output voltage: 0.6...7V DC
Output current: 6A
Case: VQFN12
Mounting: SMD
Frequency: 400kHz...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
MMBTA56Q-7-F MMBTA55_MMBTA56.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
SMBJ70A-13-F SMBJ_ser.pdf
SMBJ70A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
290+0.25 EUR
500+ 0.14 EUR
565+ 0.13 EUR
635+ 0.11 EUR
Mindestbestellmenge: 290
AL1783T16E-13 AL1783.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
SMCJ60A-13-F SMCJ_ser.pdf
SMCJ60A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 15.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ60CA-13-F SMCJ_ser.pdf
SMCJ60CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 15.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
AP7387-50Y-13 AP7387.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Manufacturer series: AP7387
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Tolerance: ±2%
Output voltage: 5V
Output current: 0.15A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
AP7387Q-50Y-13 AP7387Q.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Manufacturer series: AP7387Q
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Tolerance: ±2%
Output voltage: 5V
Output current: 0.15A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
BAS70-06Q-13-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
BAS70-06Q-7-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
BAS70-06T-7-F BAS70T_-04T_-05T_-06T.pdf
BAS70-06T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; 5ns; SOT523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT523
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Power dissipation: 0.15W
Produkt ist nicht verfügbar
ZXSC380FHTA ZXSC380.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DMN6075S-7 DMN6075S.pdf
DMN6075S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
280+0.26 EUR
605+ 0.12 EUR
685+ 0.1 EUR
795+ 0.09 EUR
840+ 0.085 EUR
Mindestbestellmenge: 280
DMN2310U-7 DMN2310U.pdf
DMN2310U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2310UW-7
DMN2310UW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2310UWQ-7
DMN2310UWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SBR130S3-7 SBR130S3.pdf
SBR130S3-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 30V; 1A; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Max. off-state voltage: 30V
Max. forward voltage: 0.46V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Produkt ist nicht verfügbar
AP9214L-AN-HSB-7 AP9214L.pdf
Hersteller: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
AP9214LA-AA-HSB-7 AP9214L.pdf
Hersteller: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
AP9214LA-AH-HSB-7 AP9214L.pdf
Hersteller: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
AP9234LA-AO-HSB-7 AP9234L.pdf
Hersteller: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li+; U-DFN2535-6
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Number of rechargeable batteries: 1 x Li+
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Mounting: SMD
Case: U-DFN2535-6
Supply voltage: 1.5...5.5V DC
Produkt ist nicht verfügbar
FMMT618TA FMMT618.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
74LV14AS14-13 74LV14A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: inverter
Family: LV
Case: SO14
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LV14AT14-13 74LV14A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LV
Produkt ist nicht verfügbar
DMN3025LFV-7 DMN3025LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 55A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMN3025LFG-13 DMN3025LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN3025LFG-7 DMN3025LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN3025LSS-13 DMN3025LSS.pdf
DMN3025LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 40A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
AP3419KTTR-G1 AP3419-DTE.pdf
AP3419KTTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 1MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
SMBJ9.0A-13-F SMBJ_ser.pdf
SMBJ9.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10÷11.5V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
215+0.33 EUR
Mindestbestellmenge: 215
SMCJ6.5A-13-F SMCJ_ser.pdf
SMCJ6.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 133.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
140+0.51 EUR
Mindestbestellmenge: 140
SMCJ64A-13-F SMCJ_ser.pdf
SMCJ64A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ64CA-13-F SMCJ_ser.pdf
SMCJ64CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMBJ64A-13-F SMBJ_ser.pdf
SMBJ64A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
575+ 0.12 EUR
650+ 0.11 EUR
720+ 0.099 EUR
740+ 0.097 EUR
Mindestbestellmenge: 335
DMP45H150DHE-13 DMP45H150DHE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -200mA
On-state resistance: 150Ω
Type of transistor: P-MOSFET
Power dissipation: 13.9W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -0.45A
Produkt ist nicht verfügbar
AP64202SP-13 AP64202.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output current: 2A
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Frequency: 100kHz...2.2MHz
Topology: buck
Produkt ist nicht verfügbar
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