DMC1028UVT-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.22 EUR |
| 20000+ | 0.20 EUR |
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Technische Details DMC1028UVT-13 Diodes Incorporated
Description: MOSFET N/P-CH 12V 6.1A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26.
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