DMC1028UVT-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.19 EUR |
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Technische Details DMC1028UVT-13 DIODES INCORPORATED
Description: MOSFET N/P-CH 12V 6.1A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26.
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DMC1028UVT-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 12V/20V 6.1A/3.5A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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DMC1028UVT-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 12V 6.1A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
Produkt ist nicht verfügbar |
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DMC1028UVT-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 10K |
Produkt ist nicht verfügbar |