DMP3036SFV-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.29 EUR |
| 30000+ | 0.28 EUR |
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Technische Details DMP3036SFV-13 Diodes Incorporated
Description: MOSFET P-CH 30V 30A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V.
Weitere Produktangebote DMP3036SFV-13 nach Preis ab 0.28 EUR bis 0.97 EUR
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DMP3036SFV-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 5726 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3036SFV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V |
auf Bestellung 53998 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -80A Mounting: SMD Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP3036SFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -80A Mounting: SMD Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V |
Produkt ist nicht verfügbar |