Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74799) > Seite 1242 nach 1247
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| DMT12H060LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 115V Drain current: 4.4A Pulsed drain current: 20A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: 7 inch reel Kind of channel: enhancement Version: ESD |
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| DMT12H065LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 115V Drain current: 4.3A Pulsed drain current: 25A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: 7 inch reel Kind of channel: enhancement |
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| DMN29M9UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3008LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3028LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.4/-7.1A On-state resistance: 0.028/0.025Ω Power dissipation: 2.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3028LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: TO252 Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -22A On-state resistance: 25mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.3A Pulsed drain current: -40A Power dissipation: 1.6W Case: U-DFN1616-6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 44nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| DMP2035UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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DMP2035UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DMP2035UTS-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 3.96A Pulsed drain current: 22A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
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DMP2035UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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DMP2035UVTQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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DMP2035UVTQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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SD103CW-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW Mounting: SMD Capacitance: 28pF Reverse recovery time: 10ns Load current: 0.35A Power dissipation: 367mW Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Max. off-state voltage: 20V Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Type of diode: Schottky rectifying |
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SD103CWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape Mounting: SMD Load current: 0.35A Power dissipation: 0.2W Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Max. off-state voltage: 20V Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Type of diode: Schottky rectifying |
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1SMB5939B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
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| SDM1M40LP8-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns Type of diode: Schottky rectifying Case: U-DFN1608-2 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 25pF Max. forward voltage: 0.66V Leakage current: 0.8mA Max. forward impulse current: 8A Reverse recovery time: 8.4ns Kind of package: reel; tape |
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| SDM1M40LP8Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns Type of diode: Schottky rectifying Case: U-DFN1608-2 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 25pF Max. forward voltage: 0.66V Leakage current: 0.8mA Max. forward impulse current: 8A Reverse recovery time: 8.4ns Kind of package: reel; tape Application: automotive industry |
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SDT20A120CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward voltage: 0.79V Max. forward impulse current: 150A |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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| DT2042-04SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Case: SOT23-6 Kind of package: reel; tape Capacitance: 1.5pF Leakage current: 1µA Number of channels: 4 Breakdown voltage: 6V Max. forward impulse current: 10A Application: universal |
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| DT2042-04TS-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Case: TSOT26 Kind of package: reel; tape Capacitance: 1.5pF Leakage current: 1µA Number of channels: 4 Breakdown voltage: 6V Max. forward impulse current: 10A Application: HDMI |
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| SDT20A100CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Leakage current: 20mA Max. forward voltage: 0.67V Max. forward impulse current: 200A |
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| SDT20B100D1-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Leakage current: 16mA Max. forward voltage: 0.82V Max. forward impulse current: 100A |
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DGTD120T25S1PT | DIODES INCORPORATED |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Collector current: 25A Pulsed collector current: 100A Power dissipation: 174W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Mounting: THT Case: TO247-3 Kind of package: tube Turn-on time: 110ns Gate charge: 204nC Turn-off time: 367ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
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BAV20WS-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 5pF Kind of package: reel; tape Max. forward impulse current: 9A Case: SOD323 Max. forward voltage: 1.25V Max. load current: 0.625A Reverse recovery time: 50ns |
auf Bestellung 3547 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV20W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 5pF Kind of package: reel; tape Max. forward impulse current: 9A Case: SOD123 Max. forward voltage: 1.25V Max. load current: 0.625A Reverse recovery time: 50ns |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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| DXTN5820DFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
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MURS160-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape Capacitance: 10pF |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| MURS140-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape Capacitance: 10pF |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP31251W6-7 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 0.35A Frequency: 60...70kHz Mounting: SMD Case: SOT26 Number of channels: 1 Operating temperature: -40...85°C Duty cycle factor: 70...80% Supply voltage: 10...25V |
Produkt ist nicht verfügbar |
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AP2181SG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Case: SO8 Output current: 1.5A Number of channels: 1 Mounting: SMD Supply voltage: 2.7...5.5V DC On-state resistance: 95mΩ Active logical level: low Kind of output: P-Channel Kind of package: reel; tape |
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| DGD2181S8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 10...20V Pulse fall time: 35ns Impulse rise time: 60ns Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ZUMT618TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.25A Power dissipation: 0.5W Case: SOT323 Pulsed collector current: 4A Current gain: 20...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 210MHz |
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DMP10H400SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8A Power dissipation: 42W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2108 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ18CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 1533 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMAJ18CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMCJ33A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DMHT6016LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Pulsed drain current: 60A Power dissipation: 2.7W Case: V-DFN5045-12 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 17nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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SMBJ75CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| MURS160Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3018SFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Pulsed drain current: -70A Power dissipation: 1.9W Case: PowerDI3333-8 Gate-source voltage: ±25V On-state resistance: 21mΩ Mounting: SMD Gate charge: 51nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| DMP3018SFK-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.7A Power dissipation: 1W Case: U-DFN2523-6 Gate-source voltage: ±25V On-state resistance: 25.5mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DMP3018SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Pulsed drain current: -90A Power dissipation: 1.7W Case: SO8 Gate-source voltage: ±25V On-state resistance: 21mΩ Mounting: SMD Gate charge: 51nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BZT52C20-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 629 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C20T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C20LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C20Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZT52C20-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| BZT52C20SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BZT52C20TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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AP3125BKTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback Application: SMPS Case: SOT26 Type of integrated circuit: PMIC Topology: flyback Mounting: SMD Operating temperature: -20...125°C Duty cycle factor: 0...80% Output current: 0.35A Number of channels: 1 Supply voltage: 10...25V Frequency: 20...70kHz Kind of integrated circuit: PWM controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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GBU602 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU6005 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FZT489QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector current: 1A Power dissipation: 1.2W Collector-emitter voltage: 30V Current gain: 20...300 Quantity in set/package: 1000pcs. Frequency: 150MHz Application: automotive industry Polarisation: bipolar Type of transistor: NPN |
auf Bestellung 922 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| AL5890-10Y-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1 Type of integrated circuit: driver Output current: 10mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 7...400V DC Topology: single transistor Kind of integrated circuit: LED driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| AL5890-15Y-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1 Type of integrated circuit: driver Output current: 15mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 7...400V DC Topology: single transistor Kind of integrated circuit: LED driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| AL5890-30Y-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1 Type of integrated circuit: driver Output current: 30mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 7...400V DC Topology: single transistor Kind of integrated circuit: LED driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| AL5890-20Y-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1 Type of integrated circuit: driver Output current: 20mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 7...400V DC Topology: single transistor Kind of integrated circuit: LED driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCX789ATA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Collector current: 3A Pulsed collector current: 8A Power dissipation: 2W Collector-emitter voltage: 25V Current gain: 75...800 Quantity in set/package: 1000pcs. Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FZT489TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector current: 1A Pulsed collector current: 4A Power dissipation: 3W Collector-emitter voltage: 30V Current gain: 20...300 Quantity in set/package: 1000pcs. Frequency: 150MHz Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMT12H060LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.4A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.4A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT12H065LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN29M9UFDF-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| DMT3008LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
| DMC3028LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| DMP3028LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 123+ | 0.58 EUR |
| 177+ | 0.4 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| 2500+ | 0.25 EUR |
| DMP2035UFCL-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2035UFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2035UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2035UTS-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2035UVT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2035UVTQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2035UVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SD103CW-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SD103CWS-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5939B-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDM1M40LP8-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
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| SDM1M40LP8Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
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| SDT20A120CT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.52 EUR |
| DT2042-04SO-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
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| DT2042-04TS-7 |
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Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: HDMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: HDMI
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| SDT20A100CT |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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| SDT20B100D1-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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| DGTD120T25S1PT |
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Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
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| BAV20WS-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 3547 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| 742+ | 0.096 EUR |
| 831+ | 0.086 EUR |
| 985+ | 0.073 EUR |
| 1139+ | 0.063 EUR |
| 1337+ | 0.053 EUR |
| 2500+ | 0.042 EUR |
| BAV20W-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |
| DXTN5820DFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
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| MURS160-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 264+ | 0.27 EUR |
| 300+ | 0.24 EUR |
| MURS140-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 224+ | 0.32 EUR |
| 288+ | 0.25 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| AP31251W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.35A
Frequency: 60...70kHz
Mounting: SMD
Case: SOT26
Number of channels: 1
Operating temperature: -40...85°C
Duty cycle factor: 70...80%
Supply voltage: 10...25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.35A
Frequency: 60...70kHz
Mounting: SMD
Case: SOT26
Number of channels: 1
Operating temperature: -40...85°C
Duty cycle factor: 70...80%
Supply voltage: 10...25V
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| AP2181SG-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
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| DGD2181S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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| ZUMT618TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
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| DMP10H400SK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 136+ | 0.53 EUR |
| 151+ | 0.47 EUR |
| 209+ | 0.34 EUR |
| 264+ | 0.27 EUR |
| SMAJ18CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1533 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 285+ | 0.25 EUR |
| 329+ | 0.22 EUR |
| 388+ | 0.18 EUR |
| 596+ | 0.12 EUR |
| 820+ | 0.087 EUR |
| 1000+ | 0.08 EUR |
| SMAJ18CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SMCJ33A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DMHT6016LFJ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| SMBJ75CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| MURS160Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| DMP3018SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP3018SFK-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Power dissipation: 1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Power dissipation: 1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP3018SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -90A
Power dissipation: 1.7W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -90A
Power dissipation: 1.7W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| BZT52C20-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| BZT52C20T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 630+ | 0.11 EUR |
| BZT52C20LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 234+ | 0.31 EUR |
| 404+ | 0.18 EUR |
| 589+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| BZT52C20Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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| BZT52C20-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| BZT52C20SQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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| BZT52C20TQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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| AP3125BKTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
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| GBU602 |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 72+ | 1 EUR |
| 76+ | 0.95 EUR |
| GBU6005 |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| FZT489QTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1.2W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1.2W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 922 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| AL5890-10Y-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1
Type of integrated circuit: driver
Output current: 10mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1
Type of integrated circuit: driver
Output current: 10mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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| AL5890-15Y-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AL5890-30Y-13 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1
Type of integrated circuit: driver
Output current: 30mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1
Type of integrated circuit: driver
Output current: 30mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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| AL5890-20Y-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1
Type of integrated circuit: driver
Output current: 20mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1
Type of integrated circuit: driver
Output current: 20mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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| FCX789ATA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Power dissipation: 2W
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Power dissipation: 2W
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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| FZT489TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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