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DMT12H060LFDF-7 DIODES INCORPORATED DMT12H060LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.4A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Version: ESD
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DMT12H065LFDF-7 DIODES INCORPORATED DMT12H065LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel
Kind of channel: enhancement
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DMN29M9UFDF-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.19 EUR
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DMT3008LFDF-7 DIODES INCORPORATED DMT3008LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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3000+0.39 EUR
Mindestbestellmenge: 3000
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DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4497431891BF&compId=DMC3028LSD-13.pdf?ci_sign=e8f4f73fbf9a37396b74d8238e18c8d368559d8a Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP3028LK3-13 DMP3028LK3-13 DIODES INCORPORATED DMP3028LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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123+0.58 EUR
177+0.4 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
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DMP2035UFCL-7 DIODES INCORPORATED DMP2035UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-13 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UQ-7 DMP2035UQ-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UTS-13 DIODES INCORPORATED ds31940.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
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DMP2035UVT-13 DMP2035UVT-13 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UVTQ-13 DMP2035UVTQ-13 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UVTQ-7 DMP2035UVTQ-7 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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SD103CW-13-F SD103CW-13-F DIODES INCORPORATED SD103AW-SD103CW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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SD103CWS-7-F SD103CWS-7-F DIODES INCORPORATED SD103AWS_SD103CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SMB5939B-13 1SMB5939B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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SDM1M40LP8-7 DIODES INCORPORATED SDM1M40LP8.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
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SDM1M40LP8Q-7 DIODES INCORPORATED SDM1M40LP8Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
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SDT20A120CT SDT20A120CT DIODES INCORPORATED SDT20A120CT-SDT20A120CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
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DT2042-04SO-7 DIODES INCORPORATED DT2042-04SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
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DT2042-04TS-7 DIODES INCORPORATED DT2042-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: HDMI
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SDT20A100CT DIODES INCORPORATED SDT20A100CT-SDT20A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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SDT20B100D1-13 DIODES INCORPORATED SDT20B100D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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DGTD120T25S1PT DGTD120T25S1PT DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983D0C969BA50C143&compId=DGTD120T25S1PT.pdf?ci_sign=7251f7e9e40b293f31ad3ba94c6ca527db53ec83 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
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BAV20WS-7-F BAV20WS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797ACFCFD0C270748&compId=BAV19WS_BAV21WS.pdf?ci_sign=4a6c73c6a0d7bba03a4623d278fbd4b73c2ff2a0 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
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500+0.14 EUR
544+0.13 EUR
589+0.12 EUR
742+0.096 EUR
831+0.086 EUR
985+0.073 EUR
1139+0.063 EUR
1337+0.053 EUR
2500+0.042 EUR
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BAV20W-7-F BAV20W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B5A289EDC5EFA8&compId=BAV21W-DTE.pdf?ci_sign=79b0fbbe391ec181366f1a350ca16e01fc68a233 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
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DXTN5820DFDB-7 DIODES INCORPORATED DXTN5820DFDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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MURS160-13-F MURS160-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
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186+0.39 EUR
264+0.27 EUR
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MURS140-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
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224+0.32 EUR
288+0.25 EUR
500+0.21 EUR
1000+0.19 EUR
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AP31251W6-7 DIODES INCORPORATED AP31251.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.35A
Frequency: 60...70kHz
Mounting: SMD
Case: SOT26
Number of channels: 1
Operating temperature: -40...85°C
Duty cycle factor: 70...80%
Supply voltage: 10...25V
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AP2181SG-13 AP2181SG-13 DIODES INCORPORATED AP2181_91.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
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DGD2181S8-13 DIODES INCORPORATED DGD2181.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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ZUMT618TA DIODES INCORPORATED ZUMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
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DMP10H400SK3-13 DMP10H400SK3-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E026A349B3B8BF&compId=DMP10H400SK3.pdf?ci_sign=336e53a58952b0094da71bf55470e91163f04035 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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151+0.47 EUR
209+0.34 EUR
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SMAJ18CA-13-F SMAJ18CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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285+0.25 EUR
329+0.22 EUR
388+0.18 EUR
596+0.12 EUR
820+0.087 EUR
1000+0.08 EUR
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SMAJ18CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ33A-13-F SMCJ33A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMHT6016LFJ-13 DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SMBJ75CA-13-F SMBJ75CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MURS160Q-13-F DIODES INCORPORATED MURS160Q.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.36 EUR
Mindestbestellmenge: 3000
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DMP3018SFV-7 DIODES INCORPORATED DMP3018SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3018SFK-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0E8CC253998BF&compId=DMP3018SFK.pdf?ci_sign=46a80f7a6d55db13b2c24f41f51fd3544cc7c7fe Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Power dissipation: 1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3018SSS-13 DMP3018SSS-13 DIODES INCORPORATED DMP3018SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -90A
Power dissipation: 1.7W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZT52C20-7-F BZT52C20-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 629 Stücke:
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BZT52C20T-7 BZT52C20T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C20LP-7 BZT52C20LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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589+0.12 EUR
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BZT52C20Q-7-F BZT52C20Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C20-13-F BZT52C20-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C20SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C20TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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AP3125BKTR-G1 AP3125BKTR-G1 DIODES INCORPORATED AP3125B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
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GBU602 GBU602 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 90 Stücke:
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35+2.09 EUR
72+1 EUR
76+0.95 EUR
Mindestbestellmenge: 35
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GBU6005 GBU6005 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FZT489QTA FZT489QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACC993B1EB58BF&compId=FZT489.pdf?ci_sign=6989b71f7432f15f60c06a125e8dbe2be100b148 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1.2W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 922 Stücke:
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AL5890-10Y-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1
Type of integrated circuit: driver
Output current: 10mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-15Y-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-30Y-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1
Type of integrated circuit: driver
Output current: 30mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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AL5890-20Y-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1
Type of integrated circuit: driver
Output current: 20mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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FCX789ATA DIODES INCORPORATED FCX789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Power dissipation: 2W
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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FZT489TA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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DMT12H060LFDF-7 DMT12H060LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.4A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Version: ESD
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DMT12H065LFDF-7 DMT12H065LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel
Kind of channel: enhancement
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DMN29M9UFDF-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
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DMT3008LFDF-7 DMT3008LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.39 EUR
Mindestbestellmenge: 3000
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DMC3028LSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4497431891BF&compId=DMC3028LSD-13.pdf?ci_sign=e8f4f73fbf9a37396b74d8238e18c8d368559d8a
DMC3028LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 61 Stücke:
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Anzahl Preis
61+1.17 EUR
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DMP3028LK3-13 DMP3028LK3.pdf
DMP3028LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
123+0.58 EUR
177+0.4 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
2500+0.25 EUR
Mindestbestellmenge: 107
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DMP2035UFCL-7 DMP2035UFCL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-13 DMP2035UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UQ-7 DMP2035U.pdf
DMP2035UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMP2035UTS-13 ds31940.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Produkt ist nicht verfügbar
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DMP2035UVT-13 DMP2035UVT.pdf
DMP2035UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2035UVTQ-13 DMP2035UVTQ.pdf
DMP2035UVTQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMP2035UVTQ-7 DMP2035UVTQ.pdf
DMP2035UVTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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SD103CW-13-F SD103AW-SD103CW.pdf
SD103CW-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SD103CWS-7-F SD103AWS_SD103CWS.pdf
SD103CWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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1SMB5939B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5939B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
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SDM1M40LP8-7 SDM1M40LP8.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SDT20A120CT SDT20A120CT-SDT20A120CTFP.pdf
SDT20A120CT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.52 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
DT2042-04SO-7 DT2042-04SO.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
Produkt ist nicht verfügbar
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DT2042-04TS-7 DT2042-04TS.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: HDMI
Produkt ist nicht verfügbar
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SDT20A100CT SDT20A100CT-SDT20A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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SDT20B100D1-13 SDT20B100D1.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DGTD120T25S1PT pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983D0C969BA50C143&compId=DGTD120T25S1PT.pdf?ci_sign=7251f7e9e40b293f31ad3ba94c6ca527db53ec83
DGTD120T25S1PT
Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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BAV20WS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797ACFCFD0C270748&compId=BAV19WS_BAV21WS.pdf?ci_sign=4a6c73c6a0d7bba03a4623d278fbd4b73c2ff2a0
BAV20WS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 3547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
544+0.13 EUR
589+0.12 EUR
742+0.096 EUR
831+0.086 EUR
985+0.073 EUR
1139+0.063 EUR
1337+0.053 EUR
2500+0.042 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV20W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B5A289EDC5EFA8&compId=BAV21W-DTE.pdf?ci_sign=79b0fbbe391ec181366f1a350ca16e01fc68a233
BAV20W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
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DXTN5820DFDB-7 DXTN5820DFDB.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
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MURS160-13-F MURS140-MURS160.pdf
MURS160-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
264+0.27 EUR
300+0.24 EUR
Mindestbestellmenge: 186
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MURS140-13-F MURS140-MURS160.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
224+0.32 EUR
288+0.25 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
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AP31251W6-7 AP31251.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.35A
Frequency: 60...70kHz
Mounting: SMD
Case: SOT26
Number of channels: 1
Operating temperature: -40...85°C
Duty cycle factor: 70...80%
Supply voltage: 10...25V
Produkt ist nicht verfügbar
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AP2181SG-13 AP2181_91.pdf
AP2181SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DGD2181S8-13 DGD2181.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZUMT618TA ZUMT618.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
Produkt ist nicht verfügbar
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DMP10H400SK3-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E026A349B3B8BF&compId=DMP10H400SK3.pdf?ci_sign=336e53a58952b0094da71bf55470e91163f04035
DMP10H400SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
136+0.53 EUR
151+0.47 EUR
209+0.34 EUR
264+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ18CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ18CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
285+0.25 EUR
329+0.22 EUR
388+0.18 EUR
596+0.12 EUR
820+0.087 EUR
1000+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ18CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ33A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ33A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMHT6016LFJ-13 DMHT6016LFJ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ75CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ75CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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MURS160Q-13-F MURS160Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMP3018SFV-7 DMP3018SFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3018SFK-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0E8CC253998BF&compId=DMP3018SFK.pdf?ci_sign=46a80f7a6d55db13b2c24f41f51fd3544cc7c7fe
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Power dissipation: 1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3018SSS-13 DMP3018SSS.pdf
DMP3018SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -90A
Power dissipation: 1.7W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZT52C20-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C20-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
Mindestbestellmenge: 625
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BZT52C20T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C20T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
630+0.11 EUR
Mindestbestellmenge: 630
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BZT52C20LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
BZT52C20LP-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
234+0.31 EUR
404+0.18 EUR
589+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 173
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BZT52C20Q-7-F ds18004.pdf
BZT52C20Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C20-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C20-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C20SQ-7-F ds30093.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C20TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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AP3125BKTR-G1 AP3125B.pdf
AP3125BKTR-G1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
Produkt ist nicht verfügbar
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GBU602 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU602
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
72+1 EUR
76+0.95 EUR
Mindestbestellmenge: 35
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GBU6005 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU6005
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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FZT489QTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACC993B1EB58BF&compId=FZT489.pdf?ci_sign=6989b71f7432f15f60c06a125e8dbe2be100b148
FZT489QTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1.2W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 922 Stücke:
Lieferzeit 14-21 Tag (e)
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AL5890-10Y-13
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1
Type of integrated circuit: driver
Output current: 10mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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AL5890-15Y-13
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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AL5890-30Y-13
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1
Type of integrated circuit: driver
Output current: 30mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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AL5890-20Y-13 AL5890.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1
Type of integrated circuit: driver
Output current: 20mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
Produkt ist nicht verfügbar
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FCX789ATA FCX789A.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Power dissipation: 2W
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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FZT489TA FZT489.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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