DXTN5820DFDB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details DXTN5820DFDB-7 Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-, Power - Max: 690 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 6 A, Supplier Device Package: U-DFN2020-3 (Type B), Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DXTN5820DFDB-7 nach Preis ab 0.31 EUR bis 0.84 EUR
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DXTN5820DFDB-7 | Diodes Incorporated |
Description: SS LOW SAT TRANSISTOR U-DFN2020- Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V Frequency - Transition: 80MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 690 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DXTN5820DFDB-7 |
|
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.31 EUR |