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DGD2181S8-13

DGD2181S8-13 Diodes Incorporated


DGD2181.pdf Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 1902 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.47 EUR
25+2.09 EUR
100+1.65 EUR
250+1.44 EUR
500+1.31 EUR
1000+1.2 EUR
Mindestbestellmenge: 5
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Technische Details DGD2181S8-13 Diodes Incorporated

Description: IC GATE DRVR HALF-BRIDGE 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 40ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 1.9A, 2.3A, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.

Weitere Produktangebote DGD2181S8-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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DGD2181S8-13 DGD2181S8-13 Hersteller : Diodes Incorporated DGD2181-838188.pdf Gate Drivers H-Bridge Gate Driver 290mA 600mA
auf Bestellung 2290 Stücke:
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DGD2181S8-13 DGD2181S8-13 Hersteller : Diodes Inc dgd2181.pdf Driver 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO T/R
Produkt ist nicht verfügbar
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DGD2181S8-13 Hersteller : DIODES INCORPORATED DGD2181.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DGD2181S8-13 DGD2181S8-13 Hersteller : Diodes Incorporated DGD2181.pdf Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DGD2181S8-13 Hersteller : DIODES INCORPORATED DGD2181.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH