DMP3018SFK-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.54 EUR |
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Technische Details DMP3018SFK-7 Diodes Incorporated
Description: MOSFET P-CH 30V 10.2A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: U-DFN2523-6, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP3018SFK-7 nach Preis ab 0.62 EUR bis 2.08 EUR
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DMP3018SFK-7 | Diodes Incorporated |
 Description: MOSFET P-CH 30V 10.2A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2523-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
auf Bestellung 2038 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3018SFK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2523-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 10.2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2523-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 2038 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |