DMP3018SFK-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 10.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.67 EUR |
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Technische Details DMP3018SFK-7 Diodes Incorporated
Description: MOSFET P-CH 30V 10.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2523-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V.
Weitere Produktangebote DMP3018SFK-7 nach Preis ab 0.79 EUR bis 2.3 EUR
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DMP3018SFK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 10.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2523-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V |
auf Bestellung 5996 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3018SFK-7 | Hersteller : Diodes Incorporated |
MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss |
auf Bestellung 10740 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP3018SFK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6 Mounting: SMD Drain-source voltage: -30V Drain current: -7.7A On-state resistance: 25.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Case: U-DFN2523-6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3018SFK-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 10.2A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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DMP3018SFK-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 10.2A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMP3018SFK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6 Mounting: SMD Drain-source voltage: -30V Drain current: -7.7A On-state resistance: 25.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Case: U-DFN2523-6 |
Produkt ist nicht verfügbar |