DMP2035UFCL-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 6.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.33 EUR |
| 30000+ | 0.32 EUR |
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Technische Details DMP2035UFCL-7 Diodes Incorporated
Description: MOSFET P-CH 20V 6.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN1616-6 (Type K), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V.
Weitere Produktangebote DMP2035UFCL-7 nach Preis ab 0.31 EUR bis 0.99 EUR
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DMP2035UFCL-7 | Hersteller : Diodes Incorporated |
MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A |
auf Bestellung 1058 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2035UFCL-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 6.6A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V |
auf Bestellung 176012 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2035UFCL-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 6.6A 6-Pin UDFN EP T/R |
auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UFCL-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 6.6A T/R |
Produkt ist nicht verfügbar |
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| DMP2035UFCL-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Case: U-DFN1616-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UFCL-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Case: U-DFN1616-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A |
Produkt ist nicht verfügbar |