ZXMN6A09KTC
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auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details ZXMN6A09KTC
Description: MOSFET N-CH 60V 7.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V.
Weitere Produktangebote ZXMN6A09KTC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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ZXMN6A09KTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 7.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ZXMN6A09KTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 7.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
ZXMN6A09KTC | Diodes Incorporated |
MOSFETs MOSFET N-CH 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMN6A09KTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
Description: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A09KTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
Description: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A09KTC |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET N-CH 60V
MOSFETs MOSFET N-CH 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH