ZXMN6A09KTC Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 7.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.18 EUR |
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Technische Details ZXMN6A09KTC Diodes Incorporated
Description: MOSFET N-CH 60V 7.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V.
Weitere Produktangebote ZXMN6A09KTC nach Preis ab 1.25 EUR bis 3.38 EUR
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ZXMN6A09KTC | Hersteller : Diodes Incorporated |
MOSFET MOSFET N-CH 60V |
auf Bestellung 7488 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A09KTC | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 7.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |