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BC847AQ-7-F BC847AQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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ZXMP6A18KTC ZXMP6A18KTC DIODES INCORPORATED ZXMP6A18K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN6040SSS-13 DMN6040SSS-13 DIODES INCORPORATED DMN6040SSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG6602SVT-7 DMG6602SVT-7 DIODES INCORPORATED DMG6602SVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Power dissipation: 1.112W
Polarisation: unipolar
Drain current: 2.8/-3.4A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: TSOT26
On-state resistance: 0.06/0.095Ω
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AL1697-20CS7-13 DIODES INCORPORATED AL1697.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Mounting: SMD
Output current: 2A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 7...25V DC
Topology: single transistor
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AL5890-15D-13 AL5890-15D-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AP7363-25D-13 AP7363-25D-13 DIODES INCORPORATED AP7363.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.5V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
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AP2141WG-7 AP2141WG-7 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP21410FM-7 AP21410FM-7 DIODES INCORPORATED AP21410_21510.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2141DFMG-7 DIODES INCORPORATED AP2141D_51D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2141DSG-13 AP2141DSG-13 DIODES INCORPORATED AP2141D_51D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2141FMG-7 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DMN24H11DS-7 DMN24H11DS-7 DIODES INCORPORATED DMN24H11DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN24H11DSQ-7 DMN24H11DSQ-7 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN24H11DSQ-13 DMN24H11DSQ-13 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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P4SMAJ20ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 20V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: D-FLAT
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
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DMP2021UTS-13 DIODES INCORPORATED DMP2021UTS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Mounting: SMD
Pulsed drain current: -55A
Power dissipation: 1.3W
Gate charge: 59nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: TSSOP8
On-state resistance: 40mΩ
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ZXMP6A17E6QTA ZXMP6A17E6QTA DIODES INCORPORATED ZXMP6A17E6Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel
Power dissipation: 1.92W
Pulsed drain current: -13.6A
Gate charge: 17.7nC
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
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AP2552AW6-7 AP2552AW6-7 DIODES INCORPORATED AP255x.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Output current: 2.1A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 135mΩ
Supply voltage: 2.7...5.5V DC
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AP22802BW5-7 AP22802BW5-7 DIODES INCORPORATED AP22802.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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P4SMAJ70ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZXGD3003E6TA ZXGD3003E6TA DIODES INCORPORATED ZXGD3003E6.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
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FZT956TA FZT956TA DIODES INCORPORATED FZT9556.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
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FZT958TA FZT958TA DIODES INCORPORATED FZT958.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Current gain: 100...300
Frequency: 85MHz
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FZT956QTA FZT956QTA DIODES INCORPORATED FZT956.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Pulsed collector current: 5A
Application: automotive industry
Current gain: 10...300
Frequency: 110MHz
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SBR60A300CT SBR60A300CT DIODES INCORPORATED SBR60A300CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.94V
Max. forward impulse current: 235A
Kind of package: tube
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SBR60A200CT SBR60A200CT DIODES INCORPORATED SBR60A200CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.96V
Max. forward impulse current: 250A
Kind of package: tube
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SMCJ150A-13-F SMCJ150A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAS16VV-7 BAS16VV-7 DIODES INCORPORATED BAS16VV.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
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BAS16VVQ-7 BAS16VVQ-7 DIODES INCORPORATED BAS16VVQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
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BZT52C11SQ-7-F BZT52C11SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C11T-7 BZT52C11T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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DMN3032LE-13 DMN3032LE-13 DIODES INCORPORATED DMN3032LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 29mΩ
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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2N7002EQ-7-F 2N7002EQ-7-F DIODES INCORPORATED 2N7002EQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Gate charge: 0.5nC
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DDZ27ASF-7 DDZ27ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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B560CQ-13-F DIODES INCORPORATED B520CQ-B560CQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape
Application: automotive industry
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.3nF
Type of diode: Schottky rectifying
Reverse recovery time: 16ns
Mounting: SMD
Max. forward impulse current: 100A
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DML1010FDK-7 DIODES INCORPORATED DML1010FDK.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; U-DFN2020-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 8mΩ
Kind of package: reel; tape
Supply voltage: 0.8...4V DC
Operating temperature: -40...85°C
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SMBJ170A-13-F SMBJ170A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZTX601B ZTX601B DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Kind of package: bulk
Frequency: 250MHz
Manufacturer standard package: 4000pcs.
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ZTX603 ZTX603 DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 1A
Manufacturer standard package: 4000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
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ZTX601BSTZ ZTX601BSTZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Manufacturer standard package: 2000pcs.
Produkt ist nicht verfügbar
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ZTX601STZ ZTX601STZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Manufacturer standard package: 2000pcs.
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ZTX603STZ ZTX603STZ DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
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DDC114YU-7-F DDC114YU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Collector current: 70mA
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DDC114EU-7-F DDC114EU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 10kΩ
Collector current: 50mA
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DMP3036SSS-13 DMP3036SSS-13 DIODES INCORPORATED DMP3036SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM4040D25FTA LM4040D25FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Produkt ist nicht verfügbar
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LM4040D25QFTA LM4040D25QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; SOT23
Type of integrated circuit: voltage reference source
Case: SOT23
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APX803S-40SA-7 APX803S-40SA-7 DIODES INCORPORATED APX803S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
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APX803L20-18SA-7 APX803L20-18SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.8V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
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APX803S-44SA-7 APX803S-44SA-7 DIODES INCORPORATED APX803S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
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PDS760-13 PDS760-13 DIODES INCORPORATED PDS760.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 60V; 7A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMSZ5246B-7-F MMSZ5246B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2024U-7 DMN2024U-7 DIODES INCORPORATED DMN2024U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDTC123JE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
Frequency: 250MHz
Produkt ist nicht verfügbar
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BC856AS-7 BC856AS-7 DIODES INCORPORATED BC856AS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC856AW-7-F BC856AW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC856AQ-7-F BC856AQ-7-F DIODES INCORPORATED bc856_7_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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BC856ASQ-7-F BC856ASQ-7-F DIODES INCORPORATED BC856ASQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Produkt ist nicht verfügbar
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AP2115M-3.3TRG1 AP2115M-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
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BC847AQ-7-F ds11108.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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ZXMP6A18KTC ZXMP6A18K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN6040SSS-13 DMN6040SSS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG6602SVT-7 DMG6602SVT-7.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Power dissipation: 1.112W
Polarisation: unipolar
Drain current: 2.8/-3.4A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: TSOT26
On-state resistance: 0.06/0.095Ω
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AL1697-20CS7-13 AL1697.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Mounting: SMD
Output current: 2A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 7...25V DC
Topology: single transistor
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AL5890-15D-13 AL5890.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AP7363-25D-13 AP7363.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.5V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
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AP2141WG-7 AP2141-51.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP21410FM-7 AP21410_21510.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2141DFMG-7 AP2141D_51D.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2141DSG-13 AP2141D_51D.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2141FMG-7 AP2141-51.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DMN24H11DS-7 DMN24H11DS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN24H11DSQ-7 DMN24H11DSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN24H11DSQ-13 DMN24H11DSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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P4SMAJ20ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 20V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: D-FLAT
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Produkt ist nicht verfügbar
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DMP2021UTS-13 DMP2021UTS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Mounting: SMD
Pulsed drain current: -55A
Power dissipation: 1.3W
Gate charge: 59nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: TSSOP8
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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ZXMP6A17E6QTA ZXMP6A17E6Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel
Power dissipation: 1.92W
Pulsed drain current: -13.6A
Gate charge: 17.7nC
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
auf Bestellung 2954 Stücke:
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AP2552AW6-7 AP255x.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Output current: 2.1A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 135mΩ
Supply voltage: 2.7...5.5V DC
auf Bestellung 826 Stücke:
Lieferzeit 14-21 Tag (e)
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AP22802BW5-7 AP22802.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
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P4SMAJ70ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ZXGD3003E6TA ZXGD3003E6.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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FZT956TA FZT9556.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
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FZT958TA FZT958.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Current gain: 100...300
Frequency: 85MHz
auf Bestellung 724 Stücke:
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FZT956QTA FZT956.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Pulsed collector current: 5A
Application: automotive industry
Current gain: 10...300
Frequency: 110MHz
Produkt ist nicht verfügbar
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SBR60A300CT SBR60A300CT.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.94V
Max. forward impulse current: 235A
Kind of package: tube
Produkt ist nicht verfügbar
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SBR60A200CT SBR60A200CT.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.96V
Max. forward impulse current: 250A
Kind of package: tube
Produkt ist nicht verfügbar
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SMCJ150A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS16VV-7 BAS16VV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS16VVQ-7 BAS16VVQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C11SQ-7-F ds30093.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C11T-7 BZT52CxxT_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN3032LE-13 DMN3032LE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 29mΩ
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)
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2N7002EQ-7-F 2N7002EQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Gate charge: 0.5nC
Produkt ist nicht verfügbar
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DDZ27ASF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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B560CQ-13-F B520CQ-B560CQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape
Application: automotive industry
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.3nF
Type of diode: Schottky rectifying
Reverse recovery time: 16ns
Mounting: SMD
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DML1010FDK-7 DML1010FDK.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; U-DFN2020-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 8mΩ
Kind of package: reel; tape
Supply voltage: 0.8...4V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMBJ170A-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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ZTX601B ZTX600.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Kind of package: bulk
Frequency: 250MHz
Manufacturer standard package: 4000pcs.
Produkt ist nicht verfügbar
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ZTX603 ZTX602.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 1A
Manufacturer standard package: 4000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
Produkt ist nicht verfügbar
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ZTX601BSTZ ZTX600.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Manufacturer standard package: 2000pcs.
Produkt ist nicht verfügbar
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ZTX601STZ ZTX600.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Manufacturer standard package: 2000pcs.
Produkt ist nicht verfügbar
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ZTX603STZ ZTX602.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
Produkt ist nicht verfügbar
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DDC114YU-7-F DDC_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Collector current: 70mA
auf Bestellung 2467 Stücke:
Lieferzeit 14-21 Tag (e)
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DDC114EU-7-F DDC_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 10kΩ
Collector current: 50mA
auf Bestellung 1571 Stücke:
Lieferzeit 14-21 Tag (e)
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DMP3036SSS-13 DMP3036SSS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM4040D25FTA LM4040.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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LM4040D25QFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; SOT23
Type of integrated circuit: voltage reference source
Case: SOT23
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APX803S-40SA-7 APX803S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX803L20-18SA-7 APX803L.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.8V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX803S-44SA-7 APX803S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PDS760-13 PDS760.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 60V; 7A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 275A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMSZ5246B-7-F mmsz52xxb_Ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2024U-7 DMN2024U.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DDTC123JE-7-F ds30314.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
Frequency: 250MHz
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BC856AS-7 BC856AS.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC856AW-7-F BC856AW-BC858CW.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC856AQ-7-F bc856_7_8.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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BC856ASQ-7-F BC856ASQ.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Produkt ist nicht verfügbar
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AP2115M-3.3TRG1 AP2115.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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