DMP2023UFDF-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.42 EUR |
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Technische Details DMP2023UFDF-7 Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 730mW (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2023UFDF-7 nach Preis ab 0.47 EUR bis 1.64 EUR
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DMP2023UFDF-7 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 7.6A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3110 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2023UFDF-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 7.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 18+ | 1.03 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |