auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
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Technische Details DMN2025UFDF-7 Diodes Zetex
Description: MOSFET N-CH 20V 6.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V.
Weitere Produktangebote DMN2025UFDF-7 nach Preis ab 0.15 EUR bis 0.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN2025UFDF-7 | Hersteller : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
auf Bestellung 5956 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 6.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 6.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025UFDF-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 6.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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DMN2025UFDF-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 6.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMN2025UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Pulsed drain current: 30A Power dissipation: 1.6W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 60mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |