Technische Details DMT69M5LH3 Diodes Zetex
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 60A, Power dissipation: 3.3W, Case: TO251, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: THT, Gate charge: 28.4nC, Kind of channel: enhancement, Pulsed drain current: 300A, Kind of package: tube.
Weitere Produktangebote DMT69M5LH3 nach Preis ab 0.43 EUR bis 1.69 EUR
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DMT69M5LH3 | Hersteller : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 41V 60V TO251 TUBE 75PCS |
auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT69M5LH3 | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 3.3W Case: TO251 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 300A Kind of package: tube |
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