DMT69M5LH3 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.33 EUR |
| 75+ | 0.67 EUR |
| 525+ | 0.63 EUR |
| 1050+ | 0.52 EUR |
| 5025+ | 0.51 EUR |
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Technische Details DMT69M5LH3 Diodes Incorporated
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 60A, Power dissipation: 3.3W, Case: TO251, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: THT, Gate charge: 28.4nC, Kind of channel: enhancement, Pulsed drain current: 300A, Kind of package: tube.
Weitere Produktangebote DMT69M5LH3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMT69M5LH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 3.3W Case: TO251 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 300A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMT69M5LH3 |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH