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DMT3020LFDB-7 Diodes Incorporated


DMT3020LFDB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT3020LFDB-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 7.7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.7A, Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT3020LFDB-7 nach Preis ab 0.48 EUR bis 1.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMT3020LFDB-7 DMT3020LFDB-7 Diodes Incorporated DMT3020LFDB.pdf Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.06 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB-7 Diodes Incorporated DMT3020LFDB.pdf MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 1487 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.76 EUR
10+1.1 EUR
100+0.72 EUR
500+0.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.69 EUR
17+1.06 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 1487 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.76 EUR
10+1.1 EUR
100+0.72 EUR
500+0.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH