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DMT3003LFG-7 Diodes Incorporated


DMT3003LFG.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.52 EUR
4000+0.48 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT3003LFG-7 Diodes Incorporated

Description: MOSFET N-CH 30V 22A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.4W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT3003LFG-7 nach Preis ab 0.52 EUR bis 1.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMT3003LFG-7 DMT3003LFG-7 Diodes Incorporated DMT3003LFG.pdf Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5408 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3003LFG-7 DMT3003LFG-7 Diodes Incorporated DMT3003LFG.pdf MOSFETs MOSFET BVDSS: 31V-40V
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.97 EUR
10+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3003LFG-7 DMT3003LFG.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3003LFG-7 DMT3003LFG.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.97 EUR
10+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH