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DMN1008UFDFQ-13 DIODES INCORPORATED DMN1008UFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UFDE-7 DIODES INCORPORATED DMN1019UFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 41mΩ
Power dissipation: 0.69W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1019USN-13 DIODES INCORPORATED DMN1019USN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-13 DMN1019UVT-13 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-7 DMN1019UVT-7 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1025UFDB-7 DMN1025UFDB-7 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
400+ 0.18 EUR
450+ 0.16 EUR
515+ 0.14 EUR
545+ 0.13 EUR
Mindestbestellmenge: 315
DMN1029UFDB-13 DIODES INCORPORATED DMN1029UFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.8A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1029UFDB-7 DIODES INCORPORATED DMN1029UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Mounting: SMD
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 65mΩ
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1045UFR4-7 DIODES INCORPORATED DMN1045UFR4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: X2-DFN1010-3
Kind of package: reel; tape
Power dissipation: 1.26W
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1054UCB4-7 DIODES INCORPORATED DMN1054UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 8A
Power dissipation: 1.34W
Drain-source voltage: 8V
Drain current: 3.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-13 DIODES INCORPORATED DMN10H099SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-7 DIODES INCORPORATED DMN10H099SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H099SK3-13 DIODES INCORPORATED DMN10H099SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN10H100SK3-13 DIODES INCORPORATED DMN10H100SK3.pdf DMN10H100SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H120SE-13 DMN10H120SE-13 DIODES INCORPORATED DMN10H120SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-13 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-7 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H170SFDE-7 DIODES INCORPORATED DMN10H170SFDE.pdf DMN10H170SFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-13 DIODES INCORPORATED DMN10H170SFG.pdf DMN10H170SFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-7 DIODES INCORPORATED DMN10H170SFG.pdf DMN10H170SFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3-13 DIODES INCORPORATED DMN10H170SK3.pdf DMN10H170SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3Q-13 DIODES INCORPORATED DMN10H170SK3Q2.pdf DMN10H170SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-13 DIODES INCORPORATED DMN10H170SVT.pdf DMN10H170SVT-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-7 DIODES INCORPORATED DMN10H170SVT.pdf DMN10H170SVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVTQ-7 DIODES INCORPORATED DMN10H170SVTQ.pdf DMN10H170SVTQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H220L-13 DMN10H220L-13 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN10H220L-7 DMN10H220L-7 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
160+0.44 EUR
365+ 0.2 EUR
Mindestbestellmenge: 160
DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN10H220LFVW-7 DIODES INCORPORATED DMN10H220LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LK3-13 DMN10H220LK3-13 DIODES INCORPORATED DMN10H220LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2497 Stücke:
Lieferzeit 7-14 Tag (e)
207+0.35 EUR
262+ 0.27 EUR
296+ 0.24 EUR
350+ 0.2 EUR
370+ 0.19 EUR
Mindestbestellmenge: 207
DMN10H220LPDW-13 DIODES INCORPORATED DMN10H220LPDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LQ-7 DMN10H220LQ-7 DIODES INCORPORATED DMN10H220LQ-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.24 EUR
515+ 0.14 EUR
575+ 0.12 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 305
DMN10H220LVT-7 DMN10H220LVT-7 DIODES INCORPORATED DMN10H220LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Pulsed drain current: 6.6A
Drain-source voltage: 100V
Drain current: 1.79A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.07W
Polarisation: unipolar
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H700S-13 DIODES INCORPORATED DMN10H700S.pdf DMN10H700S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H700S-7 DIODES INCORPORATED DMN10H700S.pdf DMN10H700S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN1150UFB-7B DIODES INCORPORATED DMN1150UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 1.15A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 7A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1150UFL3-7 DIODES INCORPORATED DMN1150UFL3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Case: X2-DFN1310-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1250UFEL-7 DIODES INCORPORATED DMN1250UFEL.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W
Case: U-QFN1515-12
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET x8
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 1.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1260UFA-7B DIODES INCORPORATED DMN1260UFA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 500mA; Idm: 1.5A; 360mW
Mounting: SMD
Kind of package: reel; tape
Gate charge: 960pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Case: X2-DFN0806-3
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN12M7UCA10-7 DIODES INCORPORATED DMN12M7UCA10.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.8A
Pulsed drain current: 80A
Power dissipation: 1.73W
Case: X4-DSN3015-10
Gate-source voltage: ±8V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 35.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DMN13H750S-13 DIODES INCORPORATED DMN13H750S.pdf DMN13H750S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN13H750S-7 DIODES INCORPORATED DMN13H750S.pdf DMN13H750S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN15H310SE-13 DIODES INCORPORATED DMN15H310SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Pulsed drain current: 10A
Power dissipation: 1.2W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN15H310SK3-13 DIODES INCORPORATED DMN15H310SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 150V
Drain current: 5.2A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN2004DMK-7 DMN2004DMK-7 DIODES INCORPORATED ds30937.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26
Case: SOT26
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004DWK-7 DMN2004DWK-7 DIODES INCORPORATED ds30935.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004DWKQ-7 DMN2004DWKQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004K-7 DMN2004K-7 DIODES INCORPORATED DMN2004K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.35W
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.45A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1615 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
545+ 0.13 EUR
620+ 0.12 EUR
705+ 0.1 EUR
750+ 0.096 EUR
Mindestbestellmenge: 295
DMN2004TK-7 DMN2004TK-7 DIODES INCORPORATED ds30936.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523
Case: SOT523
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.15W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004VK-7 DMN2004VK-7 DIODES INCORPORATED DMN2004VK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563
Case: SOT563
Mounting: SMD
On-state resistance: 0.4Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN2004WK-7 DMN2004WK-7 DIODES INCORPORATED ds30934.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN2004WKQ-7 DMN2004WKQ-7 DIODES INCORPORATED DMN2004WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN2005DLP4K-7 DIODES INCORPORATED ds30801.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1310-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 0.4W
Case: X2-DFN1310-6
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005LP4K-7 DIODES INCORPORATED ds30799.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 0.4W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005LPK-7 DMN2005LPK-7 DIODES INCORPORATED DMN2005LPK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1175 Stücke:
Lieferzeit 7-14 Tag (e)
447+0.16 EUR
544+ 0.13 EUR
610+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 447
DMN2005UFG-13 DIODES INCORPORATED DMN2005UFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 40A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.05W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005UFG-7 DIODES INCORPORATED DMN2005UFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 14A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.27W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005UFGQ-13 DIODES INCORPORATED DMN2005UFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 14A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.27W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN2005UPS-13 DIODES INCORPORATED DMN2005UPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 150A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 150A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN1008UFDFQ-13 DMN1008UFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UFDE-7 DMN1019UFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 41mΩ
Power dissipation: 0.69W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1019USN-13 DMN1019USN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-13 DMN1019UVT.pdf
DMN1019UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1025UFDB-7
DMN1025UFDB-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
400+ 0.18 EUR
450+ 0.16 EUR
515+ 0.14 EUR
545+ 0.13 EUR
Mindestbestellmenge: 315
DMN1029UFDB-13 DMN1029UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.8A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1029UFDB-7 DMN1029UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Mounting: SMD
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 65mΩ
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1045UFR4-7 DMN1045UFR4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: X2-DFN1010-3
Kind of package: reel; tape
Power dissipation: 1.26W
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1054UCB4-7 DMN1054UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 8A
Power dissipation: 1.34W
Drain-source voltage: 8V
Drain current: 3.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-13 DMN10H099SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-7 DMN10H099SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H099SK3-13 DMN10H099SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN10H100SK3-13 DMN10H100SK3.pdf
Hersteller: DIODES INCORPORATED
DMN10H100SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H120SE-13 DMN10H120SE.pdf
DMN10H120SE-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-13 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-7 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H170SFDE-7 DMN10H170SFDE.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-13 DMN10H170SFG.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-7 DMN10H170SFG.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3-13 DMN10H170SK3.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3Q-13 DMN10H170SK3Q2.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-13 DMN10H170SVT.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SVT-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-7 DMN10H170SVT.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVTQ-7 DMN10H170SVTQ.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SVTQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN10H220L-7 DMN10H220L.pdf
DMN10H220L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
160+0.44 EUR
365+ 0.2 EUR
Mindestbestellmenge: 160
DMN10H220LE-13 DMN10H220LE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LFDF-7 DMN10H220LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN10H220LFVW-7 DMN10H220LFVW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LK3-13 DMN10H220LK3.pdf
DMN10H220LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2497 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
207+0.35 EUR
262+ 0.27 EUR
296+ 0.24 EUR
350+ 0.2 EUR
370+ 0.19 EUR
Mindestbestellmenge: 207
DMN10H220LPDW-13 DMN10H220LPDW.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LQ-7 DMN10H220LQ-7.pdf
DMN10H220LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
305+0.24 EUR
515+ 0.14 EUR
575+ 0.12 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 305
DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Pulsed drain current: 6.6A
Drain-source voltage: 100V
Drain current: 1.79A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.07W
Polarisation: unipolar
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H700S-13 DMN10H700S.pdf
Hersteller: DIODES INCORPORATED
DMN10H700S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H700S-7 DMN10H700S.pdf
Hersteller: DIODES INCORPORATED
DMN10H700S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN1150UFB-7B DMN1150UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 1.15A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 7A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1150UFL3-7 DMN1150UFL3.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Case: X2-DFN1310-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1250UFEL-7 DMN1250UFEL.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W
Case: U-QFN1515-12
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET x8
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 1.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1260UFA-7B DMN1260UFA.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 500mA; Idm: 1.5A; 360mW
Mounting: SMD
Kind of package: reel; tape
Gate charge: 960pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Case: X2-DFN0806-3
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN12M7UCA10-7 DMN12M7UCA10.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.8A
Pulsed drain current: 80A
Power dissipation: 1.73W
Case: X4-DSN3015-10
Gate-source voltage: ±8V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 35.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DMN13H750S-13 DMN13H750S.pdf
Hersteller: DIODES INCORPORATED
DMN13H750S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN13H750S-7 DMN13H750S.pdf
Hersteller: DIODES INCORPORATED
DMN13H750S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN15H310SE-13 DMN15H310SE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Pulsed drain current: 10A
Power dissipation: 1.2W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN15H310SK3-13 DMN15H310SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 150V
Drain current: 5.2A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN2004DMK-7 ds30937.pdf
DMN2004DMK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26
Case: SOT26
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004DWK-7 ds30935.pdf
DMN2004DWK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004DWKQ-7
DMN2004DWKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004K-7 DMN2004K.pdf
DMN2004K-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.35W
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.45A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1615 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
545+ 0.13 EUR
620+ 0.12 EUR
705+ 0.1 EUR
750+ 0.096 EUR
Mindestbestellmenge: 295
DMN2004TK-7 ds30936.pdf
DMN2004TK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523
Case: SOT523
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.15W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2004VK-7 DMN2004VK.pdf
DMN2004VK-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563
Case: SOT563
Mounting: SMD
On-state resistance: 0.4Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN2004WK-7 ds30934.pdf
DMN2004WK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN2004WKQ-7 DMN2004WKQ.pdf
DMN2004WKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN2005DLP4K-7 ds30801.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1310-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 0.4W
Case: X2-DFN1310-6
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005LP4K-7 ds30799.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 0.4W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005LPK-7 DMN2005LPK.pdf
DMN2005LPK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1175 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
447+0.16 EUR
544+ 0.13 EUR
610+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 447
DMN2005UFG-13 DMN2005UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 40A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.05W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005UFG-7 DMN2005UFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 14A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.27W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN2005UFGQ-13 DMN2005UFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 14A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.27W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN2005UPS-13 DMN2005UPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 150A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 150A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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