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DDTA114EUA-7 DDTA114EUA-7 Diodes Incorporated ds30325.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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NX22A0001Z NX22A0001Z Diodes Incorporated NX22A0001Z.pdf Description: XTAL OSC XO 100.0000MHZ LVPECL
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NX22A0001Z NX22A0001Z Diodes Incorporated NX22A0001Z.pdf Description: XTAL OSC XO 100.0000MHZ LVPECL
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74AUP2G07FW3-7 74AUP2G07FW3-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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DFLS240L-7-G DFLS240L-7-G Diodes Incorporated Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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DMNH6042SPDQ-13 DMNH6042SPDQ-13 Diodes Incorporated DMNH6042SPDQ.pdf Description: MOSFET NCH 60V 5.7A POWERDI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMNH6042SPDQ-13 DMNH6042SPDQ-13 Diodes Incorporated DMNH6042SPDQ.pdf Description: MOSFET NCH 60V 5.7A POWERDI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMNH6042SPSQ-13 DMNH6042SPSQ-13 Diodes Incorporated DMNH6042SPSQ.pdf Description: MOSFET N-CH 60V 24A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMNH6042SPSQ-13 DMNH6042SPSQ-13 Diodes Incorporated DMNH6042SPSQ.pdf Description: MOSFET N-CH 60V 24A PWRDI5060-8
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
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AP130-30RG-7 AP130-30RG-7 Diodes Incorporated AP130.pdf Description: IC REG LDO 300MA 3.0V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-15RG-7 AP130-15RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 1.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-18RG-7 AP130-18RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 1.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-35RG-7 AP130-35RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 3.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-28RG-7 AP130-28RG-7 Diodes Incorporated AP130.pdf Description: IC REG LINEAR 2.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 2.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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MMSZ5230BQ-7-F MMSZ5230BQ-7-F Diodes Incorporated ds18010.pdf Description: ZENER DIODE SOD123 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 370 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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MMSZ5232BQ-7-F MMSZ5232BQ-7-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.6V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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DMT3006LFV-7 DMT3006LFV-7 Diodes Incorporated DMT3006LFV.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT3006LFDFQ-7 DMT3006LFDFQ-7 Diodes Incorporated DMT3006LFDFQ.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LFG-13 DMT3006LFG-13 Diodes Incorporated DMT3006LFG.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LFVQ-13 DMT3006LFVQ-13 Diodes Incorporated DMT3006LFVQ.pdf Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
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BZX84B12Q-7-F BZX84B12Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 12V 300MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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SBRT20U60CT Diodes Incorporated SBRT20U60CT.pdf Description: DIODE ARRAY SCHOTTKY
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SBR20U60CTFP-G SBR20U60CTFP-G Diodes Incorporated SBR20U60.pdf Description: DIODE ARRAY SBR 60V 10A ITO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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SBR20U60CTFP-JT SBR20U60CTFP-JT Diodes Incorporated SBR20U60CT.pdf Description: DIODE ARRAY SCHOTTKY
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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SBR20U60CT-G Diodes Incorporated SBR20U60.pdf Description: DIODE ARRAY SBR 60V 10A TO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SBR20U60CT-01 Diodes Incorporated Description: DIODE ARRAY SBR 60V 20A TO-220-3
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SBRT20U60CTFP SBRT20U60CTFP Diodes Incorporated SBRT20U60CT.pdf Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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ZNBG4003JA16TC ZNBG4003JA16TC Diodes Incorporated ZNBG4003.pdf Description: LNB FIXED BIAS U-QFN3030-16
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ZABG6004Q20TC ZABG6004Q20TC Diodes Incorporated ZABG6004.pdf Description: IC CTRLR BIAS FET QSOP-20
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ZABG6004Q20TC ZABG6004Q20TC Diodes Incorporated ZABG6004.pdf Description: IC CTRLR BIAS FET QSOP-20
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ZABG6003JB20TC ZABG6003JB20TC Diodes Incorporated ZABG6003.pdf Description: IC FET BIAS CTLR 6STAGE 20QFN
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ZABG6003Q20TC ZABG6003Q20TC Diodes Incorporated ZABG6003.pdf Description: IC FET BIAS CTLR 6STAGE 20QSOP
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DSS4140V-7 DSS4140V-7 Diodes Incorporated ds31655.pdf Description: TRANS NPN 40V 1A SOT563
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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BSS138K-7 BSS138K-7 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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BSS138K-7 BSS138K-7 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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BSS138DWQ-13 BSS138DWQ-13 Diodes Incorporated BSS138DWQ.pdf Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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BSS138DWQ-13 BSS138DWQ-13 Diodes Incorporated BSS138DWQ.pdf Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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US1JDF-13 US1JDF-13 Diodes Incorporated US1JDF.pdf Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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US1JDF-13 US1JDF-13 Diodes Incorporated US1JDF.pdf Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AZ1117CH2-3.3TRG1 AZ1117CH2-3.3TRG1 Diodes Incorporated AZ1117C.pdf Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AZ1117CH2-3.3TRG1 AZ1117CH2-3.3TRG1 Diodes Incorporated AZ1117C.pdf Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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DSC02120 DSC02120 Diodes Incorporated DSC02120.pdf Description: DIODE SIL CARB 1.2KV 2A TO220AC
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO220AC (Type WX)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 130pF @ 100mV, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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DSC02120FP DSC02120FP Diodes Incorporated DSC02120FP.pdf Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC (Type WX)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 132pF @ 100mV, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
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DMTH4002SCTBQ-13 DMTH4002SCTBQ-13 Diodes Incorporated DMTH4002SCTBQ.pdf Description: MOSFET BVDSS: 31V~40V TO263 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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DMTH4002SCTB-13 Diodes Incorporated DMTH4002SCTB.pdf Description: MOSFET BVDSS: 31V~40V TO263 T&R
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G20H100CTW G20H100CTW Diodes Incorporated G20H100CTW.pdf Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
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G20H100CTFW G20H100CTFW Diodes Incorporated G20H100CTFW.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
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BCP5616TTA BCP5616TTA Diodes Incorporated BCP5616T.pdf Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.5 W
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BCP5616QTC BCP5616QTC Diodes Incorporated BCP5416Q_BCP5616Q.pdf Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
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AP2162SG-13 AP2162SG-13 Diodes Incorporated AP2162_72.pdf Description: IC PWR SWITCH P-CHANNEL 1:2 8SOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP
Ratio - Input:Output: 1:2
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Tape & Reel (TR)
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AP2162SG-13 AP2162SG-13 Diodes Incorporated AP2162_72.pdf Description: IC PWR SWITCH P-CHANNEL 1:2 8SOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP
Ratio - Input:Output: 1:2
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
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1N4148WSQ-7-F 1N4148WSQ-7-F Diodes Incorporated 1N4148WS_BAV16WS.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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1N4148WSQ-7-F 1N4148WSQ-7-F Diodes Incorporated 1N4148WS_BAV16WS.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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DMT4003SCT DMT4003SCT Diodes Incorporated DMT4003SCT.pdf Description: MOSFET N-CH 40V 205A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PI3LVD512ZFE PI3LVD512ZFE Diodes Incorporated PI3LVD512.pdf Description: IC MUX/DEMUX 5 X 4:2 56TQFN
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PI3LVD512ZFEX PI3LVD512ZFEX Diodes Incorporated PI3LVD512.pdf Description: IC MUX/DEMUX 5 X 4:2 56TQFN
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74LVC1T45DW-7 74LVC1T45DW-7 Diodes Incorporated 74LVC1T45.pdf Description: IC XLTR VL BIDIR SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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74LVC1T45DW-7 74LVC1T45DW-7 Diodes Incorporated 74LVC1T45.pdf Description: IC XLTR VL BIDIR SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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SDM20U30LPQ-7 SDM20U30LPQ-7 Diodes Incorporated SDM20U30LPQ.pdf Description: DIODE SCHOT 30V 200MA X1DFN10062
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 575 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: X1-DFN1006-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SDM20U30LPQ-7 SDM20U30LPQ-7 Diodes Incorporated SDM20U30LPQ.pdf Description: DIODE SCHOT 30V 200MA X1DFN10062
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 575 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: X1-DFN1006-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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DDTA114EUA-7 ds30325.pdf
DDTA114EUA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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NX22A0001Z NX22A0001Z.pdf
NX22A0001Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 100.0000MHZ LVPECL
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NX22A0001Z NX22A0001Z.pdf
NX22A0001Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 100.0000MHZ LVPECL
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74AUP2G07FW3-7 74AUP2G07.pdf
74AUP2G07FW3-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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DFLS240L-7-G
DFLS240L-7-G
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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DMNH6042SPDQ-13 DMNH6042SPDQ.pdf
DMNH6042SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 60V 5.7A POWERDI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMNH6042SPDQ-13 DMNH6042SPDQ.pdf
DMNH6042SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 60V 5.7A POWERDI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMNH6042SPSQ-13 DMNH6042SPSQ.pdf
DMNH6042SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMNH6042SPSQ-13 DMNH6042SPSQ.pdf
DMNH6042SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
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AP130-30RG-7 AP130.pdf
AP130-30RG-7
Hersteller: Diodes Incorporated
Description: IC REG LDO 300MA 3.0V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-15RG-7 AP130.pdf
AP130-15RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-18RG-7 AP130.pdf
AP130-18RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 1.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP130-35RG-7 AP130.pdf
AP130-35RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.5V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 3.5V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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3000+0.61 EUR
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AP130-28RG-7 AP130.pdf
AP130-28RG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.8V 300MA SC59R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-59R
Voltage - Output (Min/Fixed): 2.8V
PSRR: 58dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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MMSZ5230BQ-7-F ds18010.pdf
MMSZ5230BQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 370 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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3000+0.065 EUR
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MMSZ5232BQ-7-F ds18010.pdf
MMSZ5232BQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
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DMT3006LFV-7 DMT3006LFV.pdf
DMT3006LFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
DMT3006LFDFQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LFG-13 DMT3006LFG.pdf
DMT3006LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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3000+0.64 EUR
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DMT3006LFVQ-13 DMT3006LFVQ.pdf
DMT3006LFVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12Q-7-F BZX84Bxxx.pdf
BZX84B12Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 300MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 42000 Stücke:
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3000+0.069 EUR
6000+0.062 EUR
9000+0.057 EUR
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30000+0.049 EUR
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SBRT20U60CT SBRT20U60CT.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SBR20U60CTFP-G SBR20U60.pdf
SBR20U60CTFP-G
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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SBR20U60CTFP-JT SBR20U60CT.pdf
SBR20U60CTFP-JT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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SBR20U60CT-G SBR20U60.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A TO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SBR20U60CT-01
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 20A TO-220-3
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SBRT20U60CTFP SBRT20U60CT.pdf
SBRT20U60CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Produkt ist nicht verfügbar
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ZNBG4003JA16TC ZNBG4003.pdf
ZNBG4003JA16TC
Hersteller: Diodes Incorporated
Description: LNB FIXED BIAS U-QFN3030-16
Produkt ist nicht verfügbar
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ZABG6004Q20TC ZABG6004.pdf
ZABG6004Q20TC
Hersteller: Diodes Incorporated
Description: IC CTRLR BIAS FET QSOP-20
Produkt ist nicht verfügbar
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ZABG6004Q20TC ZABG6004.pdf
ZABG6004Q20TC
Hersteller: Diodes Incorporated
Description: IC CTRLR BIAS FET QSOP-20
Produkt ist nicht verfügbar
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ZABG6003JB20TC ZABG6003.pdf
ZABG6003JB20TC
Hersteller: Diodes Incorporated
Description: IC FET BIAS CTLR 6STAGE 20QFN
Produkt ist nicht verfügbar
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ZABG6003Q20TC ZABG6003.pdf
ZABG6003Q20TC
Hersteller: Diodes Incorporated
Description: IC FET BIAS CTLR 6STAGE 20QSOP
Produkt ist nicht verfügbar
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DSS4140V-7 ds31655.pdf
DSS4140V-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 1A SOT563
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
30000+0.12 EUR
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BSS138K-7 BSS138K.pdf
BSS138K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Produkt ist nicht verfügbar
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BSS138K-7 BSS138K.pdf
BSS138K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Produkt ist nicht verfügbar
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BSS138DWQ-13 BSS138DWQ.pdf
BSS138DWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138DWQ-13 BSS138DWQ.pdf
BSS138DWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 149 Stücke:
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29+0.74 EUR
35+0.61 EUR
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US1JDF-13 US1JDF.pdf
US1JDF-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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US1JDF-13 US1JDF.pdf
US1JDF-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3649 Stücke:
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21+1 EUR
34+0.63 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
2000+0.24 EUR
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AZ1117CH2-3.3TRG1 AZ1117C.pdf
AZ1117CH2-3.3TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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AZ1117CH2-3.3TRG1 AZ1117C.pdf
AZ1117CH2-3.3TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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50+0.42 EUR
76+0.27 EUR
85+0.25 EUR
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DSC02120 DSC02120.pdf
DSC02120
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A TO220AC
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO220AC (Type WX)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 130pF @ 100mV, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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3+7.06 EUR
10+6.33 EUR
100+5.19 EUR
500+4.41 EUR
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DSC02120FP DSC02120FP.pdf
DSC02120FP
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC (Type WX)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 132pF @ 100mV, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
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3+7.25 EUR
50+5.75 EUR
100+4.93 EUR
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DMTH4002SCTBQ-13 DMTH4002SCTBQ.pdf
DMTH4002SCTBQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO263 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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800+1.73 EUR
1600+1.59 EUR
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DMTH4002SCTB-13 DMTH4002SCTB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO263 T&R
Produkt ist nicht verfügbar
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G20H100CTW G20H100CTW.pdf
G20H100CTW
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3398 Stücke:
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12+1.82 EUR
50+0.71 EUR
100+0.62 EUR
1000+0.6 EUR
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G20H100CTFW G20H100CTFW.pdf
G20H100CTFW
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Qualification: AEC-Q101
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17+1.3 EUR
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500+0.56 EUR
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BCP5616TTA BCP5616T.pdf
BCP5616TTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.5 W
Produkt ist nicht verfügbar
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BCP5616QTC BCP5416Q_BCP5616Q.pdf
BCP5616QTC
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AP2162SG-13 AP2162_72.pdf
AP2162SG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:2 8SOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP
Ratio - Input:Output: 1:2
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP2162SG-13 AP2162_72.pdf
AP2162SG-13
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:2 8SOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP
Ratio - Input:Output: 1:2
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 11083 Stücke:
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AnzahlPrivatkunde
8+2.73 EUR
10+2.45 EUR
25+2.32 EUR
100+1.9 EUR
250+1.78 EUR
500+1.58 EUR
1000+1.25 EUR
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1N4148WSQ-7-F 1N4148WS_BAV16WS.pdf
1N4148WSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4148WSQ-7-F 1N4148WS_BAV16WS.pdf
1N4148WSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 1037 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
83+0.25 EUR
102+0.2 EUR
117+0.18 EUR
135+0.15 EUR
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DMT4003SCT DMT4003SCT.pdf
DMT4003SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 205A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 50 Stücke:
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7+3.12 EUR
10+2.78 EUR
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PI3LVD512ZFE PI3LVD512.pdf
PI3LVD512ZFE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 5 X 4:2 56TQFN
Produkt ist nicht verfügbar
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PI3LVD512ZFEX PI3LVD512.pdf
PI3LVD512ZFEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 5 X 4:2 56TQFN
Produkt ist nicht verfügbar
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74LVC1T45DW-7 74LVC1T45.pdf
74LVC1T45DW-7
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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74LVC1T45DW-7 74LVC1T45.pdf
74LVC1T45DW-7
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 723 Stücke:
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63+0.33 EUR
94+0.23 EUR
107+0.19 EUR
117+0.18 EUR
126+0.17 EUR
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SDM20U30LPQ-7 SDM20U30LPQ.pdf
SDM20U30LPQ-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOT 30V 200MA X1DFN10062
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 575 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: X1-DFN1006-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 783000 Stücke:
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3000+0.12 EUR
6000+0.12 EUR
9000+0.11 EUR
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SDM20U30LPQ-7 SDM20U30LPQ.pdf
SDM20U30LPQ-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOT 30V 200MA X1DFN10062
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 575 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: X1-DFN1006-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 787424 Stücke:
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39+0.55 EUR
57+0.37 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.2 EUR
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