DMP3008SFGQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details DMP3008SFGQ-13 Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote DMP3008SFGQ-13 nach Preis ab 0.72 EUR bis 2.92 EUR
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DMP3008SFGQ-13 | Diodes Incorporated |
MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A |
auf Bestellung 8753 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3008SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 4650 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP3008SFGQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A
MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A
auf Bestellung 8753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.36 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.85 EUR |
| 3000+ | 0.72 EUR |
| DMP3008SFGQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.91 EUR |