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PI6LC48H02QLIEX Diodes Incorporated PI6LC48H02Q.pdf Description: CLOCK GENERATOR TSSOP-16 T&R 2.5
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PI6LC48P0101LIEX PI6LC48P0101LIEX Diodes Incorporated PI6LC48L0201.pdf Description: HIFLEX 10GBE CLOCK GENERATOR
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PI6LC48C21LIEX PI6LC48C21LIEX Diodes Incorporated PI6LC48C21.pdf Description: 125MHZ CMOS SYNTHESIZER
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PI6LC48P25104LEX PI6LC48P25104LEX Diodes Incorporated PI6LC48P25104.pdf Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48P25104LIEX PI6LC48P25104LIEX Diodes Incorporated PI6LC48P25104.pdf Description: 156.25MHZ LVPECL SYNTHESIZER
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PI6LC48C21LEX PI6LC48C21LEX Diodes Incorporated PI6LC48C21.pdf Description: 125MHZ CMOS SYNTHESIZER
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PI6LC48P03AZHIE PI6LC48P03AZHIE Diodes Incorporated PI6LC48P03A.pdf Description: 3-OUTPUT LVPECL NETWORKING CLOCK
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D3V3H1U2LP-7B D3V3H1U2LP-7B Diodes Incorporated D3V3H1U2LP.pdf Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
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D3V3H1U2LP-7B D3V3H1U2LP-7B Diodes Incorporated D3V3H1U2LP.pdf Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
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LSP78L05AATB LSP78L05AATB Diodes Incorporated Description: IC REGULATOR
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.8V @ 100mA
Protection Features: Over Temperature, Short Circuit
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P6SMAJ33ADFQ-13 P6SMAJ33ADFQ-13 Diodes Incorporated P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Description: TVS DIODE 33VWM 53.3VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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FS2MED-7 FS2MED-7 Diodes Incorporated FS2MED.pdf Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FS2MED-7 FS2MED-7 Diodes Incorporated FS2MED.pdf Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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ZXMN10A11K ZXMN10A11K Diodes Incorporated ZXMN10A11K.pdf Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A11K ZXMN10A11K Diodes Incorporated ZXMN10A11K.pdf Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A08E6QTA ZXMN10A08E6QTA Diodes Incorporated Description: MOSFET BVDSS: 61V~100V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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DDZX9V1CQ-7 DDZX9V1CQ-7 Diodes Incorporated Description: DIODE ZENER 9.1V 300MW SOT23
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SBR1045SP5-7D SBR1045SP5-7D Diodes Incorporated Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Produkt ist nicht verfügbar
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BZX84C7V5Q-13-F BZX84C7V5Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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BZX84C7V5Q-7-F BZX84C7V5Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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AP7353-25FS4-7 AP7353-25FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 2.5V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.168V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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AP7353-33FS4-7 AP7353-33FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 3.3V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.142V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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AP7353-18FS4-7 AP7353-18FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 1.8V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.24V @ 250mA
Protection Features: Over Current, Over Temperature
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AP7353-18FS4-7 AP7353-18FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 1.8V 250MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.24V @ 250mA
Protection Features: Over Current, Over Temperature
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AP7353-28FS4-7 AP7353-28FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 2.8V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.155V @ 250mA
Protection Features: Over Current, Over Temperature
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SBRT4M30LP-7 SBRT4M30LP-7 Diodes Incorporated Description: DIODE SBR 30V 4A 8DFN
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LM4040C30QFTA LM4040C30QFTA Diodes Incorporated Description: IC VREF SHUNT 3V SOT23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 10Hz to 10kHz: 35µVrms
Grade: Automotive
Current - Cathode: 70 µA
Current - Output: 15 mA
Qualification: AEC-Q100
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AL3022MTR-AG1 AL3022MTR-AG1 Diodes Incorporated Description: IC LED DRIVER CTRLR PWM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.2V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 140kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 18V
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AL3022MTR-BG1 AL3022MTR-BG1 Diodes Incorporated Description: IC LED DRIVER CTRLR PWM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.2V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 140kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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FH1600059 FH1600059 Diodes Incorporated FH.pdf Description: CRYSTAL 16.0000MHZ 16PF SMD
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BAS16VVQ-7 BAS16VVQ-7 Diodes Incorporated BAS16VVQ.pdf Description: DIODE ARRAY GP 100V 200MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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DMT3009UFVW-13 DMT3009UFVW-13 Diodes Incorporated DMT3009UFVW.pdf Description: MOSFET N-CH 30V 10.6A/30A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
Produkt ist nicht verfügbar
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DMT3009UFVW-7 DMT3009UFVW-7 Diodes Incorporated DMT3009UFVW.pdf Description: MOSFET N-CH 30V 10.6A/30A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
Produkt ist nicht verfügbar
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ADTC143ECAQ-7 ADTC143ECAQ-7 Diodes Incorporated ADTC143ECAQ.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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FMMT620QTA FMMT620QTA Diodes Incorporated FMMT620.pdf Description: SS LOW SAT TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Qualification: AEC-Q101
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TLC271BIS-13 TLC271BIS-13 Diodes Incorporated TLC271.pdf Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 950µA
Slew Rate: 4.6V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 0.7 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
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SMCJ11CAQ-13-F SMCJ11CAQ-13-F Diodes Incorporated SMCJ5.0CAQ_SMCJ110CAQ.pdf Description: TVS DIODE 11VWM 18.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ48CAQ-13-F SMAJ48CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ADTC114ECAQ-13 ADTC114ECAQ-13 Diodes Incorporated ADTC114ECAQ.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114ECAQ-13-F DDTC114ECAQ-13-F Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114ECAQ-7-F DDTC114ECAQ-7-F Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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MURS320 MURS320 Diodes Incorporated ds30197.pdf Description: DIODE GEN PURP 200V 3A SMC TR 3K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SBR20A100CTFP-JT SBR20A100CTFP-JT Diodes Incorporated Description: DIODE ARRAY SBR 100V ITO-220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SBR20A100CT-E1 Diodes Incorporated Description: DIODE ARRAY SBR 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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DCX114YUQ-7-F DCX114YUQ-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMN2450UFB4Q-7B DMN2450UFB4Q-7B Diodes Incorporated DMN2450UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
Qualification: AEC-Q101
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DMN2029UVT-7 DMN2029UVT-7 Diodes Incorporated DMN2029UVT.pdf Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
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DMN2029UVT-13 DMN2029UVT-13 Diodes Incorporated DMN2029UVT.pdf Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
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PT8A3281WEX PT8A3281WEX Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER SO-8
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PT8A3281WE PT8A3281WE Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER SO-8
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PT8A3281PEX PT8A3281PEX Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER DIP-8
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PT8A3281PE PT8A3281PE Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER DIP-8
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DMN2710UTQ-7 DMN2710UTQ-7 Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UTQ-7 DMN2710UTQ-7 Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UTQ-13 DMN2710UTQ-13 Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UWQ-13 DMN2710UWQ-13 Diodes Incorporated DMN2710UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UW-7 DMN2710UW-7 Diodes Incorporated DMN2710UW.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
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DMN2710UWQ-7 DMN2710UWQ-7 Diodes Incorporated DMN2710UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UW-13 DMN2710UW-13 Diodes Incorporated DMN2710UW.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2710UT-7 DMN2710UT-7 Diodes Incorporated DMN2710UT.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
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PI6LC48H02QLIEX PI6LC48H02Q.pdf
Hersteller: Diodes Incorporated
Description: CLOCK GENERATOR TSSOP-16 T&R 2.5
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PI6LC48P0101LIEX PI6LC48L0201.pdf
PI6LC48P0101LIEX
Hersteller: Diodes Incorporated
Description: HIFLEX 10GBE CLOCK GENERATOR
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PI6LC48C21LIEX PI6LC48C21.pdf
PI6LC48C21LIEX
Hersteller: Diodes Incorporated
Description: 125MHZ CMOS SYNTHESIZER
Produkt ist nicht verfügbar
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PI6LC48P25104LEX PI6LC48P25104.pdf
PI6LC48P25104LEX
Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48P25104LIEX PI6LC48P25104.pdf
PI6LC48P25104LIEX
Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
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PI6LC48C21LEX PI6LC48C21.pdf
PI6LC48C21LEX
Hersteller: Diodes Incorporated
Description: 125MHZ CMOS SYNTHESIZER
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PI6LC48P03AZHIE PI6LC48P03A.pdf
PI6LC48P03AZHIE
Hersteller: Diodes Incorporated
Description: 3-OUTPUT LVPECL NETWORKING CLOCK
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D3V3H1U2LP-7B D3V3H1U2LP.pdf
D3V3H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
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D3V3H1U2LP-7B D3V3H1U2LP.pdf
D3V3H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
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43+0.41 EUR
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500+0.19 EUR
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LSP78L05AATB
LSP78L05AATB
Hersteller: Diodes Incorporated
Description: IC REGULATOR
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.8V @ 100mA
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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P6SMAJ33ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
P6SMAJ33ADFQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS2MED-7 FS2MED.pdf
FS2MED-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FS2MED-7 FS2MED.pdf
FS2MED-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2080 Stücke:
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27+0.67 EUR
37+0.48 EUR
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500+0.21 EUR
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ZXMN10A11K ZXMN10A11K.pdf
ZXMN10A11K
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A11K ZXMN10A11K.pdf
ZXMN10A11K
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A08E6QTA
ZXMN10A08E6QTA
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Produkt ist nicht verfügbar
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DDZX9V1CQ-7
DDZX9V1CQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Produkt ist nicht verfügbar
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SBR1045SP5-7D
SBR1045SP5-7D
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Produkt ist nicht verfügbar
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BZX84C7V5Q-13-F ds18001.pdf
BZX84C7V5Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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10000+0.062 EUR
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BZX84C7V5Q-7-F ds18001.pdf
BZX84C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.044 EUR
9000+0.036 EUR
15000+0.035 EUR
21000+0.034 EUR
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AP7353-25FS4-7 AP7353.pdf
AP7353-25FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.5V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.168V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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Anzahl Preis
5000+0.17 EUR
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AP7353-33FS4-7 AP7353.pdf
AP7353-33FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.142V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 55000 Stücke:
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Anzahl Preis
5000+0.21 EUR
10000+0.19 EUR
25000+0.18 EUR
50000+0.17 EUR
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AP7353-18FS4-7 AP7353.pdf
AP7353-18FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.24V @ 250mA
Protection Features: Over Current, Over Temperature
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Anzahl Preis
5000+0.22 EUR
10000+0.2 EUR
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AP7353-18FS4-7 AP7353.pdf
AP7353-18FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 250MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.24V @ 250mA
Protection Features: Over Current, Over Temperature
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
27+0.66 EUR
30+0.61 EUR
100+0.45 EUR
250+0.41 EUR
500+0.34 EUR
1000+0.25 EUR
2500+0.23 EUR
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AP7353-28FS4-7 AP7353.pdf
AP7353-28FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.8V 250MA 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.155V @ 250mA
Protection Features: Over Current, Over Temperature
auf Bestellung 60000 Stücke:
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Anzahl Preis
5000+0.22 EUR
10000+0.2 EUR
Mindestbestellmenge: 5000
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SBRT4M30LP-7
SBRT4M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 4A 8DFN
Produkt ist nicht verfügbar
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LM4040C30QFTA
LM4040C30QFTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 3V SOT23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 10Hz to 10kHz: 35µVrms
Grade: Automotive
Current - Cathode: 70 µA
Current - Output: 15 mA
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.44 EUR
9000+0.42 EUR
15000+0.4 EUR
21000+0.39 EUR
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AL3022MTR-AG1
AL3022MTR-AG1
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CTRLR PWM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.2V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 140kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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AL3022MTR-BG1
AL3022MTR-BG1
Hersteller: Diodes Incorporated
Description: IC LED DRIVER CTRLR PWM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.2V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 140kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Analog, PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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FH1600059 FH.pdf
FH1600059
Hersteller: Diodes Incorporated
Description: CRYSTAL 16.0000MHZ 16PF SMD
Produkt ist nicht verfügbar
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BAS16VVQ-7 BAS16VVQ.pdf
BAS16VVQ-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 200MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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DMT3009UFVW-13 DMT3009UFVW.pdf
DMT3009UFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.6A/30A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
Produkt ist nicht verfügbar
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DMT3009UFVW-7 DMT3009UFVW.pdf
DMT3009UFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.6A/30A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
Produkt ist nicht verfügbar
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ADTC143ECAQ-7 ADTC143ECAQ.pdf
ADTC143ECAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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FMMT620QTA FMMT620.pdf
FMMT620QTA
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.32 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000
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TLC271BIS-13 TLC271.pdf
TLC271BIS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 950µA
Slew Rate: 4.6V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 0.7 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
17+1.05 EUR
25+0.94 EUR
100+0.83 EUR
250+0.78 EUR
500+0.74 EUR
1000+0.72 EUR
Mindestbestellmenge: 13
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SMCJ11CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ11CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 11VWM 18.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.39 EUR
9000+0.38 EUR
Mindestbestellmenge: 3000
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SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ48CAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
Mindestbestellmenge: 5000
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ADTC114ECAQ-13 ADTC114ECAQ.pdf
ADTC114ECAQ-13
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DDTC114ECAQ-13-F ds30329.pdf
DDTC114ECAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.054 EUR
20000+0.049 EUR
30000+0.046 EUR
50000+0.043 EUR
70000+0.042 EUR
100000+0.04 EUR
Mindestbestellmenge: 10000
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DDTC114ECAQ-7-F ds30329.pdf
DDTC114ECAQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.066 EUR
6000+0.059 EUR
9000+0.055 EUR
15000+0.051 EUR
21000+0.049 EUR
30000+0.046 EUR
75000+0.041 EUR
Mindestbestellmenge: 3000
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MURS320 ds30197.pdf
MURS320
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 3A SMC TR 3K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SBR20A100CTFP-JT
SBR20A100CTFP-JT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V ITO-220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SBR20A100CT-E1
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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DCX114YUQ-7-F DCX_XXXX_U.pdf
DCX114YUQ-7-F
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 762000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.1 EUR
9000+0.099 EUR
15000+0.092 EUR
21000+0.088 EUR
30000+0.085 EUR
75000+0.076 EUR
150000+0.071 EUR
Mindestbestellmenge: 3000
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DMN2450UFB4Q-7B DMN2450UFB4Q.pdf
DMN2450UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.076 EUR
20000+0.069 EUR
30000+0.065 EUR
50000+0.061 EUR
70000+0.059 EUR
100000+0.057 EUR
Mindestbestellmenge: 10000
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DMN2029UVT-7 DMN2029UVT.pdf
DMN2029UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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DMN2029UVT-13 DMN2029UVT.pdf
DMN2029UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
20000+0.14 EUR
Mindestbestellmenge: 10000
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PT8A3281WEX PT8A3280-PT8A3287.pdf
PT8A3281WEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Produkt ist nicht verfügbar
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PT8A3281WE PT8A3280-PT8A3287.pdf
PT8A3281WE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
Produkt ist nicht verfügbar
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PT8A3281PEX PT8A3280-PT8A3287.pdf
PT8A3281PEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER DIP-8
Produkt ist nicht verfügbar
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PT8A3281PE PT8A3280-PT8A3287.pdf
PT8A3281PE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER DIP-8
Produkt ist nicht verfügbar
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DMN2710UTQ-7 DMN2710UTQ.pdf
DMN2710UTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.098 EUR
21000+0.094 EUR
30000+0.09 EUR
Mindestbestellmenge: 3000
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DMN2710UTQ-7 DMN2710UTQ.pdf
DMN2710UTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 89162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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DMN2710UTQ-13 DMN2710UTQ.pdf
DMN2710UTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2710UWQ-13 DMN2710UWQ.pdf
DMN2710UWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2710UW-7 DMN2710UW.pdf
DMN2710UW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.059 EUR
21000+0.057 EUR
30000+0.054 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UWQ-7 DMN2710UWQ.pdf
DMN2710UWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UW-13 DMN2710UW.pdf
DMN2710UW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UT-7 DMN2710UT.pdf
DMN2710UT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.1 EUR
9000+0.096 EUR
15000+0.089 EUR
21000+0.086 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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