| Anzahl | Preis |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.06 EUR |
| 1000+ | 1.7 EUR |
| 2500+ | 1.58 EUR |
| 10000+ | 1.48 EUR |
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Technische Details ZXMN3A04KTC Diodes Incorporated
Description: MOSFET N-CH 30V 18.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 1V @ 250mA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote ZXMN3A04KTC nach Preis ab 1.54 EUR bis 4.52 EUR
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ZXMN3A04KTC | Diodes Incorporated |
 Description: MOSFET N-CH 30V 18.4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250mA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 2340 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN3A04KTC |
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auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMN3A04KTC |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.54 EUR |
| ZXMN3A04KTC |
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auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)