DMC2053UVTQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
26+ | 0.68 EUR |
100+ | 0.48 EUR |
500+ | 0.37 EUR |
1000+ | 0.3 EUR |
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Technische Details DMC2053UVTQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC2053UVTQ-7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMC2053UVTQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 20V 4.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2053UVTQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V TSOT26 T&R 3K |
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