Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74055) > Seite 1224 nach 1235
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| DMN1004UFDF-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 12V Type of transistor: N-MOSFET On-state resistance: 4.8mΩ Power dissipation: 2.1W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN1008UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 23.4nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 12.5mΩ Pulsed drain current: 60A Power dissipation: 1W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN2024UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 14.8nC Polarisation: unipolar Drain current: 5.6A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V On-state resistance: 50mΩ Pulsed drain current: 40A Power dissipation: 1.67W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN2028UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 18nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 95mΩ Pulsed drain current: 40A Power dissipation: 1.31W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN3020UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Pulsed drain current: 40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 27nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP1012UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 31nC Polarisation: unipolar Drain current: -12.6A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 40mΩ Pulsed drain current: -55A Power dissipation: 1.36W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP1022UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Pulsed drain current: -90A Power dissipation: 1.3W Gate charge: 48.3nC Polarisation: unipolar Drain current: -8.8A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 59nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 80mΩ Pulsed drain current: -60A Power dissipation: 1.3W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 27nC Polarisation: unipolar Drain current: -7.6A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 90mΩ Pulsed drain current: -40A Power dissipation: 1.3W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMP6250SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P4SMAJ10ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Max. forward impulse current: 23.5A Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Gate charge: 56nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: V-DFN2050-4 On-state resistance: 13mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Power dissipation: 1.27W Gate charge: 84nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DGTD120T25S1PT | DIODES INCORPORATED |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Type of transistor: IGBT Turn-on time: 110ns Kind of package: tube Case: TO247-3 Turn-off time: 367ns Gate-emitter voltage: ±20V Collector current: 25A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 174W Gate charge: 204nC Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LM4040D50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LM4040B50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LM4040C50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LM4040B50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LM4040C50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Pulsed drain current: 50A Power dissipation: 1.5W Gate charge: 7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DMT3009LDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Pulsed drain current: 80A Power dissipation: 1.2W Gate charge: 20nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 7 inch reel; tape Case: V-DFN3030-8 On-state resistance: 22mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Pulsed drain current: 90A Power dissipation: 2W Gate charge: 16.7nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Pulsed drain current: 50A Power dissipation: 1.9W Gate charge: 7nC Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Pulsed drain current: 40A Power dissipation: 0.4W Gate charge: 7nC Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3003LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Pulsed drain current: 100A Power dissipation: 2.4W Gate charge: 44nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3003LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Pulsed drain current: 100A Power dissipation: 2.4W Gate charge: 44nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3003LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Pulsed drain current: 100A Power dissipation: 2.4W Gate charge: 44nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Pulsed drain current: 180A Power dissipation: 2.7W Gate charge: 43.7nC Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 6mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Pulsed drain current: 80A Power dissipation: 27.8W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 10mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Pulsed drain current: 80A Power dissipation: 27.8W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 10mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Pulsed drain current: 90A Power dissipation: 2W Gate charge: 16.7nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3006LPB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Pulsed drain current: 80...100A Power dissipation: 1.7W Gate charge: 12.6nC Polarisation: unipolar Drain current: 9/11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 14mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3008LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6 Power dissipation: 2.1W Gate charge: 5.8nC Polarisation: unipolar Drain-source voltage: 30V Type of transistor: N-MOSFET Case: DFN2020-6 On-state resistance: 10mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3009LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI®3333-8 On-state resistance: 20mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT3020UFDB-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Pulsed drain current: 35A Power dissipation: 1.3W Gate charge: 8.8nC Polarisation: unipolar Drain current: 5.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 30mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DMT30M9LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Pulsed drain current: 400A Power dissipation: 2.6W Gate charge: 160.5nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 1.6mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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LM4041DQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA Type of integrated circuit: voltage reference source Reference voltage: 1.225V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 12mA |
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMCJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SB3100-T | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Max. forward voltage: 0.79V Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel Semiconductor structure: single diode Case: DO201AD Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 100A |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM2904AS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
LM2904AQM8-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: MSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Integrated circuit features: low power Input offset voltage: 1mV Kind of package: reel; tape Open-loop gain: 100dB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| LM2904AQTH-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2...36V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2904ATH-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DFLZ6V2-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Case: PowerDI®123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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APX809S-29SA-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1...5.5V DC Case: SOT23 Operating temperature: -40...125°C Mounting: SMD DC supply current: 7µA Maximum output current: 20mA Threshold on-voltage: 2.93V Kind of package: reel; tape Number of channels: 1 Delay time: 240ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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APX809-40SAG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 4V Kind of package: reel; tape Number of channels: 1 Delay time: 200ms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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APX809-46SAG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 4.63V Kind of package: reel; tape Number of channels: 1 Delay time: 200ms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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APX809-44SAG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 4.38V Kind of package: reel; tape Number of channels: 1 Delay time: 200ms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN1004UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN1008UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN2024UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN2028UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN3020UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP1012UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP1022UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP2021UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP2023UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP6250SFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ10ADF-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 23.5A
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 23.5A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN2011UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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| DMN2011UFX-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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| DMN2011UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DGTD120T25S1PT |
|
Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
Produkt ist nicht verfügbar
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| LM4040D50FTA |
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM4040B50FTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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Stück im Wert von UAH
| LM4040C50FTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM4040B50QFTA |
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM4040C50QFTA |
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DMT3009LDT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3020LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3006LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3020LDV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDBQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020LFDFQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Pulsed drain current: 40A
Power dissipation: 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Pulsed drain current: 40A
Power dissipation: 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3003LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3003LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| DMT3003LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| DMT3004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Pulsed drain current: 180A
Power dissipation: 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Pulsed drain current: 180A
Power dissipation: 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| DMT3006LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3006LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3006LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3006LFVQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3006LPB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Pulsed drain current: 80...100A
Power dissipation: 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Pulsed drain current: 80...100A
Power dissipation: 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3008LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Power dissipation: 2.1W
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Power dissipation: 2.1W
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3009LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3009LFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT3009LFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3020LFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3020LFDBQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3020LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DMT3020LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT3020UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Pulsed drain current: 35A
Power dissipation: 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Pulsed drain current: 35A
Power dissipation: 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| DMT30M9LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Pulsed drain current: 400A
Power dissipation: 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Pulsed drain current: 400A
Power dissipation: 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| LM4041DQFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
Produkt ist nicht verfügbar
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| SMCJ75A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SB3100-T |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 166+ | 0.51 EUR |
| 181+ | 0.48 EUR |
| 201+ | 0.43 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| LM2904AS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM2904AQM8-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM2904AQTH-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2904ATH-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Produkt ist nicht verfügbar
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| DFLZ6V2-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.02 EUR |
| APX809S-29SA-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APX809-40SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APX809-46SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APX809-44SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH