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AP2401S-13 AP2401S-13 DIODES INCORPORATED AP24x1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
AP2411S-13 AP2411S-13 DIODES INCORPORATED AP24x1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
AP2411SN-7 DIODES INCORPORATED AP24x1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
AP2111H-1.8TRG1 AP2111H-1.8TRG1 DIODES INCORPORATED AP2111_Dec2012_DS.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2111H-3.3TRG1 AP2111H-3.3TRG1 DIODES INCORPORATED AP2111_Dec2012_DS.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 3855 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
202+ 0.35 EUR
248+ 0.29 EUR
376+ 0.19 EUR
618+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 173
AP2115M-3.3TRG1 AP2115M-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2125K-1.8TRG1 AP2125K-1.8TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.36A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125K-2.5TRG1 AP2125K-2.5TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.5V
Output current: 0.3A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
auf Bestellung 1625 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
650+ 0.11 EUR
740+ 0.097 EUR
880+ 0.082 EUR
930+ 0.077 EUR
Mindestbestellmenge: 335
AP2125K-2.8TRG1 AP2125K-2.8TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.36A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125K-3.0TRG1 AP2125K-3.0TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.36A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 3V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125K-3.3TRG1 AP2125K-3.3TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 3V
Output current: 0.3A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
Mindestbestellmenge: 250
AP2121AK-2.5TRE1 AP2121AK-2.5TRE1 DIODES INCORPORATED AP2121.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Manufacturer series: AP2121
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP2121AK-2.5TRG1 AP2121AK-2.5TRG1 DIODES INCORPORATED AP2121.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Manufacturer series: AP2121
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP2121AK-3.0TRE1 AP2121AK-3.0TRE1 DIODES INCORPORATED AP2121.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; SOT23-5; SMD
Manufacturer series: AP2121
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP2125KS-1.8TRG1 AP2125KS-1.8TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.36A; SC70; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SC70
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125KS-2.8TRG1 AP2125KS-2.8TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.36A; SC70; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SC70
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
DMN4027SSDQ-13 DMN4027SSDQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 2.14W
Gate charge: 12.9nC
Polarisation: unipolar
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 47mΩ
Produkt ist nicht verfügbar
SMCJ150A-13-F SMCJ150A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ150CA-13-F SMCJ150CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ15CA-13-F SMCJ15CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMTH6002LPS-13 DIODES INCORPORATED DMTH6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 145A; Idm: 820A; 3W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 820A
Power dissipation: 3W
Gate charge: 130.8nC
Polarisation: unipolar
Drain current: 145A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
DMTH6002LPSWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 145A; Idm: 820A; 3W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 820A
Power dissipation: 3W
Gate charge: 131nC
Polarisation: unipolar
Drain current: 145A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
ZVN4424A ZVN4424A DIODES INCORPORATED ZVN4424A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 0.75W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 0.75W
Case: TO92
Gate-source voltage: ±40V
On-state resistance:
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Produkt ist nicht verfügbar
B170-13-F B170-13-F DIODES INCORPORATED b170-1100b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 80pF
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
auf Bestellung 4605 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.3 EUR
410+ 0.17 EUR
460+ 0.16 EUR
535+ 0.13 EUR
Mindestbestellmenge: 240
B170B-13-F DIODES INCORPORATED B170B_B1100B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Produkt ist nicht verfügbar
B170Q-13-F B170Q-13-F DIODES INCORPORATED B170Q-B1100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Application: automotive industry
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Produkt ist nicht verfügbar
DMP1055UFDB-7 DIODES INCORPORATED DMP1055UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain current: -4A
On-state resistance: 0.215Ω
Type of transistor: P-MOSFET
Power dissipation: 1.89W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
DMN2230U-7 DMN2230U-7 DIODES INCORPORATED DMN2230U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
auf Bestellung 2549 Stücke:
Lieferzeit 14-21 Tag (e)
310+0.23 EUR
380+ 0.19 EUR
430+ 0.17 EUR
485+ 0.15 EUR
510+ 0.14 EUR
Mindestbestellmenge: 310
DMN2230UQ-13 DMN2230UQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Pulsed drain current: 7A
Power dissipation: 0.6W
Gate charge: 2.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Produkt ist nicht verfügbar
DMN2230UQ-7 DMN2230UQ-7 DIODES INCORPORATED DMN2230UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.11Ω
Mounting: SMD
auf Bestellung 3355 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
355+ 0.2 EUR
400+ 0.18 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 295
B330-13-F B330-13-F DIODES INCORPORATED b320-360.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Mounting: SMD
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 200pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.24 EUR
360+ 0.2 EUR
Mindestbestellmenge: 305
B330A-13-F B330A-13-F DIODES INCORPORATED B320A-13-F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape; 850mW
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 200pF
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Power dissipation: 0.85W
auf Bestellung 4695 Stücke:
Lieferzeit 14-21 Tag (e)
355+0.2 EUR
475+ 0.15 EUR
590+ 0.12 EUR
660+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 355
B330AF-13 DIODES INCORPORATED B320AF-B330AF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA flat; reel,tape
Mounting: SMD
Case: SMA flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 140pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 14mA
Produkt ist nicht verfügbar
B330B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
B350-13-F DIODES INCORPORATED B320-B360.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Case: SMC
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
B350A-13-F B350A-13-F DIODES INCORPORATED B320A-13-F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMA; reel,tape; 850mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 80A
Power dissipation: 0.85W
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
275+0.26 EUR
440+ 0.16 EUR
480+ 0.14 EUR
Mindestbestellmenge: 275
B350AF-13 DIODES INCORPORATED B350AF-B360AF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMA flat; reel,tape
Kind of package: reel; tape
Case: SMA flat
Mounting: SMD
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Leakage current: 24mA
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 50V
Max. forward voltage: 0.65V
Produkt ist nicht verfügbar
B350AQ-13-F B350AQ-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMA; reel,tape; 850mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 80A
Power dissipation: 0.85W
Application: automotive industry
Produkt ist nicht verfügbar
B350B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Case: SMB
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
TB3500H-13-F TB3500H-13-F DIODES INCORPORATED TBxxx0H.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 320V; SMB; SMD; reel,tape; 100A; UBO: 400V
Type of thyristor: TSS
Max. off-state voltage: 320V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 400V
Produkt ist nicht verfügbar
S1DB-13-F S1DB-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: SMD
Case: SMB
Capacitance: 10pF
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
345+0.21 EUR
825+ 0.087 EUR
915+ 0.078 EUR
1210+ 0.059 EUR
1280+ 0.056 EUR
Mindestbestellmenge: 345
S3DB-13-F S3DB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: SMD
Case: SMB
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.24 EUR
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440+ 0.16 EUR
Mindestbestellmenge: 305
DMN2050LFDB-13 DIODES INCORPORATED DMN2050LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMN3032LFDB-13 DIODES INCORPORATED DMN3032LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Kind of package: reel; tape
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP2065UFDB-13 DIODES INCORPORATED DMP2065UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.54W
Kind of package: reel; tape
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP2075UFDB-13 DIODES INCORPORATED DMP2075UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 137mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
BCV49TA BCV49TA DIODES INCORPORATED BCV49.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.1W
Case: SOT89
Pulsed collector current: 0.8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
MMBTA55-7-F MMBTA55-7-F DIODES INCORPORATED MMBTA55_MMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2535 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
390+ 0.18 EUR
440+ 0.16 EUR
490+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 295
SB190-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 90V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
SMBJ7.0A-13-F SMBJ7.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
FZT491ATA FZT491ATA DIODES INCORPORATED FZT491A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
162+ 0.44 EUR
183+ 0.39 EUR
198+ 0.36 EUR
Mindestbestellmenge: 148
SBR1A40S3-7 SBR1A40S3-7 DIODES INCORPORATED SBR1A40S3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 1A; SOD323; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky rectifying
Max. forward impulse current: 20A
Max. forward voltage: 0.55V
Technology: SBR®
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
410+ 0.18 EUR
460+ 0.16 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 360
SBRT15U100SP5-7 SBRT15U100SP5-7 DIODES INCORPORATED SBRT15U100SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 100V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 250A
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
90+ 0.8 EUR
99+ 0.73 EUR
122+ 0.59 EUR
132+ 0.54 EUR
Mindestbestellmenge: 64
MMBD4448-7-F MMBD4448-7-F DIODES INCORPORATED Schottky-SOT23-circuit.jpg Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
1475+0.049 EUR
1675+ 0.043 EUR
1875+ 0.039 EUR
2325+ 0.031 EUR
2450+ 0.029 EUR
Mindestbestellmenge: 1475
MMBD4448DW-7-F MMBD4448DW-7-F DIODES INCORPORATED MMBD4448DW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 250mA; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
530+ 0.13 EUR
Mindestbestellmenge: 380
MMBD4448HTS-7-F MMBD4448HTS-7-F DIODES INCORPORATED ds30263.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
740+0.097 EUR
Mindestbestellmenge: 740
MMBD4448W-7-F MMBD4448W-7-F DIODES INCORPORATED ds30095.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
1525+0.047 EUR
1725+ 0.042 EUR
1950+ 0.037 EUR
2150+ 0.033 EUR
2275+ 0.032 EUR
Mindestbestellmenge: 1525
DMT2005UDV-13 DIODES INCORPORATED DMT2005UDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DGTD65T15H2TF DGTD65T15H2TF DIODES INCORPORATED DGTD65T15H2TF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
auf Bestellung 702 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
43+ 1.7 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 38
AP2401S-13 AP24x1.pdf
AP2401S-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
AP2411S-13 AP24x1.pdf
AP2411S-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
AP2411SN-7 AP24x1.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
AP2111H-1.8TRG1 AP2111_Dec2012_DS.pdf
AP2111H-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2111H-3.3TRG1 AP2111_Dec2012_DS.pdf
AP2111H-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
auf Bestellung 3855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
202+ 0.35 EUR
248+ 0.29 EUR
376+ 0.19 EUR
618+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 173
AP2115M-3.3TRG1 AP2115.pdf
AP2115M-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2125K-1.8TRG1 AP2125.pdf
AP2125K-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.36A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125K-2.5TRG1 AP2125.pdf
AP2125K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.5V
Output current: 0.3A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
auf Bestellung 1625 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
650+ 0.11 EUR
740+ 0.097 EUR
880+ 0.082 EUR
930+ 0.077 EUR
Mindestbestellmenge: 335
AP2125K-2.8TRG1 AP2125.pdf
AP2125K-2.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.36A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125K-3.0TRG1 AP2125.pdf
AP2125K-3.0TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.36A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 3V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125K-3.3TRG1 AP2125.pdf
AP2125K-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23-5; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 3V
Output current: 0.3A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
Mindestbestellmenge: 250
AP2121AK-2.5TRE1 AP2121.pdf
AP2121AK-2.5TRE1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Manufacturer series: AP2121
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP2121AK-2.5TRG1 AP2121.pdf
AP2121AK-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Manufacturer series: AP2121
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP2121AK-3.0TRE1 AP2121.pdf
AP2121AK-3.0TRE1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; SOT23-5; SMD
Manufacturer series: AP2121
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT23-5
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP2125KS-1.8TRG1 AP2125.pdf
AP2125KS-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.36A; SC70; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SC70
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
AP2125KS-2.8TRG1 AP2125.pdf
AP2125KS-2.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.36A; SC70; SMD
Manufacturer series: AP2125
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SC70
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.36A
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3.5...6V
Produkt ist nicht verfügbar
DMN4027SSDQ-13
DMN4027SSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 2.14W
Gate charge: 12.9nC
Polarisation: unipolar
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 47mΩ
Produkt ist nicht verfügbar
SMCJ150A-13-F SMCJ_ser.pdf
SMCJ150A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ150CA-13-F SMCJ_ser.pdf
SMCJ150CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ15CA-13-F SMCJ_ser.pdf
SMCJ15CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMTH6002LPS-13 DMTH6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 145A; Idm: 820A; 3W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 820A
Power dissipation: 3W
Gate charge: 130.8nC
Polarisation: unipolar
Drain current: 145A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
DMTH6002LPSWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 145A; Idm: 820A; 3W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 820A
Power dissipation: 3W
Gate charge: 131nC
Polarisation: unipolar
Drain current: 145A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
ZVN4424A ZVN4424A.pdf
ZVN4424A
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 0.75W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 0.75W
Case: TO92
Gate-source voltage: ±40V
On-state resistance:
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Produkt ist nicht verfügbar
B170-13-F b170-1100b.pdf
B170-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 80pF
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
auf Bestellung 4605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
240+0.3 EUR
410+ 0.17 EUR
460+ 0.16 EUR
535+ 0.13 EUR
Mindestbestellmenge: 240
B170B-13-F B170B_B1100B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Produkt ist nicht verfügbar
B170Q-13-F B170Q-B1100Q.pdf
B170Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Application: automotive industry
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Produkt ist nicht verfügbar
DMP1055UFDB-7 DMP1055UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain current: -4A
On-state resistance: 0.215Ω
Type of transistor: P-MOSFET
Power dissipation: 1.89W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
DMN2230U-7 DMN2230U.pdf
DMN2230U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
auf Bestellung 2549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
310+0.23 EUR
380+ 0.19 EUR
430+ 0.17 EUR
485+ 0.15 EUR
510+ 0.14 EUR
Mindestbestellmenge: 310
DMN2230UQ-13
DMN2230UQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Pulsed drain current: 7A
Power dissipation: 0.6W
Gate charge: 2.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Produkt ist nicht verfügbar
DMN2230UQ-7 DMN2230UQ.pdf
DMN2230UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.11Ω
Mounting: SMD
auf Bestellung 3355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
355+ 0.2 EUR
400+ 0.18 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 295
B330-13-F b320-360.pdf
B330-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape
Mounting: SMD
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 200pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
305+0.24 EUR
360+ 0.2 EUR
Mindestbestellmenge: 305
B330A-13-F B320A-13-F.pdf
B330A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape; 850mW
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 200pF
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Power dissipation: 0.85W
auf Bestellung 4695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
355+0.2 EUR
475+ 0.15 EUR
590+ 0.12 EUR
660+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 355
B330AF-13 B320AF-B330AF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA flat; reel,tape
Mounting: SMD
Case: SMA flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 140pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 14mA
Produkt ist nicht verfügbar
B330B-13-F B320B-B360B_Rev10-2.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
B350-13-F B320-B360.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Case: SMC
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
B350A-13-F B320A-13-F.pdf
B350A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMA; reel,tape; 850mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 80A
Power dissipation: 0.85W
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
275+0.26 EUR
440+ 0.16 EUR
480+ 0.14 EUR
Mindestbestellmenge: 275
B350AF-13 B350AF-B360AF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMA flat; reel,tape
Kind of package: reel; tape
Case: SMA flat
Mounting: SMD
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Leakage current: 24mA
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 50V
Max. forward voltage: 0.65V
Produkt ist nicht verfügbar
B350AQ-13-F
B350AQ-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMA; reel,tape; 850mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 80A
Power dissipation: 0.85W
Application: automotive industry
Produkt ist nicht verfügbar
B350B-13-F B320B-B360B_Rev10-2.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.7V
Case: SMB
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
TB3500H-13-F TBxxx0H.pdf
TB3500H-13-F
Hersteller: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 320V; SMB; SMD; reel,tape; 100A; UBO: 400V
Type of thyristor: TSS
Max. off-state voltage: 320V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 400V
Produkt ist nicht verfügbar
S1DB-13-F s1ab-s1mb.pdf
S1DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: SMD
Case: SMB
Capacitance: 10pF
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
345+0.21 EUR
825+ 0.087 EUR
915+ 0.078 EUR
1210+ 0.059 EUR
1280+ 0.056 EUR
Mindestbestellmenge: 345
S3DB-13-F ds16005.pdf
S3DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: SMD
Case: SMB
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
305+0.24 EUR
320+ 0.22 EUR
415+ 0.17 EUR
440+ 0.16 EUR
Mindestbestellmenge: 305
DMN2050LFDB-13 DMN2050LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMN3032LFDB-13 DMN3032LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Kind of package: reel; tape
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP2065UFDB-13 DMP2065UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.54W
Kind of package: reel; tape
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP2075UFDB-13 DMP2075UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 137mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
BCV49TA BCV49.pdf
BCV49TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.1W
Case: SOT89
Pulsed collector current: 0.8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
MMBTA55-7-F MMBTA55_MMBTA56.pdf
MMBTA55-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 500mA; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
390+ 0.18 EUR
440+ 0.16 EUR
490+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 295
SB190-T ds30116.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 90V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
SMBJ7.0A-13-F SMBJ_ser.pdf
SMBJ7.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
FZT491ATA FZT491A.pdf
FZT491ATA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
162+ 0.44 EUR
183+ 0.39 EUR
198+ 0.36 EUR
Mindestbestellmenge: 148
SBR1A40S3-7 SBR1A40S3.pdf
SBR1A40S3-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 1A; SOD323; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky rectifying
Max. forward impulse current: 20A
Max. forward voltage: 0.55V
Technology: SBR®
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
410+ 0.18 EUR
460+ 0.16 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 360
SBRT15U100SP5-7 SBRT15U100SP5.pdf
SBRT15U100SP5-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 100V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 250A
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
90+ 0.8 EUR
99+ 0.73 EUR
122+ 0.59 EUR
132+ 0.54 EUR
Mindestbestellmenge: 64
MMBD4448-7-F Schottky-SOT23-circuit.jpg
MMBD4448-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1475+0.049 EUR
1675+ 0.043 EUR
1875+ 0.039 EUR
2325+ 0.031 EUR
2450+ 0.029 EUR
Mindestbestellmenge: 1475
MMBD4448DW-7-F MMBD4448DW.pdf
MMBD4448DW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 250mA; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
530+ 0.13 EUR
Mindestbestellmenge: 380
MMBD4448HTS-7-F ds30263.pdf
MMBD4448HTS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
740+0.097 EUR
Mindestbestellmenge: 740
MMBD4448W-7-F ds30095.pdf
MMBD4448W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1525+0.047 EUR
1725+ 0.042 EUR
1950+ 0.037 EUR
2150+ 0.033 EUR
2275+ 0.032 EUR
Mindestbestellmenge: 1525
DMT2005UDV-13 DMT2005UDV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DGTD65T15H2TF DGTD65T15H2TF.pdf
DGTD65T15H2TF
Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
auf Bestellung 702 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
43+ 1.7 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 38
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