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DMN2011UFX-7 DIODES INCORPORATED DMN2011UFX.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
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DMN2011UFDE-7 DIODES INCORPORATED DMN2011UFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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DGTD120T25S1PT DGTD120T25S1PT DIODES INCORPORATED DGTD120T25S1PT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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LM4040D50FTA LM4040D50FTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50FTA LM4040B50FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040C50FTA LM4040C50FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50QFTA LM4040B50QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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LM4040C50QFTA LM4040C50QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
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DMT3009LDT-7 DIODES INCORPORATED DMT3009LDT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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DMT3006LFDFQ-7 DIODES INCORPORATED DMT3006LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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DMT3006LFV-13 DIODES INCORPORATED DMT3006LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
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DMT3020LDV-7 DIODES INCORPORATED DMT3020LDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
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DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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DMT3020LFDFQ-13 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Pulsed drain current: 40A
Power dissipation: 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
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DMT3003LFG-13 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
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DMT3003LFG-7 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
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DMT3003LFGQ-7 DIODES INCORPORATED DMT3003LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
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DMT3004LPS-13 DIODES INCORPORATED DMT3004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Pulsed drain current: 180A
Power dissipation: 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
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DMT3006LFDF-7 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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DMT3006LFG-13 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
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DMT3006LFG-7 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
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DMT3006LFVQ-13 DIODES INCORPORATED DMT3006LFVQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
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DMT3006LPB-13 DIODES INCORPORATED DMT3006LPB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Pulsed drain current: 80...100A
Power dissipation: 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
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DMT3008LFDF-7 DIODES INCORPORATED DMT3008LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Power dissipation: 2.1W
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
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DMT3009LFVW-7 DIODES INCORPORATED DMT3009LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
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DMT3009LFVWQ-13 DIODES INCORPORATED DMT3009LFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
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DMT3009LFVWQ-7 DIODES INCORPORATED DMT3009LFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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DMT3020LFDF-7 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
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DMT3020LFDFQ-7 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
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DMT3020UFDB-13 DIODES INCORPORATED DMT3020UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Pulsed drain current: 35A
Power dissipation: 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
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DMT30M9LPS-13 DIODES INCORPORATED DMT30M9LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Pulsed drain current: 400A
Power dissipation: 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
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LM4041DQFTA LM4041DQFTA DIODES INCORPORATED LM4041.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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SMCJ75A-13-F SMCJ75A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SB3100-T SB3100-T DIODES INCORPORATED SB370_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
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LM2904AS-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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LM2904AQM8-13 LM2904AQM8-13 DIODES INCORPORATED LM2902Q_04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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LM2904AQTH-13 DIODES INCORPORATED LM2902Q-04Q.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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LM2904ATH-13 DIODES INCORPORATED LM2902-04.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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DFLZ6V2-7 DFLZ6V2-7 DIODES INCORPORATED DFLZ-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
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APX809S-29SA-7 APX809S-29SA-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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APX809-40SAG-7 APX809-40SAG-7 DIODES INCORPORATED APX809-APX810.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-46SAG-7 APX809-46SAG-7 DIODES INCORPORATED APX809-APX810.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-44SAG-7 APX809-44SAG-7 DIODES INCORPORATED APX809-APX810.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809S-44SA-7 APX809S-44SA-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 4.4V
Kind of package: reel; tape
Delay time: 240ms
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APX809S-31SA-7 APX809S-31SA-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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APX809S-26SA-7 APX809S-26SA-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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APX809S00-29SR-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23R
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 1.7ms
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APX809-23SRG-7 DIODES INCORPORATED APX809_810_Rev_5-3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-26SRG-7 DIODES INCORPORATED APX809%2C_APX810.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-29SRG-7 DIODES INCORPORATED APX809_810_Rev_5-3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-31SRG-7 DIODES INCORPORATED APX809_810_Rev_5-3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-40SRG-7 DIODES INCORPORATED APX809_810_Rev_5-3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-44SRG-7 DIODES INCORPORATED APX809_810_Rev_5-3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-46SRG-7 DIODES INCORPORATED APX809_810_Rev_5-3.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809S-23SA-7 APX809S-23SA-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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APX809S-26SR-7 DIODES INCORPORATED APX809S-810S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23R
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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DMN2011UFX-7 DMN2011UFX.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
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DMN2011UFDE-7 DMN2011UFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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DGTD120T25S1PT DGTD120T25S1PT.pdf
Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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LM4040D50FTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50FTA LM4040.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040C50FTA LM4040.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50QFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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LM4040C50QFTA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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DMT3020LSDQ-13 DMT3020LSDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
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DMT3009LDT-7 DMT3009LDT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
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DMT3020LFDB-7 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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DMT3006LFV-13 DMT3006LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020LDV-7 DMT3020LDV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
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DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020LFDFQ-13 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Pulsed drain current: 40A
Power dissipation: 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
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DMT3003LFG-13 DMT3003LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3003LFG-7 DMT3003LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3003LFGQ-7 DMT3003LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3004LPS-13 DMT3004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Pulsed drain current: 180A
Power dissipation: 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3006LFDF-7 DMT3006LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3006LFG-13 DMT3006LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3006LFG-7 DMT3006LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3006LFVQ-13 DMT3006LFVQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3006LPB-13 DMT3006LPB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Pulsed drain current: 80...100A
Power dissipation: 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3008LFDF-7 DMT3008LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Power dissipation: 2.1W
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3009LFVW-7 DMT3009LFVW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
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DMT3009LFVWQ-13 DMT3009LFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3009LFVWQ-7 DMT3009LFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020LFDB-13 DMT3020LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020LFDF-7 DMT3020LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020LFDFQ-7 DMT3020LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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DMT3020UFDB-13 DMT3020UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Pulsed drain current: 35A
Power dissipation: 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
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DMT30M9LPS-13 DMT30M9LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Pulsed drain current: 400A
Power dissipation: 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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LM4041DQFTA LM4041.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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SMCJ75A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SB3100-T SB370_ser.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Max. forward voltage: 0.79V
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 100A
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LM2904AS-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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LM2904AQM8-13 LM2902Q_04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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LM2904AQTH-13 LM2902Q-04Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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LM2904ATH-13 LM2902-04.pdf
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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DFLZ6V2-7 DFLZ-ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
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AnzahlPrivatkunde
5+17.02 EUR
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APX809S-29SA-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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APX809-40SAG-7 APX809-APX810.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
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APX809-46SAG-7 APX809-APX810.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
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APX809-44SAG-7 APX809-APX810.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
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APX809S-44SA-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 4.4V
Kind of package: reel; tape
Delay time: 240ms
Produkt ist nicht verfügbar
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APX809S-31SA-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809S-26SA-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
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APX809S00-29SR-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23R
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 1.7ms
Produkt ist nicht verfügbar
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APX809-23SRG-7 APX809_810_Rev_5-3.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809-26SRG-7 APX809%2C_APX810.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809-29SRG-7 APX809_810_Rev_5-3.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809-31SRG-7 APX809_810_Rev_5-3.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809-40SRG-7 APX809_810_Rev_5-3.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809-44SRG-7 APX809_810_Rev_5-3.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809-46SRG-7 APX809_810_Rev_5-3.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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APX809S-23SA-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APX809S-26SR-7 APX809S-810S.pdf
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23R
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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