DMP1022UFDF-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details DMP1022UFDF-13 Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 730mW (Ta), Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP1022UFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMP1022UFDF-13 | Diodes Incorporated |
MOSFETs 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP1022UFDF-13 |
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Hersteller: Diodes Incorporated
MOSFETs 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC
MOSFETs 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH


