DMP1022UFDF-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.31 EUR |
| 20000+ | 0.29 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
10000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP1022UFDF-13 Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V.
Weitere Produktangebote DMP1022UFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DMP1022UFDF-13 | Diodes Incorporated |
MOSFETs 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP1022UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Pulsed drain current: -90A Power dissipation: 1.3W Gate charge: 48.3nC Polarisation: unipolar Drain current: -8.8A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP1022UFDF-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC
MOSFETs 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP1022UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH