Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74206) > Seite 1222 nach 1237
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AL5809-150QP1-7 | DIODES INCORPORATED |
 Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 150mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 0.15A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.5...60V DC Integrated circuit features: linear dimming; PWM |
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AL5809-15QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 15mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
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AL5809-40S1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Output current: 40mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
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AL5822W6-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SOT26 Output current: 220µA Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 11...30V DC Kind of package: reel; tape |
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AL5890-30D-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: LED driver Case: TO252 Output current: 30mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 7...400V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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AL5890-30P1-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: LED driver Case: PowerDI®123 Output current: 30mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 7...400V DC Kind of package: reel; tape |
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| AL5817MP-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC Type of integrated circuit: driver Operating temperature: -40...125°C Kind of package: reel; tape Case: MSOP8EP Kind of integrated circuit: LED driver Number of channels: 1 Operating voltage: 4.5...60V DC Mounting: SMD Output current: 15mA |
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74HCT32S14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: HCT Kind of input: with Schmitt trigger Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Kind of output: push-pull Operating temperature: -40...150°C Technology: CMOS; TTL |
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74HCT32T14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; IN: 8; SMD; TSSOP14; -40÷125°C; 20uA; 11ns; HCT Type of integrated circuit: digital Kind of gate: OR Number of inputs: 8 Mounting: SMD Case: TSSOP14 Family: HCT Quiescent current: 20µA Delay time: 11ns Operating temperature: -40...125°C |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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74LVC373AT20-13 | DIODES INCORPORATED |
Category: Latches Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20 Operating temperature: -40...150°C Kind of output: 3-state Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: reel; tape Case: TSSOP20 Family: LVC Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Supply voltage: 1.65...3.6V DC Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DDZX15-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±2.5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DMP32D4SW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW Pulsed drain current: -1A Power dissipation: 0.3W Gate charge: 1.2nC Polarisation: unipolar Drain current: -0.2A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT323 On-state resistance: 4Ω Mounting: SMD |
Produkt ist nicht verfügbar |
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DMP32D4S-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23 Pulsed drain current: -1A Power dissipation: 0.54W Gate charge: 1.2nC Polarisation: unipolar Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SOT23 On-state resistance: 4Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMP32D4S-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23 Pulsed drain current: -1A Power dissipation: 0.54W Gate charge: 1.2nC Polarisation: unipolar Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 4Ω Mounting: SMD |
Produkt ist nicht verfügbar |
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| DMP32D5SFB-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W Pulsed drain current: -1A Power dissipation: 1.2W Gate charge: 4nC Polarisation: unipolar Drain current: -0.4A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: 7 inch reel; tape Case: X1-DFN1006-3 On-state resistance: 4Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP32D9UFZ-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW Pulsed drain current: -0.7A Power dissipation: 0.39W Gate charge: 0.35nC Polarisation: unipolar Drain current: -0.1A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: X2-DFN0606-3 On-state resistance: 10Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S1MDF-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A Max. forward voltage: 1.1V Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: D-FLAT Type of diode: rectifying Reverse recovery time: 1.4µs Mounting: SMD Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
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| US2JDF-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A Max. forward voltage: 1.7V Max. off-state voltage: 1kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: D-FLAT Capacitance: 10pF Type of diode: rectifying Reverse recovery time: 75ns Mounting: SMD Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AL9901FDF-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90% Output current: 0.4A Type of integrated circuit: driver Operating temperature: -40...105°C Efficiency: 90% Kind of package: reel; tape Case: U-DFN6040-12 Kind of integrated circuit: LED driver Number of channels: 1 Operating voltage: 15...500V DC Mounting: SMD |
Produkt ist nicht verfügbar |
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| AL9902FDF-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90% Output current: 0.4A Type of integrated circuit: driver Operating temperature: -40...105°C Efficiency: 90% Kind of package: reel; tape Case: U-DFN6040-12 Kind of integrated circuit: LED driver Number of channels: 1 Operating voltage: 20...500V DC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMP1009UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -70A Power dissipation: 2W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 30mΩ Mounting: SMD Gate charge: 44nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP3026SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W Pulsed drain current: -50A Power dissipation: 1.3W Gate charge: 19.6nC Polarisation: unipolar Drain current: -8.3A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 54mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN2011UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Pulsed drain current: 80A Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP1005UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Pulsed drain current: -70A Power dissipation: 2.1W Gate charge: 47nC Polarisation: unipolar Drain current: -10.3A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 18.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP2040UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Pulsed drain current: -35A Power dissipation: 1.8W Gate charge: 19nC Polarisation: unipolar Drain current: -4.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 53mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP6110SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Pulsed drain current: -20A Power dissipation: 1.3W Gate charge: 17.2nC Polarisation: unipolar Drain current: -3.4A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 0.13Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN3021LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Pulsed drain current: 50A Power dissipation: 1.3W Gate charge: 14nC Polarisation: unipolar Drain current: 9.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 20mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN1004UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6 Power dissipation: 2.1W Polarisation: unipolar Drain-source voltage: 12V Type of transistor: N-MOSFET Case: U-DFN2020-6 On-state resistance: 4.8mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN1008UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 9.8A Pulsed drain current: 60A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 23.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN2024UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Pulsed drain current: 40A Power dissipation: 1.67W Gate charge: 14.8nC Polarisation: unipolar Drain current: 5.6A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 50mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN2028UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Pulsed drain current: 40A Power dissipation: 1.31W Gate charge: 18nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 95mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN3020UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W Pulsed drain current: 40A Power dissipation: 1.3W Gate charge: 27nC Polarisation: unipolar Drain current: 8.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 0.12Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP1012UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Pulsed drain current: -55A Power dissipation: 1.36W Gate charge: 31nC Polarisation: unipolar Drain current: -12.6A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 40mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP1022UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Pulsed drain current: -90A Power dissipation: 1.3W Gate charge: 48.3nC Polarisation: unipolar Drain current: -8.8A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Pulsed drain current: -60A Power dissipation: 1.3W Gate charge: 59nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 80mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Pulsed drain current: -40A Power dissipation: 1.3W Gate charge: 27nC Polarisation: unipolar Drain current: -7.6A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 90mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMP6250SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Polarisation: unipolar Type of transistor: P-MOSFET Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| P4SMAJ10ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Gate charge: 56nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: V-DFN2050-4 On-state resistance: 13mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Power dissipation: 1.27W Gate charge: 84nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DGTD120T25S1PT | DIODES INCORPORATED |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Type of transistor: IGBT Turn-on time: 110ns Kind of package: tube Case: TO247-3 Turn-off time: 367ns Gate-emitter voltage: ±20V Collector current: 25A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 174W Gate charge: 204nC Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LM4040D50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
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LM4040B50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
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Im Einkaufswagen Stück im Wert von UAH |
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LM4040C50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
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LM4040B50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
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Im Einkaufswagen Stück im Wert von UAH |
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LM4040C50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
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| DMT3009LDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Power dissipation: 1.2W Gate charge: 20nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 7 inch reel; tape Case: V-DFN3030-8 On-state resistance: 22mΩ Mounting: SMD Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT3009LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMT3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI®3333-8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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LM4041DQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA Type of integrated circuit: voltage reference source Reference voltage: 1.225V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 12mA |
Produkt ist nicht verfügbar |
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SMCJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| LM2904AS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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LM2904AQM8-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: MSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Integrated circuit features: low power Input offset voltage: 1mV Kind of package: reel; tape Open-loop gain: 100dB |
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| LM2904AQTH-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2...36V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LM2904ATH-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DFLZ6V2-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Case: PowerDI®123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AL5809-150QP1-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.5...60V DC
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.5...60V DC
Integrated circuit features: linear dimming; PWM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5809-15QP1-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5809-40S1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5822W6-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT26
Output current: 220µA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 11...30V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT26
Output current: 220µA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 11...30V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5890-30D-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: TO252
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: TO252
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5890-30P1-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5817MP-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: MSOP8EP
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 4.5...60V DC
Mounting: SMD
Output current: 15mA
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: MSOP8EP
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 4.5...60V DC
Mounting: SMD
Output current: 15mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT32S14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS; TTL
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT32T14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; IN: 8; SMD; TSSOP14; -40÷125°C; 20uA; 11ns; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of inputs: 8
Mounting: SMD
Case: TSSOP14
Family: HCT
Quiescent current: 20µA
Delay time: 11ns
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; OR; IN: 8; SMD; TSSOP14; -40÷125°C; 20uA; 11ns; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of inputs: 8
Mounting: SMD
Case: TSSOP14
Family: HCT
Quiescent current: 20µA
Delay time: 11ns
Operating temperature: -40...125°C
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| 74LVC373AT20-13 |
|
Hersteller: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX15-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)
| DMP32D4SW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW
Pulsed drain current: -1A
Power dissipation: 0.3W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW
Pulsed drain current: -1A
Power dissipation: 0.3W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 4Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP32D4S-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP32D4S-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP32D5SFB-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W
Pulsed drain current: -1A
Power dissipation: 1.2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -0.4A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W
Pulsed drain current: -1A
Power dissipation: 1.2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -0.4A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance: 4Ω
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| DMP32D9UFZ-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S1MDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: D-FLAT
Type of diode: rectifying
Reverse recovery time: 1.4µs
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: D-FLAT
Type of diode: rectifying
Reverse recovery time: 1.4µs
Mounting: SMD
Max. forward impulse current: 30A
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| US2JDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Max. forward voltage: 1.7V
Max. off-state voltage: 1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: D-FLAT
Capacitance: 10pF
Type of diode: rectifying
Reverse recovery time: 75ns
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Max. forward voltage: 1.7V
Max. off-state voltage: 1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: D-FLAT
Capacitance: 10pF
Type of diode: rectifying
Reverse recovery time: 75ns
Mounting: SMD
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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| AL9901FDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90%
Output current: 0.4A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Efficiency: 90%
Kind of package: reel; tape
Case: U-DFN6040-12
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Mounting: SMD
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90%
Output current: 0.4A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Efficiency: 90%
Kind of package: reel; tape
Case: U-DFN6040-12
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Mounting: SMD
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| AL9902FDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Output current: 0.4A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Efficiency: 90%
Kind of package: reel; tape
Case: U-DFN6040-12
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Mounting: SMD
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Output current: 0.4A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Efficiency: 90%
Kind of package: reel; tape
Case: U-DFN6040-12
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Mounting: SMD
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| DMP1009UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -70A
Power dissipation: 2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -70A
Power dissipation: 2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| DMP3026SFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Pulsed drain current: -50A
Power dissipation: 1.3W
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 54mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Pulsed drain current: -50A
Power dissipation: 1.3W
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 54mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMN2011UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Pulsed drain current: 80A
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Pulsed drain current: 80A
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3020LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Produkt ist nicht verfügbar
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| DMP1005UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Pulsed drain current: -70A
Power dissipation: 2.1W
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 18.5mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Pulsed drain current: -70A
Power dissipation: 2.1W
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 18.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMP2040UFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Pulsed drain current: -35A
Power dissipation: 1.8W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 53mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Pulsed drain current: -35A
Power dissipation: 1.8W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 53mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMP6110SFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Pulsed drain current: -20A
Power dissipation: 1.3W
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.13Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Pulsed drain current: -20A
Power dissipation: 1.3W
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.13Ω
Mounting: SMD
Produkt ist nicht verfügbar
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| DMN3021LFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Pulsed drain current: 50A
Power dissipation: 1.3W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 20mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Pulsed drain current: 50A
Power dissipation: 1.3W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 20mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMN1004UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Power dissipation: 2.1W
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Case: U-DFN2020-6
On-state resistance: 4.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Power dissipation: 2.1W
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Case: U-DFN2020-6
On-state resistance: 4.8mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMN1008UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| DMN2024UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Pulsed drain current: 40A
Power dissipation: 1.67W
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 50mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Pulsed drain current: 40A
Power dissipation: 1.67W
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 50mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMN2028UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Pulsed drain current: 40A
Power dissipation: 1.31W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 95mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Pulsed drain current: 40A
Power dissipation: 1.31W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 95mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMN3020UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Pulsed drain current: 40A
Power dissipation: 1.3W
Gate charge: 27nC
Polarisation: unipolar
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.12Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Pulsed drain current: 40A
Power dissipation: 1.3W
Gate charge: 27nC
Polarisation: unipolar
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.12Ω
Mounting: SMD
Produkt ist nicht verfügbar
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| DMP1012UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Pulsed drain current: -55A
Power dissipation: 1.36W
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 40mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Pulsed drain current: -55A
Power dissipation: 1.36W
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 40mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMP1022UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| DMP2021UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Pulsed drain current: -60A
Power dissipation: 1.3W
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 80mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Pulsed drain current: -60A
Power dissipation: 1.3W
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 80mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMP2023UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Pulsed drain current: -40A
Power dissipation: 1.3W
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 90mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Pulsed drain current: -40A
Power dissipation: 1.3W
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 90mΩ
Mounting: SMD
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| DMP6250SFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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| DMT3006LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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| P4SMAJ10ADF-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DMN2011UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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| DMN2011UFX-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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| DMN2011UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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| DGTD120T25S1PT |
|
Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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| LM4040D50FTA |
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040B50FTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040C50FTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040B50QFTA |
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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| LM4040C50QFTA |
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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| DMT3009LDT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT3009LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
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| DMT3009LFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMT3009LFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
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| LM4041DQFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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| SMCJ75A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| LM2904AS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2904AQM8-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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| LM2904AQTH-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 2÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2904ATH-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| DFLZ6V2-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)