Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74219) > Seite 1221 nach 1237
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B230-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 200pF Max. forward voltage: 0.5V Load current: 2A Max. forward impulse current: 50A |
auf Bestellung 1898 Stücke: Lieferzeit 14-21 Tag (e) |
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SB3100-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Type of diode: Schottky rectifying Case: DO201AD Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2013UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±8V Drain current: 10A Gate charge: 25.8nC On-state resistance: 50mΩ Pulsed drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FZT757TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 30MHz |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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B250-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 200pF Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 50A |
auf Bestellung 667 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ90A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...115.5V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMBJ90CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...115.5V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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74LVC1G34W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOT25 Manufacturer series: LVC Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 200µA Kind of integrated circuit: buffer; non-inverting Kind of output: push-pull |
auf Bestellung 3041 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G11W6-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT26 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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| 74LVC1G11FW4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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| 74LVC1G11FZ4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
Produkt ist nicht verfügbar |
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ZVN4206GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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DF01S-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7375-33W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD Manufacturer series: AP7375 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT25 Output current: 0.35A Voltage drop: 0.35V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 3.3V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AP7375-50SA-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT23; SMD Manufacturer series: AP7375 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23 Output current: 0.35A Voltage drop: 0.35V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 5V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AP7375-50Y-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT89; SMD Manufacturer series: AP7375 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT89 Output current: 0.35A Voltage drop: 0.35V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 5V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AP7375-33Y-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD Manufacturer series: AP7375 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT89 Output current: 0.35A Voltage drop: 0.35V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 3.3V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AP7375Q-50Y-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT89; SMD Manufacturer series: AP7375Q Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT89 Output current: 0.35A Voltage drop: 1.2V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 5V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AP7375Q-33SP-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SO8-EP; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output current: 0.35A Voltage drop: 1.2V Output voltage: 3.3V Input voltage: 3...45V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7375Q Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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| AP7375Q-33Y-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD Manufacturer series: AP7375Q Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT89 Output current: 0.35A Voltage drop: 1.2V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 3.3V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AP7375Q-50SP-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SO8-EP; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output current: 0.35A Voltage drop: 1.2V Output voltage: 5V Input voltage: 3...45V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7375Q Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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| AP7375Q-50FDCW-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; uDFN6; SMD Manufacturer series: AP7375Q Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: uDFN6 Integrated circuit features: shutdown mode control input Output current: 0.35A Voltage drop: 1.2V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 5V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FS1MED-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A Mounting: SMD Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Kind of package: reel; tape Type of diode: rectifying Max. forward impulse current: 30A Max. off-state voltage: 1kV Case: DO219AA Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |
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| APR34309CMPTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; SO8-EP; flyback; 3.3÷6V; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Supply voltage: 3.3...6V Case: SO8-EP Operating temperature: -40...85°C Mounting: SMD Kind of package: reel; tape Topology: flyback |
Produkt ist nicht verfügbar |
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ZXTP2012ZTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4.3A Power dissipation: 1.5W Case: SOT89 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 2046 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP2012GTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Power dissipation: 1.6W Case: SOT223 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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2DA1201Y-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.8A Power dissipation: 1.5W Case: SOT89 Current gain: 120...240 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 160MHz |
auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.27W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 11.4A Gate charge: 84nC On-state resistance: 35mΩ Pulsed drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2011UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 11.4A Gate charge: 56nC On-state resistance: 35mΩ Pulsed drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 11.4A Pulsed drain current: 80A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 56nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.1W Case: V-DFN2050-4 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 9.8A Gate charge: 56nC On-state resistance: 13mΩ Pulsed drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2014LHAB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.1W Case: U-DFN2030-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 7.4A Gate charge: 16nC On-state resistance: 28mΩ Pulsed drain current: 45A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2015UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 10A Gate charge: 45.6nC On-state resistance: 50mΩ Pulsed drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2015UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.3A Pulsed drain current: 70A Power dissipation: 0.5W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 42.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2016LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.77W Case: U-DFN3030-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±8V Drain current: 4.1A Gate charge: 16nC On-state resistance: 30mΩ Pulsed drain current: 30A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AP2101SG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Kind of integrated circuit: high-side; USB switch Active logical level: low Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD Case: SO8 Output current: 2A On-state resistance: 90mΩ Number of channels: 1 Supply voltage: 2.7...5.5V DC Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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FZT605TA | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 1.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. Current gain: 2000...100000 |
auf Bestellung 1388 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5956B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
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| PAM2401YPADJ | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 0.9÷4.75VDC; Uout: 2.5÷5VDC; 3A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 0.9...4.75V DC Output voltage: 2.5...5V DC Output current: 3A Case: U-DFN3030-12 Mounting: SMD Frequency: 1MHz Topology: boost Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
Produkt ist nicht verfügbar |
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AP7343D-21W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.1V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Tolerance: ±1% Mounting: SMD Case: SOT25 Operating temperature: -40...85°C Kind of package: reel; tape Integrated circuit features: output discharge; shutdown mode control input Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Voltage drop: 0.41V Output voltage: 2.1V Number of channels: 1 Manufacturer series: AP7343 Input voltage: 1.7...5.25V |
Produkt ist nicht verfügbar |
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SMAJ110A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 122÷135V; 2.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...135V Max. forward impulse current: 2.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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DRDNB21D-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; relay controller; 200mA; Ch: 2; open collector Type of integrated circuit: power switch Kind of integrated circuit: relay controller Output current: 0.2A Number of channels: 2 Mounting: SMD Case: SOT363 Kind of package: reel; tape Supply voltage: 50V DC Kind of output: open collector Operating temperature: -55...150°C |
auf Bestellung 2713 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2331W-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: SC59 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTA113ZCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
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| DDTA115ECA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Mounting: SMD Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 82 Quantity in set/package: 3000pcs. Base-emitter resistor: 100kΩ Base resistor: 100kΩ Frequency: 250MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
SMBJ51A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SMBJ51AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SMAJ10AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| P4SMAJ10ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
SMAJ85A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2929 Stücke: Lieferzeit 14-21 Tag (e) |
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| B330B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 80A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
BCX52TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
BCX5210TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMP6018LPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Case: PowerDI5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -240A Drain-source voltage: -60V Drain current: -48A Gate charge: 13.7nC On-state resistance: 26mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMP6018LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Case: PowerDI5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -240A Drain-source voltage: -60V Drain current: -48A Gate charge: 13.7nC On-state resistance: 26mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMP6023LEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
DMP6023LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8 Mounting: SMD Case: SO8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -60V Drain current: -5.3A Gate charge: 53.1nC On-state resistance: 33mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMP6050SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W Mounting: SMD Case: PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -32A Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 50mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMP6050SPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -45A Drain-source voltage: -60V Drain current: -4.5A Gate charge: 30nC On-state resistance: 70mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
DMG3415UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A On-state resistance: 71mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Version: ESD Application: automotive industry |
auf Bestellung 703 Stücke: Lieferzeit 14-21 Tag (e) |
|
| B230-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
auf Bestellung 1898 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| SB3100-T |
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Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 164+ | 0.43 EUR |
| DMN2013UFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 10A
Gate charge: 25.8nC
On-state resistance: 50mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 10A
Gate charge: 25.8nC
On-state resistance: 50mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FZT757TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 30MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 30MHz
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.54 EUR |
| 75+ | 0.96 EUR |
| 118+ | 0.61 EUR |
| 200+ | 0.54 EUR |
| 500+ | 0.48 EUR |
| B250-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 218+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 345+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| SMBJ90A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ90CA-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G34W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of integrated circuit: buffer; non-inverting
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of integrated circuit: buffer; non-inverting
Kind of output: push-pull
auf Bestellung 3041 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 368+ | 0.19 EUR |
| 424+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 618+ | 0.12 EUR |
| 685+ | 0.1 EUR |
| 3000+ | 0.092 EUR |
| 74LVC1G11W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G11FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G11FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4206GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 81+ | 0.89 EUR |
| 104+ | 0.69 EUR |
| 116+ | 0.62 EUR |
| 250+ | 0.54 EUR |
| 500+ | 0.48 EUR |
| DF01S-T |
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Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| AP7375-33W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| AP7375-50SA-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT23; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT23; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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Im Einkaufswagen
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| AP7375-50Y-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT89; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT89; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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Stück im Wert von UAH
| AP7375-33Y-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AP7375Q-50Y-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT89; SMD
Manufacturer series: AP7375Q
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 1.2V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT89; SMD
Manufacturer series: AP7375Q
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 1.2V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| AP7375Q-33SP-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 3.3V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 3.3V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP7375Q-33Y-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Manufacturer series: AP7375Q
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 1.2V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Manufacturer series: AP7375Q
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT89
Output current: 0.35A
Voltage drop: 1.2V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| AP7375Q-50SP-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 5V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 0.35A
Voltage drop: 1.2V
Output voltage: 5V
Input voltage: 3...45V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7375Q
Integrated circuit features: shutdown mode control input
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| AP7375Q-50FDCW-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; uDFN6; SMD
Manufacturer series: AP7375Q
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: uDFN6
Integrated circuit features: shutdown mode control input
Output current: 0.35A
Voltage drop: 1.2V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; uDFN6; SMD
Manufacturer series: AP7375Q
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: uDFN6
Integrated circuit features: shutdown mode control input
Output current: 0.35A
Voltage drop: 1.2V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| FS1MED-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Case: DO219AA
Reverse recovery time: 1µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Case: DO219AA
Reverse recovery time: 1µs
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| APR34309CMPTR-G1 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; SO8-EP; flyback; 3.3÷6V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Supply voltage: 3.3...6V
Case: SO8-EP
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Topology: flyback
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; SO8-EP; flyback; 3.3÷6V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Supply voltage: 3.3...6V
Case: SO8-EP
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Topology: flyback
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| ZXTP2012ZTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 2046 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 169+ | 0.42 EUR |
| 200+ | 0.36 EUR |
| 213+ | 0.34 EUR |
| 250+ | 0.31 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.27 EUR |
| ZXTP2012GTA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 82+ | 0.88 EUR |
| 119+ | 0.6 EUR |
| 2DA1201Y-7 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.8A
Power dissipation: 1.5W
Case: SOT89
Current gain: 120...240
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.8A
Power dissipation: 1.5W
Case: SOT89
Current gain: 120...240
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 388+ | 0.18 EUR |
| 435+ | 0.16 EUR |
| DMN2011UFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.27W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 84nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.27W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 84nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
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| DMN2011UFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 56nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 56nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
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| DMN2011UFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 11.4A
Pulsed drain current: 80A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 11.4A
Pulsed drain current: 80A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN2011UFX-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.1W
Case: V-DFN2050-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 9.8A
Gate charge: 56nC
On-state resistance: 13mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.1W
Case: V-DFN2050-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 9.8A
Gate charge: 56nC
On-state resistance: 13mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
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| DMN2014LHAB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: U-DFN2030-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 7.4A
Gate charge: 16nC
On-state resistance: 28mΩ
Pulsed drain current: 45A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: U-DFN2030-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 7.4A
Gate charge: 16nC
On-state resistance: 28mΩ
Pulsed drain current: 45A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMN2015UFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 10A
Gate charge: 45.6nC
On-state resistance: 50mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 10A
Gate charge: 45.6nC
On-state resistance: 50mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
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Stück im Wert von UAH
| DMN2015UFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.3A
Pulsed drain current: 70A
Power dissipation: 0.5W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.3A
Pulsed drain current: 70A
Power dissipation: 0.5W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN2016LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.77W
Case: U-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 4.1A
Gate charge: 16nC
On-state resistance: 30mΩ
Pulsed drain current: 30A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.77W
Case: U-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 4.1A
Gate charge: 16nC
On-state resistance: 30mΩ
Pulsed drain current: 30A
Kind of channel: enhancement
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| AP2101SG-13 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Output current: 2A
On-state resistance: 90mΩ
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Output current: 2A
On-state resistance: 90mΩ
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: power switch
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| FZT605TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Current gain: 2000...100000
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Current gain: 2000...100000
auf Bestellung 1388 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 164+ | 0.44 EUR |
| 253+ | 0.28 EUR |
| 296+ | 0.24 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 1SMB5956B-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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| PAM2401YPADJ |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.9÷4.75VDC; Uout: 2.5÷5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 0.9...4.75V DC
Output voltage: 2.5...5V DC
Output current: 3A
Case: U-DFN3030-12
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.9÷4.75VDC; Uout: 2.5÷5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 0.9...4.75V DC
Output voltage: 2.5...5V DC
Output current: 3A
Case: U-DFN3030-12
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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| AP7343D-21W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Voltage drop: 0.41V
Output voltage: 2.1V
Number of channels: 1
Manufacturer series: AP7343
Input voltage: 1.7...5.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Voltage drop: 0.41V
Output voltage: 2.1V
Number of channels: 1
Manufacturer series: AP7343
Input voltage: 1.7...5.25V
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| SMAJ110A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 130+ | 0.54 EUR |
| DRDNB21D-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; relay controller; 200mA; Ch: 2; open collector
Type of integrated circuit: power switch
Kind of integrated circuit: relay controller
Output current: 0.2A
Number of channels: 2
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Supply voltage: 50V DC
Kind of output: open collector
Operating temperature: -55...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; relay controller; 200mA; Ch: 2; open collector
Type of integrated circuit: power switch
Kind of integrated circuit: relay controller
Output current: 0.2A
Number of channels: 2
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Supply voltage: 50V DC
Kind of output: open collector
Operating temperature: -55...150°C
auf Bestellung 2713 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 149+ | 0.48 EUR |
| 177+ | 0.4 EUR |
| 230+ | 0.31 EUR |
| 275+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| AP2331W-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 261+ | 0.27 EUR |
| 293+ | 0.24 EUR |
| 343+ | 0.21 EUR |
| 379+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 451+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| DDTA113ZCA-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1800+ | 0.04 EUR |
| 2350+ | 0.03 EUR |
| DDTA115ECA-7-F |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
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| SMBJ51A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ51AQ-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| SMAJ10AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| P4SMAJ10ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ85A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 319+ | 0.22 EUR |
| 562+ | 0.13 EUR |
| 758+ | 0.094 EUR |
| 1000+ | 0.087 EUR |
| B330B-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
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| BCX52TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| BCX5210TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| DMP6018LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP6018LPSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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| DMP6023LEQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMP6023LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -60V
Drain current: -5.3A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -60V
Drain current: -5.3A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP6050SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP6050SPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
Gate charge: 30nC
On-state resistance: 70mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
Gate charge: 30nC
On-state resistance: 70mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMG3415UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 71mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 71mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Version: ESD
Application: automotive industry
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 142+ | 0.51 EUR |
| 161+ | 0.45 EUR |
| 257+ | 0.28 EUR |
| 500+ | 0.2 EUR |

















