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KBP06G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DMG1013UW-7 DMG1013UW-7 DIODES INCORPORATED DMG1013UW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -540mA
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DMG1013UWQ-7 DMG1013UWQ-7 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -540mA
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DMG1013TQ-7 DMG1013TQ-7 DIODES INCORPORATED DMG1013TQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Gate-source voltage: ±6V
Pulsed drain current: -6A
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -330mA
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DMG1013UWQ-13 DMG1013UWQ-13 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Pulsed drain current: -3A
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 13 inch reel; tape
Drain current: -540mA
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ADTC144EUAQ-13 ADTC144EUAQ-13 DIODES INCORPORATED ADTC144EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
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2070+0.035 EUR
2340+0.031 EUR
2605+0.027 EUR
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DDTC144WCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
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ADTC144EUAQ-7 DIODES INCORPORATED ADTC144EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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DDTC144TCA-7-F DIODES INCORPORATED DDTC_R1-ONLY_SERIES_CA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
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ADTC144ECAQ-13 DIODES INCORPORATED ADTC144ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 10000pcs.
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ADTC144ECAQ-7 DIODES INCORPORATED ADTC144ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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ADTC144WCAQ-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC144ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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DDTC144ECAQ-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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AP7167-FNG-7 AP7167-FNG-7 DIODES INCORPORATED AP7167.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN10
Mounting: SMD
Case: DFN10
Number of channels: 1
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1.2A
Voltage drop: 0.8V
Output voltage: 0.8...5V
Tolerance: ±3%
Input voltage: 2.2...5.5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7167
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105+0.69 EUR
147+0.49 EUR
164+0.44 EUR
187+0.38 EUR
250+0.36 EUR
500+0.34 EUR
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AP7173-FNG-7 AP7173-FNG-7 DIODES INCORPORATED AP7173.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; DFN10
Mounting: SMD
Case: DFN10
Number of channels: 1
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1.5A
Voltage drop: 1.7V
Output voltage: 1...5.5V
Tolerance: ±2%
Input voltage: 2.7...5.5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7173
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129+0.56 EUR
172+0.42 EUR
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D5V0M2B3LP-7B DIODES INCORPORATED D5V0M2B3LP.pdf Category: Protection diodes - arrays
Description: D5V0M2B3LP-7B
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DPC817D-A-TU DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: DIP4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: tube
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DPC817D-A-TU-V DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: DIP4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Conform to the norm: VDE
Kind of package: tube
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DPC817D-B-TU DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: DIP4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: tube
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DPC817L-A-TR DIODES INCORPORATED Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SLM-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SLM-4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
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DPC817L-B-TR DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SLM-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SLM-4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
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DPC817L-C-TR DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SLM-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SLM-4
Manufacturer series: DPC817
CTR@If: 200-400%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
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DPC817S-A-TR DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
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DPC817S-B-TR DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
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DPC817S-B-TR-V DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Conform to the norm: VDE
Kind of package: reel; tape
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DPC817S-C-TR DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 200-400%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
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DPC817S-C-TR-V DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 200-400%@5mA
Supply voltage: 1.25...1.5V DC
Conform to the norm: VDE
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAZ12-13-F SMAZ12-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2516 Stücke:
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250+0.29 EUR
424+0.17 EUR
511+0.14 EUR
532+0.13 EUR
575+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
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1SMB5927B-13 1SMB5927B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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228+0.31 EUR
341+0.21 EUR
402+0.17 EUR
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FZT857TA FZT857TA DIODES INCORPORATED FZT857.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
auf Bestellung 395 Stücke:
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48+1.5 EUR
67+1.08 EUR
82+0.87 EUR
108+0.66 EUR
129+0.56 EUR
147+0.49 EUR
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FZT855TA FZT855TA DIODES INCORPORATED FZT855.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 90MHz
auf Bestellung 344 Stücke:
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45+1.6 EUR
67+1.08 EUR
84+0.86 EUR
100+0.78 EUR
200+0.73 EUR
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FZT857QTA FZT857QTA DIODES INCORPORATED FZT857Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
auf Bestellung 911 Stücke:
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36+1.99 EUR
56+1.28 EUR
100+0.81 EUR
500+0.61 EUR
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FZT853TA FZT853TA DIODES INCORPORATED FZT853.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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GBJ1510-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
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AP7311-28WG-7 DIODES INCORPORATED AP7311.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT25; SMD
Mounting: SMD
Manufacturer series: AP7311
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Case: SOT25
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 2.8V
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SMBJ60CA-13-F SMBJ60CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BSN20-7 BSN20-7 DIODES INCORPORATED BSN20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ZXTN25060BFHTA DIODES INCORPORATED ZXTN25060BFH.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 10A
Mounting: SMD
Frequency: 185MHz
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DXTN07060BFG-7 DIODES INCORPORATED DXTN07060BFG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.9W
Case: PowerDI®3333-8
Pulsed collector current: 6A
Mounting: SMD
Frequency: 175MHz
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
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DXTP03060BFG-7 DIODES INCORPORATED DXTP03060BFG.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
Quantity in set/package: 2000pcs.
Current gain: 10...300
Kind of package: reel; tape
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DXTP07060BFGQ-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
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DUP2105SOQ-7 DUP2105SOQ-7 DIODES INCORPORATED DUP2105SOQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 300W; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOT23
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 24V
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.3kW
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544+0.13 EUR
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DMN2080UCB4-7 DIODES INCORPORATED DMN2080UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: X2-WLB0808-4
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1100UCB4-7 DIODES INCORPORATED DMP1100UCB4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Pulsed drain current: -13A
Power dissipation: 1.1W
Case: X2-WLB0808-4
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1011UCB9-7 DIODES INCORPORATED DMP1011UCB9.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Pulsed drain current: -50A
Power dissipation: 1.57W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2036UCB4-7 DIODES INCORPORATED DMN2036UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.45W
Case: X2-WLB1616-4
Gate-source voltage: ±12V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1012UCB9-7 DIODES INCORPORATED DMP1012UCB9.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Pulsed drain current: -50A
Power dissipation: 1.57W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2023UCB4-7 DIODES INCORPORATED DMN2023UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 4.8A
Pulsed drain current: 20A
Power dissipation: 1.45W
Case: X1-WLB1818-4
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2042UCB4-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -16A
Power dissipation: 1.4W
Case: U-WLB1010-4
Gate-source voltage: ±6V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2047UCB4-7 DIODES INCORPORATED DMP2047UCB4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -16A
Power dissipation: 1.66W
Case: U-WLB1010-4
Gate-source voltage: ±6V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1007UCB9-7 DIODES INCORPORATED DMP1007UCB9.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -7.8A
Pulsed drain current: -80A
Power dissipation: 1.53W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SBR20U100CTFP-G DIODES INCORPORATED SBR20U100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; ITO220AB; SBR®
Mounting: THT
Case: ITO220AB
Technology: SBR®
Type of diode: rectifying
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Kind of package: tube
Max. forward impulse current: 200A
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SBRT20U100SLP-13 DIODES INCORPORATED SBRT20U100SLP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD
Mounting: SMD
Case: PowerDI®5060-8
Leakage current: 90µA
Max. forward voltage: 0.7V
Technology: Trench SBR®
Type of diode: Schottky rectifying
Load current: 20A
Semiconductor structure: single diode
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Max. forward impulse current: 180A
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KBP10G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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ZTX601 DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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119+0.6 EUR
500+0.49 EUR
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SMCJ40A-13-F SMCJ40A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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112+0.64 EUR
130+0.55 EUR
219+0.33 EUR
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3.0SMCJ40A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.4÷49.1V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ40A-13-F SMBJ40A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ40AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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KBP06G ds21203.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DMG1013UW-7 DMG1013UW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -540mA
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DMG1013UWQ-7 DMG1013UWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -540mA
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DMG1013TQ-7 DMG1013TQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Mounting: SMD
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Gate-source voltage: ±6V
Pulsed drain current: -6A
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -330mA
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DMG1013UWQ-13 DMG1013UWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Mounting: SMD
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Pulsed drain current: -3A
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 13 inch reel; tape
Drain current: -540mA
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ADTC144EUAQ-13 ADTC144EUAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
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1520+0.047 EUR
2070+0.035 EUR
2340+0.031 EUR
2605+0.027 EUR
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DDTC144WCA-7-F ds30330.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
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ADTC144EUAQ-7 ADTC144EUAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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DDTC144TCA-7-F DDTC_R1-ONLY_SERIES_CA.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
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ADTC144ECAQ-13 ADTC144ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 10000pcs.
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ADTC144ECAQ-7 ADTC144ECAQ.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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ADTC144WCAQ-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DDTC144ECA-7-F ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTC144ECAQ-7-F ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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AP7167-FNG-7 AP7167.pdf
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN10
Mounting: SMD
Case: DFN10
Number of channels: 1
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1.2A
Voltage drop: 0.8V
Output voltage: 0.8...5V
Tolerance: ±3%
Input voltage: 2.2...5.5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7167
auf Bestellung 1244 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
105+0.69 EUR
147+0.49 EUR
164+0.44 EUR
187+0.38 EUR
250+0.36 EUR
500+0.34 EUR
Mindestbestellmenge: 105 Stücke
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AP7173-FNG-7 AP7173.pdf
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; DFN10
Mounting: SMD
Case: DFN10
Number of channels: 1
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1.5A
Voltage drop: 1.7V
Output voltage: 1...5.5V
Tolerance: ±2%
Input voltage: 2.7...5.5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7173
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
129+0.56 EUR
172+0.42 EUR
Mindestbestellmenge: 129 Stücke
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D5V0M2B3LP-7B D5V0M2B3LP.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: D5V0M2B3LP-7B
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
10000+0.089 EUR
Mindestbestellmenge: 10000 Stücke
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DPC817D-A-TU DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: DIP4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
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DPC817D-A-TU-V DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: DIP4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Conform to the norm: VDE
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPC817D-B-TU DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: DIP4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
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DPC817L-A-TR
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SLM-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SLM-4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPC817L-B-TR DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SLM-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SLM-4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DPC817L-C-TR DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SLM-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SLM-4
Manufacturer series: DPC817
CTR@If: 200-400%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DPC817S-A-TR DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 80-160%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPC817S-B-TR DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DPC817S-B-TR-V DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 130-260%@5mA
Supply voltage: 1.25...1.5V DC
Conform to the norm: VDE
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPC817S-C-TR DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 200-400%@5mA
Supply voltage: 1.25...1.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DPC817S-C-TR-V DPC817-Series.pdf
Hersteller: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 5V; SL-4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 5V
Case: SL-4
Manufacturer series: DPC817
CTR@If: 200-400%@5mA
Supply voltage: 1.25...1.5V DC
Conform to the norm: VDE
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAZ12-13-F SMAZx-13-F.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2516 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
250+0.29 EUR
424+0.17 EUR
511+0.14 EUR
532+0.13 EUR
575+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 250 Stücke
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1SMB5927B-13 1SMB59xxB_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
228+0.31 EUR
341+0.21 EUR
402+0.17 EUR
Mindestbestellmenge: 228 Stücke
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FZT857TA FZT857.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
48+1.5 EUR
67+1.08 EUR
82+0.87 EUR
108+0.66 EUR
129+0.56 EUR
147+0.49 EUR
Mindestbestellmenge: 48 Stücke
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FZT855TA FZT855.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 90MHz
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
45+1.6 EUR
67+1.08 EUR
84+0.86 EUR
100+0.78 EUR
200+0.73 EUR
Mindestbestellmenge: 45 Stücke
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FZT857QTA FZT857Q.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
auf Bestellung 911 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+1.99 EUR
56+1.28 EUR
100+0.81 EUR
500+0.61 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FZT853TA FZT853.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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GBJ1510-F GBJ15_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP7311-28WG-7 AP7311.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT25; SMD
Mounting: SMD
Manufacturer series: AP7311
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Case: SOT25
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 2.8V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMBJ60CA-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
358+0.2 EUR
447+0.16 EUR
500+0.14 EUR
633+0.11 EUR
Mindestbestellmenge: 358 Stücke
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BSN20-7 BSN20.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3+23.84 EUR
Mindestbestellmenge: 3 Stücke
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ZXTN25060BFHTA ZXTN25060BFH.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 10A
Mounting: SMD
Frequency: 185MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DXTN07060BFG-7 DXTN07060BFG.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.9W
Case: PowerDI®3333-8
Pulsed collector current: 6A
Mounting: SMD
Frequency: 175MHz
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DXTP03060BFG-7 DXTP03060BFG.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
Quantity in set/package: 2000pcs.
Current gain: 10...300
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DXTP07060BFGQ-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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DUP2105SOQ-7 DUP2105SOQ.pdf
Hersteller: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 300W; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOT23
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 24V
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.3kW
auf Bestellung 1929 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
136+0.53 EUR
179+0.4 EUR
213+0.34 EUR
397+0.18 EUR
544+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 136 Stücke
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DMN2080UCB4-7 DMN2080UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: X2-WLB0808-4
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1100UCB4-7 DMP1100UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Pulsed drain current: -13A
Power dissipation: 1.1W
Case: X2-WLB0808-4
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1011UCB9-7 DMP1011UCB9.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Pulsed drain current: -50A
Power dissipation: 1.57W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2036UCB4-7 DMN2036UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.45W
Case: X2-WLB1616-4
Gate-source voltage: ±12V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1012UCB9-7 DMP1012UCB9.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Pulsed drain current: -50A
Power dissipation: 1.57W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2023UCB4-7 DMN2023UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 4.8A
Pulsed drain current: 20A
Power dissipation: 1.45W
Case: X1-WLB1818-4
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2042UCB4-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -16A
Power dissipation: 1.4W
Case: U-WLB1010-4
Gate-source voltage: ±6V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMP2047UCB4-7 DMP2047UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -16A
Power dissipation: 1.66W
Case: U-WLB1010-4
Gate-source voltage: ±6V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1007UCB9-7 DMP1007UCB9.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -7.8A
Pulsed drain current: -80A
Power dissipation: 1.53W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SBR20U100CTFP-G SBR20U100.pdf
Hersteller: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 200A; ITO220AB; SBR®
Mounting: THT
Case: ITO220AB
Technology: SBR®
Type of diode: rectifying
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Kind of package: tube
Max. forward impulse current: 200A
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SBRT20U100SLP-13 SBRT20U100SLP.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD
Mounting: SMD
Case: PowerDI®5060-8
Leakage current: 90µA
Max. forward voltage: 0.7V
Technology: Trench SBR®
Type of diode: Schottky rectifying
Load current: 20A
Semiconductor structure: single diode
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Max. forward impulse current: 180A
Produkt ist nicht verfügbar
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KBP10G ds21203.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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ZTX601 ZTX600.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
48+1.5 EUR
87+0.83 EUR
119+0.6 EUR
500+0.49 EUR
1000+0.45 EUR
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SMCJ40A-13-F SMCJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
90+0.8 EUR
112+0.64 EUR
130+0.55 EUR
219+0.33 EUR
Mindestbestellmenge: 90 Stücke
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3.0SMCJ40A-13 3.0SMCJxx.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.4÷49.1V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMBJ40A-13-F SMBJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ40AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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