DMC4028SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 40V 6.5A/4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.53 EUR |
| 12500+ | 0.51 EUR |
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Technische Details DMC4028SSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 6.5A/4.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMC4028SSD-13 nach Preis ab 0.59 EUR bis 1.47 EUR
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DMC4028SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 40V 6.5A/4.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 23000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4028SSD-13 | Hersteller : Diodes Incorporated |
MOSFET 40V Comp Dual ENH Low On-Resistance |
auf Bestellung 3426 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4028SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Kind of transistor: complementary pair Gate-source voltage: ±20V Kind of channel: enhanced Drain-source voltage: 40/-40V Drain current: 5.5/-4.2A On-state resistance: 0.028/0.05Ω Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC4028SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Kind of transistor: complementary pair Gate-source voltage: ±20V Kind of channel: enhanced Drain-source voltage: 40/-40V Drain current: 5.5/-4.2A On-state resistance: 0.028/0.05Ω Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |