Technische Details DMG4511SK4-13 Diodes Zetex
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm, tariffCode: 85411000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 5.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 35V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 5.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm, Verlustleistung, p-Kanal: 1.54W, Drain-Source-Spannung Vds, n-Kanal: 35V, euEccn: NLR, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 4Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.54W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote DMG4511SK4-13 nach Preis ab 0.49 EUR bis 2.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMG4511SK4-13 | DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Mounting: SMD Power dissipation: 1.54W Polarisation: unipolar Drain current: 7.8/-8.6A Kind of channel: enhancement Drain-source voltage: 35/-35V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Semiconductor structure: common drain Case: TO252-4 On-state resistance: 0.035/0.045Ω |
auf Bestellung 2417 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4511SK4-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K |
auf Bestellung 2273 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4511SK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4511SK4-13 | DIODES INC. |
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 35V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm Verlustleistung, p-Kanal: 1.54W Drain-Source-Spannung Vds, n-Kanal: 35V euEccn: NLR Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 4Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.54W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1687 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4511SK4-13 | DIODES INC. |
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 35V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm Verlustleistung, p-Kanal: 1.54W Drain-Source-Spannung Vds, n-Kanal: 35V euEccn: NLR Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 4Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.54W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1687 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
Power dissipation: 1.54W
Polarisation: unipolar
Drain current: 7.8/-8.6A
Kind of channel: enhancement
Drain-source voltage: 35/-35V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 0.035/0.045Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
Power dissipation: 1.54W
Polarisation: unipolar
Drain current: 7.8/-8.6A
Kind of channel: enhancement
Drain-source voltage: 35/-35V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 0.035/0.045Ω
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 86+ | 1 EUR |
| 130+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.49 EUR |
| DMG4511SK4-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K
MOSFETs MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.56 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.69 EUR |
| DMG4511SK4-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 13+ | 1.68 EUR |
| 25+ | 1.42 EUR |
| 50+ | 1.25 EUR |
| DMG4511SK4-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 35V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.54W
Drain-Source-Spannung Vds, n-Kanal: 35V
euEccn: NLR
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.54W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 35V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.54W
Drain-Source-Spannung Vds, n-Kanal: 35V
euEccn: NLR
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.54W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1687 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 89+ | 2.82 EUR |
| 143+ | 1.63 EUR |
| 216+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| DMG4511SK4-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 35V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.54W
Drain-Source-Spannung Vds, n-Kanal: 35V
euEccn: NLR
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.54W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 35V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.54W
Drain-Source-Spannung Vds, n-Kanal: 35V
euEccn: NLR
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.54W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1687 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.82 EUR |
| 143+ | 1.63 EUR |
| 216+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |