DMG4511SK4-13 Diodes Zetex
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.37 EUR |
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Technische Details DMG4511SK4-13 Diodes Zetex
Description: MOSFET N/P-CH 35V 5.3A TO252-4L, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.54W, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-4L, Part Status: Active.
Weitere Produktangebote DMG4511SK4-13 nach Preis ab 0.41 EUR bis 1.94 EUR
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DMG4511SK4-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N/P-CH 35V 5.3A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4511SK4-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Semiconductor structure: common drain Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A On-state resistance: 0.035/0.045Ω Type of transistor: N/P-MOSFET Power dissipation: 1.54W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: TO252-4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2443 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG4511SK4-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Semiconductor structure: common drain Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A On-state resistance: 0.035/0.045Ω Type of transistor: N/P-MOSFET Power dissipation: 1.54W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: TO252-4 |
auf Bestellung 2443 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4511SK4-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K |
auf Bestellung 3345 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4511SK4-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
auf Bestellung 14861 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4511SK4-13 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMG4511SK4-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R |
Produkt ist nicht verfügbar |