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DMG9926UDM-7

DMG9926UDM-7 Diodes Incorporated


ds31770.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 72000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
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Technische Details DMG9926UDM-7 Diodes Incorporated

Description: MOSFET 2N-CH 20V 4.2A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 980mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.2A, Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-26, Part Status: Active.

Weitere Produktangebote DMG9926UDM-7 nach Preis ab 0.35 EUR bis 1.21 EUR

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DMG9926UDM-7 DMG9926UDM-7 Hersteller : Diodes Incorporated ds31770.pdf Description: MOSFET 2N-CH 20V 4.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 79378 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
36+ 0.74 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 31
DMG9926UDM-7 DMG9926UDM-7 Hersteller : Diodes Incorporated ds31770.pdf MOSFET MOSFET SOT-26 20V, 3.2/4.2A
auf Bestellung 11830 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
44+1.21 EUR
52+ 1.02 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.46 EUR
3000+ 0.4 EUR
Mindestbestellmenge: 44
DMG9926UDM-7
Produktcode: 184263
ds31770.pdf IC > IC andere
Produkt ist nicht verfügbar
DMG9926UDM-7 DMG9926UDM-7 Hersteller : Diodes Inc ds31770.pdf Trans MOSFET N-CH 20V 4.2A 6-Pin SOT-26 T/R
Produkt ist nicht verfügbar
DMG9926UDM-7 DMG9926UDM-7 Hersteller : DIODES INCORPORATED ds31770.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9926UDM-7 DMG9926UDM-7 Hersteller : DIODES INCORPORATED ds31770.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMG9926UDM-7
Produktcode: 184264
ds31770.pdf IC > IC Analog
Produkt ist nicht verfügbar