Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74814) > Seite 1216 nach 1247
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ZLLS350TA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape Type of diode: Schottky rectifying Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.38A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 1.3A Kind of package: reel; tape Power dissipation: 0.357W |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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| DXT2013P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 3.2W Case: PowerDI®5 Pulsed collector current: 10A Current gain: 5...300 Mounting: SMD Quantity in set/package: 5000pcs. Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
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| DXT2012P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Power dissipation: 3.2W Case: PowerDI®5 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 5000pcs. Kind of package: reel; tape Frequency: 120MHz |
Produkt ist nicht verfügbar |
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AZ23C3V0-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; double,common anode Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3V Tolerance: ±5% Semiconductor structure: common anode; double |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| FZT751QTC | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FZT751TC | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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SBRT5A50SA-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR® Mounting: SMD Load current: 5A Max. forward voltage: 0.46V Max. forward impulse current: 70A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Type of diode: rectifying Technology: SBR® |
auf Bestellung 4475 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C3V9-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 926 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAV70Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Max. load current: 0.45A Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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74LVC1G126W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Operating temperature: -40...125°C Kind of output: 3-state Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Quiescent current: 200µA Manufacturer series: LVC |
auf Bestellung 722 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74LVC1G126FW4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Operating temperature: -40...150°C Kind of output: 3-state Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC1G126FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1410-6 Operating temperature: -40...150°C Kind of output: 3-state Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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ZXMHC6A07T8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 1.4/-1.2A Power dissipation: 1.3W Case: SOT223-8 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
auf Bestellung 2748 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMHC3F381N8TC | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3.98/-3.36A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 22.9...-19.6A |
Produkt ist nicht verfügbar |
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MMSZ5245B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener Power dissipation: 0.37/0.5W Tolerance: ±5% Zener voltage: 15V Kind of package: reel; tape |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5245BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener Power dissipation: 0.2W Tolerance: ±5% Zener voltage: 15V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MMSZ5245BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode Application: automotive industry Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener Power dissipation: 0.37/0.5W Tolerance: ±5% Zener voltage: 15V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| B2100Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.79V Max. forward impulse current: 50A Leakage current: 2mA Capacitance: 75pF Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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ZVN3320FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60mA Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2992 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT458TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 2W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 50MHz Current gain: 100...300 |
auf Bestellung 902 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW156Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: common anode; double Capacitance: 3pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
auf Bestellung 6708 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW156TQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common anode; double Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FES1GE | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXTN25020DGTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| P4SMAJ15ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC846BLP4-7B | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 1W Case: X2-DFN1006-3 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMSZ5242BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
auf Bestellung 2296 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMAJ15CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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DDTC143ZCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC143ZUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
auf Bestellung 1189 Stücke: Lieferzeit 14-21 Tag (e) |
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| TB0900H-13-F | DIODES INCORPORATED |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional Type of thyristor: TSS Max. off-state voltage: 75V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 100A Semiconductor structure: bidirectional Breakover voltage: 98V |
Produkt ist nicht verfügbar |
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DMN6068SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2553 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTN25020DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 215MHz |
auf Bestellung 2862 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2300UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.96A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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| DMN2300UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.94A Pulsed drain current: 8A Power dissipation: 1.2W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 0.89nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2300UFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.34A Pulsed drain current: 6A Power dissipation: 0.47W Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| DMN2300UFL4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.19A Pulsed drain current: 6A Power dissipation: 1.39W Case: X2-DFN1310-6 Gate-source voltage: ±8V On-state resistance: 0.52Ω Mounting: SMD Gate charge: 3.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BAT54TW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: triple independent Capacitance: 10pF Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54BRW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series x2 Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) |
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| SDT10A45P5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape Mounting: SMD Case: PowerDI®5 Type of diode: Schottky rectifying Leakage current: 80mA Max. forward voltage: 0.47V Load current: 10A Max. off-state voltage: 45V Max. forward impulse current: 180A Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| SDT10A45P5-13D | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape Mounting: SMD Case: PowerDI®5 Type of diode: Schottky rectifying Leakage current: 80mA Max. forward voltage: 0.47V Load current: 10A Max. off-state voltage: 45V Max. forward impulse current: 180A Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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MMBTA14-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| PAM8302AAYCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Operating temperature: -40...85°C Output power: 2.5W Voltage supply range: 2...5.5V DC Kind of package: reel; tape Amplifier class: D Integrated circuit features: low noise; thermal protection Case: U-DFN3030-8 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 |
Produkt ist nicht verfügbar |
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| SMAJ26AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DGD0506AM10-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10 Case: MSOP10 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Mounting: SMD Operating temperature: -40...125°C Supply voltage: 8...14V Output current: -2...1.5A Pulse fall time: 25ns Impulse rise time: 35ns Number of channels: 1 Topology: MOSFET half-bridge |
Produkt ist nicht verfügbar |
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| DGD0506AFN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A Case: WDFN3030-10 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Mounting: SMD Operating temperature: -40...125°C Supply voltage: 8...14V Output current: -2...1.5A Pulse fall time: 25ns Impulse rise time: 35ns Number of channels: 1 Topology: MOSFET half-bridge |
Produkt ist nicht verfügbar |
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| 74LVC04AS14-13 | DIODES INCORPORATED |
Category: Integrated circuits - UnclassifiedDescription: 74LVC04AS14-13 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ36A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMCJ36AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMP2110UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: DMP2110UFDB-7 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2110UFDBQ-7 | DIODES INCORPORATED |
Category: Transistors - UnclassifiedDescription: DMP2110UFDBQ-7 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C8V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 1578 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C8V2-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 4820 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C8V2Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DESD5V0S1BA-7 | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Number of channels: 1 Kind of package: reel; tape |
auf Bestellung 1313 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ54A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1961 Stücke: Lieferzeit 14-21 Tag (e) |
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APX803-26SAG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Kind of package: reel; tape Mounting: SMD Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Case: SOT23 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 30µA Maximum output current: 20mA Delay time: 200ms Number of channels: 1 Supply voltage: 1.1...5.5V DC Threshold on-voltage: 2.63V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| KBP306G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 3A Max. forward impulse current: 90A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AP7173-SPG-13 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD Number of channels: 1 Output voltage: 1...5.5V Tolerance: ±2% Input voltage: 2.7...5.5V Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: AP7173 Type of integrated circuit: voltage regulator Kind of package: reel; tape Mounting: SMD Case: SO8-EP Operating temperature: -40...85°C Voltage drop: 1.7V Output current: 1.5A |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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AP8802SPG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92% Input voltage: 8...48V DC Efficiency: 92% Frequency: 700kHz Topology: buck Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Case: SO8-EP Operating temperature: -40...105°C Output current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZLLS350TA |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1.3A
Kind of package: reel; tape
Power dissipation: 0.357W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1.3A
Kind of package: reel; tape
Power dissipation: 0.357W
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 191+ | 0.37 EUR |
| 242+ | 0.3 EUR |
| 268+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| DXT2013P5-13 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 10A
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 10A
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DXT2012P5-13 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AZ23C3V0-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Tolerance: ±5%
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Tolerance: ±5%
Semiconductor structure: common anode; double
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.46 EUR |
| FZT751QTC |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.21 EUR |
| FZT751TC |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.28 EUR |
| SBRT5A50SA-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR®
Mounting: SMD
Load current: 5A
Max. forward voltage: 0.46V
Max. forward impulse current: 70A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Type of diode: rectifying
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; SBR®
Mounting: SMD
Load current: 5A
Max. forward voltage: 0.46V
Max. forward impulse current: 70A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Type of diode: rectifying
Technology: SBR®
auf Bestellung 4475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 222+ | 0.32 EUR |
| 280+ | 0.26 EUR |
| 404+ | 0.18 EUR |
| 428+ | 0.17 EUR |
| 3000+ | 0.16 EUR |
| BZT52C3V9-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 848+ | 0.084 EUR |
| 926+ | 0.077 EUR |
| BAV70Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.45A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.45A
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G126W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 200µA
Manufacturer series: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 200µA
Manufacturer series: LVC
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 338+ | 0.21 EUR |
| 424+ | 0.17 EUR |
| 722+ | 0.099 EUR |
| 74LVC1G126FW4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G126FZ4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMHC6A07T8TA |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.3W
Case: SOT223-8
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.3W
Case: SOT223-8
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2748 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| 43+ | 1.67 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.3 EUR |
| ZXMHC3F381N8TC |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5245B-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1087+ | 0.066 EUR |
| 1701+ | 0.042 EUR |
| 2273+ | 0.031 EUR |
| 2430+ | 0.03 EUR |
| MMSZ5245BS-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5245BQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B2100Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 2mA
Capacitance: 75pF
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 2mA
Capacitance: 75pF
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN3320FTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2992 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 268+ | 0.27 EUR |
| 325+ | 0.22 EUR |
| 355+ | 0.2 EUR |
| 394+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| FZT458TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 100...300
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 105+ | 0.68 EUR |
| 143+ | 0.5 EUR |
| 162+ | 0.44 EUR |
| 200+ | 0.39 EUR |
| 500+ | 0.34 EUR |
| BAW156Q-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Capacitance: 3pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Capacitance: 3pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
auf Bestellung 6708 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1352+ | 0.053 EUR |
| 2718+ | 0.026 EUR |
| 3068+ | 0.023 EUR |
| 3402+ | 0.021 EUR |
| BAW156TQ-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 211+ | 0.34 EUR |
| 421+ | 0.17 EUR |
| 803+ | 0.089 EUR |
| 1000+ | 0.077 EUR |
| 3000+ | 0.064 EUR |
| FES1GE |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.058 EUR |
| ZXTN25020DGTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.49 EUR |
| P4SMAJ15ADF-13 |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.13 EUR |
| BC846BLP4-7B |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5242BS-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 2296 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 581+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 834+ | 0.086 EUR |
| 1356+ | 0.053 EUR |
| 1743+ | 0.041 EUR |
| 2273+ | 0.031 EUR |
| SMAJ15CAQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDTC143ZCA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 188+ | 0.39 EUR |
| DDTC143ZUA-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
auf Bestellung 1189 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 569+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 1011+ | 0.071 EUR |
| 1189+ | 0.06 EUR |
| TB0900H-13-F |
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Hersteller: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 75V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 98V
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 75V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 98V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN6068SE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2553 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 138+ | 0.52 EUR |
| 179+ | 0.4 EUR |
| 200+ | 0.36 EUR |
| 250+ | 0.31 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.23 EUR |
| ZXTN25020DFHTA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
auf Bestellung 2862 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 103+ | 0.69 EUR |
| 152+ | 0.47 EUR |
| 212+ | 0.34 EUR |
| 225+ | 0.32 EUR |
| DMN2300UFB4-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN2300UFB-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN2300UFD-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN2300UFL4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54TW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 224+ | 0.32 EUR |
| 311+ | 0.23 EUR |
| 363+ | 0.2 EUR |
| 848+ | 0.084 EUR |
| 893+ | 0.08 EUR |
| BAT54BRW-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 199+ | 0.36 EUR |
| 254+ | 0.28 EUR |
| 285+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| SDT10A45P5-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDT10A45P5-13D |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA14-7-F |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Quantity in set/package: 3000pcs.
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| PAM8302AAYCR |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Output power: 2.5W
Voltage supply range: 2...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Output power: 2.5W
Voltage supply range: 2...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
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| SMAJ26AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| DGD0506AM10-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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| DGD0506AFN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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| 74LVC04AS14-13 |
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Hersteller: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: 74LVC04AS14-13
Category: Integrated circuits - Unclassified
Description: 74LVC04AS14-13
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.11 EUR |
| SMCJ36A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| SMCJ36AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| DMP2110UFDB-7 |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| DMP2110UFDBQ-7 |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| BZX84C8V2-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 1578 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1516+ | 0.047 EUR |
| 1578+ | 0.046 EUR |
| BZX84C8V2-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 4820 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1640+ | 0.044 EUR |
| 3040+ | 0.024 EUR |
| 3440+ | 0.021 EUR |
| 3680+ | 0.019 EUR |
| BZX84C8V2Q-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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| DESD5V0S1BA-7 |
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Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 1313 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 374+ | 0.19 EUR |
| 583+ | 0.12 EUR |
| 718+ | 0.1 EUR |
| 1119+ | 0.064 EUR |
| SMCJ54A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1961 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 151+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| 231+ | 0.31 EUR |
| APX803-26SAG-7 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Kind of package: reel; tape
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Kind of package: reel; tape
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 178+ | 0.4 EUR |
| 223+ | 0.32 EUR |
| 309+ | 0.23 EUR |
| 376+ | 0.19 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| KBP306G |
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Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| AP7173-SPG-13 |
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Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD
Number of channels: 1
Output voltage: 1...5.5V
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7173
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Case: SO8-EP
Operating temperature: -40...85°C
Voltage drop: 1.7V
Output current: 1.5A
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD
Number of channels: 1
Output voltage: 1...5.5V
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7173
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Case: SO8-EP
Operating temperature: -40...85°C
Voltage drop: 1.7V
Output current: 1.5A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 152+ | 0.47 EUR |
| 171+ | 0.42 EUR |
| 261+ | 0.27 EUR |
| 275+ | 0.26 EUR |
| AP8802SPG-13 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92%
Input voltage: 8...48V DC
Efficiency: 92%
Frequency: 700kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Case: SO8-EP
Operating temperature: -40...105°C
Output current: 1A
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92%
Input voltage: 8...48V DC
Efficiency: 92%
Frequency: 700kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Case: SO8-EP
Operating temperature: -40...105°C
Output current: 1A
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