DMG2307L-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.14 EUR |
| 75000+ | 0.12 EUR |
| 150000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG2307L-7 Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 760mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote DMG2307L-7 nach Preis ab 0.12 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMG2307L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A On-state resistance: 0.134Ω Power dissipation: 0.76W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
auf Bestellung 1376 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DMG2307L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V |
auf Bestellung 674279 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMG2307L-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K |
auf Bestellung 49589 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG2307L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 1376 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 0.48 EUR |
| 258+ | 0.33 EUR |
| 363+ | 0.24 EUR |
| 422+ | 0.2 EUR |
| 601+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DMG2307L-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
auf Bestellung 674279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 40+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.19 EUR |
| DMG2307L-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K
MOSFETs MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K
auf Bestellung 49589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.76 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.14 EUR |