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DMG2307L-7

DMG2307L-7 Diodes Incorporated

DMG2307L.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 674000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
9000+0.12 EUR
75000+0.1 EUR
150000+0.097 EUR
Mindestbestellmenge: 3000
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Technische Details DMG2307L-7 Diodes Incorporated

Description: MOSFET P-CH 30V 2.5A SOT-23, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 760mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.

Weitere Produktangebote DMG2307L-7 nach Preis ab 0.1 EUR bis 0.64 EUR

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DMG2307L-7 DMG2307L-7 Hersteller : DIODES INCORPORATED DMG2307L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.134Ω
Power dissipation: 0.76W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 1376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
258+0.28 EUR
363+0.2 EUR
422+0.17 EUR
601+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
DMG2307L-7 DMG2307L-7 Hersteller : Diodes Incorporated DMG2307L.pdf Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
auf Bestellung 674279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
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DMG2307L-7 DMG2307L-7 Hersteller : Diodes Incorporated DMG2307L.pdf MOSFETs MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K
auf Bestellung 49589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
3000+0.12 EUR
Mindestbestellmenge: 5
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DMG2307L-7 Hersteller : Diodes DMG2307L.pdf MOSFET P-CH 30V 2.5A SOT-23 Група товару: Транзистори Од. вим: шт
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