DXT2011P5Q-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.51 EUR |
| 10000+ | 0.48 EUR |
| 15000+ | 0.46 EUR |
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Technische Details DXT2011P5Q-13 Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5, Power - Max: 3.2 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 6 A, Part Status: Active, Supplier Device Package: PowerDI™ 5, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: PowerDI™ 5, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote DXT2011P5Q-13 nach Preis ab 0.48 EUR bis 2.23 EUR
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DXT2011P5Q-13 | Diodes Incorporated |
Description: TRANS NPN 100V 6A POWERDI 5 Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: PowerDI™ 5 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 28036 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2011P5Q-13 | Diodes Incorporated |
Bipolar Transistors - BJT 100V NPN Pwr Low Sat. Transistor |
auf Bestellung 1360 Stücke: Lieferzeit 10-14 Tag (e) |
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| DXT2011P5Q-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN 100V 6A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 28036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 16+ | 1.38 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.58 EUR |
| DXT2011P5Q-13 |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 100V NPN Pwr Low Sat. Transistor
Bipolar Transistors - BJT 100V NPN Pwr Low Sat. Transistor
auf Bestellung 1360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.23 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.56 EUR |
| 5000+ | 0.48 EUR |