Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79411) > Seite 1218 nach 1324
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT2004UFG-7 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Gate charge: 53.7nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 55A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Anzahl je Verpackung: 2000 Stücke |
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| DMT2004UFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 53.7nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 55A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT2004UFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Gate charge: 53.7nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 55A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
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| DMT2005UDV-13 | DIODES INCORPORATED |
DMT2005UDV-13 SMD N channel transistors |
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| DMT3003LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 44nC On-state resistance: 5.5mΩ Power dissipation: 2.4W Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3003LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 44nC On-state resistance: 5.5mΩ Power dissipation: 2.4W Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke |
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| DMT3003LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 44nC On-state resistance: 5.5mΩ Power dissipation: 2.4W Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke |
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| DMT3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: -16...20V Gate charge: 43.7nC On-state resistance: 6mΩ Power dissipation: 2.7W Drain current: 17A Drain-source voltage: 30V Pulsed drain current: 180A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
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| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 12.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
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| DMT3006LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 12.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 12.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT3006LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 10mΩ Power dissipation: 27.8W Drain current: 12.8A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3006LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 10mΩ Power dissipation: 27.8W Drain current: 12.8A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke |
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| DMT3006LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 11mΩ Power dissipation: 2W Drain current: 45A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3006LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 11mΩ Power dissipation: 2W Drain current: 45A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3006LPB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12.6nC On-state resistance: 14mΩ Power dissipation: 1.7W Drain current: 9/11A Drain-source voltage: 30V Pulsed drain current: 80...100A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
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| DMT3009LDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: -16...20V Gate charge: 20nC On-state resistance: 22mΩ Power dissipation: 1.2W Drain current: 11A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 10A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT3009LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 10A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 10A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT3009UFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±12V Gate charge: 14.6nC On-state resistance: 13mΩ Power dissipation: 2.6W Drain current: 8.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.9W Drain current: 25A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
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| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
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| DMT3020LFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
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| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 0.4W Drain current: 6.7A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Case: SO8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.5W Drain current: 13A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
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| DMT3020UFDB-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±12V Gate charge: 8.8nC On-state resistance: 30mΩ Power dissipation: 1.3W Drain current: 5.2A Drain-source voltage: 30V Pulsed drain current: 35A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 10000 Stücke |
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| DMT30M9LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 160.5nC On-state resistance: 1.6mΩ Power dissipation: 2.6W Drain current: 100A Drain-source voltage: 30V Pulsed drain current: 400A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
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| DMT31M6LPS-13 | DIODES INCORPORATED |
DMT31M6LPS-13 SMD N channel transistors |
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| DMT32M5LFG-13 | DIODES INCORPORATED |
DMT32M5LFG-13 SMD N channel transistors |
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| DMT32M5LFG-7 | DIODES INCORPORATED |
DMT32M5LFG-7 SMD N channel transistors |
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| DMT32M5LPS-13 | DIODES INCORPORATED |
DMT32M5LPS-13 SMD N channel transistors |
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| DMT34M1LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 5.2mΩ Drain current: 80A Drain-source voltage: 30V Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Case: PowerDI®5060-8 Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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| DMT35M4LFDF-7 | DIODES INCORPORATED |
DMT35M4LFDF-7 SMD N channel transistors |
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| DMT35M4LFVW-7 | DIODES INCORPORATED |
DMT35M4LFVW-7 SMD N channel transistors |
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| DMT35M7LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Power dissipation: 1.98W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 36nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMT36M1LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate charge: 16.7nC On-state resistance: 9.8mΩ Power dissipation: 2.6W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 100A Kind of package: 13 inch reel; tape Drain-source voltage: 30V Anzahl je Verpackung: 2500 Stücke |
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| DMT4002LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 2.3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 116.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 200A Anzahl je Verpackung: 2500 Stücke |
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DMT4003SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB Case: TO220AB Drain-source voltage: 40V Drain current: 164A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: tube Gate charge: 75.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 350A Mounting: THT Anzahl je Verpackung: 1 Stücke |
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| DMT4004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Gate charge: 82.2nC On-state resistance: 4mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 40V Pulsed drain current: 100A Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
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DMT4005SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Drain-source voltage: 40V Drain current: 85A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Gate charge: 49.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMT4008LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 9.7A On-state resistance: 12mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT4011LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: -16...20V Gate charge: 15.1nC On-state resistance: 17.8mΩ Power dissipation: 2W Drain current: 8.6A Drain-source voltage: 40V Pulsed drain current: 65A Kind of package: 13 inch reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT4011LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: -16...20V Gate charge: 15.1nC On-state resistance: 17.8mΩ Power dissipation: 2W Drain current: 8.6A Drain-source voltage: 40V Pulsed drain current: 65A Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT47M2LDV-7 | DIODES INCORPORATED |
DMT47M2LDV-7 Multi channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT47M2LDVQ-7 | DIODES INCORPORATED |
DMT47M2LDVQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT47M2SFVW-7 | DIODES INCORPORATED |
DMT47M2SFVW-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT47M2SFVWQ-13 | DIODES INCORPORATED |
DMT47M2SFVWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT47M2SFVWQ-7 | DIODES INCORPORATED |
DMT47M2SFVWQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMT5015LFDF-13 | DIODES INCORPORATED | DMT5015LFDF-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT5015LFDF-7 | DIODES INCORPORATED | DMT5015LFDF-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT6002LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 130.8nC On-state resistance: 3mΩ Power dissipation: 2.3W Drain current: 100A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMT6004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 78.3nC On-state resistance: 4.5mΩ Power dissipation: 2.5W Drain current: 16A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
DMT6004SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Case: TO220AB Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 95.4nC On-state resistance: 3.1mΩ Power dissipation: 113W Drain current: 100A Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 60V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMT6004SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 95.4nC On-state resistance: 3.1mΩ Power dissipation: 2.6W Drain current: 18A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMT2004UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT2004UFV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT2004UFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT2005UDV-13 |
|
Hersteller: DIODES INCORPORATED
DMT2005UDV-13 SMD N channel transistors
DMT2005UDV-13 SMD N channel transistors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3003LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3003LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3003LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 11mΩ
Power dissipation: 2W
Drain current: 45A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 11mΩ
Power dissipation: 2W
Drain current: 45A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LFVQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 11mΩ
Power dissipation: 2W
Drain current: 45A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 11mΩ
Power dissipation: 2W
Drain current: 45A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3006LPB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12.6nC
On-state resistance: 14mΩ
Power dissipation: 1.7W
Drain current: 9/11A
Drain-source voltage: 30V
Pulsed drain current: 80...100A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12.6nC
On-state resistance: 14mΩ
Power dissipation: 1.7W
Drain current: 9/11A
Drain-source voltage: 30V
Pulsed drain current: 80...100A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
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| DMT3009LDT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 20nC
On-state resistance: 22mΩ
Power dissipation: 1.2W
Drain current: 11A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 20nC
On-state resistance: 22mΩ
Power dissipation: 1.2W
Drain current: 11A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
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| DMT3009LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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| DMT3009LFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
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| DMT3009LFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3009UFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 14.6nC
On-state resistance: 13mΩ
Power dissipation: 2.6W
Drain current: 8.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 14.6nC
On-state resistance: 13mΩ
Power dissipation: 2.6W
Drain current: 8.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LDV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.9W
Drain current: 25A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.9W
Drain current: 25A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDBQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDBQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LFDFQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT3020LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 10000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT30M9LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT31M6LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMT31M6LPS-13 SMD N channel transistors
DMT31M6LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT32M5LFG-13 |
|
Hersteller: DIODES INCORPORATED
DMT32M5LFG-13 SMD N channel transistors
DMT32M5LFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
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| DMT32M5LFG-7 |
|
Hersteller: DIODES INCORPORATED
DMT32M5LFG-7 SMD N channel transistors
DMT32M5LFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT32M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMT32M5LPS-13 SMD N channel transistors
DMT32M5LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT34M1LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Drain current: 80A
Drain-source voltage: 30V
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Case: PowerDI®5060-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Drain current: 80A
Drain-source voltage: 30V
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Case: PowerDI®5060-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMT35M4LFDF-7 |
|
Hersteller: DIODES INCORPORATED
DMT35M4LFDF-7 SMD N channel transistors
DMT35M4LFDF-7 SMD N channel transistors
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| DMT35M4LFVW-7 |
|
Hersteller: DIODES INCORPORATED
DMT35M4LFVW-7 SMD N channel transistors
DMT35M4LFVW-7 SMD N channel transistors
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| DMT35M7LFV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
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| DMT36M1LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.7nC
On-state resistance: 9.8mΩ
Power dissipation: 2.6W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Drain-source voltage: 30V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.7nC
On-state resistance: 9.8mΩ
Power dissipation: 2.6W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Drain-source voltage: 30V
Anzahl je Verpackung: 2500 Stücke
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| DMT4002LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 116.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 116.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Anzahl je Verpackung: 2500 Stücke
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| DMT4003SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 164A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: tube
Gate charge: 75.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 164A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: tube
Gate charge: 75.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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| DMT4004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
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| DMT4005SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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| DMT4008LFV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
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| DMT4011LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Gate charge: 15.1nC
On-state resistance: 17.8mΩ
Power dissipation: 2W
Drain current: 8.6A
Drain-source voltage: 40V
Pulsed drain current: 65A
Kind of package: 13 inch reel; tape
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Gate charge: 15.1nC
On-state resistance: 17.8mΩ
Power dissipation: 2W
Drain current: 8.6A
Drain-source voltage: 40V
Pulsed drain current: 65A
Kind of package: 13 inch reel; tape
Anzahl je Verpackung: 3000 Stücke
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| DMT4011LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Gate charge: 15.1nC
On-state resistance: 17.8mΩ
Power dissipation: 2W
Drain current: 8.6A
Drain-source voltage: 40V
Pulsed drain current: 65A
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Gate charge: 15.1nC
On-state resistance: 17.8mΩ
Power dissipation: 2W
Drain current: 8.6A
Drain-source voltage: 40V
Pulsed drain current: 65A
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
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| DMT47M2LDV-7 |
|
Hersteller: DIODES INCORPORATED
DMT47M2LDV-7 Multi channel transistors
DMT47M2LDV-7 Multi channel transistors
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| DMT47M2LDVQ-7 |
|
Hersteller: DIODES INCORPORATED
DMT47M2LDVQ-7 SMD N channel transistors
DMT47M2LDVQ-7 SMD N channel transistors
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| DMT47M2SFVW-7 |
|
Hersteller: DIODES INCORPORATED
DMT47M2SFVW-7 SMD N channel transistors
DMT47M2SFVW-7 SMD N channel transistors
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| DMT47M2SFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMT47M2SFVWQ-13 SMD N channel transistors
DMT47M2SFVWQ-13 SMD N channel transistors
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| DMT47M2SFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
DMT47M2SFVWQ-7 SMD N channel transistors
DMT47M2SFVWQ-7 SMD N channel transistors
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| DMT5015LFDF-13 |
Hersteller: DIODES INCORPORATED
DMT5015LFDF-13 SMD N channel transistors
DMT5015LFDF-13 SMD N channel transistors
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| DMT5015LFDF-7 |
Hersteller: DIODES INCORPORATED
DMT5015LFDF-7 SMD N channel transistors
DMT5015LFDF-7 SMD N channel transistors
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| DMT6002LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
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| DMT6004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
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| DMT6004SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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| DMT6004SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
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