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AP431SHBRTR-G1 AP431SHBRTR-G1 Diodes Incorporated AP431S.pdf Description: IC VREF SHUNT ADJ 1% SOT89-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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35+0.51 EUR
42+0.42 EUR
100+0.32 EUR
250+0.27 EUR
500+0.24 EUR
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D3Z4V3BF-7 D3Z4V3BF-7 Diodes Incorporated D3ZxVxBF.pdf Description: DIODE ZENER 4.33V 400MW SOD323F
Tolerance: ±4%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.33 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
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D3Z4V3BF-7 D3Z4V3BF-7 Diodes Incorporated D3ZxVxBF.pdf Description: DIODE ZENER 4.33V 400MW SOD323F
Tolerance: ±4%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.33 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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UDZ4V3B-7 UDZ4V3B-7 Diodes Incorporated ds30290.pdf Description: DIODE ZENER 4.3V 200MW SOD323
Tolerance: ±3.02%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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AZ1117CR-1.2TRG1 AZ1117CR-1.2TRG1 Diodes Incorporated AZ1117C.pdf Description: IC REG LINEAR 1.2V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 70dB (120Hz)
Protection Features: Thermal Shutdown
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AZ1117CR-1.2TRG1 AZ1117CR-1.2TRG1 Diodes Incorporated AZ1117C.pdf Description: IC REG LINEAR 1.2V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 70dB (120Hz)
Protection Features: Thermal Shutdown
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FL1200023 FL1200023 Diodes Incorporated FL.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
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PI6CG338Q2ZLWEX PI6CG338Q2ZLWEX Diodes Incorporated PI6CG338Q.pdf Description: CLOCK GENERATOR V-QFN6060-48 T&R
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:8
Differential - Input:Output: No/Yes
Supplier Device Package: 48-VQFN (6x6)
PLL: Yes
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PI6CG338Q2ZLWEX PI6CG338Q2ZLWEX Diodes Incorporated PI6CG338Q.pdf Description: CLOCK GENERATOR V-QFN6060-48 T&R
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:8
Differential - Input:Output: No/Yes
Supplier Device Package: 48-VQFN (6x6)
PLL: Yes
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
auf Bestellung 2937 Stücke:
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500+7.18 EUR
1000+7.01 EUR
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SDT2L40CP3-7B SDT2L40CP3-7B Diodes Incorporated SDT2L40CP3.pdf Description: DIODE SCHOTT 40V 2A X3-DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-DSN1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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SDT4U40CP3-7B SDT4U40CP3-7B Diodes Incorporated SDT4U40CP3.pdf Description: DIODE SCHOTT 40V 4A X3-DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: X3-DSN1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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SBR0240LPWQ-7B SBR0240LPWQ-7B Diodes Incorporated SBR0240LPWQ.pdf Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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50000+0.07 EUR
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SBR0240LPWQ-7B SBR0240LPWQ-7B Diodes Incorporated SBR0240LPWQ.pdf Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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100+0.2 EUR
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2000+0.12 EUR
5000+0.1 EUR
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BZT52C20TQ-7-F BZT52C20TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 20V 300MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C20TQ-7-F BZT52C20TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 20V 300MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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SMBJ17A-13-F SMBJ17A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 17V 27.6V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
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DDTA144TCA-7-F DDTA144TCA-7-F Diodes Incorporated ds30326.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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DDTA144TCA-7-F DDTA144TCA-7-F Diodes Incorporated ds30326.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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DPS1133FIAQ-13 DPS1133FIAQ-13 Diodes Incorporated DPS1133FIAQ.pdf Description: PD SWITCH V-QFN4040-17 T&R 4K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 17-VFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 0V ~ 24V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 24V
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: V-QFN4040-17
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
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FY1800001Q FY1800001Q Diodes Incorporated FY.pdf Description: CRYSTAL 18.0800MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 18.08 MHz
Produkt ist nicht verfügbar
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74AUP1G17FZ4-7 74AUP1G17FZ4-7 Diodes Incorporated 74AUP1G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
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74AUP1G17FZ4-7 74AUP1G17FZ4-7 Diodes Incorporated 74AUP1G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
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500+0.44 EUR
1000+0.4 EUR
2500+0.36 EUR
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SBR10200CTFP-JT SBR10200CTFP-JT Diodes Incorporated Description: DIODE ARR SBR 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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BAT54CDW-7-F-2477 BAT54CDW-7-F-2477 Diodes Incorporated Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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FS1ME_HF-07 FS1ME_HF-07 Diodes Incorporated Description: DIODE STANDARD 1000V 1A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 µs
Technology: Standard
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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7500+0.056 EUR
12500+0.051 EUR
17500+0.049 EUR
25000+0.047 EUR
62500+0.042 EUR
125000+0.038 EUR
250000+0.036 EUR
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RDBF254-13 RDBF254-13 Diodes Incorporated Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RDBF254-13 RDBF254-13 Diodes Incorporated Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BZT52HC2V4WF-7 BZT52HC2V4WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V4WF-7 BZT52HC2V4WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V7WF-7 BZT52HC2V7WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC2V7WF-7 BZT52HC2V7WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52HC33WF-7 BZT52HC33WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
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BZT52HC33WF-7 BZT52HC33WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
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BZT52HC39WF-7 BZT52HC39WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
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BZT52HC39WF-7 BZT52HC39WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 59777 Stücke:
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SMBJ5.0CAQ-13-F SMBJ5.0CAQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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500+0.31 EUR
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AP63201QWU-EVM AP63201QWU-EVM Diodes Incorporated AP63201QWU-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP63201Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63201Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
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AP63200QWU-EVM Diodes Incorporated AP63200QWU-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP63200Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63200Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
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AP63203QWU-EVM AP63203QWU-EVM Diodes Incorporated AP63203QWU-EVM-User-Guide.pdf Description: EVAL BOARD FOR AP63203Q
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 1.1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63203Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
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DMTH46M7SFVW-7 DMTH46M7SFVW-7 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
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DMTH46M7SFVW-7 DMTH46M7SFVW-7 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
auf Bestellung 304 Stücke:
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DMTH4008LPSQ-13 DMTH4008LPSQ-13 Diodes Incorporated DMTH4008LPSQ.pdf Description: MOSFET N-CH 40V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
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DMTH4008LPSQ-13 DMTH4008LPSQ-13 Diodes Incorporated DMTH4008LPSQ.pdf Description: MOSFET N-CH 40V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4815 Stücke:
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100+0.79 EUR
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DMTH4008LPDWQ-13 DMTH4008LPDWQ-13 Diodes Incorporated DMTH4008LPDWQ.pdf Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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2500+0.46 EUR
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DMTH4008LPDWQ-13 DMTH4008LPDWQ-13 Diodes Incorporated DMTH4008LPDWQ.pdf Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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SB550-T SB550-T Diodes Incorporated ds23024.pdf Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SB550-T SB550-T Diodes Incorporated ds23024.pdf Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 20192 Stücke:
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DMC2710UVQ-7 DMC2710UVQ-7 Diodes Incorporated DMC2710UVQ.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UVQ-7 DMC2710UVQ-7 Diodes Incorporated DMC2710UVQ.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 535 Stücke:
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29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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DMC2710UDW-13 DMC2710UDW-13 Diodes Incorporated DMC2710UDW.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 150000 Stücke:
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10000+0.099 EUR
20000+0.09 EUR
30000+0.086 EUR
50000+0.081 EUR
70000+0.078 EUR
100000+0.075 EUR
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DMC2710UDWQ-13 DMC2710UDWQ-13 Diodes Incorporated DMC2710UDWQ.pdf Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMC2710UVQ-13 DMC2710UVQ-13 Diodes Incorporated DMC2710UVQ.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC2710UV-13 DMC2710UV-13 Diodes Incorporated DMC2710UV.pdf Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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DMC2710UVT-13 DMC2710UVT-13 Diodes Incorporated DMC2710UVT.pdf Description: MOSFET N/P-CH 20V 1.2A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
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BAT64W-7-F BAT64W-7-F Diodes Incorporated BAT64W-AW-CW-SW.pdf Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64W-7-F BAT64W-7-F Diodes Incorporated BAT64W-AW-CW-SW.pdf Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64-7-F BAT64-7-F Diodes Incorporated BAT64-A-C-S.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64-7-F BAT64-7-F Diodes Incorporated BAT64-A-C-S.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64Q-13-F BAT64Q-13-F Diodes Incorporated DS45354.pdf Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64SQ-13-F BAT64SQ-13-F Diodes Incorporated DS45354.pdf Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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AP431SHBRTR-G1 AP431S.pdf
AP431SHBRTR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% SOT89-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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D3Z4V3BF-7 D3ZxVxBF.pdf
D3Z4V3BF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.33V 400MW SOD323F
Tolerance: ±4%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.33 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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D3Z4V3BF-7 D3ZxVxBF.pdf
D3Z4V3BF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.33V 400MW SOD323F
Tolerance: ±4%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.33 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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UDZ4V3B-7 ds30290.pdf
UDZ4V3B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V 200MW SOD323
Tolerance: ±3.02%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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3000+0.064 EUR
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AZ1117CR-1.2TRG1 AZ1117C.pdf
AZ1117CR-1.2TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.2V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 70dB (120Hz)
Protection Features: Thermal Shutdown
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1000+0.2 EUR
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AZ1117CR-1.2TRG1 AZ1117C.pdf
AZ1117CR-1.2TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.2V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 70dB (120Hz)
Protection Features: Thermal Shutdown
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FL1200023 FL.pdf
FL1200023
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
Produkt ist nicht verfügbar
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PI6CG338Q2ZLWEX PI6CG338Q.pdf
PI6CG338Q2ZLWEX
Hersteller: Diodes Incorporated
Description: CLOCK GENERATOR V-QFN6060-48 T&R
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:8
Differential - Input:Output: No/Yes
Supplier Device Package: 48-VQFN (6x6)
PLL: Yes
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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PI6CG338Q2ZLWEX PI6CG338Q.pdf
PI6CG338Q2ZLWEX
Hersteller: Diodes Incorporated
Description: CLOCK GENERATOR V-QFN6060-48 T&R
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:8
Differential - Input:Output: No/Yes
Supplier Device Package: 48-VQFN (6x6)
PLL: Yes
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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SDT2L40CP3-7B SDT2L40CP3.pdf
SDT2L40CP3-7B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 40V 2A X3-DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-DSN1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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SDT4U40CP3-7B SDT4U40CP3.pdf
SDT4U40CP3-7B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 40V 4A X3-DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: X3-DSN1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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SBR0240LPWQ-7B SBR0240LPWQ.pdf
SBR0240LPWQ-7B
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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10000+0.078 EUR
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SBR0240LPWQ-7B SBR0240LPWQ.pdf
SBR0240LPWQ-7B
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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50+0.35 EUR
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BZT52C20TQ-7-F ds30502.pdf
BZT52C20TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 300MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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BZT52C20TQ-7-F ds30502.pdf
BZT52C20TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 300MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 2999 Stücke:
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Anzahl Preis
63+0.28 EUR
112+0.16 EUR
237+0.074 EUR
1000+0.073 EUR
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SMBJ17A-13-F ds19002.pdf
SMBJ17A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17V 27.6V SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 27093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 35
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DDTA144TCA-7-F ds30326.pdf
DDTA144TCA-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.072 EUR
6000+0.065 EUR
9000+0.061 EUR
15000+0.057 EUR
21000+0.054 EUR
30000+0.052 EUR
75000+0.046 EUR
Mindestbestellmenge: 3000
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DDTA144TCA-7-F ds30326.pdf
DDTA144TCA-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
auf Bestellung 130990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 50
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DPS1133FIAQ-13 DPS1133FIAQ.pdf
DPS1133FIAQ-13
Hersteller: Diodes Incorporated
Description: PD SWITCH V-QFN4040-17 T&R 4K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 17-VFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 0V ~ 24V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 24V
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: V-QFN4040-17
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
13+1.46 EUR
25+1.32 EUR
100+1.17 EUR
250+1.1 EUR
500+1.05 EUR
1000+1.02 EUR
Mindestbestellmenge: 9
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FY1800001Q FY.pdf
FY1800001Q
Hersteller: Diodes Incorporated
Description: CRYSTAL 18.0800MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.043" (1.10mm)
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 18.08 MHz
Produkt ist nicht verfügbar
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74AUP1G17FZ4-7 74AUP1G17.pdf
74AUP1G17FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.26 EUR
Mindestbestellmenge: 5000
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74AUP1G17FZ4-7 74AUP1G17.pdf
74AUP1G17FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
auf Bestellung 99850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
21+0.87 EUR
25+0.73 EUR
100+0.57 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.4 EUR
2500+0.36 EUR
Mindestbestellmenge: 13
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SBR10200CTFP-JT
SBR10200CTFP-JT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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BAT54CDW-7-F-2477
BAT54CDW-7-F-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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FS1ME_HF-07
FS1ME_HF-07
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.6 µs
Technology: Standard
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 680000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.066 EUR
5000+0.059 EUR
7500+0.056 EUR
12500+0.051 EUR
17500+0.049 EUR
25000+0.047 EUR
62500+0.042 EUR
125000+0.038 EUR
250000+0.036 EUR
Mindestbestellmenge: 2500
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RDBF254-13
RDBF254-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RDBF254-13
RDBF254-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECTIFIER DBF T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BZT52HC2V4WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V4WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 354000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.044 EUR
9000+0.039 EUR
Mindestbestellmenge: 3000
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BZT52HC2V4WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V4WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 375MW SOD123F
Tolerance: ±8.33%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 354000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
84+0.21 EUR
213+0.083 EUR
500+0.078 EUR
1000+0.073 EUR
Mindestbestellmenge: 50
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BZT52HC2V7WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V7WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 357000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.062 EUR
9000+0.059 EUR
15000+0.054 EUR
21000+0.052 EUR
30000+0.049 EUR
75000+0.044 EUR
150000+0.041 EUR
300000+0.039 EUR
Mindestbestellmenge: 3000
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BZT52HC2V7WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC2V7WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 375MW SOD123F
Tolerance: ±7.41%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 359990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
84+0.21 EUR
135+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
Mindestbestellmenge: 53
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BZT52HC33WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC33WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52HC33WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC33WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 375MW SOD123F
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
112+0.16 EUR
231+0.076 EUR
500+0.075 EUR
1000+0.073 EUR
Mindestbestellmenge: 77
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BZT52HC39WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC39WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.042 EUR
6000+0.04 EUR
9000+0.039 EUR
Mindestbestellmenge: 3000
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BZT52HC39WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC39WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 375MW SOD123F
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 59777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
112+0.16 EUR
236+0.075 EUR
500+0.074 EUR
1000+0.073 EUR
Mindestbestellmenge: 77
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SMBJ5.0CAQ-13-F ds40740.pdf
SMBJ5.0CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
28+0.63 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 18
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AP63201QWU-EVM AP63201QWU-EVM-User-Guide.pdf
AP63201QWU-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP63201Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63201Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AP63200QWU-EVM AP63200QWU-EVM-User-Guide.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP63200Q
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63200Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AP63203QWU-EVM AP63203QWU-EVM-User-Guide.pdf
AP63203QWU-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP63203Q
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.8V ~ 32V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 1.1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP63203Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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DMTH46M7SFVW-7 DMTH46M7SFVW.pdf
DMTH46M7SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Produkt ist nicht verfügbar
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DMTH46M7SFVW-7 DMTH46M7SFVW.pdf
DMTH46M7SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
Mindestbestellmenge: 10
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DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
DMTH4008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
Mindestbestellmenge: 2500
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DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
DMTH4008LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
15+1.18 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 11
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DMTH4008LPDWQ-13 DMTH4008LPDWQ.pdf
DMTH4008LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
Mindestbestellmenge: 2500
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DMTH4008LPDWQ-13 DMTH4008LPDWQ.pdf
DMTH4008LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.15 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
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SB550-T ds23024.pdf
SB550-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1200+0.41 EUR
2400+0.4 EUR
6000+0.39 EUR
8400+0.36 EUR
12000+0.35 EUR
Mindestbestellmenge: 1200
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SB550-T ds23024.pdf
SB550-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 20192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
21+0.85 EUR
100+0.69 EUR
500+0.53 EUR
Mindestbestellmenge: 14
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DMC2710UVQ-7 DMC2710UVQ.pdf
DMC2710UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC2710UVQ-7 DMC2710UVQ.pdf
DMC2710UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 535 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
Mindestbestellmenge: 29
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DMC2710UDW-13 DMC2710UDW.pdf
DMC2710UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.099 EUR
20000+0.09 EUR
30000+0.086 EUR
50000+0.081 EUR
70000+0.078 EUR
100000+0.075 EUR
Mindestbestellmenge: 10000
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DMC2710UDWQ-13 DMC2710UDWQ.pdf
DMC2710UDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.099 EUR
20000+0.09 EUR
30000+0.086 EUR
50000+0.081 EUR
70000+0.078 EUR
100000+0.075 EUR
Mindestbestellmenge: 10000
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DMC2710UVQ-13 DMC2710UVQ.pdf
DMC2710UVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC2710UV-13 DMC2710UV.pdf
DMC2710UV-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 460mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
Mindestbestellmenge: 10000
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DMC2710UVT-13 DMC2710UVT.pdf
DMC2710UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.2A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
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BAT64W-7-F BAT64W-AW-CW-SW.pdf
BAT64W-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.046 EUR
9000+0.04 EUR
15000+0.038 EUR
30000+0.035 EUR
75000+0.033 EUR
Mindestbestellmenge: 3000
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BAT64W-7-F BAT64W-AW-CW-SW.pdf
BAT64W-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 146510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
134+0.13 EUR
202+0.087 EUR
500+0.071 EUR
1000+0.067 EUR
Mindestbestellmenge: 91
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BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.055 EUR
9000+0.051 EUR
15000+0.049 EUR
Mindestbestellmenge: 3000
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BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 26952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
94+0.19 EUR
149+0.12 EUR
500+0.1 EUR
1000+0.094 EUR
Mindestbestellmenge: 67
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BAT64Q-13-F DS45354.pdf
BAT64Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 540000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
20000+0.1 EUR
30000+0.099 EUR
50000+0.093 EUR
70000+0.09 EUR
100000+0.086 EUR
Mindestbestellmenge: 10000
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BAT64SQ-13-F DS45354.pdf
BAT64SQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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