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AP7365-10EG-13 AP7365-10EG-13 Diodes Incorporated AP7365.pdf Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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1000+0.29 EUR
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ZHB6792TA ZHB6792TA Diodes Incorporated ZHB6792.pdf Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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ZHB6792TA ZHB6792TA Diodes Incorporated ZHB6792.pdf Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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DMT32M5LPS-13 DMT32M5LPS-13 Diodes Incorporated DMT32M5LPS.pdf Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
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DMT32M5LPS-13 DMT32M5LPS-13 Diodes Incorporated DMT32M5LPS.pdf Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
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DMT32M5LFG-13 DMT32M5LFG-13 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-13 DMT32M5LFG-13 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-7 DMT32M5LFG-7 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-7 DMT32M5LFG-7 Diodes Incorporated DMT32M5LFG.pdf Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M4LFG-7 DMT32M4LFG-7 Diodes Incorporated DMT32M4LFG.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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DMT32M4LFG-13 DMT32M4LFG-13 Diodes Incorporated DMT32M4LFG.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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PI3EQX5801ZDEX PI3EQX5801ZDEX Diodes Incorporated PI3EQX5801-PB.pdf Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI3EQX5801ZDEX PI3EQX5801ZDEX Diodes Incorporated PI3EQX5801-PB.pdf Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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ZVN3310ASTZ ZVN3310ASTZ Diodes Incorporated ZVN3310A.pdf Description: MOSFET N-CH 100V 200MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Produkt ist nicht verfügbar
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GBU25JL_HF Diodes Incorporated GBU25JL_LS.pdf Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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AH1887-ZG-7 AH1887-ZG-7 Diodes Incorporated AH1887.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
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AH1887-ZG-7 AH1887-ZG-7 Diodes Incorporated AH1887.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
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AP9101CAK6-BBTRG1 AP9101CAK6-BBTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Fault Protection: Over Current, Over Voltage
Supplier Device Package: SOT-26
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP9101CAK6-BDTRG1 AP9101CAK6-BDTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Fault Protection: Over Current, Over Voltage
Supplier Device Package: SOT-26
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC2G32RA3-7 74LVC2G32RA3-7 Diodes Incorporated 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
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74LVC2G32RA3-7 74LVC2G32RA3-7 Diodes Incorporated 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
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AH277AZ4-BG1 AH277AZ4-BG1 Diodes Incorporated AH277A.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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AH277AZ4-AG1 AH277AZ4-AG1 Diodes Incorporated AH277A.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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DMN32D0LV-7 DMN32D0LV-7 Diodes Incorporated DMN32D0LV.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
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DMN32D0LV-7 DMN32D0LV-7 Diodes Incorporated DMN32D0LV.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
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MBR2150VG-E1 MBR2150VG-E1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VG-G1 MBR2150VG-G1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VGTR-G1 MBR2150VGTR-G1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBR2150VRTR-E1 MBR2150VRTR-E1 Diodes Incorporated MBR2150.pdf Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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B340LB-13-F-2477 B340LB-13-F-2477 Diodes Incorporated Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA-7B Diodes Incorporated DMN31D5UDA.pdf Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA-7B Diodes Incorporated DMN31D5UDA.pdf Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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74AUP1G32FS3-7 74AUP1G32FS3-7 Diodes Incorporated 74AUP1G32.pdf Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G32FS3-7 74AUP1G32FS3-7 Diodes Incorporated 74AUP1G32.pdf Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G02FS3-7 74AUP1G02FS3-7 Diodes Incorporated 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G02FS3-7 74AUP1G02FS3-7 Diodes Incorporated 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G06FS3-7 74AUP1G06FS3-7 Diodes Incorporated 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G06FS3-7 74AUP1G06FS3-7 Diodes Incorporated 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G09FS3-7 74AUP1G09FS3-7 Diodes Incorporated 74AUP1G09.pdf Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G09FS3-7 74AUP1G09FS3-7 Diodes Incorporated 74AUP1G09.pdf Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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BC847BFAQ-7B BC847BFAQ-7B Diodes Incorporated BC847BFAQ.pdf Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
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BC847BFAQ-7B BC847BFAQ-7B Diodes Incorporated BC847BFAQ.pdf Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
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DMC31D5UDA-7B DMC31D5UDA-7B Diodes Incorporated DMC31D5UDA.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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DMC31D5UDA-7B DMC31D5UDA-7B Diodes Incorporated DMC31D5UDA.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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DMP22D5UFA-7B DMP22D5UFA-7B Diodes Incorporated DMP22D5UFA.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2991UFA-7B DMN2991UFA-7B Diodes Incorporated DMN2991UFA.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Produkt ist nicht verfügbar
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DMP32D9UFA-7B DMP32D9UFA-7B Diodes Incorporated DMP32D9UFA.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Produkt ist nicht verfügbar
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DMN31D5UFA-7B DMN31D5UFA-7B Diodes Incorporated DMN31D5UFA.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
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DMP32D9UDAQ-7B DMP32D9UDAQ-7B Diodes Incorporated DMP32D9UDAQ.pdf Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
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DMC31D5UDAQ-7B DMC31D5UDAQ-7B Diodes Incorporated DMC31D5UDAQ.pdf Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBPC1510 GBPC1510 Diodes Incorporated ds21208.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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74LVC3G07V8-7 74LVC3G07V8-7 Diodes Incorporated 74LVC3G07.pdf Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
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74LVC3G07V8-7 74LVC3G07V8-7 Diodes Incorporated 74LVC3G07.pdf Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
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DMS2220LFDB-7 DMS2220LFDB-7 Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
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DMS2220LFDB-7 DMS2220LFDB-7 Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
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DMS2220LFDB-7 DMS2220LFDB-7 Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
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49SNC200-18-E Diodes Incorporated Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 20 MHz
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DESD3V3ZS1BLP3-7 DESD3V3ZS1BLP3-7 Diodes Incorporated DESD3V3ZS1BLP3.pdf Description: TVS DIODE 3.3VWM 4.5V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power Line Protection: No
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DESD3V3XA1BCSF-7 DESD3V3XA1BCSF-7 Diodes Incorporated DESD3V3XA1BCSF.pdf Description: TVS DIODE 3.3VWM 7V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7V (Typ)
Power - Peak Pulse: 27.5W
Power Line Protection: No
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DESD3V3X1BCSF-7 DESD3V3X1BCSF-7 Diodes Incorporated DESD3V3X1BCSF.pdf Description: TVS DIODE 3.3VWM 5.2V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 5.2V
Power - Peak Pulse: 21W
Power Line Protection: No
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AP7365-10EG-13 AP7365.pdf
AP7365-10EG-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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ZHB6792TA ZHB6792.pdf
ZHB6792TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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ZHB6792TA ZHB6792.pdf
ZHB6792TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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DMT32M5LPS-13 DMT32M5LPS.pdf
DMT32M5LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
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DMT32M5LPS-13 DMT32M5LPS.pdf
DMT32M5LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
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DMT32M5LFG-13 DMT32M5LFG.pdf
DMT32M5LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-13 DMT32M5LFG.pdf
DMT32M5LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-7 DMT32M5LFG.pdf
DMT32M5LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M5LFG-7 DMT32M5LFG.pdf
DMT32M5LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
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DMT32M4LFG-7 DMT32M4LFG.pdf
DMT32M4LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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DMT32M4LFG-13 DMT32M4LFG.pdf
DMT32M4LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
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PI3EQX5801ZDEX PI3EQX5801-PB.pdf
PI3EQX5801ZDEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI3EQX5801ZDEX PI3EQX5801-PB.pdf
PI3EQX5801ZDEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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ZVN3310ASTZ ZVN3310A.pdf
ZVN3310ASTZ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 200MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Produkt ist nicht verfügbar
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GBU25JL_HF GBU25JL_LS.pdf
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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AH1887-ZG-7 AH1887.pdf
AH1887-ZG-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
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AH1887-ZG-7 AH1887.pdf
AH1887-ZG-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
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AP9101CAK6-BBTRG1
AP9101CAK6-BBTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Fault Protection: Over Current, Over Voltage
Supplier Device Package: SOT-26
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP9101CAK6-BDTRG1
AP9101CAK6-BDTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Fault Protection: Over Current, Over Voltage
Supplier Device Package: SOT-26
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC2G32RA3-7 74LVC2G32.pdf
74LVC2G32RA3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
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5000+0.09 EUR
10000+0.088 EUR
15000+0.087 EUR
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74LVC2G32RA3-7 74LVC2G32.pdf
74LVC2G32RA3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
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84+0.25 EUR
129+0.17 EUR
146+0.14 EUR
172+0.12 EUR
250+0.11 EUR
500+0.1 EUR
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AH277AZ4-BG1 AH277A.pdf
AH277AZ4-BG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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AH277AZ4-AG1 AH277A.pdf
AH277AZ4-AG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Produkt ist nicht verfügbar
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DMN32D0LV-7 DMN32D0LV.pdf
DMN32D0LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
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DMN32D0LV-7 DMN32D0LV.pdf
DMN32D0LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15946 Stücke:
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67+0.31 EUR
94+0.23 EUR
140+0.15 EUR
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MBR2150VG-E1 MBR2150.pdf
MBR2150VG-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VG-G1 MBR2150.pdf
MBR2150VG-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VGTR-G1 MBR2150.pdf
MBR2150VGTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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MBR2150VRTR-E1 MBR2150.pdf
MBR2150VRTR-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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B340LB-13-F-2477
B340LB-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA.pdf
DMN31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Produkt ist nicht verfügbar
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DMN31D5UDA-7B DMN31D5UDA.pdf
DMN31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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46+0.46 EUR
68+0.31 EUR
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1000+0.088 EUR
2000+0.076 EUR
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74AUP1G32FS3-7 74AUP1G32.pdf
74AUP1G32FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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5000+0.19 EUR
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74AUP1G32FS3-7 74AUP1G32.pdf
74AUP1G32FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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30+0.71 EUR
37+0.58 EUR
40+0.52 EUR
100+0.39 EUR
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500+0.3 EUR
1000+0.23 EUR
2500+0.2 EUR
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74AUP1G02FS3-7 74AUP1G02.pdf
74AUP1G02FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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5000+0.19 EUR
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74AUP1G02FS3-7 74AUP1G02.pdf
74AUP1G02FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 20000 Stücke:
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AnzahlPrivatkunde
30+0.71 EUR
37+0.58 EUR
40+0.52 EUR
100+0.39 EUR
250+0.36 EUR
500+0.3 EUR
1000+0.23 EUR
2500+0.2 EUR
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74AUP1G06FS3-7 74AUP1G06.pdf
74AUP1G06FS3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 515000 Stücke:
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AnzahlPrivatkunde
5000+0.21 EUR
10000+0.19 EUR
25000+0.18 EUR
35000+0.17 EUR
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74AUP1G06FS3-7 74AUP1G06.pdf
74AUP1G06FS3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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19+1.15 EUR
31+0.68 EUR
38+0.56 EUR
100+0.42 EUR
250+0.36 EUR
500+0.31 EUR
1000+0.27 EUR
2500+0.24 EUR
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74AUP1G09FS3-7 74AUP1G09.pdf
74AUP1G09FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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5000+0.13 EUR
50000+0.12 EUR
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74AUP1G09FS3-7 74AUP1G09.pdf
74AUP1G09FS3-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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59+0.36 EUR
88+0.24 EUR
100+0.21 EUR
117+0.18 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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BC847BFAQ-7B BC847BFAQ.pdf
BC847BFAQ-7B
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
auf Bestellung 230000 Stücke:
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10000+0.13 EUR
30000+0.12 EUR
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BC847BFAQ-7B BC847BFAQ.pdf
BC847BFAQ-7B
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
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28+0.75 EUR
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55+0.38 EUR
63+0.33 EUR
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DMC31D5UDA-7B DMC31D5UDA.pdf
DMC31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 4070000 Stücke:
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10000+0.15 EUR
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DMC31D5UDA-7B DMC31D5UDA.pdf
DMC31D5UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
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28+0.77 EUR
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DMP22D5UFA-7B DMP22D5UFA.pdf
DMP22D5UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2991UFA-7B DMN2991UFA.pdf
DMN2991UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Produkt ist nicht verfügbar
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DMP32D9UFA-7B DMP32D9UFA.pdf
DMP32D9UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Produkt ist nicht verfügbar
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DMN31D5UFA-7B DMN31D5UFA.pdf
DMN31D5UFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Produkt ist nicht verfügbar
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DMP32D9UDAQ-7B DMP32D9UDAQ.pdf
DMP32D9UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 219720 Stücke:
Lieferzeit 10-14 Tag (e)
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40+0.52 EUR
65+0.32 EUR
79+0.26 EUR
91+0.23 EUR
105+0.2 EUR
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DMC31D5UDAQ-7B DMC31D5UDAQ.pdf
DMC31D5UDAQ-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBPC1510 ds21208.pdf
GBPC1510
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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74LVC3G07V8-7 74LVC3G07.pdf
74LVC3G07V8-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
auf Bestellung 594000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.23 EUR
6000+0.21 EUR
75000+0.2 EUR
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74LVC3G07V8-7 74LVC3G07.pdf
74LVC3G07V8-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
auf Bestellung 596290 Stücke:
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39+0.55 EUR
56+0.38 EUR
63+0.33 EUR
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DMS2220LFDB-7 ds31546.pdf
DMS2220LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 87000 Stücke:
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3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
15000+0.26 EUR
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DMS2220LFDB-7 ds31546.pdf
DMS2220LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89997 Stücke:
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20+1.07 EUR
29+0.73 EUR
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DMS2220LFDB-7 ds31546.pdf
DMS2220LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89297 Stücke:
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20+1.07 EUR
30+0.71 EUR
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49SNC200-18-E
Hersteller: Diodes Incorporated
Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 20 MHz
Produkt ist nicht verfügbar
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DESD3V3ZS1BLP3-7 DESD3V3ZS1BLP3.pdf
DESD3V3ZS1BLP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 4.5V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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DESD3V3XA1BCSF-7 DESD3V3XA1BCSF.pdf
DESD3V3XA1BCSF-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7V (Typ)
Power - Peak Pulse: 27.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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DESD3V3X1BCSF-7 DESD3V3X1BCSF.pdf
DESD3V3X1BCSF-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 5.2V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 5.2V
Power - Peak Pulse: 21W
Power Line Protection: No
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